HK1222260A1 - 引線接合傳感器封裝及方法 - Google Patents

引線接合傳感器封裝及方法

Info

Publication number
HK1222260A1
HK1222260A1 HK16110376.5A HK16110376A HK1222260A1 HK 1222260 A1 HK1222260 A1 HK 1222260A1 HK 16110376 A HK16110376 A HK 16110376A HK 1222260 A1 HK1222260 A1 HK 1222260A1
Authority
HK
Hong Kong
Prior art keywords
wire bond
sensor package
bond sensor
package
wire
Prior art date
Application number
HK16110376.5A
Other languages
English (en)
Inventor
Oganesian Vage
Lu Zhenhua
Original Assignee
Optiz Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Optiz Inc filed Critical Optiz Inc
Publication of HK1222260A1 publication Critical patent/HK1222260A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14636—Interconnect structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05554—Shape in top view being square
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/4824—Connecting between the body and an opposite side of the item with respect to the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73215—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/1015—Shape
    • H01L2924/10155—Shape being other than a cuboid
    • H01L2924/10156—Shape being other than a cuboid at the periphery
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Manufacturing & Machinery (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
  • Light Receiving Elements (AREA)
HK16110376.5A 2014-08-18 2016-09-01 引線接合傳感器封裝及方法 HK1222260A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462038429P 2014-08-18 2014-08-18
US14/809,921 US9666730B2 (en) 2014-08-18 2015-07-27 Wire bond sensor package

Publications (1)

Publication Number Publication Date
HK1222260A1 true HK1222260A1 (zh) 2017-06-23

Family

ID=55302772

Family Applications (1)

Application Number Title Priority Date Filing Date
HK16110376.5A HK1222260A1 (zh) 2014-08-18 2016-09-01 引線接合傳感器封裝及方法

Country Status (6)

Country Link
US (2) US9666730B2 (zh)
JP (1) JP2016054289A (zh)
KR (1) KR101837808B1 (zh)
CN (1) CN105374839B (zh)
HK (1) HK1222260A1 (zh)
TW (1) TWI569341B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016178222A (ja) * 2015-03-20 2016-10-06 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9760754B2 (en) * 2015-07-06 2017-09-12 Sunasic Technologies Inc. Printed circuit board assembly forming enhanced fingerprint module
TWI588756B (zh) * 2015-09-25 2017-06-21 茂丞科技股份有限公司 指紋感測封裝模組及其製造方法
KR20170082358A (ko) * 2016-01-06 2017-07-14 하나 마이크론(주) 스마트 기기의 트랙패드 반도체 패키지 및 그 제조 방법
WO2017204777A1 (en) * 2016-05-23 2017-11-30 Apple Inc. Electronic device including pin hole array mask above optical image sensor and laterally adjacent light source and related methods
WO2017204776A1 (en) 2016-05-23 2017-11-30 Quostagni Research Llc Electronic device including processing circuitry for sensing images from spaced apart sub-arrays and related methods
CN107437046B (zh) * 2016-05-25 2020-12-01 讯芯电子科技（中山）有限公司 指纹传感器封装结构及其制作方法
TWI622937B (zh) * 2016-06-22 2018-05-01 致伸科技股份有限公司 電容式指紋辨識模組
US20190339478A1 (en) * 2016-07-05 2019-11-07 Sharp Kabushiki Kaisha Optical device
US20180114786A1 (en) * 2016-10-21 2018-04-26 Powertech Technology Inc. Method of forming package-on-package structure
US9996725B2 (en) * 2016-11-03 2018-06-12 Optiz, Inc. Under screen sensor assembly
CN106653616A (zh) * 2016-11-22 2017-05-10 苏州晶方半导体科技股份有限公司 指纹传感芯片的封装方法以及封装结构
EP3346296B1 (en) * 2017-01-10 2021-10-27 Oxford Instruments Technologies Oy A semiconductor radiation detector
EP3534292A4 (en) * 2017-11-09 2020-07-22 Shenzhen Goodix Technology Co., Ltd. OPTICAL MODULE AND PROCESSING METHOD THEREFOR AND TERMINAL DEVICE
WO2020098211A1 (zh) * 2018-11-12 2020-05-22 通富微电子股份有限公司 一种半导体芯片封装方法及半导体封装器件
WO2020098214A1 (zh) * 2018-11-12 2020-05-22 通富微电子股份有限公司 一种半导体芯片封装方法及半导体封装器件
JP2020088066A (ja) * 2018-11-20 2020-06-04 キヤノン株式会社 電子部品および機器
CN110770746B (zh) * 2019-05-29 2021-06-11 深圳市汇顶科技股份有限公司 指纹识别装置和电子设备
US11747273B2 (en) * 2020-09-28 2023-09-05 Asahi Kasei Microdevices Corporation Gas sensor
US12015098B2 (en) * 2020-12-25 2024-06-18 Asahi Kasei Microdevices Corporation Photodetection apparatus

