HK90993A - A dynamic random access memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor - Google Patents
A dynamic random access memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method thereforInfo
- Publication number
- HK90993A HK90993A HK909/93A HK90993A HK90993A HK 90993 A HK90993 A HK 90993A HK 909/93 A HK909/93 A HK 909/93A HK 90993 A HK90993 A HK 90993A HK 90993 A HK90993 A HK 90993A
- Authority
- HK
- Hong Kong
- Prior art keywords
- memory device
- random access
- access memory
- dynamic random
- method therefor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
- H01L21/743—Making of internal connections, substrate contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8221—Three dimensional integrated circuits stacked in different levels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
- H10B12/373—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate the capacitor extending under or around the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/789,675 US4649625A (en) | 1985-10-21 | 1985-10-21 | Dynamic memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
Publications (1)
Publication Number | Publication Date |
---|---|
HK90993A true HK90993A (en) | 1993-09-10 |
Family
ID=25148357
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK909/93A HK90993A (en) | 1985-10-21 | 1993-09-02 | A dynamic random access memory device having a single-crystal transistor on a trench capacitor structure and a fabrication method therefor |
Country Status (13)
Country | Link |
---|---|
US (1) | US4649625A (ko) |
EP (1) | EP0220410B1 (ko) |
JP (1) | JPH06101546B2 (ko) |
KR (1) | KR900002885B1 (ko) |
CN (1) | CN1005883B (ko) |
AU (1) | AU575499B2 (ko) |
BR (1) | BR8604546A (ko) |
CA (1) | CA1232362A (ko) |
DE (1) | DE3688231T2 (ko) |
ES (1) | ES2003376A6 (ko) |
HK (1) | HK90993A (ko) |
IN (1) | IN167820B (ko) |
ZA (1) | ZA866625B (ko) |
Families Citing this family (94)
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US5102817A (en) * | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPS63500484A (ja) * | 1985-07-25 | 1988-02-18 | アメリカン テレフオン アンド テレグラフ カムパニ− | 溝容量を含む高動作特性dramアレイ |
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US4829017A (en) * | 1986-09-25 | 1989-05-09 | Texas Instruments Incorporated | Method for lubricating a high capacity dram cell |
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US4916524A (en) * | 1987-03-16 | 1990-04-10 | Texas Instruments Incorporated | Dram cell and method |
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US4833516A (en) * | 1987-08-03 | 1989-05-23 | International Business Machines Corporation | High density memory cell structure having a vertical trench transistor self-aligned with a vertical trench capacitor and fabrication methods therefor |
US5109259A (en) * | 1987-09-22 | 1992-04-28 | Texas Instruments Incorporated | Multiple DRAM cells in a trench |
US4942554A (en) * | 1987-11-26 | 1990-07-17 | Siemens Aktiengesellschaft | Three-dimensional, one-transistor cell arrangement for dynamic semiconductor memories comprising trench capacitor and method for manufacturing same |
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US5225363A (en) * | 1988-06-28 | 1993-07-06 | Texas Instruments Incorporated | Trench capacitor DRAM cell and method of manufacture |
US4958206A (en) * | 1988-06-28 | 1990-09-18 | Texas Instruments Incorporated | Diffused bit line trench capacitor dram cell |
US5105245A (en) * | 1988-06-28 | 1992-04-14 | Texas Instruments Incorporated | Trench capacitor DRAM cell with diffused bit lines adjacent to a trench |
US5200354A (en) * | 1988-07-22 | 1993-04-06 | Hyundai Electronics Industries Co. Ltd. | Method for manufacturing dynamic random access memory cell |
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US4954854A (en) * | 1989-05-22 | 1990-09-04 | International Business Machines Corporation | Cross-point lightly-doped drain-source trench transistor and fabrication process therefor |
US5021355A (en) * | 1989-05-22 | 1991-06-04 | International Business Machines Corporation | Method of fabricating cross-point lightly-doped drain-source trench transistor |
US5316962A (en) * | 1989-08-15 | 1994-05-31 | Matsushita Electric Industrial Co., Ltd. | Method of producing a semiconductor device having trench capacitors and vertical switching transistors |
JP2798276B2 (ja) * | 1989-09-18 | 1998-09-17 | 三菱電機株式会社 | 半導体記憶装置及びその製造方法 |
US5034787A (en) * | 1990-06-28 | 1991-07-23 | International Business Machines Corporation | Structure and fabrication method for a double trench memory cell device |
US5064777A (en) * | 1990-06-28 | 1991-11-12 | International Business Machines Corporation | Fabrication method for a double trench memory cell device |
US4988637A (en) * | 1990-06-29 | 1991-01-29 | International Business Machines Corp. | Method for fabricating a mesa transistor-trench capacitor memory cell structure |
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JPH07118522B2 (ja) * | 1990-10-24 | 1995-12-18 | インターナショナル・ビジネス・マシーンズ・コーポレイション | 基板表面を酸化処理するための方法及び半導体の構造 |
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US6222254B1 (en) | 1997-03-31 | 2001-04-24 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
US7067406B2 (en) * | 1997-03-31 | 2006-06-27 | Intel Corporation | Thermal conducting trench in a semiconductor structure and method for forming the same |
US5892707A (en) * | 1997-04-25 | 1999-04-06 | Micron Technology, Inc. | Memory array having a digit line buried in an isolation region and method for forming same |
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US5843820A (en) * | 1997-09-29 | 1998-12-01 | Vanguard International Semiconductor Corporation | Method of fabricating a new dynamic random access memory (DRAM) cell having a buried horizontal trench capacitor |
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US7385251B2 (en) * | 2006-01-18 | 2008-06-10 | International Business Machines Corporation | Area-efficient gated diode structure and method of forming same |
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US20080042208A1 (en) * | 2006-08-16 | 2008-02-21 | Force Mos Technology Co., Ltd. | Trench mosfet with esd trench capacitor |
US20080310220A1 (en) * | 2007-06-13 | 2008-12-18 | International Business Machines Corporation | 3-d sram array to improve stability and performance |
US7755926B2 (en) * | 2007-06-13 | 2010-07-13 | International Business Machines Corporation | 3-D SRAM array to improve stability and performance |
US10205032B2 (en) * | 2010-09-20 | 2019-02-12 | Infineon Technologies Ag | Semiconductor structure and method for making same |
US9059030B2 (en) * | 2011-10-07 | 2015-06-16 | Micron Technology, Inc. | Memory cells having capacitor dielectric directly against a transistor source/drain region |
CN104617091A (zh) * | 2013-11-01 | 2015-05-13 | 华邦电子股份有限公司 | 集成电路的电容 |
CN105097794A (zh) * | 2014-04-25 | 2015-11-25 | 中芯国际集成电路制造(上海)有限公司 | Esd防护器件及其制作方法 |
CN111900168A (zh) * | 2016-01-25 | 2020-11-06 | 中国科学院微电子研究所 | 存储单元、存储器件及电子设备 |
CN106876278A (zh) * | 2017-03-01 | 2017-06-20 | 上海华虹宏力半导体制造有限公司 | 具有屏蔽栅的沟槽栅器件的制造方法 |
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-
1985
- 1985-10-21 US US06/789,675 patent/US4649625A/en not_active Expired - Lifetime
-
1986
- 1986-07-28 IN IN596/MAS/86A patent/IN167820B/en unknown
- 1986-08-20 JP JP61193010A patent/JPH06101546B2/ja not_active Expired - Lifetime
- 1986-08-22 EP EP86111645A patent/EP0220410B1/en not_active Expired - Lifetime
- 1986-08-22 DE DE86111645T patent/DE3688231T2/de not_active Expired - Fee Related
- 1986-08-30 KR KR1019860007237A patent/KR900002885B1/ko not_active IP Right Cessation
- 1986-09-01 ZA ZA866625A patent/ZA866625B/xx unknown
- 1986-09-09 CN CN86105868.2A patent/CN1005883B/zh not_active Expired
- 1986-09-11 CA CA000518033A patent/CA1232362A/en not_active Expired
- 1986-09-23 AU AU63071/86A patent/AU575499B2/en not_active Ceased
- 1986-09-23 BR BR8604546A patent/BR8604546A/pt not_active IP Right Cessation
- 1986-10-15 ES ES8602599A patent/ES2003376A6/es not_active Expired
-
1993
- 1993-09-02 HK HK909/93A patent/HK90993A/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
EP0220410A2 (en) | 1987-05-06 |
BR8604546A (pt) | 1987-05-26 |
JPS6298766A (ja) | 1987-05-08 |
EP0220410A3 (en) | 1989-05-10 |
CN1005883B (zh) | 1989-11-22 |
KR870004513A (ko) | 1987-05-11 |
IN167820B (ko) | 1990-12-22 |
JPH06101546B2 (ja) | 1994-12-12 |
ZA866625B (en) | 1987-06-24 |
DE3688231D1 (de) | 1993-05-13 |
AU575499B2 (en) | 1988-07-28 |
US4649625A (en) | 1987-03-17 |
KR900002885B1 (ko) | 1990-05-01 |
AU6307186A (en) | 1987-04-30 |
ES2003376A6 (es) | 1988-11-01 |
DE3688231T2 (de) | 1993-11-04 |
CA1232362A (en) | 1988-02-02 |
EP0220410B1 (en) | 1993-04-07 |
CN86105868A (zh) | 1987-06-10 |
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