ES8400635A1 - Sistema para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato. - Google Patents

Sistema para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato.

Info

Publication number
ES8400635A1
ES8400635A1 ES516034A ES516034A ES8400635A1 ES 8400635 A1 ES8400635 A1 ES 8400635A1 ES 516034 A ES516034 A ES 516034A ES 516034 A ES516034 A ES 516034A ES 8400635 A1 ES8400635 A1 ES 8400635A1
Authority
ES
Spain
Prior art keywords
layers
chambers
chamber
deposition
conductivity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES516034A
Other languages
English (en)
Other versions
ES516034A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Energy Conversion Devices Inc
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ES8400635(A1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Publication of ES8400635A1 publication Critical patent/ES8400635A1/es
Publication of ES516034A0 publication Critical patent/ES516034A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemically Coating (AREA)

Abstract

SISTEMA PARA LA DEPOSICION DE UN CUERPO DE MATERIAL DE SILICIO AMORFO EN CAPAS MULTIPLES SOBRE UN SUSTRATO. COMPRENDE UNA PRIMERA CAMARA QUE INCLUYE UN DISPOSITIVO PARA DEPOSITAR SOBRE EL SUSTRATO UNA PRIMERA CAPA DE MATERIAL, UNA SEGUNDA CAMARA QUE INCLUYE UN DISPOSITIVO PARA DEPOSITAR SOBRE DICHO SUSTRATO UNA SEGUNDA CAPA DE MATERIAL QUE TIENE UNA COMPOSICION, QUE DIFIERE DE LA COMPOSICION DE LA PRIMERA CAPA POR LA AUSENCIA DE AL MENOS UN ELEMENTO, UN DISPOSITIVO PARA TRANSFERIR EL SUSTRATO DESDE LA PRIMERA CAMARA A LA SEGUNDA, UN DISPOSITIVO DE FUENTE PARA SUMINISTRARA LA SEGUNDA CAMARA AL MENOS UN GAS Y UN DISPOSITIVO DE AISLAMIENTO DE LA SEGUNDA CAMARA RESPECTO AL ELEMENTO AL MENOS EN EL INTERIOR DE LA PRIMERA CAMARA, QUE INCLUYE UN DISPOSITIVO PARA ESTABLECER UNA CIRCULACION UNIDIRECCIONAL DEL GAS AL MENOS A PARTIR DE LA SEGUNDA CAMARA HASTA LA PRIMERA CAMARA.SE UTILIZA PARA LA PRODUCCION DE CELULAS FOTOVOLTAICAS.
ES516034A 1981-09-28 1982-09-28 Sistema para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato. Granted ES516034A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method

Publications (2)

Publication Number Publication Date
ES8400635A1 true ES8400635A1 (es) 1983-10-16
ES516034A0 ES516034A0 (es) 1983-10-16

Family

ID=23184044

Family Applications (2)

Application Number Title Priority Date Filing Date
ES516034A Granted ES516034A0 (es) 1981-09-28 1982-09-28 Sistema para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato.
ES522825A Expired ES8407626A1 (es) 1981-09-28 1983-05-30 "metodo para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato" divisional de la patente de invencion n 516.034n0 solicitada en:28 de septiembre de 1982

Family Applications After (1)

Application Number Title Priority Date Filing Date
ES522825A Expired ES8407626A1 (es) 1981-09-28 1983-05-30 "metodo para la deposicion de un cuerpo de material de silicio amorfo en capas multiples sobre un sustrato" divisional de la patente de invencion n 516.034n0 solicitada en:28 de septiembre de 1982

Country Status (16)

Country Link
US (1) US4438723A (es)
EP (1) EP0076426B1 (es)
JP (1) JPS5870524A (es)
KR (1) KR900007042B1 (es)
AT (1) ATE23883T1 (es)
AU (1) AU552270B2 (es)
BR (1) BR8205600A (es)
CA (1) CA1186280A (es)
DE (1) DE3274470D1 (es)
ES (2) ES516034A0 (es)
IE (1) IE53843B1 (es)
IL (1) IL66784A (es)
IN (1) IN157462B (es)
PH (1) PH18998A (es)
PT (1) PT75612B (es)
ZA (1) ZA826615B (es)

