HK1198601A1 - 半導體發光器件及其製造方法 - Google Patents
半導體發光器件及其製造方法Info
- Publication number
- HK1198601A1 HK1198601A1 HK14112073A HK14112073A HK1198601A1 HK 1198601 A1 HK1198601 A1 HK 1198601A1 HK 14112073 A HK14112073 A HK 14112073A HK 14112073 A HK14112073 A HK 14112073A HK 1198601 A1 HK1198601 A1 HK 1198601A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- light emitting
- emitting device
- semiconductor light
- manufacturing same
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
- H01L24/19—Manufacturing methods of high density interconnect preforms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B45/00—Circuit arrangements for operating light-emitting diodes [LED]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011203855A JP2013065726A (ja) | 2011-09-16 | 2011-09-16 | 半導体発光装置及びその製造方法 |
PCT/JP2012/001803 WO2013038579A1 (en) | 2011-09-16 | 2012-03-14 | Semiconductor light emitting device and method for manufacturing same |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1198601A1 true HK1198601A1 (zh) | 2015-04-30 |
Family
ID=45955059
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK14112073A HK1198601A1 (zh) | 2011-09-16 | 2014-12-01 | 半導體發光器件及其製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US9257416B2 (zh) |
EP (1) | EP2748871A1 (zh) |
JP (1) | JP2013065726A (zh) |
CN (1) | CN103782401A (zh) |
HK (1) | HK1198601A1 (zh) |
TW (1) | TWI515927B (zh) |
WO (1) | WO2013038579A1 (zh) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013084889A (ja) * | 2011-09-30 | 2013-05-09 | Toshiba Corp | 半導体発光装置及びその製造方法 |
RU2665121C2 (ru) * | 2013-05-03 | 2018-08-28 | Филипс Лайтинг Холдинг Б.В. | Источник света с настроенным спектральным распределением |
DE102013106519A1 (de) * | 2013-06-21 | 2014-12-24 | Osram Opto Semiconductors Gmbh | Anordnung zur Erzeugung von Mischlicht und Verfahren zum Betrieb einer Anordnung von Mischlicht |
JP2015050270A (ja) * | 2013-08-30 | 2015-03-16 | 株式会社東芝 | 半導体発光装置 |
JP6219177B2 (ja) | 2014-01-17 | 2017-10-25 | スタンレー電気株式会社 | 半導体発光装置 |
JP6274943B2 (ja) * | 2014-03-27 | 2018-02-07 | 新日本無線株式会社 | Ledモジュールおよびその製造方法 |
TWI790912B (zh) * | 2014-07-03 | 2023-01-21 | 晶元光電股份有限公司 | 光電元件 |
JP6527695B2 (ja) | 2014-12-22 | 2019-06-05 | スタンレー電気株式会社 | 半導体発光装置 |
JP2016146389A (ja) * | 2015-02-06 | 2016-08-12 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
FR3038452A1 (fr) * | 2015-06-30 | 2017-01-06 | Commissariat Energie Atomique | Dispositif electroluminescent a semiconducteur comportant une couche photoluminescente structuree |
JP6667237B2 (ja) * | 2015-09-11 | 2020-03-18 | アルパッド株式会社 | 発光装置 |
KR102555242B1 (ko) * | 2015-09-30 | 2023-07-17 | 삼성전자주식회사 | 발광소자 패키지 |
WO2017061127A1 (en) * | 2015-10-08 | 2017-04-13 | Nichia Corporation | Light-emitting device, integrated light-emitting device, and light-emitting module |
JP2017112295A (ja) * | 2015-12-18 | 2017-06-22 | 豊田合成株式会社 | 発光装置およびその製造方法 |
JP2018022844A (ja) | 2016-08-05 | 2018-02-08 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
KR102605585B1 (ko) * | 2016-08-11 | 2023-11-24 | 삼성전자주식회사 | 발광소자 패키지 제조방법 |
JP6652025B2 (ja) | 2016-09-29 | 2020-02-19 | 豊田合成株式会社 | 発光装置及びその製造方法 |
KR102650341B1 (ko) * | 2016-11-25 | 2024-03-22 | 엘지전자 주식회사 | 반도체 발광 소자를 이용한 디스플레이 장치 및 이의 제조방법 |
CN106684228B (zh) * | 2017-01-20 | 2019-12-17 | 安徽连达光电科技有限公司 | 一种在同一衬底上实现蓝绿光加红光荧光粉的发光led |
KR102317874B1 (ko) * | 2017-02-09 | 2021-10-28 | 삼성디스플레이 주식회사 | 표시 장치 및 이의 제조 방법 |
JP6645486B2 (ja) * | 2017-02-13 | 2020-02-14 | 日亜化学工業株式会社 | 発光装置およびその製造方法 |
US11177417B2 (en) | 2017-02-13 | 2021-11-16 | Nichia Corporation | Light emitting device including phosphor layer with protrusions and recesses and method for manufacturing same |
