HK1176741A1 - 具有摻雜的外延區域的半導體器件及其製造方法 - Google Patents

具有摻雜的外延區域的半導體器件及其製造方法

Info

Publication number
HK1176741A1
HK1176741A1 HK13103367.4A HK13103367A HK1176741A1 HK 1176741 A1 HK1176741 A1 HK 1176741A1 HK 13103367 A HK13103367 A HK 13103367A HK 1176741 A1 HK1176741 A1 HK 1176741A1
Authority
HK
Hong Kong
Prior art keywords
fabrication
methods
semiconductor device
epitaxial region
doped epitaxial
Prior art date
Application number
HK13103367.4A
Other languages
English (en)
Inventor
．默西
．奧貝蒂內
．加尼
．派特
Original Assignee
英特爾公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 英特爾公司 filed Critical 英特爾公司
Publication of HK1176741A1 publication Critical patent/HK1176741A1/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7834—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with a non-planar structure, e.g. the gate or the source or the drain being non-planar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02529—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
    • H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66636—Lateral single gate silicon transistors with source or drain recessed by etching or first recessed by etching and then refilled
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate
    • H01L29/7848—Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate the means being located in the source/drain region, e.g. SiGe source and drain
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H01L29/7853—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET the body having a non-rectangular crossection

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Thin Film Transistor (AREA)
HK13103367.4A 2009-12-21 2013-03-18 具有摻雜的外延區域的半導體器件及其製造方法 HK1176741A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/643,912 US8598003B2 (en) 2009-12-21 2009-12-21 Semiconductor device having doped epitaxial region and its methods of fabrication
PCT/US2010/058199 WO2011084262A2 (en) 2009-12-21 2010-11-29 Semiconductor device having doped epitaxial region and its methods of fabrication

Publications (1)

Publication Number Publication Date
HK1176741A1 true HK1176741A1 (zh) 2013-08-02

Family

ID=44149856

Family Applications (1)

Application Number Title Priority Date Filing Date
HK13103367.4A HK1176741A1 (zh) 2009-12-21 2013-03-18 具有摻雜的外延區域的半導體器件及其製造方法

Country Status (8)

Country Link
US (4) US8598003B2 (zh)
EP (3) EP3208833B1 (zh)
JP (1) JP5615933B2 (zh)
KR (1) KR101476628B1 (zh)
CN (4) CN111883591A (zh)
HK (1) HK1176741A1 (zh)
TW (1) TWI564965B (zh)
WO (1) WO2011084262A2 (zh)

