HK1052728B - 薄膜沉積用分子束源裝置和分子束沉積薄膜的方法 - Google Patents

薄膜沉積用分子束源裝置和分子束沉積薄膜的方法

Info

Publication number
HK1052728B
HK1052728B HK03105011.1A HK03105011A HK1052728B HK 1052728 B HK1052728 B HK 1052728B HK 03105011 A HK03105011 A HK 03105011A HK 1052728 B HK1052728 B HK 1052728B
Authority
HK
Hong Kong
Prior art keywords
thin film
film deposition
method therefor
molecular beam
beam epitaxy
Prior art date
Application number
HK03105011.1A
Other languages
English (en)
Other versions
HK1052728A1 (en
Inventor
水上時雄
齋藤建勇
城戶淳二
Original Assignee
長州產業株式會社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 長州產業株式會社 filed Critical 長州產業株式會社
Publication of HK1052728A1 publication Critical patent/HK1052728A1/xx
Publication of HK1052728B publication Critical patent/HK1052728B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/54—Organic compounds
    • C30B29/58—Macromolecular compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
HK03105011.1A 2001-06-26 2003-07-11 薄膜沉積用分子束源裝置和分子束沉積薄膜的方法 HK1052728B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001192261A JP2003002778A (ja) 2001-06-26 2001-06-26 薄膜堆積用分子線セル

Publications (2)

Publication Number Publication Date
HK1052728A1 HK1052728A1 (en) 2003-09-26
HK1052728B true HK1052728B (zh) 2009-10-30

Family

ID=19030738

Family Applications (1)

Application Number Title Priority Date Filing Date
HK03105011.1A HK1052728B (zh) 2001-06-26 2003-07-11 薄膜沉積用分子束源裝置和分子束沉積薄膜的方法

Country Status (6)

Country Link
US (1) US20020197418A1 (zh)
JP (1) JP2003002778A (zh)
KR (1) KR100951493B1 (zh)
CN (1) CN100513629C (zh)
HK (1) HK1052728B (zh)
TW (1) TW574408B (zh)

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US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
US7517551B2 (en) * 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
TWI264473B (en) * 2001-10-26 2006-10-21 Matsushita Electric Works Ltd Vacuum deposition device and vacuum deposition method
SG113448A1 (en) 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
US7309269B2 (en) 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
TWI336905B (en) 2002-05-17 2011-02-01 Semiconductor Energy Lab Evaporation method, evaporation device and method of fabricating light emitting device
ATE326555T1 (de) * 2002-07-19 2006-06-15 Lg Electronics Inc Quelle zur thermischen pvd-beschichtung für organische elektrolumineszente schichten
US20040040504A1 (en) 2002-08-01 2004-03-04 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
US20040123804A1 (en) 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
JP4463492B2 (ja) * 2003-04-10 2010-05-19 株式会社半導体エネルギー研究所 製造装置
JP2007500794A (ja) * 2003-05-16 2007-01-18 エスブイティー アソーシエイツ インコーポレイテッド 薄膜蒸着エバポレーター
KR100623374B1 (ko) 2003-08-18 2006-09-18 엘지전자 주식회사 유기 전계 발광층 증착용 증착원
JP4344631B2 (ja) 2004-03-02 2009-10-14 長州産業株式会社 有機物薄膜堆積用分子線源
US7402779B2 (en) * 2004-07-13 2008-07-22 Lucent Technologies Inc. Effusion cell and method for use in molecular beam deposition
JP5025151B2 (ja) * 2005-03-23 2012-09-12 株式会社半導体エネルギー研究所 蒸着物の作製方法
KR100700497B1 (ko) * 2005-12-21 2007-03-28 삼성에스디아이 주식회사 증착장치
JP2007201348A (ja) * 2006-01-30 2007-08-09 Epiquest:Kk パージセル
CN100376717C (zh) * 2006-02-27 2008-03-26 浙江大学 化学气相沉积过程中的介观尺度温区温度稳定方法
TWI535874B (zh) * 2006-12-13 2016-06-01 環球展覽公司 用於固相材料之改良蒸發方法
DE102007012370A1 (de) * 2007-03-14 2008-09-18 Createc Fischer & Co. Gmbh Bedampfungseinrichtung und Bedampfungsverfahren zur Molekularstrahlbedampfung und Molekularstrahlepitaxie
JP5123567B2 (ja) * 2007-05-25 2013-01-23 金子 博之 気化装置、及び、気化装置を備えたプラズマ処理装置
JP4331791B2 (ja) * 2007-10-09 2009-09-16 パナソニック株式会社 成膜方法および成膜装置
WO2012133201A1 (ja) * 2011-03-30 2012-10-04 シャープ株式会社 蒸着粒子射出装置、蒸着粒子射出方法および蒸着装置
TWI479039B (zh) * 2011-07-05 2015-04-01 Lextar Electronics Corp 蒸鍍隔離元件及具有蒸鍍隔離元件的蒸鍍裝置
DE102012215708A1 (de) * 2012-09-05 2014-03-06 Osram Opto Semiconductors Gmbh Vorratsbehälter für eine beschichtungsanlage und beschichtungsanlage
CN103556118B (zh) * 2013-10-12 2016-03-02 深圳市华星光电技术有限公司 蒸镀装置
CN104046823A (zh) * 2014-06-13 2014-09-17 上海和辉光电有限公司 梯度金属陶瓷复合材料及其制备方法
CN104947042B (zh) 2015-05-25 2017-09-29 京东方科技集团股份有限公司 一种蒸发装置
JP6488928B2 (ja) * 2015-07-15 2019-03-27 アイシン精機株式会社 蒸着装置
CN108342693A (zh) * 2017-01-23 2018-07-31 南京高光半导体材料有限公司 防止蒸发源坩埚内材料劣化的方法
CN111188013A (zh) * 2018-11-14 2020-05-22 深圳市融光纳米科技有限公司 一种真空蒸发镀膜方法、混合物、制备光学薄膜的方法
CN111455342A (zh) * 2019-01-18 2020-07-28 北京铂阳顶荣光伏科技有限公司 蒸发镀膜设备、蒸发镀膜系统及蒸发镀膜控制方法
KR102265055B1 (ko) * 2019-06-05 2021-06-15 엘지전자 주식회사 증착 장치
CN114524424A (zh) * 2021-12-17 2022-05-24 青海泰丰先行锂能科技有限公司 一种高压实高容量磷酸铁锂正极材料的制备方法
CN116988157B (zh) * 2023-09-26 2023-12-05 山西第三代半导体技术创新中心有限公司 一种降低晶体生长孔洞碳化硅籽晶粘接炉

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JP3738522B2 (ja) * 1997-04-07 2006-01-25 松下電工株式会社 電子ビームによる蒸発方法
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EP1132493A3 (en) * 2000-03-09 2001-09-19 Junji Kido Vapor deposition method of organic compound and refinement method of organic compound

Also Published As

Publication number Publication date
JP2003002778A (ja) 2003-01-08
HK1052728A1 (en) 2003-09-26
CN100513629C (zh) 2009-07-15
TW574408B (en) 2004-02-01
KR100951493B1 (ko) 2010-04-07
US20020197418A1 (en) 2002-12-26
KR20030004033A (ko) 2003-01-14
CN1393575A (zh) 2003-01-29

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)

Effective date: 20210626