HK28297A - Differential sense amplifier - Google Patents
Differential sense amplifierInfo
- Publication number
- HK28297A HK28297A HK28297A HK28297A HK28297A HK 28297 A HK28297 A HK 28297A HK 28297 A HK28297 A HK 28297A HK 28297 A HK28297 A HK 28297A HK 28297 A HK28297 A HK 28297A
- Authority
- HK
- Hong Kong
- Prior art keywords
- sense amplifier
- differential sense
- differential
- amplifier
- sense
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
- H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
- H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
- H03K3/356—Bistable circuits
- H03K3/356104—Bistable circuits using complementary field-effect transistors
- H03K3/356113—Bistable circuits using complementary field-effect transistors using additional transistors in the input circuit
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/065—Differential amplifiers of latching type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2207/00—Indexing scheme relating to arrangements for writing information into, or reading information out from, a digital store
- G11C2207/06—Sense amplifier related aspects
- G11C2207/063—Current sense amplifiers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Amplifiers (AREA)
- Dram (AREA)
- Manipulation Of Pulses (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019900020393A KR920013458A (ko) | 1990-12-12 | 1990-12-12 | 차동감지 증폭회로 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| HK28297A true HK28297A (en) | 1997-03-21 |
Family
ID=19307388
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| HK28297A HK28297A (en) | 1990-12-12 | 1997-03-13 | Differential sense amplifier |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5162681A (de) |
| JP (1) | JPH06302192A (de) |
| KR (1) | KR920013458A (de) |
| CN (1) | CN1023531C (de) |
| DE (1) | DE4105268C2 (de) |
| FR (1) | FR2670632B1 (de) |
| GB (1) | GB2250842B (de) |
| HK (1) | HK28297A (de) |
| IT (1) | IT1244933B (de) |
| NL (1) | NL192646C (de) |
| RU (1) | RU2119243C1 (de) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR950014256B1 (ko) * | 1993-04-06 | 1995-11-23 | 삼성전자주식회사 | 낮은 전원전압을 사용하는 반도체 메모리장치 |
| KR960009956B1 (ko) * | 1994-02-16 | 1996-07-25 | 현대전자산업 주식회사 | 반도체 소자의 감지 증폭기 |
| US5438287A (en) * | 1994-06-01 | 1995-08-01 | United Memories Inc. | High speed differential current sense amplifier with positive feedback |
| US5585747A (en) * | 1994-10-11 | 1996-12-17 | Townsend & Townsend & Crew Llp | High speed low power sense amplifier |
| US5546026A (en) * | 1995-03-01 | 1996-08-13 | Cirrus Logic, Inc. | Low-voltage high-performance dual-feedback dynamic sense amplifier |
| KR0164385B1 (ko) * | 1995-05-20 | 1999-02-18 | 김광호 | 센스앰프회로 |
| US5859548A (en) * | 1996-07-24 | 1999-01-12 | Lg Semicon Co., Ltd. | Charge recycling differential logic (CRDL) circuit and devices using the same |
| US5903169A (en) * | 1996-07-24 | 1999-05-11 | Lg Semicon Co., Ltd. | Charge recycling differential logic (CRDL) circuit and storage elements and devices using the same |
| US6037890A (en) * | 1997-09-30 | 2000-03-14 | Intel Corporation | Ultra high speed, low power, flash A/D converter utilizing a current mode regenerative comparator |
| KR100272163B1 (ko) * | 1997-12-30 | 2000-11-15 | 윤종용 | 대기용어레이전압발생기를갖는반도체메모리장치 |
