DE69932227D1 - Herstellungsverfahren einer photoelektrischen Dünnschicht-Umwandlungsanordnung aus amorphem Silizium - Google Patents

Herstellungsverfahren einer photoelektrischen Dünnschicht-Umwandlungsanordnung aus amorphem Silizium

Info

Publication number
DE69932227D1
DE69932227D1 DE69932227T DE69932227T DE69932227D1 DE 69932227 D1 DE69932227 D1 DE 69932227D1 DE 69932227 T DE69932227 T DE 69932227T DE 69932227 T DE69932227 T DE 69932227T DE 69932227 D1 DE69932227 D1 DE 69932227D1
Authority
DE
Germany
Prior art keywords
gas
photoelectric conversion
amorphous silicon
type
conversion device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69932227T
Other languages
English (en)
Other versions
DE69932227T2 (de
Inventor
Masashi Yoshimi
Kenji Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaneka Corp
Original Assignee
Kaneka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=12851221&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69932227(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Kaneka Corp filed Critical Kaneka Corp
Application granted granted Critical
Publication of DE69932227D1 publication Critical patent/DE69932227D1/de
Publication of DE69932227T2 publication Critical patent/DE69932227T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Light Receiving Elements (AREA)
DE69932227T 1999-02-26 1999-09-03 Herstellungsverfahren einer photoelektrischen Dünnschicht-Umwandlungsanordnung aus amorphem Silizium Expired - Lifetime DE69932227T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11050152A JP3046965B1 (ja) 1999-02-26 1999-02-26 非晶質シリコン系薄膜光電変換装置の製造方法
JP5015299 1999-02-26

Publications (2)

Publication Number Publication Date
DE69932227D1 true DE69932227D1 (de) 2006-08-17
DE69932227T2 DE69932227T2 (de) 2007-06-06

Family

ID=12851221

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69932227T Expired - Lifetime DE69932227T2 (de) 1999-02-26 1999-09-03 Herstellungsverfahren einer photoelektrischen Dünnschicht-Umwandlungsanordnung aus amorphem Silizium

Country Status (6)

Country Link
US (1) US6326304B1 (de)
EP (1) EP1032054B1 (de)
JP (1) JP3046965B1 (de)
AT (1) ATE332575T1 (de)
AU (1) AU761280B2 (de)
DE (1) DE69932227T2 (de)

