DE3274470D1 - Multiple chamber deposition and isolation system and method - Google Patents

Multiple chamber deposition and isolation system and method

Info

Publication number
DE3274470D1
DE3274470D1 DE8282108699T DE3274470T DE3274470D1 DE 3274470 D1 DE3274470 D1 DE 3274470D1 DE 8282108699 T DE8282108699 T DE 8282108699T DE 3274470 T DE3274470 T DE 3274470T DE 3274470 D1 DE3274470 D1 DE 3274470D1
Authority
DE
Germany
Prior art keywords
layers
chambers
chamber
deposition
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE8282108699T
Other languages
English (en)
Inventor
Vincent D Canella
Masatsugu Izu
Stephen J Hudgens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE3274470(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of DE3274470D1 publication Critical patent/DE3274470D1/de
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping
DE8282108699T 1981-09-28 1982-09-21 Multiple chamber deposition and isolation system and method Expired DE3274470D1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (1)

Publication Number Publication Date
DE3274470D1 true DE3274470D1 (en) 1987-01-15

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8282108699T Expired DE3274470D1 (en) 1981-09-28 1982-09-21 Multiple chamber deposition and isolation system and method

Country Status (16)

Country Link
US (1) US4438723A (de)
EP (1) EP0076426B1 (de)
JP (1) JPS5870524A (de)
KR (1) KR900007042B1 (de)
AT (1) ATE23883T1 (de)
AU (1) AU552270B2 (de)
BR (1) BR8205600A (de)
CA (1) CA1186280A (de)
DE (1) DE3274470D1 (de)
ES (2) ES516034A0 (de)
IE (1) IE53843B1 (de)
IL (1) IL66784A (de)
IN (1) IN157462B (de)
PH (1) PH18998A (de)
PT (1) PT75612B (de)
ZA (1) ZA826615B (de)

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US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
TW237562B (de) 1990-11-09 1995-01-01 Semiconductor Energy Res Co Ltd
JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
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US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
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DE4324320B4 (de) * 1992-07-24 2006-08-31 Fuji Electric Co., Ltd., Kawasaki Verfahren und Vorrichtung zur Herstellung einer als dünne Schicht ausgebildeten fotovoltaischen Umwandlungsvorrichtung
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Also Published As

Publication number Publication date
EP0076426A3 (en) 1984-07-25
IN157462B (de) 1986-04-05
JPS5870524A (ja) 1983-04-27
BR8205600A (pt) 1983-08-30
ZA826615B (en) 1983-08-31
JPH0338731B2 (de) 1991-06-11
AU8813682A (en) 1983-04-14
PT75612B (en) 1984-10-29
CA1186280A (en) 1985-04-30
ES8400635A1 (es) 1983-10-16
KR900007042B1 (ko) 1990-09-27
PH18998A (en) 1985-12-03
ES516034A0 (es) 1983-10-16
EP0076426B1 (de) 1986-11-26
ATE23883T1 (de) 1986-12-15
IE53843B1 (en) 1989-03-15
IL66784A (en) 1985-09-29
IE822164L (en) 1983-03-28
PT75612A (en) 1982-10-01
AU552270B2 (en) 1986-05-29
US4438723A (en) 1984-03-27
ES522825A0 (es) 1984-09-16
IL66784A0 (en) 1982-12-31
EP0076426A2 (de) 1983-04-13
ES8407626A1 (es) 1984-09-16

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8365 Fully valid after opposition proceedings