GB823559A - Improvements in or relating to silicon semiconductor devices - Google Patents

Improvements in or relating to silicon semiconductor devices

Info

Publication number
GB823559A
GB823559A GB23230/56A GB2323056A GB823559A GB 823559 A GB823559 A GB 823559A GB 23230/56 A GB23230/56 A GB 23230/56A GB 2323056 A GB2323056 A GB 2323056A GB 823559 A GB823559 A GB 823559A
Authority
GB
United Kingdom
Prior art keywords
silver
silicon
molybdenum
contact
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB23230/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Westinghouse Electric International Co
Original Assignee
Westinghouse Electric International Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US507312A external-priority patent/US2763822A/en
Priority claimed from US525595A external-priority patent/US2801375A/en
Application filed by Westinghouse Electric International Co filed Critical Westinghouse Electric International Co
Publication of GB823559A publication Critical patent/GB823559A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • H—ELECTRICITY
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    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Ceramic Products (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Contacts (AREA)

Abstract

823,559. Semi-conductor devices. WESTINGHOUSE ELECTRIC INTERNATIONAL CO. July 27, 1956 [Aug. 1, 1955], No. 23230/56. Class 37. A semi-conductor device consists of a wafer of silicon attached to an end contact member of molybdenum, tungsten, or alloys containing one of these materials as a base, by means of a solder consisting of at least 72% by weight of silver and 0.5% to 8% of antimony. The balance may comprise one of the elements germanium, silicon, lead and tin. A list of suitable compositions for the solder is given in the Specification. As shown in Fig. 1 a silicon PN junction rectifier comprises an end contact 12 of molybdenum, tungsten or other base alloy from 20 to 100 mils. in thickness and “ to 2 inches in diameter and a silicon wafer 18. Both the molybdenum and tungsten may be alloyed with minor amounts of other metals, thus molybdenum may be alloyed with from 5% to 25% of osmium, platinum, chromium, nickel, cobalt, silicon copper and silver. A thin coating 13, 14 of silver or silver alloy is applied to the face surfaces of contact 12. This may be done by coating the faces with a thin sheet or a fine powder and heating in a hydrogen atmosphere at 1200‹ C. Alternatively, the molybdenum may be coated with a nickel phosphide coating deposited from an aqueous solution containing nickel sulphate NiCl 2 and sodium hypophosphite. Immersion of the molybdenum in the solution will produce a coating of nickel phosphide containing 95% nickel to which by silver cyanide electro-plating a coating of 1 mil. thickness of silver may be applied. The molybdenum may also be coated with " Kovar " (Registered Trade Mark). Upon the coated molybdenum end contact is placed a foil of the silver-antimony base solder referred to above. On the upper surface of the silicon wafer 18 is a foil 20 of a thickness 1 to 2 mils. of aluminium or an aluminium based alloy with an element from Group III or IV which function both to enable soldering to the upper contact 22 and the formation of the PN junction by diffusion of P-type material into the upper portion of the N-type wafer. Layer 20 may consist of pure aluminium, with slight amounts of impurities such as magnesium, sodium, zinc or an alloy containing aluminium, the balance being silicon, gallium, indium and germanium. Various examples of suitable alloys are given in the Specification. Upper contact 22 is of the same material and consists of a flat disc portion of smaller diameter than the silicon. A well 28 of the contact 22 has a thin coating 29 of a suitable solder such as a silver-gold alloy, silver-germanium, gold alone or silver-germanium or nickel phosphide. During manufacture the layers described with reference to Fig. 1 are placed in a furnace 50 shown in Fig. 3. The furnace comprises a base through which pass conduits 54, one of which is connected with a pump to produce a vacuum and the other may introduce a protective gas such as helium or argon. The components are mounted in a recess in a graphite block 64 on a refractory support 62. A weight 68 is applied to contact 22. A heater 72 may be lowered around the bell to heat the block 64 by radiation or a high-frequency heating coil may be used instead. During manufacture a number of assemblies is placed in the graphite block, bell 58 placed in position and the graphite block heated to 850‹ to 1000‹ C. The resulting rectifiers are then placed in a hermetically sealed casing. The base may be soldered to the silicon in a separate stage from the top contact.
GB23230/56A 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices Expired GB823559A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US507312A US2763822A (en) 1955-05-10 1955-05-10 Silicon semiconductor devices
US525595A US2801375A (en) 1955-08-01 1955-08-01 Silicon semiconductor devices and processes for making them

Publications (1)

Publication Number Publication Date
GB823559A true GB823559A (en) 1959-11-11

Family

ID=27055794

Family Applications (2)

Application Number Title Priority Date Filing Date
GB13826/56A Expired GB832067A (en) 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices
GB23230/56A Expired GB823559A (en) 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB13826/56A Expired GB832067A (en) 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices

Country Status (6)

Country Link
BE (2) BE550001A (en)
CH (2) CH350720A (en)
DE (2) DE1050450B (en)
FR (2) FR1153475A (en)
GB (2) GB832067A (en)
NL (2) NL208617A (en)

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WO2016184781A1 (en) * 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component
CN112186044A (en) * 2020-09-30 2021-01-05 中国振华集团永光电子有限公司（国营第八七三厂） Glass passivation entity encapsulation low-voltage diode and manufacturing method thereof

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DE1233949B (en) * 1959-07-13 1967-02-09 Siemens Ag Method for producing a semiconductor rectifier arrangement with a single-crystal semiconductor body
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DE1113519B (en) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Silicon rectifier for high currents
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DE1141029B (en) * 1960-06-23 1962-12-13 Siemens Ag Semiconductor device and method for its manufacture
NL269346A (en) * 1960-09-20
DE1133834B (en) * 1960-09-21 1962-07-26 Siemens Ag Silicon rectifier and process for its manufacture
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DE1229649B (en) * 1961-08-10 1966-12-01 Siemens Ag Method for producing a semiconductor element and semiconductor arrangement with a semiconductor element produced by this method
DE1240187B (en) * 1961-08-10 1967-05-11 Siemens Ag Process for creating a lock-free contact by alloying aluminum
DE1246129B (en) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Method for manufacturing a semiconductor component
DE1185731B (en) * 1962-03-28 1965-01-21 Siemens Ag Semiconductor element with pn transition
DE1295697B (en) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Semiconductor component and method for its manufacture
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices
DE1483298B1 (en) * 1965-06-11 1971-01-28 Siemens Ag Electrical contact arrangement between a germanium-silicon semiconductor body and a contact piece and method for producing the same
FR2046593A5 (en) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
SE500281C2 (en) * 1992-11-24 1994-05-24 Asea Brown Boveri Apparatus for cooling disc-shaped power electronics elements as well as disc-shaped power electronics elements intended to be mounted in such a cooling device
JP6079375B2 (en) * 2013-03-29 2017-02-15 三菱マテリアル株式会社 Solder powder, method for producing the same, and solder paste using the powder

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US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
DE872602C (en) * 1951-03-20 1953-04-02 Siemens Ag Method of fastening semiconductors
NL91163C (en) * 1952-09-16
NL104654C (en) * 1952-12-31 1900-01-01
GB8817261D0 (en) * 1988-07-20 1988-08-24 Sperry Sun Inc Down-hole bearing assemblies for maintaining survey instrument assembly & core barrel orientation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016184781A1 (en) * 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component
US10290784B2 (en) 2015-05-21 2019-05-14 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic arrangement and method for producing an optoelectronic semiconductor component
CN112186044A (en) * 2020-09-30 2021-01-05 中国振华集团永光电子有限公司（国营第八七三厂） Glass passivation entity encapsulation low-voltage diode and manufacturing method thereof

Also Published As

Publication number Publication date
CH350720A (en) 1960-12-15
FR1157057A (en) 1958-05-27
NL109558C (en) 1900-01-01
BE550001A (en) 1956-08-31
FR1153475A (en) 1958-03-11
GB832067A (en) 1960-04-06
NL208617A (en) 1900-01-01
CH367896A (en) 1963-03-15
DE1050450B (en) 1959-02-12
DE1292260B (en) 1969-04-10
BE547698A (en) 1900-01-01

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