Family Cites Families (104)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0216670A (ja) 1988-07-05 1990-01-19 Fanuc Ltd マルチプロセッサシステム
JPH0216670U (zh) * 1988-07-19 1990-02-02
JPH0514815A (ja) * 1991-07-04 1993-01-22 Fujitsu Ltd 固体撮像装置および該固体撮像装置の製造方法
JP3181503B2 (ja) 1995-11-27 2001-07-03 富士写真光機株式会社 電子内視鏡の撮像素子組付け体
JPH09199701A (ja) * 1996-01-16 1997-07-31 Olympus Optical Co Ltd 固体撮像装置
IL123207A0 (en) 1998-02-06 1998-09-24 Shellcase Ltd Integrated circuit device
KR100377472B1 (ko) * 1999-12-10 2003-03-26 앰코 테크놀로지 코리아 주식회사 반도체패키지 및 그 제조방법
IL133453A0 (en) 1999-12-10 2001-04-30 Shellcase Ltd Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
US6661084B1 (en) 2000-05-16 2003-12-09 Sandia Corporation Single level microelectronic device package with an integral window
JP3906654B2 (ja) * 2000-07-18 2007-04-18 ソニー株式会社 半導体発光素子及び半導体発光装置
EP1357606A1 (en) 2002-04-22 2003-10-29 Scientek Corporation Image sensor semiconductor package
WO2003105226A1 (ja) * 2002-06-05 2003-12-18 株式会社 ルネサステクノロジ 半導体装置
KR100472462B1 (ko) 2002-07-12 2005-03-08 삼성전자주식회사 잉크젯 카트리지의 프린트헤드용 캐핑 장치
AU2003272405A1 (en) 2002-09-17 2004-04-08 Chippac, Inc. Semiconductor multi-package module having wire bond interconnection between stacked packages
US7038288B2 (en) * 2002-09-25 2006-05-02 Microsemi Corporation Front side illuminated photodiode with backside bump
US7033664B2 (en) 2002-10-22 2006-04-25 Tessera Technologies Hungary Kft Methods for producing packaged integrated circuit devices and packaged integrated circuit devices produced thereby
JP2004165191A (ja) 2002-11-08 2004-06-10 Oki Electric Ind Co Ltd 半導体装置、半導体装置の製造方法及びカメラシステム
JP3729817B2 (ja) 2003-04-28 2005-12-21 松下電器産業株式会社 固体撮像装置の製造方法
JP4130158B2 (ja) * 2003-06-09 2008-08-06 三洋電機株式会社 半導体装置の製造方法、半導体装置
JP2004363400A (ja) 2003-06-05 2004-12-24 Sanyo Electric Co Ltd 半導体装置およびその製造方法
US6972480B2 (en) 2003-06-16 2005-12-06 Shellcase Ltd. Methods and apparatus for packaging integrated circuit devices
CN100587962C (zh) 2003-07-03 2010-02-03 泰塞拉技术匈牙利公司 用于封装集成电路器件的方法和设备
US6864116B1 (en) 2003-10-01 2005-03-08 Optopac, Inc. Electronic package of photo-sensing semiconductor devices, and the fabrication and assembly thereof
KR100673950B1 (ko) 2004-02-20 2007-01-24 삼성테크윈 주식회사 이미지 센서 모듈과 이를 구비하는 카메라 모듈 패키지
JP2005244116A (ja) * 2004-02-27 2005-09-08 Toshiba Corp 半導体装置の製造方法
US20090026567A1 (en) 2004-07-28 2009-01-29 Industrial Technology Research Institute Image sensor package structure and method for fabricating the same
US20060073635A1 (en) 2004-09-28 2006-04-06 Chao-Yuan Su Three dimensional package type stacking for thinner package application
US8237256B2 (en) * 2004-12-10 2012-08-07 Ipdia Integrated package
JP4889974B2 (ja) 2005-08-01 2012-03-07 新光電気工業株式会社 電子部品実装構造体及びその製造方法
KR200406394Y1 (ko) * 2005-10-27 2006-01-20 킹팍 테크놀로지 인코포레이티드 화합물 구조를 포함하는 이미지 센서
US7723146B2 (en) 2006-01-04 2010-05-25 Stats Chippac Ltd. Integrated circuit package system with image sensor system
US7936062B2 (en) 2006-01-23 2011-05-03 Tessera Technologies Ireland Limited Wafer level chip packaging
US20070190747A1 (en) 2006-01-23 2007-08-16 Tessera Technologies Hungary Kft. Wafer level packaging to lidded chips
KR100691398B1 (ko) 2006-03-14 2007-03-12 삼성전자주식회사 미소소자 패키지 및 그 제조방법
KR100770690B1 (ko) 2006-03-15 2007-10-29 삼성전기주식회사 카메라모듈 패키지
KR100775136B1 (ko) 2006-04-19 2007-11-08 삼성전기주식회사 이미지센서 모듈용 웨이퍼 레벨 칩 스케일 패키지 및 이의제조방법 및 칩 스케일 패키지를 이용한 카메라 모듈
JP2007329813A (ja) * 2006-06-09 2007-12-20 Sony Corp 固体撮像装置及びこの固体撮像装置を備えた撮像装置
US7816769B2 (en) * 2006-08-28 2010-10-19 Atmel Corporation Stackable packages for three-dimensional packaging of semiconductor dice
JP4467551B2 (ja) * 2006-09-22 2010-05-26 Ｏｋｉセミコンダクタ株式会社 半導体装置