JP6917179B2 (ja) * | 2017-04-18 | 2021-08-11 | スタンレー電気株式会社 | 白色発光装置 |
JP6966691B2 (ja) | 2017-05-31 | 2021-11-17 | 日亜化学工業株式会社 | 発光装置及び発光装置の製造方法 |
TWI689092B (zh) * | 2017-06-09 | 2020-03-21 | 美商晶典有限公司 | 具有透光基材之微發光二極體顯示模組及其製造方法 |
JPWO2019009033A1 (ja) * | 2017-07-03 | 2020-03-19 | シャープ株式会社 | 光源装置及び発光装置 |
JP6974702B2 (ja) * | 2017-07-31 | 2021-12-01 | 日亜化学工業株式会社 | 半導体発光装置の製造方法 |
DE102017119872A1 (de) * | 2017-08-30 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil |
WO2019042564A1 (en) * | 2017-09-01 | 2019-03-07 | Osram Opto Semiconductors Gmbh | SURFACE MOUNTABLE OPTOELECTRONIC DEVICE AND METHOD FOR PRODUCING SURFACE MOUNT OPTOELECTRONIC DEVICE |
KR102486391B1 (ko) * | 2017-11-09 | 2023-01-09 | 삼성전자주식회사 | 고해상도 디스플레이 장치 |
KR102582424B1 (ko) | 2017-12-14 | 2023-09-25 | 삼성전자주식회사 | 발광소자 패키지 및 이를 이용한 디스플레이 장치 |
US11296262B2 (en) * | 2017-12-21 | 2022-04-05 | Lumileds Llc | Monolithic segmented LED array architecture with reduced area phosphor emission surface |
JP6835000B2 (ja) | 2018-01-31 | 2021-02-24 | 日亜化学工業株式会社 | 発光装置及び光源 |
KR102551354B1 (ko) * | 2018-04-20 | 2023-07-04 | 삼성전자 주식회사 | 반도체 발광 소자 및 그 제조 방법 |
DE102018114175A1 (de) * | 2018-06-13 | 2019-12-19 | Osram Opto Semiconductors Gmbh | Anordnung für ein Display und Verfahren |
EP3608959B1 (en) | 2018-08-06 | 2023-11-15 | Nichia Corporation | Light emitting device and method for manufacturing same |
JP2020053447A (ja) * | 2018-09-25 | 2020-04-02 | 日亜化学工業株式会社 | 発光モジュール |
JP7161100B2 (ja) * | 2018-09-25 | 2022-10-26 | 日亜化学工業株式会社 | 発光装置及びその製造方法 |
KR20200055862A (ko) | 2018-11-13 | 2020-05-22 | 삼성전자주식회사 | 발광 모듈 및 이를 포함하는 자동자 조명 장치 |
US11209129B2 (en) * | 2019-01-29 | 2021-12-28 | Xiamen Eco Lighting Co. Ltd. | Light apparatus |
DE102020103070A1 (de) * | 2020-02-06 | 2021-08-12 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur herstellung optoelektronischer bauelemente und optoelektronisches bauelement |
JP7119283B2 (ja) * | 2020-03-30 | 2022-08-17 | 日亜化学工業株式会社 | 発光装置の製造方法 |
US11804416B2 (en) * | 2020-09-08 | 2023-10-31 | UTAC Headquarters Pte. Ltd. | Semiconductor device and method of forming protective layer around cavity of semiconductor die |
Family Cites Families (46)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000244012A (ja) | 1998-12-22 | 2000-09-08 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体素子の製造方法 |
US6613455B1 (en) * | 1999-01-14 | 2003-09-02 | 3M Innovative Properties Company | Electroluminescent device and method for producing same |
JP3589187B2 (ja) | 2000-07-31 | 2004-11-17 | 日亜化学工業株式会社 | 発光装置の形成方法 |
JP4122738B2 (ja) * | 2001-07-26 | 2008-07-23 | 松下電工株式会社 | 発光装置の製造方法 |
US7202600B2 (en) * | 2004-03-02 | 2007-04-10 | World Properties, Inc. | Dimensionally stable electroluminescent lamp without substrate |
TWI286393B (en) * | 2004-03-24 | 2007-09-01 | Toshiba Lighting & Technology | Lighting apparatus |
CN100487931C (zh) | 2004-09-27 | 2009-05-13 | 松下电器产业株式会社 | 半导体发光元件及其制造方法和安装方法、发光器件 |
TW200644746A (en) * | 2005-05-12 | 2006-12-16 | Matsushita Electric Ind Co Ltd | Apparatus for forming phosphor layer and method for forming phosphor layer using the apparatus |
JP2009206246A (ja) * | 2008-02-27 | 2009-09-10 | Stanley Electric Co Ltd | 半導体発光装置 |
US8877524B2 (en) | 2008-03-31 | 2014-11-04 | Cree, Inc. | Emission tuning methods and devices fabricated utilizing methods |
JP5308773B2 (ja) | 2008-10-30 | 2013-10-09 | スタンレー電気株式会社 | 半導体発光装置 |
JP4799606B2 (ja) | 2008-12-08 | 2011-10-26 | 株式会社東芝 | 光半導体装置及び光半導体装置の製造方法 |
JP4724222B2 (ja) | 2008-12-12 | 2011-07-13 | 株式会社東芝 | 発光装置の製造方法 |
JP5342867B2 (ja) | 2008-12-19 | 2013-11-13 | スタンレー電気株式会社 | 半導体発光装置及び駆動方法 |
