CN116097924A - 阵列基板及其显示面板和显示装置 - Google Patents

阵列基板及其显示面板和显示装置 Download PDF

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CN116097924A
CN116097924A CN202180000444.3A CN202180000444A CN116097924A CN 116097924 A CN116097924 A CN 116097924A CN 202180000444 A CN202180000444 A CN 202180000444A CN 116097924 A CN116097924 A CN 116097924A
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transistor
reset
driving
substrate
light
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刘利宾
卢江楠
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BOE Technology Group Co Ltd
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    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • H10K59/12—Active-matrix OLED [AMOLED] displays
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    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
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    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • G09G3/3233—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix with pixel circuitry controlling the current through the light-emitting element
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
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    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
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Abstract

一种阵列基板及其显示面板和显示装置。阵列基板包括：衬底(300)和多个形成在衬底(300)上的子像素，子像素包括像素电路，像素电路包括多个晶体管，多个晶体管包括至少一个氧化物晶体管；其中，阵列基板还包括：氧化物半导体层(340)，形成在衬底(300)上，氧化物半导体层(340)包括氧化物晶体管的沟道区；第一平坦层(108)，形成在衬底(300)上，并覆盖至少部分氧化物半导体层(340)，第一平坦层(108)上具有凹陷区域(108a)，凹陷区域(108a)在衬底(300)上的正投影的至少部分位于氧化物晶体管的沟道区在衬底上的正投影的外侧开设有环形图案，环形图案为环形通孔或环形凹槽，环形图案在衬底上的正投影环绕氧化物晶体管的沟道区在衬底上的正投影；阻挡部(3710)，形成在第一平坦层(108)远离衬底(300)的一侧，阻挡部(3710)在衬底(300)上的正投影的至少部分与覆盖氧化物晶体管的沟道区在衬底上的正投影存在交叠，且阻挡部(3710)在衬底上的正投影与凹陷区域在衬底上的正投影的至少部分存在交叠，且阻挡部(3710)的部分阻挡部填充在环形图案凹陷区域内。该方案可提高产品稳定性。

Description

PCT国内申请，说明书已公开。

Claims (24)

  1. PCT国内申请，权利要求书已公开。
CN202180000444.3A 2021-03-11 2021-03-11 阵列基板及其显示面板和显示装置 Pending CN116097924A (zh)

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EP (1) EP4131411A4 (zh)
JP (1) JP2024512172A (zh)
KR (1) KR20230152650A (zh)
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Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010182819A (ja) 2009-02-04 2010-08-19 Sony Corp 薄膜トランジスタおよび表示装置
JP6076038B2 (ja) 2011-11-11 2017-02-08 株式会社半導体エネルギー研究所 表示装置の作製方法
TW201338173A (zh) 2012-02-28 2013-09-16 Sony Corp 電晶體、製造電晶體之方法、顯示裝置及電子機器
CN205722744U (zh) 2016-03-10 2016-11-23 信利（惠州）智能显示有限公司 一种oled像素驱动电路
CN111540779B (zh) 2016-10-12 2023-01-06 群创光电股份有限公司 发光二极管显示设备
KR20180079577A (ko) * 2016-12-30 2018-07-11 엘지디스플레이 주식회사 표시장치
KR102317419B1 (ko) 2017-06-30 2021-10-25 엘지디스플레이 주식회사 발광 표시 장치
KR102436659B1 (ko) 2017-12-06 2022-08-26 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102173434B1 (ko) * 2017-12-19 2020-11-03 엘지디스플레이 주식회사 표시 장치
CN108493198B (zh) 2018-04-11 2020-11-24 京东方科技集团股份有限公司 阵列基板及其制作方法、有机发光二极管显示装置
CN108767016B (zh) * 2018-05-21 2021-09-21 京东方科技集团股份有限公司 一种薄膜晶体管及其制作方法、阵列基板、显示装置
CN108962967B (zh) * 2018-08-03 2020-06-30 京东方科技集团股份有限公司 显示面板及其制造方法、显示装置及显示控制方法
CN109148489B (zh) 2018-08-30 2022-06-10 合肥鑫晟光电科技有限公司 一种阵列基板及制作方法、显示装置
KR102315554B1 (ko) * 2019-04-09 2021-10-21 한양대학교 산학협력단 수소 확산 방지막을 포함하는 표시 장치 및 그 제조 방법
CN110444553B (zh) 2019-08-14 2021-12-24 京东方科技集团股份有限公司 感光装置及其制造方法、探测基板和阵列基板
CN110690265B (zh) 2019-10-29 2022-07-26 京东方科技集团股份有限公司 一种显示基板及其制作方法、显示装置
EP4053903A4 (en) 2019-10-29 2023-11-08 Boe Technology Group Co., Ltd. DISPLAY SUBSTRATE AND METHOD FOR PRODUCING THE SAME AND DISPLAY DEVICE
CN117542318A (zh) 2020-07-15 2024-02-09 武汉华星光电半导体显示技术有限公司 像素电路及其驱动方法、显示装置
CN212724668U (zh) 2020-07-15 2021-03-16 武汉华星光电半导体显示技术有限公司 像素电路及显示装置
CN112289813B (zh) * 2020-10-29 2022-10-14 湖北长江新型显示产业创新中心有限公司 阵列基板、显示面板及显示装置
CN112289841A (zh) * 2020-10-30 2021-01-29 湖北长江新型显示产业创新中心有限公司 显示面板及显示装置
CN112397025A (zh) 2020-11-24 2021-02-23 合肥维信诺科技有限公司 像素电路及其驱动方法、显示面板
CN112909054A (zh) 2021-01-26 2021-06-04 武汉华星光电半导体显示技术有限公司 像素驱动电路及显示面板

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WO2022188374A9 (en) 2022-11-24
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US20230165069A1 (en) 2023-05-25
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