Families Citing this family (178)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8994104B2 (en) 1999-09-28 2015-03-31 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US8362575B2 (en) 2009-09-29 2013-01-29 Taiwan Semiconductor Manufacturing Company, Ltd. Controlling the shape of source/drain regions in FinFETs
US8273617B2 (en) 2009-09-30 2012-09-25 Suvolta, Inc. Electronic devices and systems, and methods for making and using the same
US8421162B2 (en) 2009-09-30 2013-04-16 Suvolta, Inc. Advanced transistors with punch through suppression
US8598003B2 (en) 2009-12-21 2013-12-03 Intel Corporation Semiconductor device having doped epitaxial region and its methods of fabrication
US8530286B2 (en) 2010-04-12 2013-09-10 Suvolta, Inc. Low power semiconductor transistor structure and method of fabrication thereof
US8569128B2 (en) 2010-06-21 2013-10-29 Suvolta, Inc. Semiconductor structure and method of fabrication thereof with mixed metal types
US8759872B2 (en) 2010-06-22 2014-06-24 Suvolta, Inc. Transistor with threshold voltage set notch and method of fabrication thereof
US8492234B2 (en) * 2010-06-29 2013-07-23 International Business Machines Corporation Field effect transistor device
US8759200B2 (en) * 2010-07-02 2014-06-24 Matheson Tri-Gas, Inc. Methods and apparatus for selective epitaxy of Si-containing materials and substitutionally doped crystalline Si-containing material
KR20120038195A (ko) * 2010-10-13 2012-04-23 삼성전자주식회사 반도체 소자 및 이의 제조 방법
JP2012089784A (ja) * 2010-10-22 2012-05-10 Renesas Electronics Corp 半導体装置および半導体装置の製造方法
US8778767B2 (en) 2010-11-18 2014-07-15 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuits and fabrication methods thereof
US8404551B2 (en) 2010-12-03 2013-03-26 Suvolta, Inc. Source/drain extension control for advanced transistors
US9484432B2 (en) 2010-12-21 2016-11-01 Intel Corporation Contact resistance reduction employing germanium overlayer pre-contact metalization
US8901537B2 (en) 2010-12-21 2014-12-02 Intel Corporation Transistors with high concentration of boron doped germanium
SG191896A1 (en) * 2011-02-08 2013-08-30 Applied Materials Inc Epitaxy of high tensile silicon alloy for tensile strain applications
US8461875B1 (en) 2011-02-18 2013-06-11 Suvolta, Inc. Digital circuits having improved transistors, and methods therefor
US8525271B2 (en) 2011-03-03 2013-09-03 Suvolta, Inc. Semiconductor structure with improved channel stack and method for fabrication thereof
US8748270B1 (en) 2011-03-30 2014-06-10 Suvolta, Inc. Process for manufacturing an improved analog transistor
US8796048B1 (en) 2011-05-11 2014-08-05 Suvolta, Inc. Monitoring and measurement of thin film layers
US8999861B1 (en) 2011-05-11 2015-04-07 Suvolta, Inc. Semiconductor structure with substitutional boron and method for fabrication thereof
US8811068B1 (en) 2011-05-13 2014-08-19 Suvolta, Inc. Integrated circuit devices and methods
US8569156B1 (en) 2011-05-16 2013-10-29 Suvolta, Inc. Reducing or eliminating pre-amorphization in transistor manufacture
US8735987B1 (en) 2011-06-06 2014-05-27 Suvolta, Inc. CMOS gate stack structures and processes
US8995204B2 (en) 2011-06-23 2015-03-31 Suvolta, Inc. Circuit devices and methods having adjustable transistor body bias
US8962400B2 (en) 2011-07-07 2015-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. In-situ doping of arsenic for source and drain epitaxy
US8629016B1 (en) 2011-07-26 2014-01-14 Suvolta, Inc. Multiple transistor types formed in a common epitaxial layer by differential out-diffusion from a doped underlayer
WO2013022753A2 (en) 2011-08-05 2013-02-14 Suvolta, Inc. Semiconductor devices having fin structures and fabrication methods thereof
US8748986B1 (en) 2011-08-05 2014-06-10 Suvolta, Inc. Electronic device with controlled threshold voltage
US8645878B1 (en) 2011-08-23 2014-02-04 Suvolta, Inc. Porting a circuit design from a first semiconductor process to a second semiconductor process
US8614128B1 (en) 2011-08-23 2013-12-24 Suvolta, Inc. CMOS structures and processes based on selective thinning
US8674433B2 (en) * 2011-08-24 2014-03-18 United Microelectronics Corp. Semiconductor process
US8713511B1 (en) 2011-09-16 2014-04-29 Suvolta, Inc. Tools and methods for yield-aware semiconductor manufacturing process target generation
CN103858215B (zh) * 2011-09-30 2016-12-07 英特尔公司 非平坦晶体管以及其制造的方法
