GB832067A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB832067A
GB832067A GB13826/56A GB1382656A GB832067A GB 832067 A GB832067 A GB 832067A GB 13826/56 A GB13826/56 A GB 13826/56A GB 1382656 A GB1382656 A GB 1382656A GB 832067 A GB832067 A GB 832067A
Authority
GB
United Kingdom
Prior art keywords
contact plate
litre
mole
junction
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13826/56A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US507312A external-priority patent/US2763822A/en
Priority claimed from US525595A external-priority patent/US2801375A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB832067A publication Critical patent/GB832067A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550°C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/20—Conductive package substrates serving as an interconnection, e.g. metal plates
    • H10W70/24—Conductive package substrates serving as an interconnection, e.g. metal plates characterised by materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Ceramic Products (AREA)
  • Contacts (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB13826/56A 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices Expired GB832067A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US507312A US2763822A (en) 1955-05-10 1955-05-10 Silicon semiconductor devices
US525595A US2801375A (en) 1955-08-01 1955-08-01 Silicon semiconductor devices and processes for making them

Publications (1)

Publication Number Publication Date
GB832067A true GB832067A (en) 1960-04-06

Family

ID=27055794

Family Applications (2)

Application Number Title Priority Date Filing Date
GB13826/56A Expired GB832067A (en) 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices
GB23230/56A Expired GB823559A (en) 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB23230/56A Expired GB823559A (en) 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices

Country Status (6)

Country Link
BE (2) BE550001A (enExample)
CH (2) CH350720A (enExample)
DE (2) DE1050450B (enExample)
FR (2) FR1153475A (enExample)
GB (2) GB832067A (enExample)
NL (2) NL208617A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994013012A1 (en) * 1992-11-24 1994-06-09 Asea Brown Boveri Ab Device for cooling sheet elements for power electronics
CN104070295A (zh) * 2013-03-29 2014-10-01 三菱综合材料株式会社 焊料粉末、使用该粉末的焊料用浆料和电子部件安装方法

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1285068B (de) * 1957-01-11 1968-12-12 Siemens Ag Legierungskontakt auf mit einer Goldschicht versehenen Halbleiterkristallen
NL243222A (enExample) * 1958-09-10 1900-01-01
NL242265A (enExample) * 1958-09-30 1900-01-01
NL102017C (enExample) * 1959-05-12
DE1233949B (de) * 1959-07-13 1967-02-09 Siemens Ag Verfahren zur Herstellung einer Halbleiter-gleichrichteranordnung mit einem einkristallinen Halbleiterkoerper
NL249694A (enExample) * 1959-12-30
DE1113519B (de) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Siliziumgleichrichter fuer hohe Stromstaerken
NL260951A (enExample) * 1960-03-07
DE1153461B (de) * 1960-06-23 1963-08-29 Siemens Ag Halbleiteranordnung
DE1141029B (de) * 1960-06-23 1962-12-13 Siemens Ag Halbleiteranordnung und Verfahren zu ihrer Herstellung
NL269346A (enExample) * 1960-09-20
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
NL270339A (enExample) * 1960-10-20
DE1229649B (de) * 1961-08-10 1966-12-01 Siemens Ag Verfahren zum Herstellen eines Halbleiter-elementes und Halbleiteranordnung mit einem nach diesem Verfahren hergestellten Halbleiterelement
DE1240187B (de) * 1961-08-10 1967-05-11 Siemens Ag Verfahren zur Herstellung eines sperrfreien Kontaktes durch Auflegieren von Aluminium
DE1246129B (de) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Verfahren zum Herstellen eines Halbleiterbauelementes
DE1185731B (de) * 1962-03-28 1965-01-21 Siemens Ag Halbleiterelement mit pn-UEbergang
DE1295697B (de) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Halbleiterbauelement und Verfahren zu seiner Herstellung
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices
DE1483298B1 (de) * 1965-06-11 1971-01-28 Siemens Ag Elektrische Kontaktanordnung zwischen einem Germanium-Silizium-Halbleiterkoerper und einem Kontaktstueck und Verfahren zur Herstellung derselben
FR2046593A5 (enExample) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
DE102015108056A1 (de) 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauteil, optoelektronische Anordnung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils
CN112186044B (zh) * 2020-09-30 2024-11-19 中国振华集团永光电子有限公司（国营第八七三厂） 一种玻璃钝化实体封装低压二极管及其制造方法
CN116275342A (zh) * 2023-03-20 2023-06-23 山东天工岩土工程设备有限公司 一种真空感应钎焊装置及方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2220961A (en) * 1937-11-06 1940-11-12 Bell Telephone Labor Inc Soldering alloy
US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
DE872602C (de) * 1951-03-20 1953-04-02 Siemens Ag Verfahren zur Befestigung von Halbleitern
NL91163C (enExample) * 1952-09-16
NL104654C (enExample) * 1952-12-31 1900-01-01
GB8817261D0 (en) * 1988-07-20 1988-08-24 Sperry Sun Inc Down-hole bearing assemblies for maintaining survey instrument assembly & core barrel orientation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994013012A1 (en) * 1992-11-24 1994-06-09 Asea Brown Boveri Ab Device for cooling sheet elements for power electronics
CN104070295A (zh) * 2013-03-29 2014-10-01 三菱综合材料株式会社 焊料粉末、使用该粉末的焊料用浆料和电子部件安装方法

Also Published As

Publication number Publication date
CH367896A (de) 1963-03-15
FR1157057A (fr) 1958-05-27
BE547698A (enExample) 1900-01-01
NL208617A (enExample) 1900-01-01
DE1292260B (de) 1969-04-10
GB823559A (en) 1959-11-11
CH350720A (de) 1960-12-15
DE1050450B (de) 1959-02-12
BE550001A (fr) 1956-08-31
FR1153475A (fr) 1958-03-11
NL109558C (enExample) 1900-01-01

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