JP6876670B2 - 表示装置 - Google Patents
表示装置 Download PDFInfo
- Publication number
- JP6876670B2 JP6876670B2 JP2018232979A JP2018232979A JP6876670B2 JP 6876670 B2 JP6876670 B2 JP 6876670B2 JP 2018232979 A JP2018232979 A JP 2018232979A JP 2018232979 A JP2018232979 A JP 2018232979A JP 6876670 B2 JP6876670 B2 JP 6876670B2
- Authority
- JP
- Japan
- Prior art keywords
- display device
- electrode
- layer
- semiconductor layer
- supply line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000010410 layer Substances 0.000 claims description 262
- 239000010408 film Substances 0.000 claims description 138
- 239000004065 semiconductor Substances 0.000 claims description 93
- 239000011229 interlayer Substances 0.000 claims description 72
- 239000000758 substrate Substances 0.000 claims description 58
- 238000003860 storage Methods 0.000 claims description 54
- 239000010409 thin film Substances 0.000 claims description 52
- 238000005452 bending Methods 0.000 claims description 48
- 239000000463 material Substances 0.000 claims description 23
- 230000001681 protective effect Effects 0.000 claims description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 21
- 229910004205 SiNX Inorganic materials 0.000 claims description 17
- 239000003990 capacitor Substances 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000000034 method Methods 0.000 description 22
- 230000008569 process Effects 0.000 description 19
- 238000004519 manufacturing process Methods 0.000 description 17
- 238000000206 photolithography Methods 0.000 description 14
- 230000000873 masking effect Effects 0.000 description 11
- 238000005530 etching Methods 0.000 description 10
- 239000000126 substance Substances 0.000 description 10
- 239000010949 copper Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000000149 penetrating effect Effects 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 229910052750 molybdenum Inorganic materials 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 229910052804 chromium Inorganic materials 0.000 description 5
- 238000000059 patterning Methods 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229920002492 poly(sulfone) Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000011112 polyethylene naphthalate Substances 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/301—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements flexible foldable or roll-able electronic displays, e.g. thin LCD, OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1251—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs comprising TFTs having a different architecture, e.g. top- and bottom gate TFTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/126—Shielding, e.g. light-blocking means over the TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