US9236466B1 (en) 2011-10-07 2016-01-12 Mie Fujitsu Semiconductor Limited Analog circuits having improved insulated gate transistors, and methods therefor
US8895327B1 (en) 2011-12-09 2014-11-25 Suvolta, Inc. Tipless transistors, short-tip transistors, and methods and circuits therefor
US8658505B2 (en) * 2011-12-14 2014-02-25 International Business Machines Corporation Embedded stressors for multigate transistor devices
US8819603B1 (en) 2011-12-15 2014-08-26 Suvolta, Inc. Memory circuits and methods of making and designing the same
DE112011105945B4 (de) 2011-12-19 2021-10-28 Google Llc Gruppe III-N Nanodraht-Transistoren und Verfahren zu ihrer Herstellung
CN107068753B (zh) 2011-12-19 2020-09-04 英特尔公司 通过部分熔化升高的源极-漏极的晶体管的脉冲激光退火工艺
US8883600B1 (en) 2011-12-22 2014-11-11 Suvolta, Inc. Transistor having reduced junction leakage and methods of forming thereof
KR101650416B1 (ko) * 2011-12-23 2016-08-23 인텔 코포레이션 비평면 게이트 올어라운드 장치 및 그의 제조 방법
US8599623B1 (en) 2011-12-23 2013-12-03 Suvolta, Inc. Circuits and methods for measuring circuit elements in an integrated circuit device
US8970289B1 (en) 2012-01-23 2015-03-03 Suvolta, Inc. Circuits and devices for generating bi-directional body bias voltages, and methods therefor
US8877619B1 (en) 2012-01-23 2014-11-04 Suvolta, Inc. Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefrom
US9466696B2 (en) 2012-01-24 2016-10-11 Taiwan Semiconductor Manufacturing Company, Ltd. FinFETs and methods for forming the same
US9171925B2 (en) 2012-01-24 2015-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Multi-gate devices with replaced-channels and methods for forming the same
US9281378B2 (en) 2012-01-24 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Fin recess last process for FinFET fabrication
US9093550B1 (en) 2012-01-31 2015-07-28 Mie Fujitsu Semiconductor Limited Integrated circuits having a plurality of high-K metal gate FETs with various combinations of channel foundation structure and gate stack structure and methods of making same
US9406567B1 (en) 2012-02-28 2016-08-02 Mie Fujitsu Semiconductor Limited Method for fabricating multiple transistor devices on a substrate with varying threshold voltages
US8742509B2 (en) * 2012-03-01 2014-06-03 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for FinFETs
US8785285B2 (en) 2012-03-08 2014-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices and methods of manufacture thereof
US8863064B1 (en) 2012-03-23 2014-10-14 Suvolta, Inc. SRAM cell layout structure and devices therefrom
US9224604B2 (en) 2012-04-05 2015-12-29 Globalfoundries Inc. Device and method for forming sharp extension region with controllable junction depth and lateral overlap
US9293347B2 (en) 2012-05-18 2016-03-22 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US9299698B2 (en) 2012-06-27 2016-03-29 Mie Fujitsu Semiconductor Limited Semiconductor structure with multiple transistors having various threshold voltages
US9368628B2 (en) 2012-07-05 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with high mobility and strain channel
US8703556B2 (en) * 2012-08-30 2014-04-22 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8637955B1 (en) 2012-08-31 2014-01-28 Suvolta, Inc. Semiconductor structure with reduced junction leakage and method of fabrication thereof
US9318567B2 (en) * 2012-09-05 2016-04-19 United Microelectronics Corp. Fabrication method for semiconductor devices
US20140070358A1 (en) * 2012-09-12 2014-03-13 Globalfoundries Inc. Method of tailoring silicon trench profile for super steep retrograde well field effect transistor
US9105741B2 (en) * 2012-09-13 2015-08-11 International Business Machines Corporation Method of replacement source/drain for 3D CMOS transistors
US9112057B1 (en) 2012-09-18 2015-08-18 Mie Fujitsu Semiconductor Limited Semiconductor devices with dopant migration suppression and method of fabrication thereof
US9041126B2 (en) 2012-09-21 2015-05-26 Mie Fujitsu Semiconductor Limited Deeply depleted MOS transistors having a screening layer and methods thereof
KR20140039544A (ko) * 2012-09-24 2014-04-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
JP2016500927A (ja) 2012-10-31 2016-01-14 三重富士通セミコンダクター株式会社 低変動トランジスタ・ペリフェラル回路を備えるｄｒａｍ型デバイス、及び関連する方法
US8816754B1 (en) 2012-11-02 2014-08-26 Suvolta, Inc. Body bias circuits and methods
US9443962B2 (en) 2012-11-09 2016-09-13 Taiwan Semiconductor Manufacturing Company, Ltd. Recessing STI to increase fin height in fin-first process
US9349837B2 (en) 2012-11-09 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Recessing STI to increase Fin height in Fin-first process
US9093997B1 (en) 2012-11-15 2015-07-28 Mie Fujitsu Semiconductor Limited Slew based process and bias monitors and related methods
US9070477B1 (en) 2012-12-12 2015-06-30 Mie Fujitsu Semiconductor Limited Bit interleaved low voltage static random access memory (SRAM) and related methods
US20140167163A1 (en) * 2012-12-17 2014-06-19 International Business Machines Corporation Multi-Fin FinFETs with Epitaxially-Grown Merged Source/Drains
US8900958B2 (en) 2012-12-19 2014-12-02 Taiwan Semiconductor Manufacturing Company, Ltd. Epitaxial formation mechanisms of source and drain regions
US9112484B1 (en) 2012-12-20 2015-08-18 Mie Fujitsu Semiconductor Limited Integrated circuit process and bias monitors and related methods
US8853039B2 (en) 2013-01-17 2014-10-07 Taiwan Semiconductor Manufacturing Company, Ltd. Defect reduction for formation of epitaxial layer in source and drain regions
US9268885B1 (en) 2013-02-28 2016-02-23 Mie Fujitsu Semiconductor Limited Integrated circuit device methods and models with predicted device metric variations
US10134896B2 (en) * 2013-03-01 2018-11-20 Taiwan Semiconductor Manufacturing Co., Ltd. Cyclic deposition etch chemical vapor deposition epitaxy to reduce EPI abnormality
US9356136B2 (en) * 2013-03-07 2016-05-31 Taiwan Semiconductor Manufacturing Co., Ltd. Engineered source/drain region for n-Type MOSFET
US9831345B2 (en) * 2013-03-11 2017-11-28 Taiwan Semiconductor Manufacturing Company, Ltd. FinFET with rounded source/drain profile
US8940640B2 (en) * 2013-03-13 2015-01-27 Taiwan Semiconductor Manufacturing Company, Ltd. Source/drain structure of semiconductor device
US9299801B1 (en) 2013-03-14 2016-03-29 Mie Fujitsu Semiconductor Limited Method for fabricating a transistor device with a tuned dopant profile
KR102038486B1 (ko) * 2013-04-09 2019-10-30 삼성전자 주식회사 반도체 장치 및 그 제조 방법
US9331176B2 (en) * 2013-04-25 2016-05-03 Samsung Electronics Co., Ltd. Methods of forming field effect transistors, including forming source and drain regions in recesses of semiconductor fins
US9478571B1 (en) 2013-05-24 2016-10-25 Mie Fujitsu Semiconductor Limited Buried channel deeply depleted channel transistor
US9070710B2 (en) * 2013-06-07 2015-06-30 United Microelectronics Corp. Semiconductor process
US9293534B2 (en) 2014-03-21 2016-03-22 Taiwan Semiconductor Manufacturing Company, Ltd. Formation of dislocations in source and drain regions of FinFET devices
KR20150000546A (ko) * 2013-06-24 2015-01-05 삼성전자주식회사 반도체 소자 및 이의 제조 방법
DE112013007072T5 (de) * 2013-06-28 2016-01-28 Intel Corporation Nano-Strukturen und Nano-Merkmale mit Si (111)-Ebenen auf Si (100)-Wafer für III-N Epitaxie
US9209175B2 (en) * 2013-07-17 2015-12-08 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices having epitaxy regions with reduced facets
CN104425265B (zh) * 2013-08-20 2017-07-14 中芯国际集成电路制造(上海)有限公司 Pmos晶体管的形成方法及cmos晶体管的形成方法
WO2015047341A1 (en) * 2013-09-27 2015-04-02 Intel Corporation Non-planar semiconductor devices having multi-layered compliant substrates
US9246003B2 (en) * 2013-11-19 2016-01-26 Globalfoundries Inc. FINFET structures with fins recessed beneath the gate
US20150137237A1 (en) * 2013-11-21 2015-05-21 Globalfoundries Inc. Undoped epitaxial layer for junction isolation in a fin field effect transistor (finfet) device
CN103681355B (zh) * 2013-12-18 2016-04-06 北京大学 制备准soi源漏场效应晶体管器件的方法
US9711645B2 (en) * 2013-12-26 2017-07-18 International Business Machines Corporation Method and structure for multigate FinFET device epi-extension junction control by hydrogen treatment
US9054189B1 (en) 2014-01-06 2015-06-09 Samsung Electronics Co., Ltd. Semiconductor device and method for fabricating the same
US9698249B2 (en) * 2014-01-17 2017-07-04 Taiwan Semiconductor Manufacturing Company Ltd. Epitaxy in semiconductor structure and manufacturing method of the same
US9490345B2 (en) * 2014-01-17 2016-11-08 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US9853154B2 (en) 2014-01-24 2017-12-26 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with downward tapered region under facet region
US10164107B2 (en) 2014-01-24 2018-12-25 Taiwan Semiconductor Manufacturing Company Ltd. Embedded source or drain region of transistor with laterally extended portion
