ATE332575T1 - Herstellungsverfahren einer photoelektrischen dünnschicht-umwandlungsanordnung aus amorphem silizium - Google Patents
Herstellungsverfahren einer photoelektrischen dünnschicht-umwandlungsanordnung aus amorphem siliziumInfo
- Publication number
- ATE332575T1 ATE332575T1 AT99307040T AT99307040T ATE332575T1 AT E332575 T1 ATE332575 T1 AT E332575T1 AT 99307040 T AT99307040 T AT 99307040T AT 99307040 T AT99307040 T AT 99307040T AT E332575 T1 ATE332575 T1 AT E332575T1
- Authority
- AT
- Austria
- Prior art keywords
- gas
- photoelectric conversion
- amorphous silicon
- thin film
- type
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 title abstract 6
- 229910021417 amorphous silicon Inorganic materials 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000010409 thin film Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 9
- 238000010790 dilution Methods 0.000 abstract 4
- 239000012895 dilution Substances 0.000 abstract 4
- 239000002994 raw material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
- Chemical Vapour Deposition (AREA)
- Light Receiving Elements (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11050152A JP3046965B1 (ja) | 1999-02-26 | 1999-02-26 | 非晶質シリコン系薄膜光電変換装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE332575T1 true ATE332575T1 (de) | 2006-07-15 |
Family
ID=12851221
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT99307040T ATE332575T1 (de) | 1999-02-26 | 1999-09-03 | Herstellungsverfahren einer photoelektrischen dünnschicht-umwandlungsanordnung aus amorphem silizium |
Country Status (6)
Country | Link |
---|---|
US (1) | US6326304B1 (de) |
EP (1) | EP1032054B1 (de) |
JP (1) | JP3046965B1 (de) |
AT (1) | ATE332575T1 (de) |
AU (1) | AU761280B2 (de) |
DE (1) | DE69932227T2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001345273A (ja) | 2000-05-31 | 2001-12-14 | Canon Inc | シリコン系薄膜の形成方法、シリコン系薄膜及び光起電力素子 |
JP4510242B2 (ja) * | 2000-07-11 | 2010-07-21 | キヤノン株式会社 | 薄膜形成方法 |
JP3862615B2 (ja) | 2002-06-10 | 2006-12-27 | キヤノン株式会社 | シリコン系薄膜形成装置およびシリコン系薄膜形成方法 |
JP2004095953A (ja) * | 2002-09-02 | 2004-03-25 | Canon Inc | 窒化シリコンの堆積膜形成方法 |
JP2007208093A (ja) | 2006-02-03 | 2007-08-16 | Canon Inc | 堆積膜の形成方法及び光起電力素子の形成方法 |
UA81965C2 (en) * | 2006-02-14 | 2008-02-25 | Александра Николаевна Шмирева | Integral thin-film module |
US7655542B2 (en) * | 2006-06-23 | 2010-02-02 | Applied Materials, Inc. | Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device |
JP2008115460A (ja) * | 2006-10-12 | 2008-05-22 | Canon Inc | 半導体素子の形成方法及び光起電力素子の形成方法 |
US7501305B2 (en) | 2006-10-23 | 2009-03-10 | Canon Kabushiki Kaisha | Method for forming deposited film and photovoltaic element |
US8203071B2 (en) * | 2007-01-18 | 2012-06-19 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US7582515B2 (en) * | 2007-01-18 | 2009-09-01 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US20080173350A1 (en) * | 2007-01-18 | 2008-07-24 | Applied Materials, Inc. | Multi-junction solar cells and methods and apparatuses for forming the same |
US20080245414A1 (en) * | 2007-04-09 | 2008-10-09 | Shuran Sheng | Methods for forming a photovoltaic device with low contact resistance |
US7875486B2 (en) | 2007-07-10 | 2011-01-25 | Applied Materials, Inc. | Solar cells and methods and apparatuses for forming the same including I-layer and N-layer chamber cleaning |
US20090104733A1 (en) * | 2007-10-22 | 2009-04-23 | Yong Kee Chae | Microcrystalline silicon deposition for thin film solar applications |
KR20100095426A (ko) | 2007-11-02 | 2010-08-30 | 어플라이드 머티어리얼스, 인코포레이티드 | 증착 공정들 간의 플라즈마 처리 |
US7833885B2 (en) | 2008-02-11 | 2010-11-16 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
US8076222B2 (en) * | 2008-02-11 | 2011-12-13 | Applied Materials, Inc. | Microcrystalline silicon thin film transistor |
US7888167B2 (en) * | 2008-04-25 | 2011-02-15 | Semiconductor Energy Laboratory Co., Ltd. | Photoelectric conversion device and method for manufacturing the same |
JP5377061B2 (ja) * | 2008-05-09 | 2013-12-25 | 株式会社半導体エネルギー研究所 | 光電変換装置 |
US7955890B2 (en) * | 2008-06-24 | 2011-06-07 | Applied Materials, Inc. | Methods for forming an amorphous silicon film in display devices |