- H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78651—Silicon transistors
- H01L29/7866—Non-monocrystalline silicon transistors
- H01L29/78672—Polycrystalline or microcrystalline silicon transistor
- H01L29/78675—Polycrystalline or microcrystalline silicon transistor with normal-type structure, e.g. with top gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/341—Short-circuit prevention
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/352—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels the areas of the RGB subpixels being different
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
- H10K59/353—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels characterised by the geometrical arrangement of the RGB subpixels
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Geometry (AREA)
- Ceramic Engineering (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Theoretical Computer Science (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
Description
104 酸化物半導体層
106、156 ソース電極
108、158 ドレイン電極
130 発光素子
154 多結晶半導体層
162 低電位供給ライン
172 高電位供給ライン
176、LK 信号リンク
180 ストレージキャパシタ
192、194 開口部
Claims (28)
- アクティブ領域及びベンディング領域を有する基板と、
前記アクティブ領域に配置され、第1半導体層、第1ゲート電極、第1ソース電極及び第1ドレイン電極を有する第1薄膜トランジスタと、
前記アクティブ領域に配置され、第2半導体層、第2ゲート電極、第2ソース電極及び第2ドレイン電極を有する第2薄膜トランジスタと、
前記基板と前記第2薄膜トランジスタとの間に配置され、各々が前記ベンディング領域内の側面を有する、複数の絶縁層と、
前記第1及び第2薄膜トランジスタ上に配置される無機絶縁素材の保護膜と、
前記基板上に配置される第1平坦化層と、
上部ストレージ電極及び下部ストレージ電極を有するストレージキャパシタとを含み、
前記基板は、前記アクティブ領域より前記ベンディング領域において薄い部分を有し、
前記第1平坦化層は、前記基板の薄い部分及び前記複数の絶縁層の側面に接触する、表示装置。 - 前記下部ストレージ電極は前記第1薄膜トランジスタの第1ゲート電極と同一平面上に同一素材で形成される、請求項1に記載の表示装置。
- 前記複数の絶縁層は、前記第1半導体層及び前記第2半導体層の間に配置される第1及び第2下部層間絶縁膜を含む、請求項1に記載の表示装置。
- 前記第2半導体層と重畳する遮光層をさらに含む、請求項3に記載の表示装置。
- 前記ストレージキャパシタの前記上部ストレージ電極は前記遮光層と同一層上に同一素材で形成される、請求項4に記載の表示装置。
- 前記複数の絶縁層は、前記第2下部層間絶縁膜及び上部バッファー層を含み、前記第2下部層間絶縁膜及び上部バッファー層は、前記遮光層と前記第2半導体層の間に配置される、請求項4に記載の表示装置。
- 前記上部バッファー層は酸化シリコン(SiOx)から形成され、前記第2下部層間絶縁膜は窒化シリコン(SiNx)から形成される、請求項6に記載の表示装置。
- 前記第1ソース及び第1ドレイン電極は前記第2ソース及び第2ドレイン電極と同一平面上に、前記第2ソース及び第2ドレイン電極と同一素材で形成される、請求項3に記載の表示装置。
- 前記第1半導体層は多結晶半導体層からなり、前記第2半導体層は酸化物半導体層からなる、請求項8に記載の表示装置。
- 前記アクティブ領域に配置される多数のコンタクトホールをさらに含む、請求項9に記載の表示装置。
- 前記第1薄膜トランジスタは、
前記多結晶半導体層と重畳する第1ゲート電極と、前記多数のコンタクトホールのうち第1ソースコンタクトホールを介して前記多結晶半導体層と接触する第1ソース電極と、前記多数のコンタクトホールのうち第1ドレインコンタクトホールを介して前記多結晶半導体層と接触する第1ドレイン電極とを含み、
前記第2薄膜トランジスタは、
前記酸化物半導体層と重畳する第2ゲート電極と、前記多数のコンタクトホールのうち第2ソースコンタクトホールを介して前記酸化物半導体層と接触する第2ソース電極と、前記多数のコンタクトホールのうち第2ドレインコンタクトホールを介して前記酸化物半導体層と接触する第2ドレイン電極とを含み、
前記第1及び第2ソース電極は前記第1及び第2ドレイン電極と同一平面上に、前記第1及び第2ドレイン電極と同一素材で形成される、請求項10に記載の表示装置。 - 前記複数の絶縁層は、
前記第2ソース及び第2ドレイン電極のそれぞれと前記酸化物半導体層の間に配置される上部層間絶縁膜と、
前記多結晶半導体層と前記酸化物半導体層の間に順次積層される下部ゲート絶縁膜、第1下部層間絶縁膜、第2下部層間絶縁膜及び上部バッファー層とを含み、
前記第1ソース及び第1ドレインコンタクトホールは、前記下部ゲート絶縁膜、前記第1下部層間絶縁膜、前記第2下部層間絶縁膜、前記上部バッファー層及び前記上部層間絶縁膜を貫通して前記多結晶半導体層を露出させ、
前記第2ソース及び第2ドレインコンタクトホールは前記上部層間絶縁膜を貫通して前記酸化物半導体層を露出させる、請求項10に記載の表示装置。 - 前記下部ストレージ電極は前記下部ゲート絶縁膜上に配置され、
前記上部ストレージ電極は前記第1下部層間絶縁膜を挟んで前記下部ストレージ電極と重畳する、請求項12に記載の表示装置。 - 前記ベンディング領域に配置され、前記多数のコンタクトホールの少なくとも一つと同一の深さを有する少なくとも一つの開口部をさらに含む、請求項13に記載の表示装置。
- 前記少なくとも一つの開口部は、
前記第2ソース及び第2ドレインコンタクトホールと同一の深さを有する第1開口部と、
前記第1ソース及び第1ドレインコンタクトホールより深い深さを有する第2開口部とを含む、請求項14に記載の表示装置。 - 前記複数の絶縁層は、
前記基板上に配置されるマルチバッファー層と、
前記マルチバッファー層上に配置される下部バッファー層とを含み、
前記第1開口部は、前記ベンディング領域に配置される前記上部層間絶縁膜を貫通し、
前記第2開口部は、前記ベンディング領域に配置される前記マルチバッファー層、前記下部バッファー層、前記下部ゲート絶縁膜、前記第1下部層間絶縁膜、前記第2下部層間絶縁膜及び前記上部バッファー層を貫通し、
前記ベンディング領域の基板は前記少なくとも一つの開口部によって露出される、請求項15に記載の表示装置。 - 前記第1ソース電極及び第1ドレイン電極と前記第2ソース及び第2ドレイン電極は前記上部層間絶縁膜上に配置される、請求項12に記載の表示装置。
- 前記第1及び第2薄膜トランジスタのいずれか一つと接続される高電位供給ラインと、
前記保護膜を挟んで前記高電位供給ラインと重畳する低電位供給ラインとをさらに含む、請求項14に記載の表示装置。 - 前記第2薄膜トランジスタと接続されるアノード電極と前記低電位供給ラインと接続されるカソード電極とを含む有機発光素子をさらに含み、
前記低電位供給ライン及び前記高電位供給ラインの少なくとも一つはメッシュ状に配置される、請求項18に記載の表示装置。 - 前記第1平坦化層上に配置され、前記第2薄膜トランジスタと前記アノード電極を連結する画素連結電極と、
前記画素連結電極を覆うように配置される第2平坦化層とをさらに含み、
前記第1平坦化層は、前記上部層間絶縁膜上に配置される、請求項19に記載の表示装置。 - 前記低電位供給ラインは、
互いに交差する第1及び第2低電位供給ラインを含み、
前記高電位供給ラインは、
前記第1低電位供給ラインに平行な第1高電位供給ラインと、
前記保護膜及び前記第1平坦化層を挟んで前記第2低電位供給ラインと重畳する第2高電位供給ラインとを含む、請求項20に記載の表示装置。 - 前記第2低電位供給ラインは前記画素連結電極と同一平面上に同一素材で形成され、
前記第2高電位供給ラインは前記第2ソース及び第2ドレイン電極と同一平面上に同一素材で形成される、請求項21に記載の表示装置。 - 前記アクティブ領域に配置される信号ラインと接続され、前記開口部によって露出された前記ベンディング領域に配置される信号リンクをさらに含む、請求項22に記載の表示装置。
- 前記開口部によって露出された前記ベンディング領域の前記基板上に、前記基板と接触するように配置され、前記第1及び第2ソース電極と同一素材で形成され信号リンクをさらに含み、
前記第1及び第2平坦化層は前記信号リンクを覆うように配置される、請求項23に記載の表示装置。 - 前記信号リンクは前記開口部によって露出された前記ベンディング領域の前記第1平坦化層上に配置され、前記画素連結電極と同一素材で形成され、
前記第2平坦化層は前記信号リンクを覆うように配置される、請求項23に記載の表示装置。 - 前記有機発光素子を駆動する画素駆動回路をさらに含み、
前記画素駆動回路は、
前記第2薄膜トランジスタからなる駆動トランジスタと、
前記駆動トランジスタと接続され、前記第1薄膜トランジスタからなるスイッチングトランジスタとを含む、請求項19に記載の表示装置。 - 前記画素駆動回路は、
前記第2薄膜トランジスタからなり、前記スイッチングトランジスタと接続された第2スイッチングトランジスタと、
前記第1薄膜トランジスタからなり、前記駆動トランジスタと接続された第3スイッチングトランジスタとさらに含む、請求項26に記載の表示装置。 - 前記ベンディング領域に配置される少なくとも一つの開口部を含み、前記開口部は前記基板の一部を除去することにより形成される、請求項1に記載の表示装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021073985A JP7140874B2 (ja) | 2017-12-19 | 2021-04-26 | 表示装置 |
JP2022142914A JP7314380B2 (ja) | 2017-12-19 | 2022-09-08 | 表示装置 |
JP2023114542A JP7511723B2 (ja) | 2017-12-19 | 2023-07-12 | 表示装置 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2017-0175053 | 2017-12-19 | ||
KR1020170175053A KR102173434B1 (ko) | 2017-12-19 | 2017-12-19 | 표시 장치 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021073985A Division JP7140874B2 (ja) | 2017-12-19 | 2021-04-26 | 表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2019109509A JP2019109509A (ja) | 2019-07-04 |
JP6876670B2 true JP6876670B2 (ja) | 2021-05-26 |
Family
ID=65147335
Family Applications (4)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2018232979A Active JP6876670B2 (ja) | 2017-12-19 | 2018-12-12 | 表示装置 |
JP2021073985A Active JP7140874B2 (ja) | 2017-12-19 | 2021-04-26 | 表示装置 |
JP2022142914A Active JP7314380B2 (ja) | 2017-12-19 | 2022-09-08 | 表示装置 |
JP2023114542A Active JP7511723B2 (ja) | 2017-12-19 | 2023-07-12 | 表示装置 |
Family Applications After (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021073985A Active JP7140874B2 (ja) | 2017-12-19 | 2021-04-26 | 表示装置 |
JP2022142914A Active JP7314380B2 (ja) | 2017-12-19 | 2022-09-08 | 表示装置 |
JP2023114542A Active JP7511723B2 (ja) | 2017-12-19 | 2023-07-12 | 表示装置 |
Country Status (6)
Country | Link |
---|---|
US (4) | US11004923B2 (ja) |
JP (4) | JP6876670B2 (ja) |
KR (1) | KR102173434B1 (ja) |
CN (3) | CN110034159B (ja) |
DE (1) | DE102018132095A1 (ja) |
GB (1) | GB2570796B (ja) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102637791B1 (ko) * | 2018-02-13 | 2024-02-19 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
CN111490068B (zh) * | 2019-01-29 | 2022-07-26 | 京东方科技集团股份有限公司 | 显示面板及其制造方法、显示装置 |
JP7475327B2 (ja) | 2019-03-12 | 2024-04-26 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
CN110379823B (zh) * | 2019-07-24 | 2021-01-01 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及oled显示面板 |
KR20210027641A (ko) | 2019-08-30 | 2021-03-11 | 삼성디스플레이 주식회사 | 표시패널 |
CN110649040B (zh) * | 2019-09-19 | 2022-04-26 | 武汉华星光电半导体显示技术有限公司 | 阵列基板 |
CN110707100B (zh) * | 2019-10-16 | 2021-12-31 | 友达光电(昆山)有限公司 | 显示面板 |
CN111261801A (zh) * | 2020-02-12 | 2020-06-09 | 武汉华星光电半导体显示技术有限公司 | 一种阵列基板及显示面板 |
KR20210109083A (ko) | 2020-02-26 | 2021-09-06 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111509022B (zh) * | 2020-04-30 | 2023-04-18 | 京东方科技集团股份有限公司 | 柔性显示面板及其制备方法和显示装置 |
KR20220002795A (ko) | 2020-06-30 | 2022-01-07 | 삼성디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102675926B1 (ko) * | 2020-06-30 | 2024-06-17 | 엘지디스플레이 주식회사 | 표시장치 |
CN111933681A (zh) | 2020-09-07 | 2020-11-13 | 深圳市华星光电半导体显示技术有限公司 | 顶发光amoled显示面板、制作方法以及显示装置 |
WO2022067698A1 (zh) * | 2020-09-30 | 2022-04-07 | 京东方科技集团股份有限公司 | 显示基板、显示面板和显示装置 |
CN112802858B (zh) * | 2021-01-13 | 2023-11-28 | 武汉华星光电半导体显示技术有限公司 | 显示装置及显示装置的制备方法 |
CN116097924A (zh) * | 2021-03-11 | 2023-05-09 | 京东方科技集团股份有限公司 | 阵列基板及其显示面板和显示装置 |
CN113096582B (zh) * | 2021-04-16 | 2022-07-22 | 武汉天马微电子有限公司 | 一种显示面板及显示装置 |
KR20230103661A (ko) * | 2021-12-31 | 2023-07-07 | 엘지디스플레이 주식회사 | 표시패널 및 표시장치 |
KR20240080609A (ko) * | 2022-11-30 | 2024-06-07 | 엘지디스플레이 주식회사 | 표시 장치 |
Family Cites Families (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100980008B1 (ko) * | 2002-01-02 | 2010-09-03 | 삼성전자주식회사 | 배선 구조, 이를 이용하는 박막 트랜지스터 기판 및 그제조 방법 |
KR100885842B1 (ko) * | 2002-08-08 | 2009-02-27 | 엘지디스플레이 주식회사 | 유기 전계 발광 표시소자 및 그 제조방법 |
JP3772889B2 (ja) | 2003-05-19 | 2006-05-10 | セイコーエプソン株式会社 | 電気光学装置およびその駆動装置 |
US7652291B2 (en) | 2005-05-28 | 2010-01-26 | Samsung Mobile Display Co., Ltd. | Flat panel display |
JP2007093686A (ja) * | 2005-09-27 | 2007-04-12 | Mitsubishi Electric Corp | 液晶表示装置及びその製造方法 |
KR101048965B1 (ko) | 2009-01-22 | 2011-07-12 | 삼성모바일디스플레이주식회사 | 유기 전계발광 표시장치 |
JP2011209405A (ja) * | 2010-03-29 | 2011-10-20 | Sony Corp | 表示装置及び電子機器 |
KR102072244B1 (ko) * | 2011-11-30 | 2020-01-31 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
KR101924605B1 (ko) | 2011-12-16 | 2018-12-04 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 및 그 제조방법 |
KR102097150B1 (ko) | 2013-02-01 | 2020-04-03 | 엘지디스플레이 주식회사 | 플렉서블 디스플레이 기판, 플렉서블 유기 발광 표시 장치 및 플렉서블 유기 발광 표시 장치 제조 방법 |
KR102066087B1 (ko) * | 2013-05-28 | 2020-01-15 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그의 제조방법 |
US9818765B2 (en) | 2013-08-26 | 2017-11-14 | Apple Inc. | Displays with silicon and semiconducting oxide thin-film transistors |
US9876064B2 (en) | 2013-08-30 | 2018-01-23 | Lg Display Co., Ltd. | Flexible organic electroluminescent device and method for fabricating the same |
KR102137392B1 (ko) | 2013-10-08 | 2020-07-24 | 엘지디스플레이 주식회사 | 표시 장치 및 그 제조 방법 |
KR102086644B1 (ko) * | 2013-12-31 | 2020-03-09 | 엘지디스플레이 주식회사 | 플렉서블표시장치 및 이의 제조방법 |
KR102397873B1 (ko) * | 2014-02-24 | 2022-05-16 | 엘지디스플레이 주식회사 | 표시장치 |
KR102326408B1 (ko) * | 2014-02-24 | 2021-11-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
US9276050B2 (en) | 2014-02-25 | 2016-03-01 | Lg Display Co., Ltd. | Organic light emitting display device |
KR102180067B1 (ko) * | 2014-08-07 | 2020-11-17 | 엘지디스플레이 주식회사 | 박막트랜지스터 어레이 기판 |
CN105390504B (zh) | 2014-08-29 | 2019-02-01 | 乐金显示有限公司 | 薄膜晶体管基板及使用它的显示装置 |
KR102467574B1 (ko) * | 2014-08-29 | 2022-11-18 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
JP6253103B2 (ja) | 2014-09-03 | 2017-12-27 | 日本電信電話株式会社 | 浸水検知センサおよび浸水検知方法 |
US9543370B2 (en) * | 2014-09-24 | 2017-01-10 | Apple Inc. | Silicon and semiconducting oxide thin-film transistor displays |
US9349758B2 (en) | 2014-09-30 | 2016-05-24 | Lg Display Co., Ltd. | Flexible display device with divided power lines and manufacturing method for the same |
US9472605B2 (en) * | 2014-11-17 | 2016-10-18 | Apple Inc. | Organic light-emitting diode display with enhanced aperture ratio |
US9397124B2 (en) * | 2014-12-03 | 2016-07-19 | Apple Inc. | Organic light-emitting diode display with double gate transistors |
US9356087B1 (en) | 2014-12-10 | 2016-05-31 | Lg Display Co., Ltd. | Flexible display device with bridged wire traces |
KR102405257B1 (ko) | 2015-01-28 | 2022-06-03 | 삼성디스플레이 주식회사 | 표시 장치 |
US10664020B2 (en) * | 2015-04-23 | 2020-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
KR102408898B1 (ko) | 2015-06-19 | 2022-06-16 | 엘지디스플레이 주식회사 | 박막 트랜지스터 기판 및 이를 이용한 표시장치 |
KR102381285B1 (ko) | 2015-08-06 | 2022-03-31 | 삼성디스플레이 주식회사 | 가요성 표시 장치 및 이의 제조 방법 |
CN105161516B (zh) | 2015-08-13 | 2018-10-30 | 深圳市华星光电技术有限公司 | 有机发光显示器及其制造方法 |
KR102455318B1 (ko) | 2015-10-30 | 2022-10-18 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
KR102490891B1 (ko) | 2015-12-04 | 2023-01-25 | 삼성디스플레이 주식회사 | 표시 장치 |
US9793334B2 (en) | 2015-12-31 | 2017-10-17 | Lg Display Co., Ltd. | Electronic device with flexible display panel including polarization layer with undercut portion and micro-coating layer |
JP6692645B2 (ja) | 2016-01-15 | 2020-05-13 | 株式会社ジャパンディスプレイ | 半導体装置 |
TWI740908B (zh) * | 2016-03-11 | 2021-10-01 | 南韓商三星顯示器有限公司 | 顯示設備 |
KR102639568B1 (ko) * | 2016-03-11 | 2024-02-26 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조 방법 |
KR102505879B1 (ko) * | 2016-03-24 | 2023-03-06 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR102514411B1 (ko) | 2016-03-31 | 2023-03-28 | 삼성디스플레이 주식회사 | 디스플레이 장치 및 그 제조방법 |
JP6756508B2 (ja) | 2016-04-04 | 2020-09-16 | 株式会社ジャパンディスプレイ | 表示装置 |
US10468434B2 (en) * | 2016-04-08 | 2019-11-05 | Innolux Corporation | Hybrid thin film transistor structure, display device, and method of making the same |
US10141387B2 (en) | 2016-04-08 | 2018-11-27 | Innolux Corporation | Display device |
DE102016004332B4 (de) | 2016-04-13 | 2019-10-31 | J. Schneider Elektrotechnik Gmbh | Stromversorgung, insbesondere zum Betreiben eines Plasmas |
KR102572722B1 (ko) * | 2016-05-11 | 2023-09-01 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
US10217802B2 (en) | 2016-05-31 | 2019-02-26 | Lg Display Co., Ltd. | Organic light-emitting display device with high resolution and high definition |
KR20180071538A (ko) * | 2016-12-20 | 2018-06-28 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
KR20180076661A (ko) * | 2016-12-28 | 2018-07-06 | 엘지디스플레이 주식회사 | 표시 장치용 기판과 그를 포함하는 표시 장치 |
KR101865007B1 (ko) * | 2017-12-01 | 2018-06-05 | 엘지디스플레이 주식회사 | 플렉서블표시장치 |
KR102126552B1 (ko) * | 2017-12-19 | 2020-06-24 | 엘지디스플레이 주식회사 | 표시 장치 |
JP7455773B2 (ja) | 2021-03-17 | 2024-03-26 | 株式会社東芝 | 求解装置およびプログラム |
-
2017
- 2017-12-19 KR KR1020170175053A patent/KR102173434B1/ko active IP Right Grant
-
2018
- 2018-11-30 US US16/206,802 patent/US11004923B2/en active Active
- 2018-12-07 CN CN201811494524.5A patent/CN110034159B/zh active Active
- 2018-12-07 CN CN202311192159.3A patent/CN117202705A/zh active Pending
- 2018-12-07 CN CN202311189371.4A patent/CN117202703A/zh active Pending
- 2018-12-12 JP JP2018232979A patent/JP6876670B2/ja active Active
- 2018-12-13 DE DE102018132095.7A patent/DE102018132095A1/de active Pending
- 2018-12-19 GB GB1820727.4A patent/GB2570796B/en active Active
-
2021
- 2021-04-09 US US17/227,011 patent/US11489030B2/en active Active
- 2021-04-26 JP JP2021073985A patent/JP7140874B2/ja active Active
-
2022
- 2022-09-08 JP JP2022142914A patent/JP7314380B2/ja active Active
- 2022-09-27 US US17/953,571 patent/US11765937B2/en active Active
-
2023
- 2023-07-05 US US18/218,549 patent/US20230354646A1/en active Granted
- 2023-07-12 JP JP2023114542A patent/JP7511723B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
GB2570796A (en) | 2019-08-07 |
JP7140874B2 (ja) | 2022-09-21 |
KR102173434B1 (ko) | 2020-11-03 |
JP7314380B2 (ja) | 2023-07-25 |
US20210225978A1 (en) | 2021-07-22 |
CN110034159B (zh) | 2023-10-13 |
JP2019109509A (ja) | 2019-07-04 |
US20190189720A1 (en) | 2019-06-20 |
JP2022191221A (ja) | 2022-12-27 |
DE102018132095A1 (de) | 2019-06-19 |
JP7511723B2 (ja) | 2024-07-05 |
CN117202703A (zh) | 2023-12-08 |
US11004923B2 (en) | 2021-05-11 |
US11489030B2 (en) | 2022-11-01 |
KR20190073848A (ko) | 2019-06-27 |
CN117202705A (zh) | 2023-12-08 |
US20230022587A1 (en) | 2023-01-26 |
US20230354646A1 (en) | 2023-11-02 |
CN110034159A (zh) | 2019-07-19 |
US11765937B2 (en) | 2023-09-19 |
GB2570796B (en) | 2020-08-26 |
JP2021131547A (ja) | 2021-09-09 |
GB201820727D0 (en) | 2019-01-30 |
JP2023156286A (ja) | 2023-10-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6876670B2 (ja) | 表示装置 | |
JP6876671B2 (ja) | 表示装置 | |
JP6707118B2 (ja) | 表示装置 | |
JP6951505B2 (ja) | 表示装置 | |
JP6818729B2 (ja) | 表示装置 | |
KR102414597B1 (ko) | 표시 장치 | |
KR102367823B1 (ko) | 표시 장치 | |
KR102501143B1 (ko) | 표시 장치의 제조방법 | |
KR102438783B1 (ko) | 표시 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181213 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20191210 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200310 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20200623 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20200923 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20210330 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20210426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6876670 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE Ref document number: 6876670 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |