GB2570796B - Display device - Google Patents
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- Publication number
- GB2570796B GB2570796B GB1820727.4A GB201820727A GB2570796B GB 2570796 B GB2570796 B GB 2570796B GB 201820727 A GB201820727 A GB 201820727A GB 2570796 B GB2570796 B GB 2570796B
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- GB
- United Kingdom
- Prior art keywords
- display device
- display
- Prior art date
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Classifications
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
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- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
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- H—ELECTRICITY
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
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- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170175053A KR102173434B1 (ko) | 2017-12-19 | 2017-12-19 | 표시 장치 |
Publications (3)
Publication Number | Publication Date |
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GB201820727D0 GB201820727D0 (en) | 2019-01-30 |
GB2570796A GB2570796A (en) | 2019-08-07 |
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KR102637791B1 (ko) * | 2018-02-13 | 2024-02-19 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN111490068B (zh) * | 2019-01-29 | 2022-07-26 | 京东方科技集团股份有限公司 | 显示面板及其制造方法、显示装置 |
JP7475327B2 (ja) | 2019-03-12 | 2024-04-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
CN110379823B (zh) * | 2019-07-24 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及oled显示面板 |
KR20210027641A (ko) * | 2019-08-30 | 2021-03-11 | 삼성디스플레이 주식회사 | 표시패널 |
CN110649040B (zh) | 2019-09-19 | 2022-04-26 | 武汉华星光电半导体显示技术有限公司 | 阵列基板 |
CN110707100B (zh) * | 2019-10-16 | 2021-12-31 | 友达光电(昆山)有限公司 | 显示面板 |
CN111261801A (zh) * | 2020-02-12 | 2020-06-09 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及显示面板 |
KR20210109083A (ko) | 2020-02-26 | 2021-09-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111509022B (zh) * | 2020-04-30 | 2023-04-18 | 京东方科技集团股份有限公司 | 柔性显示面板及其制备方法和显示装置 |
KR20220002795A (ko) | 2020-06-30 | 2022-01-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102675926B1 (ko) * | 2020-06-30 | 2024-06-17 | 엘지디스플레이 주식회사 | 표시장치 |
CN111933681A (zh) * | 2020-09-07 | 2020-11-13 | 深圳市华星光电半导体显示技术有限公司 | 顶发光amoled显示面板、制作方法以及显示装置 |
CN114586155A (zh) * | 2020-09-30 | 2022-06-03 | 京东方科技集团股份有限公司 | 显示基板、显示面板和显示装置 |
CN112802858B (zh) * | 2021-01-13 | 2023-11-28 | 武汉华星光电半导体显示技术有限公司 | 显示装置及显示装置的制备方法 |
CN116097924A (zh) * | 2021-03-11 | 2023-05-09 | 京东方科技集团股份有限公司 | 阵列基板及其显示面板和显示装置 |
CN113096582B (zh) * | 2021-04-16 | 2022-07-22 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
KR20230103661A (ko) * | 2021-12-31 | 2023-07-07 | 엘지디스플레이 주식회사 | 표시패널 및 표시장치 |
KR20240080609A (ko) * | 2022-11-30 | 2024-06-07 | 엘지디스플레이 주식회사 | 표시 장치 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1727207A2 (en) * | 2005-05-28 | 2006-11-29 | Samsung SDI Co., Ltd. | Flat panel display |
US20150097172A1 (en) * | 2013-10-08 | 2015-04-09 | Lg Display Co., Ltd. | Display device and method for manufacturing the same |
US20160087022A1 (en) * | 2014-09-24 | 2016-03-24 | Apple Inc. | Silicon and Semiconducting Oxide Thin-Film Transistor Displays |
US20170194405A1 (en) * | 2015-08-13 | 2017-07-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Organic light emitting display and method of manufacturing the same |
Family Cites Families (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100980008B1 (ko) * | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
KR100885842B1 (ko) * | 2002-08-08 | 2009-02-27 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시소자 및 그 제조방법 |
JP3772889B2 (ja) | 2003-05-19 | 2006-05-10 | セイコーエプソン株式会社 | 電気光学装置およびその駆動装置 |
JP2007093686A (ja) * | 2005-09-27 | 2007-04-12 | Mitsubishi Electric Corp | 液晶表示装置及びその製造方法 |
KR101048965B1 (ko) | 2009-01-22 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 유기 전계발광 표시장치 |
JP2011209405A (ja) | 2010-03-29 | 2011-10-20 | Sony Corp | 表示装置及び電子機器 |
KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR101924605B1 (ko) | 2011-12-16 | 2018-12-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR102097150B1 (ko) * | 2013-02-01 | 2020-04-03 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
KR102066087B1 (ko) * | 2013-05-28 | 2020-01-15 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US9876064B2 (en) * | 2013-08-30 | 2018-01-23 | Lg Display Co., Ltd. | Flexible organic electroluminescent device and method for fabricating the same |
KR102086644B1 (ko) * | 2013-12-31 | 2020-03-09 | 엘지디스플레이 주식회사 | 플렉서블표시장치 및 이의 제조방법 |
KR102302802B1 (ko) * | 2014-02-24 | 2021-09-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판을 포함하는 표시장치 |
KR102397873B1 (ko) * | 2014-02-24 | 2022-05-16 | 엘지디스플레이 주식회사 | 표시장치 |
US9276050B2 (en) | 2014-02-25 | 2016-03-01 | Lg Display Co., Ltd. | Organic light emitting display device |
KR102180067B1 (ko) * | 2014-08-07 | 2020-11-17 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 |
KR102467574B1 (ko) * | 2014-08-29 | 2022-11-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
CN105390504B (zh) | 2014-08-29 | 2019-02-01 | 乐金显示有限公司 | 薄膜晶体管基板及使用它的显示装置 |
JP6253103B2 (ja) | 2014-09-03 | 2017-12-27 | 日本電信電話株式会社 | 浸水検知センサおよび浸水検知方法 |
US9349758B2 (en) | 2014-09-30 | 2016-05-24 | Lg Display Co., Ltd. | Flexible display device with divided power lines and manufacturing method for the same |
US9472605B2 (en) * | 2014-11-17 | 2016-10-18 | Apple Inc. | Organic light-emitting diode display with enhanced aperture ratio |
US9397124B2 (en) * | 2014-12-03 | 2016-07-19 | Apple Inc. | Organic light-emitting diode display with double gate transistors |
US9356087B1 (en) | 2014-12-10 | 2016-05-31 | Lg Display Co., Ltd. | Flexible display device with bridged wire traces |
KR102405257B1 (ko) | 2015-01-28 | 2022-06-03 | 삼성디스플레이 주식회사 | 표시 장치 |
US10664020B2 (en) * | 2015-04-23 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
KR102408898B1 (ko) | 2015-06-19 | 2022-06-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
KR102381285B1 (ko) | 2015-08-06 | 2022-03-31 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 이의 제조 방법 |
KR102455318B1 (ko) | 2015-10-30 | 2022-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102490891B1 (ko) | 2015-12-04 | 2023-01-25 | 삼성디스플레이 주식회사 | 표시 장치 |
US9793334B2 (en) | 2015-12-31 | 2017-10-17 | Lg Display Co., Ltd. | Electronic device with flexible display panel including polarization layer with undercut portion and micro-coating layer |
JP6692645B2 (ja) | 2016-01-15 | 2020-05-13 | 株式会社ジャパンディスプレイ | 半導体装置 |
TWI740908B (zh) * | 2016-03-11 | 2021-10-01 | 南韓商三星顯示器有限公司 | 顯示設備 |
KR102639568B1 (ko) * | 2016-03-11 | 2024-02-26 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조 방법 |
KR102505879B1 (ko) * | 2016-03-24 | 2023-03-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102514411B1 (ko) * | 2016-03-31 | 2023-03-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
JP6756508B2 (ja) | 2016-04-04 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
US10468434B2 (en) * | 2016-04-08 | 2019-11-05 | Innolux Corporation | Hybrid thin film transistor structure, display device, and method of making the same |
US10141387B2 (en) | 2016-04-08 | 2018-11-27 | Innolux Corporation | Display device |
DE102016004332B4 (de) | 2016-04-13 | 2019-10-31 | J. Schneider Elektrotechnik Gmbh | Stromversorgung, insbesondere zum Betreiben eines Plasmas |
KR102572722B1 (ko) * | 2016-05-11 | 2023-09-01 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
US10217802B2 (en) | 2016-05-31 | 2019-02-26 | Lg Display Co., Ltd. | Organic light-emitting display device with high resolution and high definition |
KR20180071538A (ko) * | 2016-12-20 | 2018-06-28 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
KR20180076661A (ko) * | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
KR101865007B1 (ko) * | 2017-12-01 | 2018-06-05 | 엘지디스플레이 주식회사 | 플렉서블표시장치 |
KR102126552B1 (ko) * | 2017-12-19 | 2020-06-24 | 엘지디스플레이 주식회사 | 표시 장치 |
JP7455773B2 (ja) | 2021-03-17 | 2024-03-26 | 株式会社東芝 | 求解装置およびプログラム |
-
2017
- 2017-12-19 KR KR1020170175053A patent/KR102173434B1/ko active IP Right Grant
-
2018
- 2018-11-30 US US16/206,802 patent/US11004923B2/en active Active
- 2018-12-07 CN CN202311192159.3A patent/CN117202705A/zh active Pending
- 2018-12-07 CN CN202311189371.4A patent/CN117202703A/zh active Pending
- 2018-12-07 CN CN201811494524.5A patent/CN110034159B/zh active Active
- 2018-12-12 JP JP2018232979A patent/JP6876670B2/ja active Active
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-
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- 2024-04-11 US US18/633,027 patent/US20240260317A1/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1727207A2 (en) * | 2005-05-28 | 2006-11-29 | Samsung SDI Co., Ltd. | Flat panel display |
US20150097172A1 (en) * | 2013-10-08 | 2015-04-09 | Lg Display Co., Ltd. | Display device and method for manufacturing the same |
US20160087022A1 (en) * | 2014-09-24 | 2016-03-24 | Apple Inc. | Silicon and Semiconducting Oxide Thin-Film Transistor Displays |
US20170194405A1 (en) * | 2015-08-13 | 2017-07-06 | Shenzhen China Star Optoelectronics Technology Co., Ltd. | Organic light emitting display and method of manufacturing the same |
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US20210225978A1 (en) | 2021-07-22 |
JP2022191221A (ja) | 2022-12-27 |
JP2023156286A (ja) | 2023-10-24 |
CN117202705A (zh) | 2023-12-08 |
JP2019109509A (ja) | 2019-07-04 |
KR102173434B1 (ko) | 2020-11-03 |
JP7140874B2 (ja) | 2022-09-21 |
JP7511723B2 (ja) | 2024-07-05 |
CN117202703A (zh) | 2023-12-08 |
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