US7829438B2 (en) 2006-10-10 2010-11-09 Tessera, Inc. Edge connect wafer level stacking
US7901989B2 (en) 2006-10-10 2011-03-08 Tessera, Inc. Reconstituted wafer level stacking
US8513789B2 (en) 2006-10-10 2013-08-20 Tessera, Inc. Edge connect wafer level stacking with leads extending along edges
US7807508B2 (en) 2006-10-31 2010-10-05 Tessera Technologies Hungary Kft. Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
US7935568B2 (en) 2006-10-31 2011-05-03 Tessera Technologies Ireland Limited Wafer-level fabrication of lidded chips with electrodeposited dielectric coating
US8569876B2 (en) 2006-11-22 2013-10-29 Tessera, Inc. Packaged semiconductor chips with array
US7791199B2 (en) 2006-11-22 2010-09-07 Tessera, Inc. Packaged semiconductor chips
US7749886B2 (en) 2006-12-20 2010-07-06 Tessera, Inc. Microelectronic assemblies having compliancy and methods therefor
US7569409B2 (en) 2007-01-04 2009-08-04 Visera Technologies Company Limited Isolation structures for CMOS image sensor chip scale packages
TWI341025B (en) 2007-02-02 2011-04-21 Siliconware Precision Industries Co Ltd Sensor semiconductor package and method for fabricating the same
JP5584474B2 (ja) 2007-03-05 2014-09-03 インヴェンサス・コーポレイション 貫通ビアによって前面接点に接続された後面接点を有するチップ
CN100546026C (zh) 2007-04-29 2009-09-30 鸿富锦精密工业（深圳）有限公司 影像摄取装置
EP2213148A4 (en) 2007-10-10 2011-09-07 Tessera Inc ROBUST MULTILAYER WIRING ELEMENTS AND ASSEMBLIES INCLUDING MICROELECTRONIC ELEMENTS INCLUDED
US20090127686A1 (en) * 2007-11-21 2009-05-21 Advanced Chip Engineering Technology Inc. Stacking die package structure for semiconductor devices and method of the same
US8049320B2 (en) * 2008-02-19 2011-11-01 Texas Instruments Incorporated Integrated circuit stacked package precursors and stacked packaged devices and systems therefrom
US20090212381A1 (en) 2008-02-26 2009-08-27 Tessera, Inc. Wafer level packages for rear-face illuminated solid state image sensors
US20100053407A1 (en) 2008-02-26 2010-03-04 Tessera, Inc. Wafer level compliant packages for rear-face illuminated solid state image sensors
JP5078725B2 (ja) * 2008-04-22 2012-11-21 ラピスセミコンダクタ株式会社 半導体装置
US7859033B2 (en) 2008-07-09 2010-12-28 Eastman Kodak Company Wafer level processing for backside illuminated sensors
KR101465161B1 (ko) * 2008-09-04 2014-11-25 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US8253231B2 (en) * 2008-09-23 2012-08-28 Marvell International Ltd. Stacked integrated circuit package using a window substrate
US8232633B2 (en) 2008-09-25 2012-07-31 King Dragon International Inc. Image sensor package with dual substrates and the method of the same
JP5438980B2 (ja) * 2009-01-23 2014-03-12 ラピスセミコンダクタ株式会社 半導体装置の製造方法
US8193555B2 (en) 2009-02-11 2012-06-05 Megica Corporation Image and light sensor chip packages
JP2010219425A (ja) 2009-03-18 2010-09-30 Toshiba Corp 半導体装置
JP2010238995A (ja) 2009-03-31 2010-10-21 Sanyo Electric Co Ltd 半導体モジュールおよびこれを搭載したカメラモジュール
KR101580925B1 (ko) * 2009-04-28 2015-12-30 삼성전자주식회사 칩온 보드 타입의 패키지
US9196980B2 (en) * 2009-06-02 2015-11-24 Hsio Technologies, Llc High performance surface mount electrical interconnect with external biased normal force loading
US8987886B2 (en) * 2009-06-02 2015-03-24 Hsio Technologies, Llc Copper pillar full metal via electrical circuit structure
US8912646B2 (en) * 2009-07-15 2014-12-16 Silanna Semiconductor U.S.A., Inc. Integrated circuit assembly and method of making
KR101711007B1 (ko) 2010-04-29 2017-03-02 삼성전자주식회사 이미지 센서 패키지를 갖는 이미지 센서 모듈
US8598695B2 (en) 2010-07-23 2013-12-03 Tessera, Inc. Active chip on carrier or laminated chip having microelectronic element embedded therein