KR102155181B1 (ko) 2014-01-28 2020-09-11 삼성전자주식회사 반도체 장치 및 그 제조 방법
KR102193493B1 (ko) 2014-02-03 2020-12-21 삼성전자주식회사 반도체 장치 및 그 제조 방법
US9543410B2 (en) * 2014-02-14 2017-01-10 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device and formation thereof
US9379214B2 (en) * 2014-02-14 2016-06-28 Semi Solutions Llc Reduced variation MOSFET using a drain-extension-last process
US9543387B2 (en) * 2014-03-10 2017-01-10 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
KR102017611B1 (ko) 2014-04-04 2019-09-04 삼성전자주식회사 반도체 장치 및 그 제조방법
CN105304481A (zh) * 2014-06-10 2016-02-03 联华电子股份有限公司 半导体元件及其制作方法
US9490365B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US9502538B2 (en) 2014-06-12 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd Structure and formation method of fin-like field effect transistor
US9490346B2 (en) 2014-06-12 2016-11-08 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of fin-like field effect transistor
US20150372107A1 (en) * 2014-06-18 2015-12-24 Stmicroelectronics, Inc. Semiconductor devices having fins, and methods of forming semiconductor devices having fins
US9391200B2 (en) * 2014-06-18 2016-07-12 Stmicroelectronics, Inc. FinFETs having strained channels, and methods of fabricating finFETs having strained channels
US10084063B2 (en) * 2014-06-23 2018-09-25 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US9299803B2 (en) 2014-07-16 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Method for semiconductor device fabrication
CN105280492B (zh) * 2014-07-21 2018-08-10 中芯国际集成电路制造(上海)有限公司 半导体结构的形成方法
US9710006B2 (en) 2014-07-25 2017-07-18 Mie Fujitsu Semiconductor Limited Power up body bias circuits and methods
WO2016022260A1 (en) 2014-08-06 2016-02-11 Applied Materials, Inc. A method of modifying epitaxial growth shape on source drain area of transistor
KR102202754B1 (ko) 2014-08-14 2021-01-15 삼성전자주식회사 반도체 장치
US9319013B2 (en) 2014-08-19 2016-04-19 Mie Fujitsu Semiconductor Limited Operational amplifier input offset correction with transistor threshold voltage adjustment
US10263108B2 (en) 2014-08-22 2019-04-16 Taiwan Semiconductor Manufacturing Company, Ltd. Metal-insensitive epitaxy formation
DE102015100860A1 (de) 2014-08-22 2016-02-25 Taiwan Semiconductor Manufacturing Company, Ltd. Metallunempfindliche Epitaxiebildung
US9536985B2 (en) * 2014-09-29 2017-01-03 Globalfoundries Inc. Epitaxial growth of material on source/drain regions of FinFET structure
US9543438B2 (en) * 2014-10-15 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Contact resistance reduction technique
US10164108B2 (en) * 2014-10-17 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor (FinFET) device and method for forming the same
US9673277B2 (en) 2014-10-20 2017-06-06 Applied Materials, Inc. Methods and apparatus for forming horizontal gate all around device structures
CN107546108A (zh) * 2014-10-30 2018-01-05 应用材料公司 在低温下生长薄外延膜的方法
CN105633152B (zh) * 2014-11-05 2019-12-10 联华电子股份有限公司 半导体结构及其制作方法
US9406568B2 (en) 2014-11-21 2016-08-02 International Business Machines Corporation Semiconductor structure containing low-resistance source and drain contacts
US10170554B2 (en) * 2014-12-26 2019-01-01 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US9991384B2 (en) * 2015-01-15 2018-06-05 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including fin structures and manufacturing method thereof
US9406680B1 (en) * 2015-02-13 2016-08-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device including fin structures and manufacturing method thereof
US9991343B2 (en) * 2015-02-26 2018-06-05 Taiwan Semiconductor Manufacturing Company Ltd. LDD-free semiconductor structure and manufacturing method of the same
US9443957B1 (en) * 2015-03-12 2016-09-13 International Business Machines Corporation Self-aligned source and drain regions for semiconductor devices
KR20160112778A (ko) 2015-03-20 2016-09-28 삼성전자주식회사 핀 액티브 영역들을 갖는 반도체
KR102224849B1 (ko) 2015-03-24 2021-03-08 삼성전자주식회사 스트레서를 갖는 반도체 소자 및 그 제조 방법
WO2016164152A1 (en) 2015-04-10 2016-10-13 Applied Materials, Inc. Method to enhance growth rate for selective epitaxial growth
US9954107B2 (en) * 2015-05-05 2018-04-24 International Business Machines Corporation Strained FinFET source drain isolation
US10903210B2 (en) * 2015-05-05 2021-01-26 International Business Machines Corporation Sub-fin doped bulk fin field effect transistor (FinFET), Integrated Circuit (IC) and method of manufacture