| DE69931121T8 (de) * | 1998-10-23 | 2007-05-03 | Nippon Telegraph And Telephone Corp. | Spannungsvergleicher |
| US6169424B1 (en) * | 1998-11-03 | 2001-01-02 | Intel Corporation | Self-biasing sense amplifier |
| JP4030213B2 (ja) * | 1999-02-22 | 2008-01-09 | 株式会社ルネサステクノロジ | 半導体回路装置 |
| US6741104B2 (en) * | 1999-05-26 | 2004-05-25 | Micron Technology, Inc. | DRAM sense amplifier for low voltages |
| US6259643B1 (en) * | 1999-05-28 | 2001-07-10 | Systems Integration Inc. | Single event upset (SEU) hardened static random access memory cell |
| KR100299522B1 (ko) | 1999-06-28 | 2001-11-01 | 박종섭 | 고속 센스 증폭기 |
| US6791370B1 (en) * | 1999-07-16 | 2004-09-14 | Micron Technology, Inc. | Apparatus and method for adjusting clock skew |
| JP3813400B2 (ja) * | 1999-11-29 | 2006-08-23 | 富士通株式会社 | 半導体記憶装置 |
| US6744653B1 (en) * | 2001-10-04 | 2004-06-01 | Xiaohua Huang | CAM cells and differential sense circuits for content addressable memory (CAM) |
| US6501697B1 (en) * | 2001-10-11 | 2002-12-31 | Hewlett-Packard Company | High density memory sense amplifier |
| US6768348B2 (en) * | 2001-11-30 | 2004-07-27 | Semiconductor Energy Laboratory Co., Ltd. | Sense amplifier and electronic apparatus using the same |
| DE10219649C1 (de) * | 2002-05-02 | 2003-11-27 | Infineon Technologies Ag | Differentielle Strombewerterschaltung und Leseverstärkerschaltung zum Bewerten eines Speicherzustands einer SRAM-Halbleiterspeicherzelle |
| JP4736313B2 (ja) * | 2002-09-10 | 2011-07-27 | 日本電気株式会社 | 薄膜半導体装置 |
| KR100577566B1 (ko) * | 2004-12-28 | 2006-05-08 | 삼성전자주식회사 | 입력버퍼회로 |
| US7813201B2 (en) * | 2008-07-08 | 2010-10-12 | Atmel Corporation | Differential sense amplifier |
| CN102457263A (zh) * | 2010-11-01 | 2012-05-16 | 天钰科技股份有限公司 | 改良位准移位器的电路及方法 |
| JP5838650B2 (ja) * | 2011-08-16 | 2016-01-06 | 株式会社ソシオネクスト | 出力回路 |
| CN103166576B (zh) * | 2011-12-16 | 2016-05-18 | 中国科学院微电子研究所 | 一种抗单粒子翻转的Latch型灵敏放大器 |
| US9343146B2 (en) * | 2012-01-10 | 2016-05-17 | Micron Technology, Inc. | Apparatuses and methods for low power current mode sense amplification |
| US8829942B2 (en) * | 2012-11-13 | 2014-09-09 | University Of Macau | Comparator and calibration thereof |
| US9356408B1 (en) * | 2013-01-15 | 2016-05-31 | Amazon Technologies, Inc. | Extensible ports for electronic devices |
| US9577637B2 (en) * | 2014-02-19 | 2017-02-21 | Altera Corporation | Stability-enhanced physically unclonable function circuitry |
| US9373388B1 (en) * | 2015-04-29 | 2016-06-21 | Qualcomm Incorporated | Sense amplifier with pulsed control for pull-up transistors |
| US10230361B2 (en) * | 2015-08-28 | 2019-03-12 | Perceptia Devices Australia Pty Ltd | High-speed clocked comparators |
| RU2679970C1 (ru) * | 2018-06-07 | 2019-02-14 | федеральное государственное бюджетное образовательное учреждение высшего образования "Донской государственный технический университет" (ДГТУ) | Дифференциальный усилитель на комплементарных полевых транзисторах с управляемым напряжением ограничения проходной характеристики |
| US20200244256A1 (en) * | 2019-01-29 | 2020-07-30 | Julian Jenkins | Low-Power Sense Amplifier |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4103345A (en) * | 1975-04-28 | 1978-07-25 | Tokyo Shibaura Electric Co., Ltd. | Semiconductor memory with data detection circuit |