US8697569B2 (en) 2010-07-23 2014-04-15 Tessera, Inc. Non-lithographic formation of three-dimensional conductive elements
US8796135B2 (en) 2010-07-23 2014-08-05 Tessera, Inc. Microelectronic elements with rear contacts connected with via first or via middle structures
US8791575B2 (en) 2010-07-23 2014-07-29 Tessera, Inc. Microelectronic elements having metallic pads overlying vias
US8847376B2 (en) 2010-07-23 2014-09-30 Tessera, Inc. Microelectronic elements with post-assembly planarization
US9640437B2 (en) 2010-07-23 2017-05-02 Tessera, Inc. Methods of forming semiconductor elements using micro-abrasive particle stream
JP5682185B2 (ja) 2010-09-07 2015-03-11 ソニー株式会社 半導体パッケージおよび半導体パッケージの製造方法ならびに光学モジュール
US8685793B2 (en) 2010-09-16 2014-04-01 Tessera, Inc. Chip assembly having via interconnects joined by plating
US8686565B2 (en) 2010-09-16 2014-04-01 Tessera, Inc. Stacked chip assembly having vertical vias
US8847380B2 (en) 2010-09-17 2014-09-30 Tessera, Inc. Staged via formation from both sides of chip
US8610259B2 (en) 2010-09-17 2013-12-17 Tessera, Inc. Multi-function and shielded 3D interconnects
JP5611862B2 (ja) * 2011-03-04 2014-10-22 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US8546951B2 (en) 2011-06-09 2013-10-01 Optiz, Inc. 3D integration microelectronic assembly for integrated circuit devices
US8546900B2 (en) 2011-06-09 2013-10-01 Optiz, Inc. 3D integration microelectronic assembly for integrated circuit devices
US8552518B2 (en) 2011-06-09 2013-10-08 Optiz, Inc. 3D integrated microelectronic assembly with stress reducing interconnects
US8604576B2 (en) 2011-07-19 2013-12-10 Opitz, Inc. Low stress cavity package for back side illuminated image sensor, and method of making same
US9018725B2 (en) 2011-09-02 2015-04-28 Optiz, Inc. Stepped package for image sensor and method of making same
KR101142347B1 (ko) 2011-09-09 2012-07-06 옵토팩 주식회사 포토센서 패키지 모듈 및 제작 방법
US8796800B2 (en) 2011-11-21 2014-08-05 Optiz, Inc. Interposer package for CMOS image sensor and method of making same
US8432011B1 (en) 2011-12-06 2013-04-30 Optiz, Inc. Wire bond interposer package for CMOS image sensor and method of making same
US20130168791A1 (en) 2012-01-04 2013-07-04 Vage Oganesian Quantum Efficiency Back Side Illuminated CMOS Image Sensor And Package, And Method Of Making Same
US8570669B2 (en) 2012-01-23 2013-10-29 Optiz, Inc Multi-layer polymer lens and method of making same
WO2013134159A2 (en) 2012-03-06 2013-09-12 Apple Inc. Sapphire laminates
US8692344B2 (en) 2012-03-16 2014-04-08 Optiz, Inc Back side illuminated image sensor architecture, and method of making same
US20130249031A1 (en) 2012-03-22 2013-09-26 Vage Oganesian Quantum Efficiency Back Side Illuminated CMOS Image Sensor And Package, And Method Of Making Same
US8736080B2 (en) * 2012-04-30 2014-05-27 Apple Inc. Sensor array package
US9233511B2 (en) 2012-05-10 2016-01-12 Optiz, Inc. Method of making stamped multi-layer polymer lens
US8921759B2 (en) * 2012-07-26 2014-12-30 Optiz, Inc. Integrated image sensor package with liquid crystal lens
US8642393B1 (en) * 2012-08-08 2014-02-04 Taiwan Semiconductor Manufacturing Company, Ltd. Package on package devices and methods of forming same
US8759930B2 (en) 2012-09-10 2014-06-24 Optiz, Inc. Low profile image sensor package
US9190443B2 (en) 2013-03-12 2015-11-17 Optiz Inc. Low profile image sensor
US8921901B1 (en) * 2013-06-10 2014-12-30 United Microelectronics Corp. Stacked CMOS image sensor and signal processor wafer structure
KR102190390B1 (ko) * 2013-11-07 2020-12-11 삼성전자주식회사 반도체 패키지 및 이의 제조 방법
US9806051B2 (en) * 2014-03-04 2017-10-31 General Electric Company Ultra-thin embedded semiconductor device package and method of manufacturing thereof