US9530889B2 (en) * 2015-05-21 2016-12-27 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
EP3311417A4 (en) * 2015-06-19 2019-01-16 Intel Corporation CARBON-BASED INTERFACE FOR EPITAXIAL GROWTH SOURCE / DRAIN TRANSISTOR REGIONS
CN107743656A (zh) * 2015-06-19 2018-02-27 英特尔公司 具有外延生长的源极/漏极区的晶体管中的电阻减小
US10164096B2 (en) 2015-08-21 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US10164097B2 (en) * 2015-09-11 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9647122B2 (en) * 2015-09-15 2017-05-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method of forming the same
US9607838B1 (en) * 2015-09-18 2017-03-28 Taiwan Semiconductor Manufacturing Co., Ltd. Enhanced channel strain to reduce contact resistance in NMOS FET devices
KR102374321B1 (ko) 2015-10-14 2022-03-14 삼성전자주식회사 반도체 장치 제조 방법
US9722079B2 (en) 2015-10-15 2017-08-01 Taiwan Semiconductor Manufacturing Co., Ltd. Fin-type field effect transistor structure and manufacturing method thereof
CN106653751B (zh) * 2015-11-04 2019-12-03 中芯国际集成电路制造(北京)有限公司 半导体器件及其制造方法
KR102422158B1 (ko) 2015-12-23 2022-07-20 에스케이하이닉스 주식회사 반도체장치 및 그 제조 방법
US9570567B1 (en) * 2015-12-30 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Source and drain process for FinFET
US10796924B2 (en) 2016-02-18 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof by forming thin uniform silicide on epitaxial source/drain structure
US10276715B2 (en) * 2016-02-25 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and method for fabricating the same
US9570556B1 (en) 2016-03-03 2017-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and manufacturing method thereof
US9685554B1 (en) * 2016-03-07 2017-06-20 Taiwan Semiconductor Manufacturing Co., Ltd. Fin field effect transistor and semiconductor device
US9853129B2 (en) * 2016-05-11 2017-12-26 Applied Materials, Inc. Forming non-line-of-sight source drain extension in an nMOS finFET using n-doped selective epitaxial growth
US10038094B2 (en) * 2016-05-31 2018-07-31 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET structure and methods thereof
US10276663B2 (en) * 2016-07-18 2019-04-30 United Microelectronics Corp. Tunneling transistor and method of fabricating the same
CN108010846B (zh) * 2016-10-28 2020-08-07 中芯国际集成电路制造(上海)有限公司 用于改善短沟道效应的方法以及半导体结构
KR101960763B1 (ko) * 2016-11-03 2019-03-21 주식회사 유진테크 저온 에피택셜층 형성방법
KR102443814B1 (ko) * 2016-11-16 2022-09-15 삼성전자주식회사 반도체 장치 및 이의 제조 방법
US11011634B2 (en) * 2016-11-30 2021-05-18 Taiwan Semiconductor Manufacturing Co., Ltd. Elongated source/drain region structure in finFET device
US10170617B2 (en) * 2017-02-03 2019-01-01 Globalfoundries Vertical transport field effect transistors
TWI745365B (zh) * 2017-03-23 2021-11-11 聯華電子股份有限公司 半導體元件及其製作方法
KR102373630B1 (ko) 2017-05-26 2022-03-11 삼성전자주식회사 반도체 장치
US10468529B2 (en) * 2017-07-11 2019-11-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structure and formation method of semiconductor device structure with etch stop layer
KR102385567B1 (ko) 2017-08-29 2022-04-12 삼성전자주식회사 반도체 장치 및 반도체 장치의 제조 방법
CN109950314B (zh) * 2017-12-21 2023-01-20 中芯国际集成电路制造(上海)有限公司 半导体结构及其制造方法
US10665697B2 (en) * 2018-06-15 2020-05-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device and method
US11410890B2 (en) * 2018-06-28 2022-08-09 Taiwan Semiconductor Manufacturing Co., Ltd. Epitaxial layers in source/drain contacts and methods of forming the same
US11222980B2 (en) * 2019-07-18 2022-01-11 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and a semiconductor device
KR20220041882A (ko) * 2019-08-01 2022-04-01 어플라이드 머티어리얼스, 인코포레이티드 트랜지스터들에 대한 비소 확산 프로파일 엔지니어링
JP7230877B2 (ja) * 2020-04-20 2023-03-01 株式会社Sumco エピタキシャルウェーハの製造システム及びエピタキシャルウェーハの製造方法
US11522049B2 (en) 2020-04-27 2022-12-06 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion barrier layer for source and drain structures to increase transistor performance
TWI764399B (zh) 2020-04-27 2022-05-11 台灣積體電路製造股份有限公司 半導體裝置、積體晶片及其形成方法
US11935793B2 (en) * 2020-05-29 2024-03-19 Taiwan Semiconductor Manufacturing Co., Ltd. Dual dopant source/drain regions and methods of forming same
US11482594B2 (en) 2020-08-27 2022-10-25 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor devices with backside power rail and method thereof
US11854831B2 (en) * 2020-11-24 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Cleaning process for source/drain epitaxial structures

