IL146275A0 - Programming and erasing methods for an nrom array - Google Patents
Programming and erasing methods for an nrom arrayInfo
- Publication number
- IL146275A0 IL146275A0 IL14627501A IL14627501A IL146275A0 IL 146275 A0 IL146275 A0 IL 146275A0 IL 14627501 A IL14627501 A IL 14627501A IL 14627501 A IL14627501 A IL 14627501A IL 146275 A0 IL146275 A0 IL 146275A0
- Authority
- IL
- Israel
- Prior art keywords
- programming
- erasing methods
- nrom array
- nrom
- array
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
- G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/730,586 US6928001B2 (en) | 2000-12-07 | 2000-12-07 | Programming and erasing methods for a non-volatile memory cell |
Publications (1)
Publication Number | Publication Date |
---|---|
IL146275A0 true IL146275A0 (en) | 2002-07-25 |
Family
ID=24935933
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IL14627501A IL146275A0 (en) | 2000-12-07 | 2001-11-01 | Programming and erasing methods for an nrom array |
Country Status (4)
Country | Link |
---|---|
US (2) | US6928001B2 (xx) |
EP (1) | EP1227501A3 (xx) |
JP (1) | JP2002319288A (xx) |
IL (1) | IL146275A0 (xx) |
Families Citing this family (76)
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-
2000
- 2000-12-07 US US09/730,586 patent/US6928001B2/en not_active Expired - Lifetime
-
2001
- 2001-11-01 EP EP01309290A patent/EP1227501A3/en not_active Withdrawn
- 2001-11-01 IL IL14627501A patent/IL146275A0/xx unknown
- 2001-11-02 JP JP2001338271A patent/JP2002319288A/ja active Pending
-
2002
- 2002-05-28 US US10/155,216 patent/US6937521B2/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US20030002345A1 (en) | 2003-01-02 |
JP2002319288A (ja) | 2002-10-31 |
US20040222437A1 (en) | 2004-11-11 |
EP1227501A3 (en) | 2003-07-30 |
US6928001B2 (en) | 2005-08-09 |
EP1227501A2 (en) | 2002-07-31 |
US6937521B2 (en) | 2005-08-30 |
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