Also Published As

Publication number Publication date
US9893213B2 (en) 2018-02-13
US9666730B2 (en) 2017-05-30
JP2016054289A (ja) 2016-04-14
US20170222065A1 (en) 2017-08-03
TWI569341B (zh) 2017-02-01
KR101837808B1 (ko) 2018-03-12
KR20160021725A (ko) 2016-02-26
CN105374839B (zh) 2018-11-09
CN105374839A (zh) 2016-03-02
TW201614747A (en) 2016-04-16
US20160049526A1 (en) 2016-02-18

Similar Documents

Publication Publication Date Title
HK1222260A1 (zh) 引線接合傳感器封裝及方法
SG11201609249XA (en) Bonding apparatus and bonding method
SG11201608819VA (en) Bonding wire for semiconductor device
GB201406527D0 (en) Bonding method
HK1221204A1 (zh) 包裝體及其製造方法
GB201610993D0 (en) Sensor device and method
TWI560828B (en) Chip package and method for forming the same
SG11201704914QA (en) Bonding wire for semiconductor device
SG10201408586XA (en) Corrosion and moisture resistant bonding wire
SG11201710074TA (en) Wire bonding apparatus and wire bonding method
GB201514221D0 (en) Bonding method
HK1243040A1 (zh) 底部帶有撐板的包裝和熱封方法
EP3181339A4 (en) Bonding device and bonding method
SG11201601519YA (en) Bonding wire for semiconductor device
SG11201606765WA (en) Wire bonding apparatus and semiconductor device manufacturing method
SG11201509513SA (en) Bonding wire for semiconductor device use and method of production of same
TWI560829B (en) Chip package and method thereof
PL3050814T3 (pl) Urządzenie pakujące i sposób jego działania
HUE050434T2 (hu) Kötõanyag és azt alkalmazó kötõeljárás
SG11201607123YA (en) Bonding device and bonding method
SG11201608267TA (en) Bonding device
SG11201710208TA (en) Wire measurement device and method
TWI562311B (en) Package structure and manufactruing method thereof
SG11201606865RA (en) Method for manufacturing semiconductor device, semiconductor device, and wire bonding device
GB201407477D0 (en) Infrared sensor package