ATE23883T1 - Vorrichtung zum niederschlag und zur isolation mit mehreren kammern. - Google Patents

Vorrichtung zum niederschlag und zur isolation mit mehreren kammern.

Info

Publication number
ATE23883T1
ATE23883T1 AT82108699T AT82108699T ATE23883T1 AT E23883 T1 ATE23883 T1 AT E23883T1 AT 82108699 T AT82108699 T AT 82108699T AT 82108699 T AT82108699 T AT 82108699T AT E23883 T1 ATE23883 T1 AT E23883T1
Authority
AT
Austria
Prior art keywords
layers
chambers
chamber
deposition
conductivity
Prior art date
Application number
AT82108699T
Other languages
English (en)
Inventor
Vincent D Canella
Masatsugu Izu
Stephen J Hudgens
Original Assignee
Energy Conversion Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23184044&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=ATE23883(T1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Energy Conversion Devices Inc filed Critical Energy Conversion Devices Inc
Application granted granted Critical
Publication of ATE23883T1 publication Critical patent/ATE23883T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • C23C16/545—Apparatus specially adapted for continuous coating for coating elongated substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S118/00—Coating apparatus
    • Y10S118/90—Semiconductor vapor doping

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Photovoltaic Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Chemically Coating (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT82108699T 1981-09-28 1982-09-21 Vorrichtung zum niederschlag und zur isolation mit mehreren kammern. ATE23883T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/306,146 US4438723A (en) 1981-09-28 1981-09-28 Multiple chamber deposition and isolation system and method
EP82108699A EP0076426B1 (de) 1981-09-28 1982-09-21 Vorrichtung zum Niederschlag und zur Isolation mit mehreren Kammern

Publications (1)

Publication Number Publication Date
ATE23883T1 true ATE23883T1 (de) 1986-12-15

Family

ID=23184044

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82108699T ATE23883T1 (de) 1981-09-28 1982-09-21 Vorrichtung zum niederschlag und zur isolation mit mehreren kammern.

Country Status (16)

Country Link
US (1) US4438723A (de)
EP (1) EP0076426B1 (de)
JP (1) JPS5870524A (de)
KR (1) KR900007042B1 (de)
AT (1) ATE23883T1 (de)
AU (1) AU552270B2 (de)
BR (1) BR8205600A (de)
CA (1) CA1186280A (de)
DE (1) DE3274470D1 (de)
ES (2) ES8400635A1 (de)
IE (1) IE53843B1 (de)
IL (1) IL66784A (de)
IN (1) IN157462B (de)
PH (1) PH18998A (de)
PT (1) PT75612B (de)
ZA (1) ZA826615B (de)

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US6784033B1 (en) 1984-02-15 2004-08-31 Semiconductor Energy Laboratory Co., Ltd. Method for the manufacture of an insulated gate field effect semiconductor device
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US5281541A (en) * 1990-09-07 1994-01-25 Canon Kabushiki Kaisha Method for repairing an electrically short-circuited semiconductor device, and process for producing a semiconductor device utilizing said method
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JP2824808B2 (ja) * 1990-11-16 1998-11-18 キヤノン株式会社 マイクロ波プラズマｃｖｄ法による大面積の機能性堆積膜を連続的に形成する装置
US5629054A (en) * 1990-11-20 1997-05-13 Canon Kabushiki Kaisha Method for continuously forming a functional deposit film of large area by micro-wave plasma CVD method
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Also Published As

Publication number Publication date
IL66784A0 (en) 1982-12-31
ZA826615B (en) 1983-08-31
EP0076426A3 (en) 1984-07-25
ES522825A0 (es) 1984-09-16
EP0076426B1 (de) 1986-11-26
EP0076426A2 (de) 1983-04-13
ES8407626A1 (es) 1984-09-16
JPH0338731B2 (de) 1991-06-11
CA1186280A (en) 1985-04-30
ES516034A0 (es) 1983-10-16
AU552270B2 (en) 1986-05-29
US4438723A (en) 1984-03-27
JPS5870524A (ja) 1983-04-27
IE53843B1 (en) 1989-03-15
KR900007042B1 (ko) 1990-09-27
IN157462B (de) 1986-04-05
IL66784A (en) 1985-09-29
PT75612A (en) 1982-10-01
BR8205600A (pt) 1983-08-30
DE3274470D1 (en) 1987-01-15
ES8400635A1 (es) 1983-10-16
AU8813682A (en) 1983-04-14
PH18998A (en) 1985-12-03
IE822164L (en) 1983-03-28
PT75612B (en) 1984-10-29

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Legal Events

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UEP Publication of translation of european patent specification
EELA Cancelled due to lapse of time