AU2001265091A1 - Method and apparatus for predective flash memory erase and write times - Google Patents

Method and apparatus for predective flash memory erase and write times

Info

Publication number
AU2001265091A1
AU2001265091A1 AU2001265091A AU6509101A AU2001265091A1 AU 2001265091 A1 AU2001265091 A1 AU 2001265091A1 AU 2001265091 A AU2001265091 A AU 2001265091A AU 6509101 A AU6509101 A AU 6509101A AU 2001265091 A1 AU2001265091 A1 AU 2001265091A1
Authority
AU
Australia
Prior art keywords
predective
flash memory
write times
memory erase
erase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001265091A
Inventor
Robert Jacobs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU2001265091A1 publication Critical patent/AU2001265091A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
AU2001265091A 2000-06-06 2001-05-25 Method and apparatus for predective flash memory erase and write times Abandoned AU2001265091A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/588,864 US6684288B1 (en) 2000-06-06 2000-06-06 Method and apparatus for predictive flash memory erase and write times
US09588864 2000-06-06
PCT/US2001/017264 WO2001095338A2 (en) 2000-06-06 2001-05-25 Method and apparatus for predective flash memory erase and write times

Publications (1)

Publication Number Publication Date
AU2001265091A1 true AU2001265091A1 (en) 2001-12-17

Family

ID=24355610

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001265091A Abandoned AU2001265091A1 (en) 2000-06-06 2001-05-25 Method and apparatus for predective flash memory erase and write times

Country Status (8)

Country Link
US (2) US6684288B1 (en)
JP (1) JP4076439B2 (en)
KR (1) KR100487720B1 (en)
CN (1) CN1383565A (en)
AU (1) AU2001265091A1 (en)
DE (1) DE10192507B4 (en)
TW (1) TW541457B (en)
WO (1) WO2001095338A2 (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6684288B1 (en) * 2000-06-06 2004-01-27 Intel Corporation Method and apparatus for predictive flash memory erase and write times
US7265529B2 (en) 2004-08-19 2007-09-04 Micron Technologgy, Inc. Zero power start-up circuit
KR100672105B1 (en) * 2005-09-15 2007-01-19 주식회사 하이닉스반도체 Method for operating flash memory chips
US7426605B2 (en) * 2005-09-30 2008-09-16 Rudelic John C Method and apparatus for optimizing flash device erase distribution
JP5219410B2 (en) * 2007-06-27 2013-06-26 京セラ株式会社 Mobile terminal device
US8032690B2 (en) * 2008-02-01 2011-10-04 Skymedi Corporation Non-volatile memory device, and method of accessing a non-volatile memory device
KR102285462B1 (en) 2014-03-26 2021-08-05 삼성전자주식회사 Method of operating memory system including nonvolatile memory and memory controller
CN104391804B (en) * 2014-10-28 2017-11-28 陕西千山航空电子有限责任公司 A kind of NAND flash data storage methods
KR102291806B1 (en) 2015-04-20 2021-08-24 삼성전자주식회사 Nonvolatile memory system and operation method thereof
DE102015209185A1 (en) * 2015-05-20 2016-11-24 Siemens Schweiz Ag Method for determining the transmission time or the remaining transmission time of data to a bus device of a bus-oriented programmable electrical installation
US9977597B2 (en) 2016-05-10 2018-05-22 Seagate Technology Llc Enhanced read recovery based on write time information
TWI595412B (en) * 2016-09-09 2017-08-11 大心電子（英屬維京群島）股份有限公司 Data transmitting method, memory storage device and memory control circuit unit
CN116882335B (en) * 2023-09-06 2023-12-22 上海芯存天下电子科技有限公司 Operation time simulation acquisition method and device, electronic equipment and storage medium

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1252261B (en) * 1991-11-15 1995-06-08 Alcatel Italia METHOD OF UPDATING STORING DATA IN MEMORY LOCATIONS OF A MEMORY UNIT, IN PARTICULAR OF A FLASH EPROM MEMORY
US5357463A (en) * 1992-11-17 1994-10-18 Micron Semiconductor, Inc. Method for reverse programming of a flash EEPROM
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
JP3215237B2 (en) * 1993-10-01 2001-10-02 富士通株式会社 Storage device and method for writing / erasing storage device
JPH08115597A (en) * 1994-10-17 1996-05-07 Mitsubishi Electric Corp Semiconductor disk device
US6052314A (en) * 1997-05-22 2000-04-18 Rohm Co., Ltd. EEPROM device
KR100297986B1 (en) * 1998-03-13 2001-10-25 김영환 Wear levelling system of flash memory cell array and wear levelling method thereof
US6684288B1 (en) * 2000-06-06 2004-01-27 Intel Corporation Method and apparatus for predictive flash memory erase and write times

Also Published As

Publication number Publication date
US6880038B2 (en) 2005-04-12
WO2001095338A2 (en) 2001-12-13
US20040143698A1 (en) 2004-07-22
KR20030009282A (en) 2003-01-29
KR100487720B1 (en) 2005-05-03
DE10192507T1 (en) 2002-12-12
CN1383565A (en) 2002-12-04
US6684288B1 (en) 2004-01-27
TW541457B (en) 2003-07-11
JP4076439B2 (en) 2008-04-16
JP2003536198A (en) 2003-12-02
WO2001095338A3 (en) 2002-03-21
DE10192507B4 (en) 2010-05-06

Similar Documents

Publication Publication Date Title
AU5474100A (en) Method and apparatus for decreasing block write operation times performed on nonvolatile memory
AU2003277017A1 (en) Non-volatile memory device and method for forming
IL146275A0 (en) Programming and erasing methods for an nrom array
AU2001283185A1 (en) Method and system for dual bit memory erase verification
EP1413959A4 (en) Flash memory apparatus and method for merging data stored in the same
EP1554732B8 (en) Highly compact non-volatile memory and method thereof
EP1347383A4 (en) Data recorder and method for recording data in flash memory
AU2002336227A1 (en) Method and apparatus for biasing selected and unselected array lines when writing a memory array
AU3124700A (en) Floating gate memory apparatus and method for selected programming thereof
AU4868399A (en) Methods and apparatus for updating a nonvolatile memory
AU2002349062A1 (en) Read/write device for optical memory and method therefore
AU2003256994A1 (en) Method of apparatus for preventing overtunneling in pfet-based nonvolatile memory cells
AU2002251705A1 (en) Method of reducing disturbs in non-volatile memory
AU2003296988A1 (en) An improved method for making high-density nonvolatile memory
GB0116054D0 (en) Nonvolatile semiconductor memory device and method for recording information
EP1473737A4 (en) Non-volatile storage device and control method thereof
GB0008507D0 (en) Semiconductor memory device and related method for controlling reading and writing
AU2001265091A1 (en) Method and apparatus for predective flash memory erase and write times
AU2001255690A1 (en) Methods and apparatus for authenticating data stored in memory
AU2003303724A1 (en) Method and apparatus for emulating an eeprom using non-volatile floating gate memory cells
AU2001229556A1 (en) Method and apparatus for low voltage sensing in flash memories
EP1575056A4 (en) Non-volatile memory and write method thereof
AU2001269903A1 (en) Block-level read while write method and apparatus
AU2003207364A1 (en) Non-volatile memory test structure and method
EP1420345A4 (en) Non-volatile storage device and control method thereof