JPS5542049A - Hydrogen gas detecting element - Google Patents

Hydrogen gas detecting element

Info

Publication number
JPS5542049A
JPS5542049A JP11550578A JP11550578A JPS5542049A JP S5542049 A JPS5542049 A JP S5542049A JP 11550578 A JP11550578 A JP 11550578A JP 11550578 A JP11550578 A JP 11550578A JP S5542049 A JPS5542049 A JP S5542049A
Authority
JP
Japan
Prior art keywords
thin film
hydrogen gas
detecting element
film
varying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11550578A
Other languages
Japanese (ja)
Other versions
JPS6133130B2 (en
Inventor
Kentaro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ITO KENTAROU
Original Assignee
ITO KENTAROU
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ITO KENTAROU filed Critical ITO KENTAROU
Priority to JP11550578A priority Critical patent/JPS5542049A/en
Publication of JPS5542049A publication Critical patent/JPS5542049A/en
Publication of JPS6133130B2 publication Critical patent/JPS6133130B2/ja
Granted legal-status Critical Current

Links

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  • Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)

Abstract

PURPOSE: To enable detection of hydrogen gas stably at room temperature by a hydrogen gas detecting element by making a semiconductor contact with a metallic thin film varying its work function by hydrogen absorption.
CONSTITUTION: Crystal 1 of semiconductor such as, for example, zinc oxide, tin oxide, etc. is surface treated to thereby remove its machined layer, irregular layer, contamination. After an insulator 2 such as, for example, silicon nitride film is coated on the crystal 1, it is perforated by a photoetching process, and accumulated with ormic contact electrode 3 such as, for example, indium film by a vacuum depositing process, and with a metallic thin film 4 such as palladium thin film, nickel thin film, etc. varying its work function by hydrogen absorption. Lead wires 5 and 6 are mounted to the electrode 3 and the thin film 4, respectively to thereby form a diode.
COPYRIGHT: (C)1980,JPO&Japio
JP11550578A 1978-09-20 1978-09-20 Hydrogen gas detecting element Granted JPS5542049A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11550578A JPS5542049A (en) 1978-09-20 1978-09-20 Hydrogen gas detecting element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11550578A JPS5542049A (en) 1978-09-20 1978-09-20 Hydrogen gas detecting element

Publications (2)

Publication Number Publication Date
JPS5542049A true JPS5542049A (en) 1980-03-25
JPS6133130B2 JPS6133130B2 (en) 1986-07-31

Family

ID=14664172

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11550578A Granted JPS5542049A (en) 1978-09-20 1978-09-20 Hydrogen gas detecting element

Country Status (1)

Country Link
JP (1) JPS5542049A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658761A1 (en) * 1993-12-06 1995-06-21 Motorola Inc. Gas vapor sensor element and method of forming

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0658761A1 (en) * 1993-12-06 1995-06-21 Motorola Inc. Gas vapor sensor element and method of forming

Also Published As

Publication number Publication date
JPS6133130B2 (en) 1986-07-31

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