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US4485125A (en) * 1982-03-19 1984-11-27 Energy Conversion Devices, Inc. Method for continuously producing tandem amorphous photovoltaic cells
US4515107A (en) * 1982-11-12 1985-05-07 Sovonics Solar Systems Apparatus for the manufacture of photovoltaic devices
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EP0150798B1 (en) 1984-01-23 1989-05-31 Energy Conversion Devices, Inc. Liquid crystal displays operated by amorphous silicon alloy diodes
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US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
AU584607B2 (en) * 1984-02-17 1989-06-01 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Film forming method and apparatus
US4514437A (en) * 1984-05-02 1985-04-30 Energy Conversion Devices, Inc. Apparatus for plasma assisted evaporation of thin films and corresponding method of deposition
DE3427057A1 (de) * 1984-07-23 1986-01-23 Standard Elektrik Lorenz Ag, 7000 Stuttgart Anlage zum herstellen von halbleiter-schichtstrukturen durch epitaktisches wachstum
US4749588A (en) * 1984-09-07 1988-06-07 Nobuhiro Fukuda Process for producing hydrogenated amorphous silicon thin film and a solar cell
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JPH0697649B2 (ja) * 1984-11-27 1994-11-30 松下電器産業株式会社 非晶質膜半導体の製造法
US4697041A (en) * 1985-02-15 1987-09-29 Teijin Limited Integrated solar cells
EP0210578B1 (en) * 1985-07-29 1992-05-20 Energy Conversion Devices, Inc. System and method for depositing an electrical insulator in a continuous process
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US4803947A (en) * 1986-01-15 1989-02-14 Canon Kabushiki Kaisha Apparatus for forming deposited film
JPS62271418A (ja) * 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
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US4841908A (en) * 1986-06-23 1989-06-27 Minnesota Mining And Manufacturing Company Multi-chamber deposition system
GB2195663B (en) * 1986-08-15 1990-08-22 Nippon Telegraph & Telephone Chemical vapour deposition method and apparatus therefor
US4920917A (en) * 1987-03-18 1990-05-01 Teijin Limited Reactor for depositing a layer on a moving substrate
JPS63262472A (ja) * 1987-04-20 1988-10-28 Sanyo Electric Co Ltd 膜形成方法
US5155565A (en) * 1988-02-05 1992-10-13 Minnesota Mining And Manufacturing Company Method for manufacturing an amorphous silicon thin film solar cell and Schottky diode on a common substrate
US4862827A (en) * 1988-06-28 1989-09-05 Wacker-Chemie Gmbh Apparatus for coating semiconductor components on a dielectric film
US5053625A (en) * 1988-08-04 1991-10-01 Minnesota Mining And Manufacturing Company Surface characterization apparatus and method
US5001939A (en) * 1988-08-04 1991-03-26 Minnesota Mining And Manufacturing Co. Surface characterization apparatus and method
US5071670A (en) * 1990-06-11 1991-12-10 Kelly Michael A Method for chemical vapor deposition under a single reactor vessel divided into separate reaction chambers each with its own depositing and exhausting means
US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
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JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
JP2810532B2 (ja) * 1990-11-29 1998-10-15 キヤノン株式会社 堆積膜形成方法及び堆積膜形成装置
US6979840B1 (en) * 1991-09-25 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Thin film transistors having anodized metal film between the gate wiring and drain wiring
US5919310A (en) * 1991-10-07 1999-07-06 Canon Kabushiki Kaisha Continuously film-forming apparatus provided with improved gas gate means
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Also Published As

Publication number Publication date
EP0076426B1 (en) 1986-11-26
JPS5870524A (ja) 1983-04-27
IE822164L (en) 1983-03-28
PT75612B (en) 1984-10-29
JPH0338731B2 (es) 1991-06-11
ZA826615B (en) 1983-08-31
ES516034A0 (es) 1983-10-16
ES522825A0 (es) 1984-09-16
KR900007042B1 (ko) 1990-09-27
IE53843B1 (en) 1989-03-15
EP0076426A3 (en) 1984-07-25
CA1186280A (en) 1985-04-30
IL66784A0 (en) 1982-12-31
IN157462B (es) 1986-04-05
IL66784A (en) 1985-09-29
US4438723A (en) 1984-03-27
ES8407626A1 (es) 1984-09-16
PT75612A (en) 1982-10-01
AU552270B2 (en) 1986-05-29
AU8813682A (en) 1983-04-14
BR8205600A (pt) 1983-08-30
ATE23883T1 (de) 1986-12-15
EP0076426A2 (en) 1983-04-13
PH18998A (en) 1985-12-03
DE3274470D1 (en) 1987-01-15

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