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6214679B1 (en) * 1999-12-30 2001-04-10 Intel Corporation Cobalt salicidation method on a silicon germanium film
US7473947B2 (en) * 2002-07-12 2009-01-06 Intel Corporation Process for ultra-thin body SOI devices that incorporate EPI silicon tips and article made thereby
US7786021B2 (en) 2002-11-14 2010-08-31 Sharp Laboratories Of America, Inc. High-density plasma multilayer gate oxide
US7078742B2 (en) * 2003-07-25 2006-07-18 Taiwan Semiconductor Manufacturing Co., Ltd. Strained-channel semiconductor structure and method of fabricating the same
US7138320B2 (en) * 2003-10-31 2006-11-21 Advanced Micro Devices, Inc. Advanced technique for forming a transistor having raised drain and source regions
KR100591157B1 (ko) 2004-06-07 2006-06-19 동부일렉트로닉스 주식회사 반도체 소자의 제조방법
US7361563B2 (en) 2004-06-17 2008-04-22 Samsung Electronics Co., Ltd. Methods of fabricating a semiconductor device using a selective epitaxial growth technique
US7539732B2 (en) 2004-09-15 2009-05-26 International Business Machines Corporation Client based instant messenger queue limit
US20060108651A1 (en) * 2004-11-22 2006-05-25 International Business Machines Corporation Lowered Source/Drain Transistors
US7195985B2 (en) 2005-01-04 2007-03-27 Intel Corporation CMOS transistor junction regions formed by a CVD etching and deposition sequence
DE102005004411B4 (de) 2005-01-31 2010-09-16 Advanced Micro Devices, Inc., Sunnyvale Verfahren für die Herstellung eines in-situ-gebildeten Halo-Gebietes in einem Transistorelement
US7438760B2 (en) 2005-02-04 2008-10-21 Asm America, Inc. Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition
US7518196B2 (en) * 2005-02-23 2009-04-14 Intel Corporation Field effect transistor with narrow bandgap source and drain regions and method of fabrication
US7282415B2 (en) * 2005-03-29 2007-10-16 Freescale Semiconductor, Inc. Method for making a semiconductor device with strain enhancement
JP4984665B2 (ja) * 2005-06-22 2012-07-25 富士通セミコンダクター株式会社 半導体装置およびその製造方法
US7494858B2 (en) 2005-06-30 2009-02-24 Intel Corporation Transistor with improved tip profile and method of manufacture thereof
US7608515B2 (en) * 2006-02-14 2009-10-27 Taiwan Semiconductor Manufacturing Company, Ltd. Diffusion layer for stressed semiconductor devices
TW200805458A (en) * 2006-03-24 2008-01-16 Applied Materials Inc Carbon precursors for use during silicon epitaxial film formation
US20070238236A1 (en) * 2006-03-28 2007-10-11 Cook Ted Jr Structure and fabrication method of a selectively deposited capping layer on an epitaxially grown source drain
DE102006035665B4 (de) * 2006-07-31 2010-12-09 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung eines Feldeffekttransistors und Feldeffekttransistor
US7554110B2 (en) * 2006-09-15 2009-06-30 Taiwan Semiconductor Manufacturing Company, Ltd. MOS devices with partial stressor channel
US7943469B2 (en) * 2006-11-28 2011-05-17 Intel Corporation Multi-component strain-inducing semiconductor regions
US7960236B2 (en) * 2006-12-12 2011-06-14 Applied Materials, Inc. Phosphorus containing Si epitaxial layers in N-type source/drain junctions
US8394196B2 (en) 2006-12-12 2013-03-12 Applied Materials, Inc. Formation of in-situ phosphorus doped epitaxial layer containing silicon and carbon
JP2008235568A (ja) 2007-03-20 2008-10-02 Toshiba Corp 半導体装置およびその製造方法
US7732285B2 (en) * 2007-03-28 2010-06-08 Intel Corporation Semiconductor device having self-aligned epitaxial source and drain extensions
US7833883B2 (en) * 2007-03-28 2010-11-16 Intel Corporation Precursor gas mixture for depositing an epitaxial carbon-doped silicon film
US8450165B2 (en) * 2007-05-14 2013-05-28 Intel Corporation Semiconductor device having tipless epitaxial source/drain regions
US7759199B2 (en) 2007-09-19 2010-07-20 Asm America, Inc. Stressor for engineered strain on channel
JP2009147265A (ja) * 2007-12-18 2009-07-02 Panasonic Corp 半導体装置及びその製造方法
US20090166625A1 (en) * 2007-12-28 2009-07-02 United Microelectronics Corp. Mos device structure
US7935589B2 (en) * 2008-04-29 2011-05-03 Chartered Semiconductor Manufacturing, Ltd. Enhanced stress for transistors
US20090302348A1 (en) * 2008-06-10 2009-12-10 International Business Machines Corporation Stress enhanced transistor devices and methods of making
JP4854719B2 (ja) * 2008-09-12 2012-01-18 富士通セミコンダクター株式会社 半導体装置の製造方法
US8598003B2 (en) 2009-12-21 2013-12-03 Intel Corporation Semiconductor device having doped epitaxial region and its methods of fabrication