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JP4510242B2 (ja) * 2000-07-11 2010-07-21 キヤノン株式会社 薄膜形成方法
JP3862615B2 (ja) 2002-06-10 2006-12-27 キヤノン株式会社 シリコン系薄膜形成装置およびシリコン系薄膜形成方法
JP2004095953A (ja) * 2002-09-02 2004-03-25 Canon Inc 窒化シリコンの堆積膜形成方法
JP2007208093A (ja) * 2006-02-03 2007-08-16 Canon Inc 堆積膜の形成方法及び光起電力素子の形成方法
UA81965C2 (xx) * 2006-02-14 2008-02-25 Александра Николаевна Шмирева Інтегральний тонкоплівковий фотомодуль$интегральный тонкопленочный модуль
US7655542B2 (en) 2006-06-23 2010-02-02 Applied Materials, Inc. Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device
JP2008115460A (ja) * 2006-10-12 2008-05-22 Canon Inc 半導体素子の形成方法及び光起電力素子の形成方法
US7501305B2 (en) 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
US8203071B2 (en) * 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080173350A1 (en) * 2007-01-18 2008-07-24 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US7582515B2 (en) * 2007-01-18 2009-09-01 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20080245414A1 (en) * 2007-04-09 2008-10-09 Shuran Sheng Methods for forming a photovoltaic device with low contact resistance
US7875486B2 (en) 2007-07-10 2011-01-25 Applied Materials, Inc. Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
CN101842875A (zh) 2007-11-02 2010-09-22 应用材料股份有限公司 在沉积处理间实施的等离子处理
US8076222B2 (en) * 2008-02-11 2011-12-13 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US7833885B2 (en) 2008-02-11 2010-11-16 Applied Materials, Inc. Microcrystalline silicon thin film transistor
US7888167B2 (en) * 2008-04-25 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for manufacturing the same
JP5377061B2 (ja) * 2008-05-09 2013-12-25 株式会社半導体エネルギー研究所 光電変換装置
US7955890B2 (en) * 2008-06-24 2011-06-07 Applied Materials, Inc. Methods for forming an amorphous silicon film in display devices
US8895842B2 (en) * 2008-08-29 2014-11-25 Applied Materials, Inc. High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells
KR101531700B1 (ko) * 2008-12-01 2015-06-25 주성엔지니어링(주) 박막형 태양전지의 제조방법
US9166089B2 (en) * 2009-03-02 2015-10-20 Kaneka Corporation Thin film solar cell module
WO2011001747A1 (ja) * 2009-06-30 2011-01-06 三洋電機株式会社 太陽電池の製造方法及び製造装置
WO2011011301A2 (en) * 2009-07-23 2011-01-27 Applied Materials, Inc. A mixed silicon phase film for high efficiency thin film silicon solar cells
WO2011046664A2 (en) * 2009-10-15 2011-04-21 Applied Materials, Inc. A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells
US20110126875A1 (en) * 2009-12-01 2011-06-02 Hien-Minh Huu Le Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition
US20110232753A1 (en) * 2010-03-23 2011-09-29 Applied Materials, Inc. Methods of forming a thin-film solar energy device
EP2558612A1 (de) * 2010-04-16 2013-02-20 Oerlikon Solar AG, Trübbach Verfahren und vorrichtung zur abscheidung eines mikrokristallinen materials bei pv-anwendungen
US8927857B2 (en) 2011-02-28 2015-01-06 International Business Machines Corporation Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices
KR101459502B1 (ko) 2011-07-13 2014-11-07 어플라이드 머티어리얼스, 인코포레이티드 박막 트랜지스터 디바이스들을 제조하는 방법들
JP6204917B2 (ja) 2011-10-07 2017-09-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ アルゴンガス希釈によるシリコン含有層を堆積するための方法
CN113755816B (zh) * 2021-09-09 2023-12-19 理想万里晖真空装备(泰兴)有限公司 用于改善反应腔粉尘的预镀膜方法及所形成的预镀膜

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JPS62271418A (ja) 1986-05-20 1987-11-25 Matsushita Electric Ind Co Ltd 非晶質シリコン半導体素子の製造方法
CH668145A5 (fr) * 1986-09-26 1988-11-30 Inst Microtechnique De L Unive Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma.
US5242505A (en) * 1991-12-03 1993-09-07 Electric Power Research Institute Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects
US5582880A (en) * 1992-03-27 1996-12-10 Canon Kabushiki Kaisha Method of manufacturing non-single crystal film and non-single crystal semiconductor device
JP3201492B2 (ja) 1992-03-27 2001-08-20 キヤノン株式会社 非晶質シリコン膜の製造方法、非晶質窒化シリコン膜の製造方法、微結晶シリコン膜の製造方法、及び非単結晶半導体装置
JPH065522A (ja) 1992-06-17 1994-01-14 Mitsubishi Heavy Ind Ltd 高周波プラズマｃｖｄ装置
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JP2564753B2 (ja) 1993-05-13 1996-12-18 株式会社 半導体エネルギー研究所 プラズマ気相反応方法
JP3163875B2 (ja) 1993-09-30 2001-05-08 株式会社島津製作所 医用画像処理装置
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US5677236A (en) * 1995-02-24 1997-10-14 Mitsui Toatsu Chemicals, Inc. Process for forming a thin microcrystalline silicon semiconductor film
JP3241234B2 (ja) 1995-04-28 2001-12-25 シャープ株式会社 薄膜太陽電池およびその製造方法
US5902650A (en) * 1995-07-11 1999-05-11 Applied Komatsu Technology, Inc. Method of depositing amorphous silicon based films having controlled conductivity

Also Published As

Publication number Publication date
US6326304B1 (en) 2001-12-04
AU4473399A (en) 2000-08-31
ATE332575T1 (de) 2006-07-15
JP2000252484A (ja) 2000-09-14
AU761280B2 (en) 2003-05-29
DE69932227T2 (de) 2007-06-06
EP1032054B1 (de) 2006-07-05
JP3046965B1 (ja) 2000-05-29
EP1032054A3 (de) 2002-01-30
EP1032054A2 (de) 2000-08-30

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