| US4247791A (en) * | 1978-04-03 | 1981-01-27 | Rockwell International Corporation | CMOS Memory sense amplifier |
| JPS5589982A (en) * | 1978-12-27 | 1980-07-08 | Hitachi Ltd | Output circuitry |
| JPS5616992A (en) * | 1979-07-20 | 1981-02-18 | Hitachi Ltd | Signal readout circuit |
| JPS58100291A (ja) * | 1981-12-09 | 1983-06-14 | Ricoh Co Ltd | センスアンプ回路 |
| JPS58100292A (ja) * | 1981-12-09 | 1983-06-14 | Ricoh Co Ltd | センスアンプ |
| JPS6010495A (ja) * | 1983-06-30 | 1985-01-19 | Fujitsu Ltd | センスアンプ |
| JPS61224192A (ja) * | 1985-03-29 | 1986-10-04 | Sony Corp | 読出し増幅器 |
| JPS6246489A (ja) * | 1985-08-23 | 1987-02-28 | Nippon Texas Instr Kk | ダイナミツク型差動増幅器 |
| JPS62192997A (ja) * | 1986-02-20 | 1987-08-24 | Toshiba Corp | カレントミラ−型センスアンプ |
| FR2603414B1 (fr) * | 1986-08-29 | 1988-10-28 | Bull Sa | Amplificateur de lecture |
| CA1260080A (en) * | 1986-09-10 | 1989-09-26 | Akira Yukawa | Operational amplifier circuit having wide operating range |
| JPH01105389A (ja) * | 1987-10-19 | 1989-04-21 | Hitachi Ltd | データラッチ回路 |
| KR0141494B1 (ko) * | 1988-01-28 | 1998-07-15 | 미다 가쓰시게 | 레벨시프트회로를 사용한 고속센스 방식의 반도체장치 |
| US5053652A (en) * | 1988-01-28 | 1991-10-01 | Hitachi, Ltd. | High speed sensor system using a level shift circuit |
| JPH0246595A (ja) * | 1988-08-09 | 1990-02-15 | Matsushita Electric Ind Co Ltd | センスアンプ |
| KR910008101B1 (ko) * | 1988-12-30 | 1991-10-07 | 삼성전자 주식회사 | 반도체 메모리 소자의 피드백형 데이타 출력 회로 |
| US5017815A (en) * | 1989-12-20 | 1991-05-21 | At&T Bell Laboratories | Sense amplifier with selective pull up |
-
1990
- 1990-12-12 KR KR1019900020393A patent/KR920013458A/ko not_active Application Discontinuation
-
1991
- 1991-01-18 US US07/642,872 patent/US5162681A/en not_active Expired - Lifetime
- 1991-01-30 FR FR9101047A patent/FR2670632B1/fr not_active Expired - Fee Related
- 1991-01-31 NL NL9100170A patent/NL192646C/nl not_active IP Right Cessation
- 1991-02-20 DE DE4105268A patent/DE4105268C2/de not_active Expired - Fee Related
- 1991-02-27 RU SU4894619A patent/RU2119243C1/ru not_active IP Right Cessation
- 1991-02-27 GB GB9104169A patent/GB2250842B/en not_active Expired - Fee Related
- 1991-02-27 IT ITRM910136A patent/IT1244933B/it active IP Right Grant
- 1991-02-28 CN CN91101326A patent/CN1023531C/zh not_active Expired - Fee Related
- 1991-02-28 JP JP3034128A patent/JPH06302192A/ja active Pending
-
1997
- 1997-03-13 HK HK28297A patent/HK28297A/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JPH06302192A (ja) | 1994-10-28 |
| CN1023531C (zh) | 1994-01-12 |
| ITRM910136A0 (it) | 1991-02-27 |
| FR2670632A1 (fr) | 1992-06-19 |
| NL192646C (nl) | 1997-11-04 |
| IT1244933B (it) | 1994-09-13 |
| KR920013458A (ko) | 1992-07-29 |
| US5162681A (en) | 1992-11-10 |
| NL192646B (nl) | 1997-07-01 |
| ITRM910136A1 (it) | 1992-08-27 |
| GB2250842B (en) | 1995-06-21 |
| DE4105268A1 (de) | 1992-06-17 |
| CN1062246A (zh) | 1992-06-24 |
| NL9100170A (nl) | 1992-07-01 |
| FR2670632B1 (fr) | 1997-11-07 |
| GB9104169D0 (en) | 1991-04-17 |
| RU2119243C1 (ru) | 1998-09-20 |
| GB2250842A (en) | 1992-06-17 |
| DE4105268C2 (de) | 1995-03-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PF | Patent in force | ||
| PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20090227 |