CN114586155A - 显示基板、显示面板和显示装置 - Google Patents
显示基板、显示面板和显示装置 Download PDFInfo
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- CN114586155A CN114586155A CN202080002207.6A CN202080002207A CN114586155A CN 114586155 A CN114586155 A CN 114586155A CN 202080002207 A CN202080002207 A CN 202080002207A CN 114586155 A CN114586155 A CN 114586155A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 115
- 239000000463 material Substances 0.000 claims abstract description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 36
- 239000010410 layer Substances 0.000 claims description 539
- 239000003990 capacitor Substances 0.000 claims description 80
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- 239000011229 interlayer Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10K59/8791—Arrangements for improving contrast, e.g. preventing reflection of ambient light
- H10K59/8792—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. black layers
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
- H01L29/78633—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device with a light shield
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Abstract
提供一种显示基板、显示面板和显示装置。显示基板包括衬底基板;设置于所述衬底基板的第一晶体管。所述第一晶体管包括第一有源层、第一底栅和第一顶栅,所述第一底栅位于所述衬底基板与所述第一有源层之间,所述第一顶栅位于所述第一有源层远离所述衬底基板的一侧,所述第一有源层、所述第一底栅和所述第一顶栅中的任意两个在所述衬底基板上的正投影彼此至少部分重叠,所述第一底栅和所述第一有源层之间设置有第三栅绝缘层,所述第一有源层包括氧化物半导体材料,所述第三栅绝缘层包括氧化硅材料,所述第一顶栅远离所述衬底基板的表面与所述氧化硅材料直接接触,所述第一有源层靠近所述衬底基板的表面与所述氧化硅材料直接接触。
Description
PCT国内申请,说明书已公开。
Claims (22)
- PCT国内申请,权利要求书已公开。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/CN2020/119472 WO2022067698A1 (zh) | 2020-09-30 | 2020-09-30 | 显示基板、显示面板和显示装置 |
Publications (1)
Publication Number | Publication Date |
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CN114586155A true CN114586155A (zh) | 2022-06-03 |
Family
ID=80949326
Family Applications (1)
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CN202080002207.6A Pending CN114586155A (zh) | 2020-09-30 | 2020-09-30 | 显示基板、显示面板和显示装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20220320212A1 (zh) |
CN (1) | CN114586155A (zh) |
WO (1) | WO2022067698A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024086976A1 (zh) * | 2022-10-24 | 2024-05-02 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102109166B1 (ko) * | 2013-01-15 | 2020-05-12 | 삼성디스플레이 주식회사 | 박막 트랜지스터 및 이를 구비하는 표시 기판 |
KR102366568B1 (ko) * | 2015-06-11 | 2022-02-25 | 삼성디스플레이 주식회사 | 박막트랜지스터 기판 및 이를 구비한 유기 발광 표시 장치 |
KR102629293B1 (ko) * | 2015-11-20 | 2024-01-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 이 반도체 장치의 제작 방법, 또는 이 반도체 장치를 가지는 표시 장치 |
CN105932032A (zh) * | 2016-06-16 | 2016-09-07 | 深圳市华星光电技术有限公司 | 一种阵列基板及其制备方法 |
CN106876412A (zh) * | 2017-03-15 | 2017-06-20 | 厦门天马微电子有限公司 | 一种阵列基板以及制作方法 |
WO2019023962A1 (en) * | 2017-08-02 | 2019-02-07 | Boe Technology Group Co., Ltd. | PIXEL CIRCUIT, ACTIVE MATRIX ORGANIC LIGHT EMITTING DISPLAY PANEL, DISPLAY APPARATUS, AND ATTACK TRANSISTOR THRESHOLD VOLTAGE COMPENSATION METHOD |
KR102173434B1 (ko) * | 2017-12-19 | 2020-11-03 | 엘지디스플레이 주식회사 | 표시 장치 |
CN109817645B (zh) * | 2019-02-18 | 2021-03-16 | 京东方科技集团股份有限公司 | 阵列基板及其制作方法、显示面板、电子设备 |
CN110676253B (zh) * | 2019-09-29 | 2022-03-22 | 厦门天马微电子有限公司 | 一种静电释放电路、阵列基板、显示面板及显示装置 |
KR20210041150A (ko) * | 2019-10-04 | 2021-04-15 | 삼성디스플레이 주식회사 | 표시 장치 |
CN111415948B (zh) * | 2020-03-30 | 2022-11-08 | 厦门天马微电子有限公司 | 阵列基板、显示面板、显示装置及阵列基板的制备方法 |
-
2020
- 2020-09-30 WO PCT/CN2020/119472 patent/WO2022067698A1/zh active Application Filing
- 2020-09-30 US US17/310,405 patent/US20220320212A1/en active Pending
- 2020-09-30 CN CN202080002207.6A patent/CN114586155A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2024086976A1 (zh) * | 2022-10-24 | 2024-05-02 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示装置 |
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WO2022067698A1 (zh) | 2022-04-07 |
US20220320212A1 (en) | 2022-10-06 |
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