US7897419B2 (en) * | 2008-12-23 | 2011-03-01 | Cree, Inc. | Color correction for wafer level white LEDs |
CN201413836Y (zh) * | 2009-06-19 | 2010-02-24 | 张文周 | 发光装置的封装结构 |
JP4686625B2 (ja) | 2009-08-03 | 2011-05-25 | 株式会社東芝 | 半導体発光装置の製造方法 |
US20110049545A1 (en) | 2009-09-02 | 2011-03-03 | Koninklijke Philips Electronics N.V. | Led package with phosphor plate and reflective substrate |
JP2011071272A (ja) | 2009-09-25 | 2011-04-07 | Toshiba Corp | 半導体発光装置及びその製造方法 |
JP5534763B2 (ja) | 2009-09-25 | 2014-07-02 | 株式会社東芝 | 半導体発光装置の製造方法及び半導体発光装置 |
JP5378130B2 (ja) | 2009-09-25 | 2013-12-25 | 株式会社東芝 | 半導体発光装置 |
JP5113820B2 (ja) * | 2009-10-27 | 2013-01-09 | パナソニック株式会社 | 発光装置 |
JP5414579B2 (ja) | 2009-11-19 | 2014-02-12 | 株式会社東芝 | 半導体発光装置 |
JP5349260B2 (ja) | 2009-11-19 | 2013-11-20 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5101645B2 (ja) | 2010-02-24 | 2012-12-19 | 株式会社東芝 | 半導体発光装置 |
JP5197654B2 (ja) | 2010-03-09 | 2013-05-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5202559B2 (ja) | 2010-03-09 | 2013-06-05 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP2011199193A (ja) | 2010-03-23 | 2011-10-06 | Toshiba Corp | 発光装置及びその製造方法 |
JP5101650B2 (ja) | 2010-03-25 | 2012-12-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5325834B2 (ja) | 2010-05-24 | 2013-10-23 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5356312B2 (ja) | 2010-05-24 | 2013-12-04 | 株式会社東芝 | 半導体発光装置 |
JP5426481B2 (ja) | 2010-05-26 | 2014-02-26 | 株式会社東芝 | 発光装置 |
JP5281612B2 (ja) | 2010-05-26 | 2013-09-04 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP2011253925A (ja) | 2010-06-02 | 2011-12-15 | Toshiba Corp | 発光装置の製造方法 |
JP5337105B2 (ja) | 2010-06-03 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
JP5390472B2 (ja) | 2010-06-03 | 2014-01-15 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
TW201145614A (en) | 2010-06-03 | 2011-12-16 | Toshiba Kk | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
US20110298001A1 (en) | 2010-06-03 | 2011-12-08 | Kabushiki Kaisha Toshiba | Method for manufacturing light-emitting device and light-emitting device manufactured by the same |
JP2011253975A (ja) | 2010-06-03 | 2011-12-15 | Toshiba Corp | 発光装置およびその製造方法 |
JP5337106B2 (ja) | 2010-06-04 | 2013-11-06 | 株式会社東芝 | 半導体発光装置 |
JP5759790B2 (ja) * | 2010-06-07 | 2015-08-05 | 株式会社東芝 | 半導体発光装置の製造方法 |
JP5343040B2 (ja) | 2010-06-07 | 2013-11-13 | 株式会社東芝 | 半導体発光装置 |
JP5449039B2 (ja) | 2010-06-07 | 2014-03-19 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
JP5603793B2 (ja) | 2011-02-09 | 2014-10-08 | 株式会社東芝 | 半導体発光装置 |
JP5462217B2 (ja) * | 2011-05-20 | 2014-04-02 | 株式会社東芝 | 発光装置の製造方法 |
JP5985322B2 (ja) * | 2012-03-23 | 2016-09-06 | 株式会社東芝 | 半導体発光装置及びその製造方法 |
-
2011
- 2011-09-16 JP JP2011203855A patent/JP2013065726A/ja active Pending
-
2012
- 2012-03-14 WO PCT/JP2012/001803 patent/WO2013038579A1/en unknown
- 2012-03-14 CN CN201280043649.0A patent/CN103782401A/zh active Pending
- 2012-03-14 EP EP12714397.2A patent/EP2748871A1/en not_active Withdrawn
- 2012-03-20 TW TW101109503A patent/TWI515927B/zh not_active IP Right Cessation
-
2014
- 2014-03-10 US US14/202,890 patent/US9257416B2/en active Active
- 2014-12-01 HK HK14112073A patent/HK1198601A1/zh unknown
Also Published As
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EP2748871A1 (en) | 2014-07-02 |
US9257416B2 (en) | 2016-02-09 |
JP2013065726A (ja) | 2013-04-11 |
TW201314963A (zh) | 2013-04-01 |
US20140191258A1 (en) | 2014-07-10 |
WO2013038579A1 (en) | 2013-03-21 |
TWI515927B (zh) | 2016-01-01 |
CN103782401A (zh) | 2014-05-07 |
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