Also Published As

Publication number Publication date
EP3208833B1 (en) 2023-05-17
EP2517229A2 (en) 2012-10-31
CN102687253B (zh) 2016-10-19
KR20120086369A (ko) 2012-08-02
EP3109895B1 (en) 2022-11-16
KR101476628B1 (ko) 2014-12-26
JP5615933B2 (ja) 2014-10-29
EP3208833A1 (en) 2017-08-23
US8598003B2 (en) 2013-12-03
CN105470287B (zh) 2020-07-14
WO2011084262A3 (en) 2011-09-09
CN105470287A (zh) 2016-04-06
US20210159339A1 (en) 2021-05-27
US11908934B2 (en) 2024-02-20
US10957796B2 (en) 2021-03-23
EP3109895A3 (en) 2017-02-15
CN107068737A (zh) 2017-08-18
TWI564965B (zh) 2017-01-01
US20110147828A1 (en) 2011-06-23
EP2517229B1 (en) 2019-04-10
US20140084369A1 (en) 2014-03-27
CN102687253A (zh) 2012-09-19
EP3109895A2 (en) 2016-12-28
EP2517229A4 (en) 2014-05-07
JP2013511159A (ja) 2013-03-28
CN111883591A (zh) 2020-11-03
TW201126614A (en) 2011-08-01
US20240145592A1 (en) 2024-05-02
CN107068737B (zh) 2022-07-26
WO2011084262A2 (en) 2011-07-14

Similar Documents

Publication Publication Date Title
HK1176741A1 (zh) 具有摻雜的外延區域的半導體器件及其製造方法
EP2497116A4 (en) SEMICONDUCTOR SIGNALING DEVICES WITH SELECTIVELY DOCKED JFET REGIONS AND CORRESPONDING METHOD FOR FORMING SUCH DEVICES
HK1194861A1 (zh) 半導體器件及其製造方法
EP2513950A4 (en) SEMICONDUCTOR ASSEMBLY STRUCTURES WITH MODULATED DOPING AND CORRESPONDING METHODS
EP2477228A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2390903A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
TWI562242B (en) Semiconductor device and manufacturing method thereof
GB2483414B (en) Semiconductor Device and Manufacturing Method Thereof
TWI562364B (en) Semiconductor device and manufacturing method thereof
EP2514857A4 (en) SiC EPITAXIAL GALETTE AND METHOD FOR MANUFACTURING THE SAME
EP2507822A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
EP2497115A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
EP2637212A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
DE102011082289A8 (de) SiC-Halbleitervorrichtung und Herstellungsverfahren hierfür
EP2481089A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2416366A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
EP2486594A4 (en) OXIDE SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICE
EP2412010A4 (en) CONFIGURATION AND PREPARATION OF A SEMICONDUCTOR STRUCTURE WITH A FIELD EFFECT TRANSISTOR WITH EXTENDED DRAIN
GB201201821D0 (en) Method of forming semiconductor film and photovoltaic device including the film
EP2553730A4 (en) SEMICONDUCTOR DEVICE AND METHOD
EP2428983A4 (en) SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
EP2741317A4 (en) DEVICE AND METHOD FOR PRODUCING AN EPITAXIAL DISC
EP2486593A4 (en) SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
GB201121915D0 (en) Semiconductor device and manufacturing method thereof
EP2637198A4 (en) SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR