GB832067A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB832067A
GB832067A GB13826/56A GB1382656A GB832067A GB 832067 A GB832067 A GB 832067A GB 13826/56 A GB13826/56 A GB 13826/56A GB 1382656 A GB1382656 A GB 1382656A GB 832067 A GB832067 A GB 832067A
Authority
GB
United Kingdom
Prior art keywords
contact plate
litre
mole
junction
nickel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB13826/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US507312A external-priority patent/US2763822A/en
Priority claimed from US525595A external-priority patent/US2801375A/en
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB832067A publication Critical patent/GB832067A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
    • B23K35/262—Sn as the principal constituent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
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    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Electrochemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
  • Ceramic Products (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Contacts (AREA)

Abstract

Contact plates used in the PN junction silicon rectifier described in Group XXXVI consist of Mo containing 5-25% of Pt, Os, Cr, Ni, Co, Si, Cu or Ag, or of an alloy of 5% W and 95% Mo. The Si is fused to one contact plate through one of the following alloys which form a PN junction within the silicon: Al containing small amounts of Mg, Na and Zn; 88.4% Al, 11.6% Si; 95% Al, 5% Si; 90% Al, 10% Ge; 47% Al, 53% Ge; 88% Al, 12% In; 96% Al, 4% In; 50% Al, 20% Si, 20% In, 10% Ge; 90% Al, 5% Si, 5% In; 85% Al, 5% Si, 5% In, 5% Ge; 88% Al, 5% Si, 2% In, 3% Ge. An external electrode is connected to the contact plate by one of the following solders: 70% Ag, 30% Au; 97% Ag, 3% Ge; 95% Ag, 5% Si; 95% Ag, 5% Ge. Another contact plate is ohmically connected to the Si by one of the following solders: 65-90% Sn, 35-10% Ag; 5-16% Si, 95-84% Ag; 25-50% Pb, 75-50% Ag; 5-30% Ge, 95-70% Ag; 85% Ag, 10% Sn, 5% Ge; 95-98% Ag, 2-5% Ge; 5-80% Ag, 5-16% Si and the balance Sn, Pb, or Ge. A molybdenum contact plate for use in PN junction rectifiers is coated with nickel phosphide by immersion for 5-30 minutes in an aqueous solution containing 0.02 mole/litre of nickel sulphate, .07 mole/litre of nickel chloride and 0.225 mole/litre of sodium hypophosphite. The coated plate is then heated at 1200 DEG C. for 15 minutes and afterwards silver plated in a silver cyanide electro-plating solution. Specification 741,504 is referred to.
GB13826/56A 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices Expired GB832067A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US507312A US2763822A (en) 1955-05-10 1955-05-10 Silicon semiconductor devices
US525595A US2801375A (en) 1955-08-01 1955-08-01 Silicon semiconductor devices and processes for making them

Publications (1)

Publication Number Publication Date
GB832067A true GB832067A (en) 1960-04-06

Family

ID=27055794

Family Applications (2)

Application Number Title Priority Date Filing Date
GB13826/56A Expired GB832067A (en) 1955-05-10 1956-05-04 Improvements in or relating to semiconductor devices
GB23230/56A Expired GB823559A (en) 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB23230/56A Expired GB823559A (en) 1955-05-10 1956-07-27 Improvements in or relating to silicon semiconductor devices

Country Status (6)

Country Link
BE (2) BE550001A (en)
CH (2) CH350720A (en)
DE (2) DE1050450B (en)
FR (2) FR1153475A (en)
GB (2) GB832067A (en)
NL (2) NL208617A (en)

Cited By (2)

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Publication number Priority date Publication date Assignee Title
WO1994013012A1 (en) * 1992-11-24 1994-06-09 Asea Brown Boveri Ab Device for cooling sheet elements for power electronics
CN104070295A (en) * 2013-03-29 2014-10-01 三菱综合材料株式会社 Solder powder, solder paste using the powder, electronic part installation method

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DE1285068B (en) * 1957-01-11 1968-12-12 Siemens Ag Alloy contact on semiconductor crystals provided with a gold layer
NL243222A (en) * 1958-09-10 1900-01-01
NL242265A (en) * 1958-09-30 1900-01-01
NL239127A (en) * 1959-05-12
DE1233949B (en) * 1959-07-13 1967-02-09 Siemens Ag Method for producing a semiconductor rectifier arrangement with a single-crystal semiconductor body
NL249694A (en) * 1959-12-30
DE1113519B (en) * 1960-02-25 1961-09-07 Bosch Gmbh Robert Silicon rectifier for high currents
NL260951A (en) * 1960-03-07
DE1153461B (en) * 1960-06-23 1963-08-29 Siemens Ag Semiconductor device
DE1141029B (en) * 1960-06-23 1962-12-13 Siemens Ag Semiconductor device and method for its manufacture
NL269346A (en) * 1960-09-20
DE1133834B (en) * 1960-09-21 1962-07-26 Siemens Ag Silicon rectifier and process for its manufacture
NL270339A (en) * 1960-10-20
DE1229649B (en) * 1961-08-10 1966-12-01 Siemens Ag Method for producing a semiconductor element and semiconductor arrangement with a semiconductor element produced by this method
DE1240187B (en) * 1961-08-10 1967-05-11 Siemens Ag Process for creating a lock-free contact by alloying aluminum
DE1246129B (en) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Method for manufacturing a semiconductor component
DE1185731B (en) * 1962-03-28 1965-01-21 Siemens Ag Semiconductor element with pn transition
DE1295697B (en) * 1962-05-23 1969-05-22 Walter Brandt Gmbh Semiconductor component and method for its manufacture
US3368120A (en) * 1965-03-22 1968-02-06 Gen Electric Multilayer contact system for semiconductor devices
DE1483298B1 (en) * 1965-06-11 1971-01-28 Siemens Ag Electrical contact arrangement between a germanium-silicon semiconductor body and a contact piece and method for producing the same
FR2046593A5 (en) * 1970-04-30 1971-03-05 Silec Semi Conducteurs
GB2031223A (en) * 1978-09-22 1980-04-16 Gen Instrument Corp Method for bonding a refractory metal contact member to a semiconductor body
DE102015108056A1 (en) 2015-05-21 2016-11-24 Osram Opto Semiconductors Gmbh Optoelectronic semiconductor component, optoelectronic assembly and method for producing an optoelectronic semiconductor component
CN112186044A (en) * 2020-09-30 2021-01-05 中国振华集团永光电子有限公司（国营第八七三厂） Glass passivation entity encapsulation low-voltage diode and manufacturing method thereof

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US2220961A (en) * 1937-11-06 1940-11-12 Bell Telephone Labor Inc Soldering alloy
US2555001A (en) * 1947-02-04 1951-05-29 Bell Telephone Labor Inc Bonded article and method of bonding
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
DE872602C (en) * 1951-03-20 1953-04-02 Siemens Ag Method of fastening semiconductors
NL91163C (en) * 1952-09-16
NL104654C (en) * 1952-12-31 1900-01-01
GB8817261D0 (en) * 1988-07-20 1988-08-24 Sperry Sun Inc Down-hole bearing assemblies for maintaining survey instrument assembly & core barrel orientation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994013012A1 (en) * 1992-11-24 1994-06-09 Asea Brown Boveri Ab Device for cooling sheet elements for power electronics
CN104070295A (en) * 2013-03-29 2014-10-01 三菱综合材料株式会社 Solder powder, solder paste using the powder, electronic part installation method

Also Published As

Publication number Publication date
CH350720A (en) 1960-12-15
GB823559A (en) 1959-11-11
FR1157057A (en) 1958-05-27
NL109558C (en) 1900-01-01
BE550001A (en) 1956-08-31
FR1153475A (en) 1958-03-11
NL208617A (en) 1900-01-01
CH367896A (en) 1963-03-15
DE1050450B (en) 1959-02-12
DE1292260B (en) 1969-04-10
BE547698A (en) 1900-01-01

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