US8895842B2 (en) * | 2008-08-29 | 2014-11-25 | Applied Materials, Inc. | High quality TCO-silicon interface contact structure for high efficiency thin film silicon solar cells |
KR101531700B1 (ko) * | 2008-12-01 | 2015-06-25 | 주성엔지니어링(주) | 박막형 태양전지의 제조방법 |
WO2010101030A1 (ja) * | 2009-03-02 | 2010-09-10 | 株式会社カネカ | 薄膜太陽電池モジュール |
EP2450958A1 (de) * | 2009-06-30 | 2012-05-09 | Sanyo Electric Co., Ltd. | Herstellungsverfahren und vorrichtung zur herstellung einer solarbatterie |
WO2011011301A2 (en) * | 2009-07-23 | 2011-01-27 | Applied Materials, Inc. | A mixed silicon phase film for high efficiency thin film silicon solar cells |
WO2011046664A2 (en) * | 2009-10-15 | 2011-04-21 | Applied Materials, Inc. | A barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cells |
US20110126875A1 (en) * | 2009-12-01 | 2011-06-02 | Hien-Minh Huu Le | Conductive contact layer formed on a transparent conductive layer by a reactive sputter deposition |
US20110232753A1 (en) * | 2010-03-23 | 2011-09-29 | Applied Materials, Inc. | Methods of forming a thin-film solar energy device |
CN105887040A (zh) * | 2010-04-16 | 2016-08-24 | 瑞士艾发科技 | 用于在光伏应用中沉积微晶材料的方法和设备 |
US8927857B2 (en) | 2011-02-28 | 2015-01-06 | International Business Machines Corporation | Silicon: hydrogen photovoltaic devices, such as solar cells, having reduced light induced degradation and method of making such devices |
JP6078063B2 (ja) | 2011-07-13 | 2017-02-08 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 薄膜トランジスタデバイスの製造方法 |
KR20140074352A (ko) | 2011-10-07 | 2014-06-17 | 어플라이드 머티어리얼스, 인코포레이티드 | 아르곤 가스 희석으로 실리콘 함유 층을 증착하기 위한 방법들 |
CN113755816B (zh) * | 2021-09-09 | 2023-12-19 | 理想万里晖真空装备(泰兴)有限公司 | 用于改善反应腔粉尘的预镀膜方法及所形成的预镀膜 |
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US5262262A (en) * | 1985-05-31 | 1993-11-16 | Fuji Xerox Co., Ltd. | Electrophotographic photoreceptor having conductive layer and amorphous carbon overlayer |
JPS62271418A (ja) | 1986-05-20 | 1987-11-25 | Matsushita Electric Ind Co Ltd | 非晶質シリコン半導体素子の製造方法 |
CH668145A5 (fr) * | 1986-09-26 | 1988-11-30 | Inst Microtechnique De L Unive | Procede et installation de depot de silicium amorphe hydrogene sur un substrat dans une enceinte a plasma. |
US5242505A (en) * | 1991-12-03 | 1993-09-07 | Electric Power Research Institute | Amorphous silicon-based photovoltaic semiconductor materials free from Staebler-Wronski effects |
US5582880A (en) * | 1992-03-27 | 1996-12-10 | Canon Kabushiki Kaisha | Method of manufacturing non-single crystal film and non-single crystal semiconductor device |
JP3201492B2 (ja) | 1992-03-27 | 2001-08-20 | キヤノン株式会社 | 非晶質シリコン膜の製造方法、非晶質窒化シリコン膜の製造方法、微結晶シリコン膜の製造方法、及び非単結晶半導体装置 |
JPH065522A (ja) | 1992-06-17 | 1994-01-14 | Mitsubishi Heavy Ind Ltd | 高周波プラズマcvd装置 |
JP2761156B2 (ja) * | 1992-06-30 | 1998-06-04 | キヤノン株式会社 | 光起電力素子及びその製造方法、並びにそれを用いた発電装置 |
JP2564753B2 (ja) | 1993-05-13 | 1996-12-18 | 株式会社 半導体エネルギー研究所 | プラズマ気相反応方法 |
JP3163875B2 (ja) | 1993-09-30 | 2001-05-08 | 株式会社島津製作所 | 医用画像処理装置 |
CN1135635C (zh) | 1994-03-25 | 2004-01-21 | 阿莫科/恩龙太阳公司 | 增强光电器件和电子器件的光和电特性的等离子淀积工艺 |
US5677236A (en) * | 1995-02-24 | 1997-10-14 | Mitsui Toatsu Chemicals, Inc. | Process for forming a thin microcrystalline silicon semiconductor film |
JP3241234B2 (ja) | 1995-04-28 | 2001-12-25 | シャープ株式会社 | 薄膜太陽電池およびその製造方法 |
US5902650A (en) * | 1995-07-11 | 1999-05-11 | Applied Komatsu Technology, Inc. | Method of depositing amorphous silicon based films having controlled conductivity |
-
1999
- 1999-02-26 JP JP11050152A patent/JP3046965B1/ja not_active Expired - Lifetime
- 1999-08-27 AU AU44733/99A patent/AU761280B2/en not_active Ceased
- 1999-09-03 US US09/390,040 patent/US6326304B1/en not_active Expired - Lifetime
- 1999-09-03 AT AT99307040T patent/ATE332575T1/de not_active IP Right Cessation
- 1999-09-03 DE DE69932227T patent/DE69932227T2/de not_active Expired - Lifetime
- 1999-09-03 EP EP99307040A patent/EP1032054B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU4473399A (en) | 2000-08-31 |
AU761280B2 (en) | 2003-05-29 |
EP1032054A2 (de) | 2000-08-30 |
JP3046965B1 (ja) | 2000-05-29 |
DE69932227T2 (de) | 2007-06-06 |
EP1032054A3 (de) | 2002-01-30 |
DE69932227D1 (de) | 2006-08-17 |
JP2000252484A (ja) | 2000-09-14 |
EP1032054B1 (de) | 2006-07-05 |
US6326304B1 (en) | 2001-12-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |