US20150097172A1 - Display device and method for manufacturing the same - Google Patents
Display device and method for manufacturing the same Download PDFInfo
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- US20150097172A1 US20150097172A1 US14/500,654 US201414500654A US2015097172A1 US 20150097172 A1 US20150097172 A1 US 20150097172A1 US 201414500654 A US201414500654 A US 201414500654A US 2015097172 A1 US2015097172 A1 US 2015097172A1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 238000000034 method Methods 0.000 title claims description 23
- 239000003990 capacitor Substances 0.000 claims abstract description 142
- 239000000463 material Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 238000009413 insulation Methods 0.000 claims description 158
- 238000003860 storage Methods 0.000 claims description 86
- 239000000758 substrate Substances 0.000 claims description 23
- 238000000059 patterning Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 238
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000004020 conductor Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000002834 transmittance Methods 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 239000011787 zinc oxide Substances 0.000 description 5
- 229960001296 zinc oxide Drugs 0.000 description 5
- 101100489584 Solanum lycopersicum TFT1 gene Proteins 0.000 description 4
- 101100214488 Solanum lycopersicum TFT2 gene Proteins 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical group 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000002355 dual-layer Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GENZLHCFIPDZNJ-UHFFFAOYSA-N [In+3].[O-2].[Mg+2] Chemical compound [In+3].[O-2].[Mg+2] GENZLHCFIPDZNJ-UHFFFAOYSA-N 0.000 description 1
- FDLSOIWNAZCAMB-UHFFFAOYSA-N [O--].[O--].[O--].[Mg++].[Sn+4] Chemical compound [O--].[O--].[O--].[Mg++].[Sn+4] FDLSOIWNAZCAMB-UHFFFAOYSA-N 0.000 description 1
- DZLPZFLXRVRDAE-UHFFFAOYSA-N [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] Chemical compound [O--].[O--].[O--].[O--].[Al+3].[Zn++].[In+3] DZLPZFLXRVRDAE-UHFFFAOYSA-N 0.000 description 1
- VGLYDBMDZXTCJA-UHFFFAOYSA-N aluminum zinc oxygen(2-) tin(4+) Chemical compound [O-2].[Al+3].[Sn+4].[Zn+2] VGLYDBMDZXTCJA-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012774 insulation material Substances 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- YSRUGFMGLKANGO-UHFFFAOYSA-N zinc hafnium(4+) indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[In+3].[Hf+4] YSRUGFMGLKANGO-UHFFFAOYSA-N 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- TYHJXGDMRRJCRY-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) tin(4+) Chemical compound [O-2].[Zn+2].[Sn+4].[In+3] TYHJXGDMRRJCRY-UHFFFAOYSA-N 0.000 description 1
- BNEMLSQAJOPTGK-UHFFFAOYSA-N zinc;dioxido(oxo)tin Chemical compound [Zn+2].[O-][Sn]([O-])=O BNEMLSQAJOPTGK-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1255—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs integrated with passive devices, e.g. auxiliary capacitors
-
- H01L27/3265—
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136213—Storage capacitors associated with the pixel electrode
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
- G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
- G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H01L27/3262—
-
- H01L51/5206—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
Definitions
- the present disclosure is directed to a display device and a method of manufacturing the same, and specifically to a display device that can control stable capacitance of a storage capacitor as the storage capacitor with a smaller size, and a method of manufacturing the same.
- a display device driven in an active-matrix type includes a thin-film transistor in each of sub-pixels, and a liquid crystal layer or an organic light-emitting element depending on the type of the display device. Further, each of the sub-pixels includes a storage capacitor to control data voltage stably.
- the storage capacitor can maintain data voltage stably, that is, a voltage difference between a pixel electrode and a common electrode.
- the storage capacitor can maintain data voltage stably, that is, a voltage difference between the gate electrode and the source electrode, or the gate electrode and the drain electrode, of a driving transistor.
- the storage capacitor needs a certain minimal size in order to secure the capacitance.
- the inventors of the present disclosure have developed a display device with minimized size of the storage capacitor while maintaining capacitance to supply stable data voltage via using an oxide semiconductor as an electrode of the storage capacitor. Also, a method of manufacturing the display device is disclosed.
- An object of the present disclosure is to provide a storage capacitor having the same capacitance with a conventional storage capacitor, though the size of the storage capacitor is smaller than that of the conventional storage capacitor. This results in reduction of the area of a sub-pixel, hence, an increase of the number of sub-pixels per unit area, and thus provision of a display device having higher resolution.
- another object of the present disclosure is to provide a transparent organic light-emitting display device with a storage capacitor having a smaller size than that of the conventional storage capacitor.
- the transmittance of the transparent organic light-emitting display device is improved, since the size of light-emitting region with the storage capacitor decreases and the size of light-transmissive region without the storage capacitor increases. Further, a method of manufacturing the same is disclosed.
- the display device includes a substrate, a coplanar thin-film transistor, and a storage capacitor.
- the coplanar thin-film transistor includes an active layer including an oxide semiconductor, a gate electrode, and a source or drain electrode.
- the storage capacitor comprises a lower electrode, a first insulation layer, an intermediate electrode, a second insulation layer, and an upper electrode.
- the lower electrode is comprised of the same material as the active layer, and is conductivized.
- the storage capacitor is configured to operate as multiple capacitors.
- the size of the storage capacitor is reduced.
- sufficient capacitance may be secured with the storage capacitor with a smaller size. In this way, the area of each sub-pixel in the display device may be reduced, thereby achieving high resolution.
- the smaller size of the storage capacitor allows for reduction of an size of a light-emitting region and relatively for increase of an size of a light-transmissive region.
- the transmittance of the transparent organic light-emitting display device is improved.
- a layer comprised of the same material as an active layer is patterned using a half-tone mask, and is conductivized.
- the number of processes for manufacturing the display device can be minimized.
- FIG. 1A is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure
- FIG. 1B is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure
- FIG. 2 is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure
- FIG. 3 is a simplified plan view of a display device according to an exemplary embodiment of the present disclosure.
- FIG. 4 is a flowchart for illustrating a method of manufacturing an organic light-emitting display device according to an exemplary embodiment of the present disclosure.
- FIGS. 5A to 5F are cross-sectional views each illustrating a processing step for manufacturing an organic light-emitting display device according to an exemplary embodiment of the present disclosure.
- Indicating that elements or layers are “on” other elements or layers include both a case in which the corresponding elements are just above other elements and a case in which the corresponding elements are intervened with other layers or elements. Indicating that elements or layers are “directly on” other elements or layers means a case in which the corresponding elements are just above other elements.
- first, second, and the like are used in order to describe various components, the components are not limited by the terms. The above terms are used only to discriminate one component from the other component. Therefore, a first component mentioned below may be a second component within the technical spirit of the present invention.
- Respective features of various exemplary embodiments of the present invention can be partially or totally joined or combined with each other and as sufficiently appreciated by those skilled in the art, various interworking or driving can be technologically achieved and the respective exemplary embodiments may be executed independently from each other or together executed through an association relationship.
- FIG. 1A is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.
- a display device 100 A includes a coplanar thin-film transistor T and a storage capacitor Cst.
- a substrate 110 includes a region A in which the coplanar thin-film transistor T is formed and a region B in which the storage capacitor Cst is formed.
- an active layer 131 In the region A of the substrate 110 , an active layer 131 , a gate insulation layer 112 , a gate electrode 132 , an inter-insulation layer 113 , a source electrode 133 , and a drain electrode 134 are stacked on one another, to form the coplanar thin-film transistor T.
- a lower electrode 121 , a first insulation layer 116 , an intermediate electrode 122 , a second insulation layer 117 , and an upper electrode 123 are stacked on one another, to form the storage capacitor Cst.
- the lower electrode 121 , the first insulation layer 116 , the intermediate electrode 122 , and the second insulation layer 117 , and the upper electrode 123 in the region B may be formed of the same materials and in the same processes as the active layer 131 , the gate insulation layer 112 , the gate electrode 132 , the inter-insulation layer 113 , the source and the drain electrodes 133 and 134 in the region A, respectively.
- a buffer layer 111 is formed on the substrate 110 .
- the buffer layer 111 may reduce permeation of moisture or impurities through the substrate 110 , and may make a surface of the substrate flat.
- the buffer layer 111 may be formed of a silicon oxide film, a silicon nitride film or a dual layer thereof.
- the coplanar thin-film transistor T and the storage capacitor Cst is formed on the buffer layer 111 .
- the active layer 131 including an oxide semiconductor is formed in the region A of the substrate 110 .
- the oxide semiconductor included in the active layer 131 may be comprised of indium-gallium-zinc-oxide (InGaZnO) based material.
- the active layer 131 includes a source region, a drain region, and a channel region. The source region and the drain region of the active layer 131 may be conductivized for better contact efficiency with the source electrode 133 and the drain electrode 134 , respectively.
- the channel region of the active layer 131 overlapping and below the gate electrode 132 is an oxide semiconductor, while the source region in contact which the source electrode 133 and the drain region in contact with the drain electrode 134 are regions where an oxide semiconductor is conductivized.
- the active layer 131 includes all of the conductivized source region, the conductivized drain region, and the channel region.
- the expression “X is conductivized” does not mean that the X becomes a complete conductor, but means that it has a property similar to a conductor.
- the “oxide semiconductor is conductivized” means that the surface resistivity of the oxide semiconductor became 103 ⁇ / ⁇ (ohm per square) or smaller.
- the gate insulation layer 112 is formed on the active layer 131 .
- the gate insulation layer 112 insulates the gate electrode 132 from the active layer 131 .
- the gate insulation layer 112 may be formed of, but is not limited to, a silicon oxide film, a silicon nitride film or a dual layer thereof. In some embodiments, the gate insulation layer 112 may be formed only on the active layer 131 overlapping and below the gate electrode 132 . In some other embodiments, the gate insulation layer 112 may be formed over the entire surface of the substrate 110 .
- the gate electrode 132 is formed on the gate insulation layer 112 . At least a part of the gate electrode 132 is overlapped and above the active layer 131 .
- the gate electrode 132 may be formed of a conductive material.
- the inter-insulation layer 113 may be formed on the gate electrode 132 .
- the inter-insulation layer 113 may be formed of the same material as the gate insulation layer 112 .
- the inter-insulation layer 113 is formed over the entire surface of the substrate 110 , and the source electrode 133 and the drain electrode 134 is electrically connected to the active layer 131 via contact holes formed in the inter-insulation layers 113 .
- the source electrode 133 and the drain electrode 134 are formed on the inter-insulation layer 113 .
- the source electrode 133 and the drain electrode 134 is contact with the active layer 131 via the contact holes formed in the inter-insulation layer 113 , respectively.
- the source electrode 133 is in contact with the source region of the active layer 131
- the drain electrode 134 is in contact with the drain region of the active layer 131 .
- the source and the drain electrode 133 and 134 may be formed of conductive materials.
- the lower electrode 121 of the storage capacitor Cst is formed at the same plane as the active layer 131 of the coplanar thin-film transistor T on the substrate 110 .
- the lower electrode 121 may be formed of the same oxide semiconductor material as the active layer 131 . Also, the lower electrode 121 may be formed by patterning the same oxide semiconductor material as the active layer 131 to a desired size, and then conductivizing it.
- the first insulation layer 116 is formed on the lower electrode 121 .
- the first insulation layer 116 insulates the intermediate electrode 122 from the lower electrode 121 and serves as a dielectric in a first capacitor C 1 between the lower electrode 121 and the intermediate electrode 122 .
- the first insulation layer 116 may be formed of substantially the same material or may be the same layer as the above-described gate insulation layer 112 . When the first insulation layer 116 is the same layer as the gate insulation layer 112 , the number of processes may be reduced compared to when the gate insulation layer 112 and the first insulation layer 116 are separately formed.
- the first insulation layer 116 is to insulate the intermediate electrode 122 from the lower electrode 121 .
- the first insulation layer 116 is formed only on the lower electrode 121 .
- the first insulation layer 116 may be formed over the entire surface of the substrate 110 .
- the intermediate electrode 122 is positioned on the first insulation layer 116 . At least apart of the intermediate electrode 122 is overlapped the lower electrode 121 .
- the intermediate electrode 122 may be formed of a conductive material and may be formed of the same material as the above-described gate electrode 132 .
- the intermediate electrode 122 may be electrically connected to the gate electrode 132 .
- the intermediate electrode 122 , the first insulation layer 116 and the lower electrode 121 form the first capacitor C 1 having first capacitance.
- Capacitance is in inverse proportion to the thickness of a dielectric between two electrodes of a capacitor. Accordingly, the first capacitance of the first capacitor C 1 is in inverse proportion to the thickness of the first insulation layer 116 .
- the first insulation layer 116 may be formed as thin as possible in order to increase the first capacitance.
- the first insulation layer 116 may be formed of the same material as the gate insulation layer 112 but may have different thickness from the gate insulation layer 112 .
- the first insulation layer 116 may be thinner than the gate insulation layer 112 . That is, the distance from the lower electrode 121 to the intermediate electrode 122 may be shorter than the distance between the active layer 131 to the gate electrode 132 . Reducing the thickness of the first insulation layer 116 can increase the capacitance of the first capacitor C 1 .
- the second insulation layer 117 may be formed on the intermediate layer 122 .
- the second insulation layer 117 insulates the upper electrode 123 from the intermediate electrode 122 and serves as a dielectric in a second capacitor C 2 between the intermediate electrode 122 and the upper electrode 123 .
- the second insulation layer 117 may be formed of the same material and formed in the same layer as the above-described inter-insulation layer 113 . The number of processes may be reduced by forming the second insulation layer 117 and the inter-insulation layer 113 together in a single step.
- the upper electrode 123 is positioned on the second insulation layer 117 . At least a part of the upper electrode 123 is overlapped the intermediate electrode 122 .
- the upper electrode 123 may be formed of a conductive material and may be formed of the same material as the above-described source electrode 133 or the drain electrode 134 . In FIG. 1A , the upper electrode 123 is connected to the lower electrode 123 .
- the upper electrode 123 is connected with the drain electrode 134 of the coplanar thin-film transistor T.
- the upper electrode 123 may be connected to the source electrode 133 depending on the type and the operation conditions of the coplanar thin-film transistor T.
- the intermediate electrode 122 , the second insulation layer 117 and the upper electrode 123 form a second capacitor C 2 having second capacitance.
- the second insulation layer 117 may be reduced in order to increase the second capacitance.
- the second insulation layer 117 may be formed of the same material as the inter-insulation layer 113 but may have a thickness different from the inter-insulation layer 113 .
- the second insulation layer 117 may be thinner than the inter-insulation layer 113 . That is, the distance from the intermediate electrode 122 to the upper electrode 123 may be shorter than the distance between the gate electrode 132 to the source electrode 133 or the distance between the gate electrode 132 to the drain electrode 134 .
- the second capacitor C 2 may have capacitance larger than that when the second insulation layer 117 and the inter-insulation layer 113 have the same thickness.
- the first capacitor C 1 comprises the lower electrode 121 , the first insulation layer 116 and the intermediate electrode 122 .
- the second capacitor C 2 comprises the upper electrode 123 , the second insulation layer 117 , and the intermediate electrode 122 .
- the lower electrode 121 and the upper electrode 123 are connected to each other such that the first capacitor C 1 and the second capacitor C 2 are connected to each other in parallel to operate as a one storage capacitor Cst.
- the thickness of the first insulation layer 116 which sets the first capacitance of the first capacitor C 1 , may be the same as that of the gate insulation layer 112 .
- the second capacitance of the second capacitor C 2 may be affected by the thickness of the inter-insulation layer 113 when the second insulation layer 117 is formed simultaneously with the inter-insulation layer 116 .
- the gate insulation layer 112 may be thinner than the inter-insulation layer 113 .
- the first insulation layer 116 may be thinner than the second insulation layer 117 , and the first capacitance may be larger than the second capacitance.
- the size of the storage capacitor Cst can be reduced while providing at least the same or greater capacitance than the conventional storage capacitor configuration.
- the area of each of sub-pixels can be reduced. This can increase the number of sub-pixels per unit area, thereby achieving a higher resolution in a display device.
- a coplanar thin-film transistor T has a structure in which a source electrode 133 , a drain electrode 134 , and a gate electrode 132 are formed above an active layer 131 .
- a staggered thin-film transistor has a structure in which a gate electrode, an insulation layer, an active layer, and a source electrode and a drain electrode are formed in order.
- the source and drain electrodes are electrically connected to the active layer without an additional insulation layer therebetween, which makes it difficult to form a capacitor by conductivizing a portion of the semiconductor layer.
- the coplanar thin-film transistor T is advantageous over the staggered thin-film transistor.
- FIG. 1B is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure.
- the organic light-emitting display device 100 B illustrated in FIG. 1B redundant descriptions on the elements substantially the same as those in FIG. 1A will not be made.
- an organic light-emitting element including an anode 141 , an organic light-emitting layer 143 and a cathode 144 is formed on a planarization layer 118 .
- the organic light-emitting layer 143 may be formed on the anode 141
- the cathode 144 may be formed on the organic light-emitting layer 143 .
- the anode 141 is electrically connected to a drain electrode 134 of a coplanar thin-film transistor T via a contact hole in the planarization layer 118 , and a bank layer 142 covers the contact hole. That is, the anode 141 is electrically connected to the upper electrode 123 and the drain electrode 134 .
- the stepped portion in the anode 141 due to the contact hole may cause light leakage from the sub-pixel.
- the bank layer 142 may be formed to cover the contact hole. In this manner, the visibility of the organic light-emitting display device 100 B can be improved.
- a portion of an oxide semiconductor layer formed on the same plane as an active layer 131 of the coplanar thin-film transistor T is conductivized to serve as a lower electrode 121 of a storage capacitor Cst.
- a first insulation layer 116 , an intermediate electrode 122 , a second insulation layer 117 and an upper electrode 123 are stacked in the stated order to form the storage capacitor Cst. Accordingly, the storage capacitor Cst with sufficient capacitance may be formed even in a limited area thereof.
- the same capacitance can be obtained from the storage capacitor Cst even when it has a smaller size than a conventional storage capacitor.
- the area of each of sub-pixels can be reduced and thus the number of sub-pixels per unit area can be increased. This results in a display device with higher resolution.
- the display device may be a bottom emission type organic light-emitting display device.
- the size of the light-emitting region excluding the size of the storage capacitor Cst can be enlarged by employing the storage capacitor Cst illustrated in FIG. 1B .
- the organic light-emitting display device 100 B may include a plurality of sub-pixels, and the sub-pixels may respectively include at least a coplanar thin-film transistor T and at least a storage capacitor Cst. Also, the storage capacitor Cst in at least one of the plurality of sub-pixels has a size that is different from the size of the storage capacitor in another sub-pixel.
- sub-pixels may require different currents for driving, respectively.
- the sizes of the storage capacitors Cst included in the different sub-pixels may be designed based on the different driving currents. By designing the storage capacitors Cst having different sizes, the efficiency of the storage capacitor Cst in each of the sub-pixels can be maximized, and a space for an additional thin-film transistor can be obtained, if necessary.
- FIG. 2 is a cross-sectional view of a display device 200 according to an exemplary embodiment of the present disclosure. Elements of the display device 200 illustrated in FIG. 2 , corresponding to the elements in FIG. 1A will not be described again for simplicity.
- a third insulation layer 215 is formed on an upper electrode 223 , a source and a drain electrodes 233 and 234 .
- a connection part 235 A and an additional electrode 235 B are formed on the third insulation layer 215 .
- the third insulation layer 215 may be formed of a material that may serve as a dielectric layer between the upper electrode 223 and the additional electrode 235 B.
- the third insulation layer 215 may be formed of a silicon oxide film, a silicon nitride film or multiple layers thereof.
- the connection part 235 A is arranged to overlap with the drain electrode 234 , and at least a part of the additional electrode 235 B is arranged to overlap with the upper electrode 223 .
- the connection part 235 A is electrically connected to the drain electrode 234 .
- the connection part 235 A and the additional electrode 235 B may be formed of a conductive material. In some embodiments of the present disclosure, the connection part 235 A may be omitted.
- the additional electrode 235 B and the upper electrode 223 form a third capacitor C 3 with the third insulation layer 215 serving as a dielectric layer.
- the third capacitor C 3 is connected to the first capacitor C 1 and the second capacitor C 2 in parallel, to configure a storage capacitor Cst.
- the first capacitor C 1 comprises the lower electrode 221 , the first insulation layer 216 and the intermediate electrode 222 .
- the second capacitor C 2 comprises the upper electrode 223 , the second insulation layer 217 and the intermediate electrode 222 .
- the third capacitor C 3 comprises the upper electrode 223 , the third insulation layer 215 , and the additional electrode 235 B.
- the upper electrode 223 is connected to the lower electrode 221
- the additional electrode 235 B is connected to intermediate electrode 222 .
- the storage capacitor Cst may operate like three capacitors connected to one another in parallel.
- the storage capacitor Cst may provide larger capacitance without increasing the size of the storage capacitor Cst. Moreover, since sufficient capacitance can be obtained without enlarging the size of the storage capacitor, the area of a sub-pixel can be reduced to increase the number of sub-pixels per unit area. This leads to providing a display device with higher resolution.
- FIG. 3 is a simplified diagram for illustrating a transparent organic light-emitting display device according to an exemplary embodiment of the present disclosure.
- the transparent organic light-emitting display device 300 refers to a display device provided with a certain transmittance, which enables a user to see through the transparent organic light-emitting display device 300 .
- the transmittance of the transparent organic light-emitting display device 300 may be equal to or higher than 20%.
- each of the sub-pixels may include a light-transmissive region TA and a light-emitting region EA.
- the light-emitting region EA may include a switching transistor TFT 1 , a driving transistor TFT 2 and a storage capacitor Cst.
- the light-transmissive region TA allows light from the outside to pass through it. Therefore, if the transistors TFT 1 and TFT 2 and the storage capacitor Cst are formed in the light-transmissive region TA, the transmittance of the transparent organic light-emitting display device 300 decreases and thus a user may not be able to clearly recognize an object through the display device. For this reason, the transistors TFT 1 and TFT 2 and the storage capacitor Cst may be positioned in the light-emitting region EA, as illustrated in FIG. 3 .
- the storage capacitor Cst is formed in a following manner.
- the lower electrode of the storage capacitor is formed by conductivizing the oxide semiconductor layer that serves as the active layers of the transistors TFT 1 and TFT 2 .
- the first insulation layer, the intermediate electrode, and the second insulation layer, and the upper electrode are stacked on the lower electrode in this order.
- the first capacitor C 1 includes a lower electrode, a first insulation layer, and an intermediate electrode.
- the second capacitor C 2 includes an upper electrode, a second insulation layer, and an intermediate electrode.
- the first capacitor C 1 and the second capacitor C 2 may be connected to each other in parallel and may behave as one storage capacitor Cst.
- the storage capacitor Cst comprised of capacitors C 1 and C 2 may be formed with an size equal to or smaller than two-thirds of the size of a conventional storage capacitor having the same capacitance as the storage capacitor Cst. Also, the size of the storage capacitor Cst may be equal to or smaller than 20% of the size of one sub-pixel.
- the storage capacitor Cst in the transparent organic light-emitting display device 300 may be implemented with a smaller size than the conventional storage capacitor having the equal capacitance thereto, the area of the light-emitting region EA can be reduced.
- the area of the light-transmissive region TA can increase relatively in a sub-pixel, and, hence, the transmittance of the transparent organic light-emitting display device 300 can increase.
- the area of a sub-pixel can be reduced so that the number of sub-pixels per unit area can be increased. This results in increasing the resolution of the transparent organic light-emitting display device 300 .
- the storage capacitor illustrated in FIG. 3 is configured by connecting two capacitors to each other in parallel, the configuration of the storage capacitor is not limited thereto but may be configured by connecting three or more capacitors to one another in parallel.
- an initialization thin-film transistor a discharge thin-film transistor, an internal compensation thin-film transistor, a threshold voltage (Vth) compensation thin-film transistor, a sampling thin-film transistor, an emission thin-film transistor and the like may be added thereto.
- Vth threshold voltage
- the light-emitting region EA of a transparent organic light-emitting display device 300 has limited space, and, thus, the above-described various thin-film transistors and the storage capacitor may not be included due to the limited space.
- the capacitance of the storage capacitor Cst is proportional to the size of the storage capacitor Cst, sufficient space is necessary in order to secure capacitance to drive the transparent organic light-emitting display device 300 .
- an active layer is conductivized so as to be employed as an electrode for multiple storage capacitors Cst. Thus, sufficient capacitance can be secured even in small space and thus additional thin-film transistors can be included.
- FIG. 4 is a flowchart for illustrating a method of manufacturing a display device according to an exemplary embodiment of the present disclosure.
- FIGS. 5A to 5F are cross-sectional views each illustrating a processing step for manufacturing a display device according to an exemplary embodiment of the present disclosure.
- a coplanar thin-film transistor T and a storage capacitor Cst may be formed in a sub-pixel of the display device.
- an oxide semiconductor layer 530 is formed on the substrate 510 (S 100 ). Subsequently, the oxide semiconductor layer 530 is patterned using a half-tone mask 501 to form an active layer 530 A and a lower electrode portion 530 B (S 200 ).
- the half-tone mask 501 may include a block portion 502 blocking light, a transmissive portion 503 allowing for light to pass therethrough, and a translucent portion 504 allowing for partial light to pass therethrough. After the half-tone mask 501 is disposed on the photoresist layer 540 , exposure process is performed followed by a development process.
- a photoresist 541 A in a region corresponding to the transmissive portion 503 remains, and a photoresist 541 B in a region corresponding to the translucent portion 504 partially remains.
- etching process is performed to remove the oxide semiconductor layer 530 where the photoresists 541 A and 541 B do not remain.
- the region corresponding to the transmissive portion 503 is referred to as the active layer 530 A
- the region corresponding to the translucent portion 504 is referred to as the lower electrode portion 530 B.
- the active layer 530 A is spaced apart from the lower electrode portion 530 B.
- a part of the photoresist 541 A on the active layer 530 A and the photoresist 541 B on the lower electrode portion 530 B are removed by ashing process. After ashing process, the photoresist 541 B is removed to expose the lower electrode portion 530 B, and a part of photoresist 541 A remains on the active layer 530 A.
- the lower electrode portion 530 B is conductivized to form a lower electrode 521 of a storage capacitor Cst S.
- Conductivizing process may include performing drying etching, hydrogen plasma treatment, helium plasma treatment and the like on the lower electrode portion 530 B.
- the active layer 530 A where the photoresist 541 A remains is not conductivized. Subsequently, the photoresist 541 A remaining on the active layer 530 A is stripped.
- the patterning process and the conductivizing process of the oxide semiconductor layer 530 illustrated in FIGS. 5A to 5D may be conducted by using various processes other than the process with the half-tone mask 501 .
- the oxide semiconductor layer 530 may be patterned or conductivized using two photo masks instead of the half-tone mask 501 .
- a gate insulation layer 512 A is formed on the active layer 530 A, and a first insulation layer 512 B is formed on the lower electrode 521 .
- the gate insulation layer 512 A and the first insulation layer 512 B may be formed of the same material.
- the first insulation layer 512 B may be formed simultaneously with the gate insulation layer 512 A.
- the first insulation layer 512 B and gate insulation layer 512 may be referred to as a base insulation layer.
- a gate electrode 532 is formed on the gate insulation layer 512 A, and an intermediate electrode 522 is formed on the first insulation layer 512 B.
- the gate electrode 532 and the intermediate electrode 522 are formed on the base insulation layer.
- the gate electrode 532 may be formed of the same material as the intermediate electrode 522 .
- a first conductive layer is deposited on the base insulation layer, and then, the first conductive layer is patterned to form the gate electrode 532 and the intermediate electrode 522 spaced apart from the gate electrode 532 .
- the gate electrode 532 overlaps with at least a part of the active layer 530 A.
- the intermediate electrode 522 overlaps at least a part of the lower electrode 521 .
- exposed portions of the active layer 530 A are conductivized (S 500 ).
- the exposed portions of the active layer 530 A mean the portions where the active layer 530 A is not overlapped with the gate electrode 532 or the gate insulation layer 512 A.
- conductivizing the exposed portions of the active layer 530 A may be performed separately from conductivizing the lower electrode portion 530 B for forming the above described lower electrode 521 .
- the process for conductivizing the exposed portions of the active layer 530 A and the process for conductivizing the lower electrode portion 530 B may be performed simultaneously.
- an additional insulation layer 513 is formed over the gate electrode 532 and the intermediate electrode 522 .
- an inter-insulation layer is formed on the gate electrode 532
- a second insulation layer is formed on the intermediate electrode 522 .
- the second insulation layer may be formed simultaneously with inter-insulation layer.
- the inter-insulation layer and the second insulation layer may be referred to as the additional insulation layer 513 .
- a source electrode 533 and a drain electrode 534 are formed over the active layer 530 A. Further, an upper electrode 523 is formed over the intermediate electrode 522 (S 600 ). Also, the source electrode 533 , the drain electrode 534 and the upper electrode 523 are formed on the additional insulation layer 513 .
- the upper electrode 523 may be formed of the same material as the source electrode 533 and the drain electrode 534 . For example, a second conductive layer is deposited on the additional insulation layer 513 . And then, the second conductive layer is patterned to form the source and drain electrodes 533 and 534 and the upper electrode 523 .
- the source electrode 533 and the drain electrode 534 are electrically connected to the conductivized regions of the active layer 530 A via contact holes in the additional insulation layer 513 , respectively.
- the upper electrode 523 is connected to the lower electrode 521 via a contact hole in the additional insulation layer 513 .
- the drain electrode 534 and the upper electrode 523 are illustrated as being electrically connected to each other in FIG. 5F , the upper electrode 523 may be connected to the source electrode 533 depending on the type of thin-film transistor.
- the lower electrode 521 , the intermediate electrode 522 and the first insulation layer 512 B therebetween form a first capacitor C 1
- the intermediate electrode 522 , the upper electrode 523 and the additional insulation layer 513 therebetween forma second capacitor C 2
- the lower electrode 521 and the upper electrode 523 are connected to each other, and thus the first capacitor C 1 and the second capacitor C 2 operate in parallel.
- a substrate refers to a member that supports various elements formed thereon.
- the substrate may be comprised of an insulation material.
- the substrate may be, but is not limited to, comprised of glass or plastic.
- an oxide semiconductor layer may include various oxides that can be made conductivized.
- the oxide semiconductor may include: quaternary metal oxide such as indium-tin-gallium-zinc-oxide (InSnGaZnO) based material; ternary metal oxide such as indium-tin-zinc-oxide (InSnZnO) based material, indium-aluminum-zinc-oxide (InAlZnO) based material, indium-hafnium-zinc-oxide (InHfZnO) based material, tin-gallium-zinc-oxide (SnGaZnO) based material, aluminum-gallium-zinc-oxide (AlGaZnO) based material, and tin-aluminum-zinc-oxide based (SnAlZnO) material;
- the conductive electrodes i.e., the gate electrode, the source electrode, the drain electrode, the intermediate electrode, the upper electrode and the additional electrode may be comprised of, but are not limited to, molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.
- Mo molybdenum
- Al aluminum
- Cr chrome
- Au gold
- Ti titanium
- Ni nickel
- Nd neodymium
- Cu copper
- the conductive electrodes that is, the gate electrode, the source electrode, the drain electrode, the intermediate electrode, the upper electrode and the additional electrode may be multiple layers comprised of a material selected from a group consisting of molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.
- Mo molybdenum
- Al aluminum
- Cr chrome
- Au gold
- Ti titanium
- Ni nickel
- Nd neodymium
- Cu copper
- the lower electrode, the first insulation layer and the intermediate electrode form a first capacitor
- the intermediate electrode, the second insulation layer and the upper electrode forma second capacitor, wherein the first capacitor and the second capacitor are connected to each other in parallel to forma storage capacitor.
- capacitance of the first capacitor is larger than capacitance of the second capacitor.
- the first insulation layer is thinner than the second insulation layer.
- the display device further comprises an additional electrode on the upper electrode, at least a part of the additional electrode overlapping the upper electrode.
- the additional electrode is connected to the intermediate electrode.
- the coplanar thin-film transistor further comprises a gate insulation layer between the active layer and the gate electrode, wherein the first insulation layer is thinner than the gate insulation layer.
- the coplanar thin-film transistor further comprises an inter-insulation layer between the gate electrode and the source electrode or the drain electrode, wherein the second insulation layer is thinner than the inter-insulation layer.
- the intermediate electrode is connected to the gate electrode of the coplanar TFT.
- the upper electrode is electrically connected to one of the source electrode or the drain electrode of the coplanar TFT.
- the display device further comprises an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode.
- the display device further comprises an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode, and a connection part interposed between the anode and one of the source electrode or drain electrode, the connection part being comprised of the same material as the additional electrode.
- the display device further comprises a plurality of sub-pixels including a light-emitting region and a light-transmissive region, respectively, wherein the storage capacitor is positioned in the light-emitting region.
- the storage capacitor in at least one of the plurality of sub-pixels has a size that is different from the size of the storage capacitor in another sub-pixel.
- a method of manufacturing a displace device comprises forming an oxide semiconductor layer on a substrate, patterning the oxide semiconductor layer to form an active layer and a lower electrode portion spaced apart from the active layer, conductivizing the lower electrode portion to form a lower electrode, forming a base insulation layer on the active layer and the lower electrode, forming a gate electrode and an intermediate electrode on the base insulation layer, forming an additional insulation layer over the gate electrode and the intermediate electrode, the additional insulation layer having a contact hole, and forming a source electrode, a drain electrode and an upper electrode, wherein the upper electrode connected to the lower electrode via the contact hole in the additional insulation layer.
- the step of forming the gate electrode and the intermediate electrode comprises depositing a first conductive layer on the base insulation layer, and patterning the first conductive layer to form the gate electrode and the intermediate electrode spaced apart from the gate electrode.
- the step of forming the source electrode, the drain electrode and the upper electrode comprises depositing a second conductive layer on the additional insulation layer, and patterning the second conductive layer to form the source and drain electrodes and the upper electrode.
Abstract
Provided are a display device and a method of manufacturing the same. A display device includes a coplanar thin-film transistor and a capacitor. The coplanar thin-film transistor comprises a gate electrode, an active layer including an oxide semiconductor, a source electrode and a drain electrode. The capacitor comprises a lower electrode, intermediate electrode and upper electrode. And the lower electrode is comprised of the same material as the active layer, and is conductivized. Also, the upper electrode is connected to the lower electrode. By using the conductivized lower electrode, the capacitor is configured to operate as multiple capacitors. Thus, the size of the capacitor is reduced, and sufficient capacitance may be secured with the capacitor with a smaller area. In this way, the area of each sub-pixel in the display device may be reduced, thereby achieving high resolution.
Description
- This application claims the priority of Korean Patent Application No. 10-2013-0120127 filed on Oct. 8, 2013, in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference.
- 1. Field of the Invention
- The present disclosure is directed to a display device and a method of manufacturing the same, and specifically to a display device that can control stable capacitance of a storage capacitor as the storage capacitor with a smaller size, and a method of manufacturing the same.
- 2. Description of the Related Art
- A display device driven in an active-matrix type includes a thin-film transistor in each of sub-pixels, and a liquid crystal layer or an organic light-emitting element depending on the type of the display device. Further, each of the sub-pixels includes a storage capacitor to control data voltage stably. In a display device including a liquid crystal layer, the storage capacitor can maintain data voltage stably, that is, a voltage difference between a pixel electrode and a common electrode. In a display device including an organic light-emitting element, the storage capacitor can maintain data voltage stably, that is, a voltage difference between the gate electrode and the source electrode, or the gate electrode and the drain electrode, of a driving transistor.
- As the area of each sub-pixel is reduced in order to achieve higher resolution of a display device, the size of a thin-film transistor (TFT) or a storage capacitor in each of sub-pixels is reduced. This results in decrease in capacitance of the storage capacitor. When this happens, the data voltage in a sub-pixel becomes unstable. Therefore, sufficient capacitance of the storage capacitor should be secured.
- The storage capacitor needs a certain minimal size in order to secure the capacitance. The inventors of the present disclosure have developed a display device with minimized size of the storage capacitor while maintaining capacitance to supply stable data voltage via using an oxide semiconductor as an electrode of the storage capacitor. Also, a method of manufacturing the display device is disclosed.
- An object of the present disclosure is to provide a storage capacitor having the same capacitance with a conventional storage capacitor, though the size of the storage capacitor is smaller than that of the conventional storage capacitor. This results in reduction of the area of a sub-pixel, hence, an increase of the number of sub-pixels per unit area, and thus provision of a display device having higher resolution.
- Further, another object of the present disclosure is to provide a transparent organic light-emitting display device with a storage capacitor having a smaller size than that of the conventional storage capacitor. Thus the transmittance of the transparent organic light-emitting display device is improved, since the size of light-emitting region with the storage capacitor decreases and the size of light-transmissive region without the storage capacitor increases. Further, a method of manufacturing the same is disclosed.
- Objects of the present disclosure are not limited to those described above. Other objects not described herein will be clearly understood by a person skilled in the art from the following description.
- According to an aspect of the present disclosure, there is provided a display device capable of achieving above-mentioned objects. The display device includes a substrate, a coplanar thin-film transistor, and a storage capacitor. The coplanar thin-film transistor includes an active layer including an oxide semiconductor, a gate electrode, and a source or drain electrode. The storage capacitor comprises a lower electrode, a first insulation layer, an intermediate electrode, a second insulation layer, and an upper electrode. And the lower electrode is comprised of the same material as the active layer, and is conductivized.
- By using the conductivized lower electrode, the storage capacitor is configured to operate as multiple capacitors. Thus, the size of the storage capacitor is reduced. In addition, sufficient capacitance may be secured with the storage capacitor with a smaller size. In this way, the area of each sub-pixel in the display device may be reduced, thereby achieving high resolution.
- When the display device is a transparent organic light-emitting display device, the smaller size of the storage capacitor allows for reduction of an size of a light-emitting region and relatively for increase of an size of a light-transmissive region. Thus, the transmittance of the transparent organic light-emitting display device is improved.
- According to an exemplary embodiment of the present disclosure, a layer comprised of the same material as an active layer is patterned using a half-tone mask, and is conductivized. Thus, the number of processes for manufacturing the display device can be minimized.
- Other particulars of exemplary embodiments are illustrated in the detailed description and the accompanying drawings.
- The above and other aspects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
-
FIG. 1A is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure; -
FIG. 1B is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure; -
FIG. 2 is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure; -
FIG. 3 is a simplified plan view of a display device according to an exemplary embodiment of the present disclosure; -
FIG. 4 is a flowchart for illustrating a method of manufacturing an organic light-emitting display device according to an exemplary embodiment of the present disclosure; and -
FIGS. 5A to 5F are cross-sectional views each illustrating a processing step for manufacturing an organic light-emitting display device according to an exemplary embodiment of the present disclosure. - Various advantages and features of the present invention and methods accomplishing thereof will become apparent from the following description of embodiments with reference to the accompanying drawings. However, the present invention is not limited to exemplary embodiment disclosed herein but will be implemented in various forms. The exemplary embodiments are provided by way of example only so that a person of ordinary skilled in the art can fully understand the disclosures of the present invention and the scope of the present invention. Therefore, the present invention will be defined only by the scope of the appended claims.
- Indicating that elements or layers are “on” other elements or layers include both a case in which the corresponding elements are just above other elements and a case in which the corresponding elements are intervened with other layers or elements. Indicating that elements or layers are “directly on” other elements or layers means a case in which the corresponding elements are just above other elements.
- The same reference numerals indicate the same elements throughout the specification.
- In the drawings, size and thickness of each element are arbitrarily illustrated for convenience of description, and the present invention is not necessarily limited to those illustrated in the drawings.
- Although first, second, and the like are used in order to describe various components, the components are not limited by the terms. The above terms are used only to discriminate one component from the other component. Therefore, a first component mentioned below may be a second component within the technical spirit of the present invention.
- Respective features of various exemplary embodiments of the present invention can be partially or totally joined or combined with each other and as sufficiently appreciated by those skilled in the art, various interworking or driving can be technologically achieved and the respective exemplary embodiments may be executed independently from each other or together executed through an association relationship.
-
FIG. 1A is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Adisplay device 100A includes a coplanar thin-film transistor T and a storage capacitor Cst. - A
substrate 110 includes a region A in which the coplanar thin-film transistor T is formed and a region B in which the storage capacitor Cst is formed. In the region A of thesubstrate 110, anactive layer 131, agate insulation layer 112, agate electrode 132, aninter-insulation layer 113, asource electrode 133, and adrain electrode 134 are stacked on one another, to form the coplanar thin-film transistor T. In the region B of thesubstrate 110, alower electrode 121, afirst insulation layer 116, anintermediate electrode 122, asecond insulation layer 117, and anupper electrode 123 are stacked on one another, to form the storage capacitor Cst. Thelower electrode 121, thefirst insulation layer 116, theintermediate electrode 122, and thesecond insulation layer 117, and theupper electrode 123 in the region B may be formed of the same materials and in the same processes as theactive layer 131, thegate insulation layer 112, thegate electrode 132, theinter-insulation layer 113, the source and thedrain electrodes - A
buffer layer 111 is formed on thesubstrate 110. Thebuffer layer 111 may reduce permeation of moisture or impurities through thesubstrate 110, and may make a surface of the substrate flat. Thebuffer layer 111 may be formed of a silicon oxide film, a silicon nitride film or a dual layer thereof. On thebuffer layer 111, the coplanar thin-film transistor T and the storage capacitor Cst is formed. - In the following description, the configuration of the coplanar thin-film transistor T formed in the region A of the
substrate 110 will be described first and then that of the storage capacitor Cst formed in the region B will be described. - The
active layer 131 including an oxide semiconductor is formed in the region A of thesubstrate 110. The oxide semiconductor included in theactive layer 131, for example, may be comprised of indium-gallium-zinc-oxide (InGaZnO) based material. Theactive layer 131 includes a source region, a drain region, and a channel region. The source region and the drain region of theactive layer 131 may be conductivized for better contact efficiency with thesource electrode 133 and thedrain electrode 134, respectively. - Referring to
FIG. 1A , the channel region of theactive layer 131 overlapping and below thegate electrode 132 is an oxide semiconductor, while the source region in contact which thesource electrode 133 and the drain region in contact with thedrain electrode 134 are regions where an oxide semiconductor is conductivized. As used herein, it is assumed that theactive layer 131 includes all of the conductivized source region, the conductivized drain region, and the channel region. As used herein, the expression “X is conductivized” does not mean that the X becomes a complete conductor, but means that it has a property similar to a conductor. For example, the “oxide semiconductor is conductivized” means that the surface resistivity of the oxide semiconductor became 103Ω/□ (ohm per square) or smaller. - The
gate insulation layer 112 is formed on theactive layer 131. Thegate insulation layer 112 insulates thegate electrode 132 from theactive layer 131. Thegate insulation layer 112 may be formed of, but is not limited to, a silicon oxide film, a silicon nitride film or a dual layer thereof. In some embodiments, thegate insulation layer 112 may be formed only on theactive layer 131 overlapping and below thegate electrode 132. In some other embodiments, thegate insulation layer 112 may be formed over the entire surface of thesubstrate 110. - The
gate electrode 132 is formed on thegate insulation layer 112. At least a part of thegate electrode 132 is overlapped and above theactive layer 131. Thegate electrode 132 may be formed of a conductive material. - The
inter-insulation layer 113 may be formed on thegate electrode 132. Theinter-insulation layer 113 may be formed of the same material as thegate insulation layer 112. Theinter-insulation layer 113 is formed over the entire surface of thesubstrate 110, and thesource electrode 133 and thedrain electrode 134 is electrically connected to theactive layer 131 via contact holes formed in the inter-insulation layers 113. - The
source electrode 133 and thedrain electrode 134 are formed on theinter-insulation layer 113. Thesource electrode 133 and thedrain electrode 134 is contact with theactive layer 131 via the contact holes formed in theinter-insulation layer 113, respectively. To be specific, thesource electrode 133 is in contact with the source region of theactive layer 131, and thedrain electrode 134 is in contact with the drain region of theactive layer 131. The source and thedrain electrode - Now, the configuration of the storage capacitor Cst formed in the region B of the
substrate 110 will be described. - The
lower electrode 121 of the storage capacitor Cst is formed at the same plane as theactive layer 131 of the coplanar thin-film transistor T on thesubstrate 110. Thelower electrode 121 may be formed of the same oxide semiconductor material as theactive layer 131. Also, thelower electrode 121 may be formed by patterning the same oxide semiconductor material as theactive layer 131 to a desired size, and then conductivizing it. - The
first insulation layer 116 is formed on thelower electrode 121. Thefirst insulation layer 116 insulates theintermediate electrode 122 from thelower electrode 121 and serves as a dielectric in a first capacitor C1 between thelower electrode 121 and theintermediate electrode 122. In addition, thefirst insulation layer 116 may be formed of substantially the same material or may be the same layer as the above-describedgate insulation layer 112. When thefirst insulation layer 116 is the same layer as thegate insulation layer 112, the number of processes may be reduced compared to when thegate insulation layer 112 and thefirst insulation layer 116 are separately formed. - The
first insulation layer 116 is to insulate theintermediate electrode 122 from thelower electrode 121. Thus, as illustrated in theFIG. 1A , thefirst insulation layer 116 is formed only on thelower electrode 121. But, the present disclosure is not limited thereto. Thefirst insulation layer 116 may be formed over the entire surface of thesubstrate 110. - The
intermediate electrode 122 is positioned on thefirst insulation layer 116. At least apart of theintermediate electrode 122 is overlapped thelower electrode 121. Theintermediate electrode 122 may be formed of a conductive material and may be formed of the same material as the above-describedgate electrode 132. Theintermediate electrode 122 may be electrically connected to thegate electrode 132. - In the
display device 100A according to the exemplary embodiment of the present disclosure, theintermediate electrode 122, thefirst insulation layer 116 and thelower electrode 121 form the first capacitor C1 having first capacitance. - Capacitance is in inverse proportion to the thickness of a dielectric between two electrodes of a capacitor. Accordingly, the first capacitance of the first capacitor C1 is in inverse proportion to the thickness of the
first insulation layer 116. Thus, thefirst insulation layer 116 may be formed as thin as possible in order to increase the first capacitance. Thefirst insulation layer 116 may be formed of the same material as thegate insulation layer 112 but may have different thickness from thegate insulation layer 112. For example, thefirst insulation layer 116 may be thinner than thegate insulation layer 112. That is, the distance from thelower electrode 121 to theintermediate electrode 122 may be shorter than the distance between theactive layer 131 to thegate electrode 132. Reducing the thickness of thefirst insulation layer 116 can increase the capacitance of the first capacitor C1. - The
second insulation layer 117 may be formed on theintermediate layer 122. Thesecond insulation layer 117 insulates theupper electrode 123 from theintermediate electrode 122 and serves as a dielectric in a second capacitor C2 between theintermediate electrode 122 and theupper electrode 123. Thesecond insulation layer 117 may be formed of the same material and formed in the same layer as the above-describedinter-insulation layer 113. The number of processes may be reduced by forming thesecond insulation layer 117 and theinter-insulation layer 113 together in a single step. - The
upper electrode 123 is positioned on thesecond insulation layer 117. At least a part of theupper electrode 123 is overlapped theintermediate electrode 122. Theupper electrode 123 may be formed of a conductive material and may be formed of the same material as the above-describedsource electrode 133 or thedrain electrode 134. InFIG. 1A , theupper electrode 123 is connected to thelower electrode 123. - Also, in
FIG. 1A , theupper electrode 123 is connected with thedrain electrode 134 of the coplanar thin-film transistor T. However, in some other embodiments, theupper electrode 123 may be connected to thesource electrode 133 depending on the type and the operation conditions of the coplanar thin-film transistor T. - In the
display device 100A according to the exemplary embodiment of the present disclosure, theintermediate electrode 122, thesecond insulation layer 117 and theupper electrode 123 form a second capacitor C2 having second capacitance. - The
second insulation layer 117 may be reduced in order to increase the second capacitance. Thesecond insulation layer 117 may be formed of the same material as theinter-insulation layer 113 but may have a thickness different from theinter-insulation layer 113. For example, thesecond insulation layer 117 may be thinner than theinter-insulation layer 113. That is, the distance from theintermediate electrode 122 to theupper electrode 123 may be shorter than the distance between thegate electrode 132 to thesource electrode 133 or the distance between thegate electrode 132 to thedrain electrode 134. When thesecond insulation layer 117 is thinner than theinter-insulation layer 113, the second capacitor C2 may have capacitance larger than that when thesecond insulation layer 117 and theinter-insulation layer 113 have the same thickness. - The first capacitor C1 comprises the
lower electrode 121, thefirst insulation layer 116 and theintermediate electrode 122. The second capacitor C2 comprises theupper electrode 123, thesecond insulation layer 117, and theintermediate electrode 122. Thelower electrode 121 and theupper electrode 123 are connected to each other such that the first capacitor C1 and the second capacitor C2 are connected to each other in parallel to operate as a one storage capacitor Cst. - When the
first insulation layer 116 may be formed simultaneously with thegate insulation layer 112, the thickness of thefirst insulation layer 116, which sets the first capacitance of the first capacitor C1, may be the same as that of thegate insulation layer 112. Similarly, the second capacitance of the second capacitor C2 may be affected by the thickness of theinter-insulation layer 113 when thesecond insulation layer 117 is formed simultaneously with theinter-insulation layer 116. - When forming the coplanar thin-film transistor T, the
gate insulation layer 112 may be thinner than theinter-insulation layer 113. In such cases, thefirst insulation layer 116 may be thinner than thesecond insulation layer 117, and the first capacitance may be larger than the second capacitance. - By configuring the storage capacitor Cst as illustrated in
FIG. 1A , the size of the storage capacitor Cst can be reduced while providing at least the same or greater capacitance than the conventional storage capacitor configuration. With the reduced size of the storage capacitor Cst, the area of each of sub-pixels can be reduced. This can increase the number of sub-pixels per unit area, thereby achieving a higher resolution in a display device. - Referring to
FIG. 1A , a coplanar thin-film transistor T has a structure in which asource electrode 133, adrain electrode 134, and agate electrode 132 are formed above anactive layer 131. On the contrary, a staggered thin-film transistor has a structure in which a gate electrode, an insulation layer, an active layer, and a source electrode and a drain electrode are formed in order. In this setting, the source and drain electrodes are electrically connected to the active layer without an additional insulation layer therebetween, which makes it difficult to form a capacitor by conductivizing a portion of the semiconductor layer. - In order to utilize a portion of the semiconductor layer as an independent electrode for the capacitor in the staggered thin-film transistor, it is necessary to form the additional insulation layer on the active layer and to conduct an additional opening process. Therefore, when conductivizing a portion of the semiconductor layer to utilize it as the electrode of the capacitor, the coplanar thin-film transistor T is advantageous over the staggered thin-film transistor.
-
FIG. 1B is a cross-sectional view of an organic light-emitting display device according to an exemplary embodiment of the present disclosure. Among the elements of the organic light-emittingdisplay device 100B illustrated inFIG. 1B , redundant descriptions on the elements substantially the same as those inFIG. 1A will not be made. - Referring to
FIG. 1B , an organic light-emitting element including ananode 141, an organic light-emittinglayer 143 and acathode 144 is formed on aplanarization layer 118. The organic light-emittinglayer 143 may be formed on theanode 141, and thecathode 144 may be formed on the organic light-emittinglayer 143. Theanode 141 is electrically connected to adrain electrode 134 of a coplanar thin-film transistor T via a contact hole in theplanarization layer 118, and abank layer 142 covers the contact hole. That is, theanode 141 is electrically connected to theupper electrode 123 and thedrain electrode 134. Although not depicted inFIG. 1B , the stepped portion in theanode 141 due to the contact hole may cause light leakage from the sub-pixel. In order to reduce this, thebank layer 142 may be formed to cover the contact hole. In this manner, the visibility of the organic light-emittingdisplay device 100B can be improved. - In the organic light-emitting
display device 100B according to the exemplary embodiment of the present disclosure, a portion of an oxide semiconductor layer formed on the same plane as anactive layer 131 of the coplanar thin-film transistor T is conductivized to serve as alower electrode 121 of a storage capacitor Cst. On thelower electrode 121, afirst insulation layer 116, anintermediate electrode 122, asecond insulation layer 117 and anupper electrode 123 are stacked in the stated order to form the storage capacitor Cst. Accordingly, the storage capacitor Cst with sufficient capacitance may be formed even in a limited area thereof. - When the storage capacitor Cst is configured as illustrated in
FIG. 1B , the same capacitance can be obtained from the storage capacitor Cst even when it has a smaller size than a conventional storage capacitor. Using the smaller storage capacitor Cst, the area of each of sub-pixels can be reduced and thus the number of sub-pixels per unit area can be increased. This results in a display device with higher resolution. - In some embodiments, the display device may be a bottom emission type organic light-emitting display device. In such embodiments, the size of the light-emitting region excluding the size of the storage capacitor Cst can be enlarged by employing the storage capacitor Cst illustrated in
FIG. 1B . - The organic light-emitting
display device 100B according to the exemplary embodiment of the present disclosure may include a plurality of sub-pixels, and the sub-pixels may respectively include at least a coplanar thin-film transistor T and at least a storage capacitor Cst. Also, the storage capacitor Cst in at least one of the plurality of sub-pixels has a size that is different from the size of the storage capacitor in another sub-pixel. In the organic light-emittingdisplay device 100B, sub-pixels may require different currents for driving, respectively. The sizes of the storage capacitors Cst included in the different sub-pixels may be designed based on the different driving currents. By designing the storage capacitors Cst having different sizes, the efficiency of the storage capacitor Cst in each of the sub-pixels can be maximized, and a space for an additional thin-film transistor can be obtained, if necessary. -
FIG. 2 is a cross-sectional view of adisplay device 200 according to an exemplary embodiment of the present disclosure. Elements of thedisplay device 200 illustrated inFIG. 2 , corresponding to the elements inFIG. 1A will not be described again for simplicity. - Referring to
FIG. 2 , athird insulation layer 215 is formed on anupper electrode 223, a source and adrain electrodes connection part 235A and anadditional electrode 235B are formed on thethird insulation layer 215. Thethird insulation layer 215 may be formed of a material that may serve as a dielectric layer between theupper electrode 223 and theadditional electrode 235B. Thethird insulation layer 215 may be formed of a silicon oxide film, a silicon nitride film or multiple layers thereof. Theconnection part 235A is arranged to overlap with thedrain electrode 234, and at least a part of theadditional electrode 235B is arranged to overlap with theupper electrode 223. Theconnection part 235A is electrically connected to thedrain electrode 234. Theconnection part 235A and theadditional electrode 235B may be formed of a conductive material. In some embodiments of the present disclosure, theconnection part 235A may be omitted. - The
additional electrode 235B and theupper electrode 223 form a third capacitor C3 with thethird insulation layer 215 serving as a dielectric layer. - The third capacitor C3 is connected to the first capacitor C1 and the second capacitor C2 in parallel, to configure a storage capacitor Cst. In other words, the first capacitor C1 comprises the
lower electrode 221, thefirst insulation layer 216 and theintermediate electrode 222. The second capacitor C2 comprises theupper electrode 223, thesecond insulation layer 217 and theintermediate electrode 222. Also, the third capacitor C3 comprises theupper electrode 223, thethird insulation layer 215, and theadditional electrode 235B. Here, theupper electrode 223 is connected to thelower electrode 221, and theadditional electrode 235B is connected tointermediate electrode 222. In this way, the storage capacitor Cst may operate like three capacitors connected to one another in parallel. - By forming the third capacitor C3 connected in parallel, the storage capacitor Cst may provide larger capacitance without increasing the size of the storage capacitor Cst. Moreover, since sufficient capacitance can be obtained without enlarging the size of the storage capacitor, the area of a sub-pixel can be reduced to increase the number of sub-pixels per unit area. This leads to providing a display device with higher resolution.
-
FIG. 3 is a simplified diagram for illustrating a transparent organic light-emitting display device according to an exemplary embodiment of the present disclosure. - As used herein, the transparent organic light-emitting
display device 300 refers to a display device provided with a certain transmittance, which enables a user to see through the transparent organic light-emittingdisplay device 300. For example, the transmittance of the transparent organic light-emittingdisplay device 300 may be equal to or higher than 20%. - Referring to
FIG. 3 , each of the sub-pixels may include a light-transmissive region TA and a light-emitting region EA. The light-emitting region EA may include a switching transistor TFT1, a driving transistor TFT2 and a storage capacitor Cst. The light-transmissive region TA allows light from the outside to pass through it. Therefore, if the transistors TFT1 and TFT2 and the storage capacitor Cst are formed in the light-transmissive region TA, the transmittance of the transparent organic light-emittingdisplay device 300 decreases and thus a user may not be able to clearly recognize an object through the display device. For this reason, the transistors TFT1 and TFT2 and the storage capacitor Cst may be positioned in the light-emitting region EA, as illustrated inFIG. 3 . - In the organic light-emitting
display device 300 according to the exemplary embodiment of the present disclosure, the storage capacitor Cst is formed in a following manner. The lower electrode of the storage capacitor is formed by conductivizing the oxide semiconductor layer that serves as the active layers of the transistors TFT1 and TFT2. The first insulation layer, the intermediate electrode, and the second insulation layer, and the upper electrode are stacked on the lower electrode in this order. The first capacitor C1 includes a lower electrode, a first insulation layer, and an intermediate electrode. And the second capacitor C2 includes an upper electrode, a second insulation layer, and an intermediate electrode. The first capacitor C1 and the second capacitor C2 may be connected to each other in parallel and may behave as one storage capacitor Cst. The storage capacitor Cst comprised of capacitors C1 and C2 may be formed with an size equal to or smaller than two-thirds of the size of a conventional storage capacitor having the same capacitance as the storage capacitor Cst. Also, the size of the storage capacitor Cst may be equal to or smaller than 20% of the size of one sub-pixel. - Since the storage capacitor Cst in the transparent organic light-emitting
display device 300 may be implemented with a smaller size than the conventional storage capacitor having the equal capacitance thereto, the area of the light-emitting region EA can be reduced. Thus, the area of the light-transmissive region TA can increase relatively in a sub-pixel, and, hence, the transmittance of the transparent organic light-emittingdisplay device 300 can increase. Further, even when the area of the light-transmissive region TA does not increase, the area of a sub-pixel can be reduced so that the number of sub-pixels per unit area can be increased. This results in increasing the resolution of the transparent organic light-emittingdisplay device 300. Although the storage capacitor illustrated inFIG. 3 is configured by connecting two capacitors to each other in parallel, the configuration of the storage capacitor is not limited thereto but may be configured by connecting three or more capacitors to one another in parallel. - In order to improve the reliability of an organic light-emitting display device, various thin-film transistors may be added thereto. For instance, an initialization thin-film transistor, a discharge thin-film transistor, an internal compensation thin-film transistor, a threshold voltage (Vth) compensation thin-film transistor, a sampling thin-film transistor, an emission thin-film transistor and the like may be added thereto.
- In various exemplary embodiments of the present disclosure, the light-emitting region EA of a transparent organic light-emitting
display device 300 has limited space, and, thus, the above-described various thin-film transistors and the storage capacitor may not be included due to the limited space. In particular, since the capacitance of the storage capacitor Cst is proportional to the size of the storage capacitor Cst, sufficient space is necessary in order to secure capacitance to drive the transparent organic light-emittingdisplay device 300. As for the storage capacitor Cst according to an exemplary embodiment of the present disclosure, an active layer is conductivized so as to be employed as an electrode for multiple storage capacitors Cst. Thus, sufficient capacitance can be secured even in small space and thus additional thin-film transistors can be included. -
FIG. 4 is a flowchart for illustrating a method of manufacturing a display device according to an exemplary embodiment of the present disclosure.FIGS. 5A to 5F are cross-sectional views each illustrating a processing step for manufacturing a display device according to an exemplary embodiment of the present disclosure. - According to the method of manufacturing a display device according to the exemplary embodiment of the present disclosure, a coplanar thin-film transistor T and a storage capacitor Cst may be formed in a sub-pixel of the display device.
- Initially, an
oxide semiconductor layer 530 is formed on the substrate 510 (S100). Subsequently, theoxide semiconductor layer 530 is patterned using a half-tone mask 501 to form anactive layer 530A and alower electrode portion 530B (S200). - Referring to
FIG. 5A , thebuffer layer 511, theoxide semiconductor layer 530, and aphotoresist layer 540 are stacked on one another in this order on thesubstrate 510. The half-tone mask 501 may include ablock portion 502 blocking light, atransmissive portion 503 allowing for light to pass therethrough, and atranslucent portion 504 allowing for partial light to pass therethrough. After the half-tone mask 501 is disposed on thephotoresist layer 540, exposure process is performed followed by a development process. - As can be seen from
FIG. 5B , after the development process, aphotoresist 541A in a region corresponding to thetransmissive portion 503 remains, and aphotoresist 541B in a region corresponding to thetranslucent portion 504 partially remains. - Referring to
FIG. 5C , etching process is performed to remove theoxide semiconductor layer 530 where thephotoresists oxide semiconductor layer 530, the region corresponding to thetransmissive portion 503 is referred to as theactive layer 530A, and the region corresponding to thetranslucent portion 504 is referred to as thelower electrode portion 530B. Theactive layer 530A is spaced apart from thelower electrode portion 530B. - Subsequently, as shown in
FIG. 5D , a part of thephotoresist 541A on theactive layer 530A and thephotoresist 541B on thelower electrode portion 530B are removed by ashing process. After ashing process, thephotoresist 541B is removed to expose thelower electrode portion 530B, and a part ofphotoresist 541A remains on theactive layer 530A. - Then, the
lower electrode portion 530B is conductivized to form alower electrode 521 of a storage capacitor Cst S. Conductivizing process may include performing drying etching, hydrogen plasma treatment, helium plasma treatment and the like on thelower electrode portion 530B. Theactive layer 530A where thephotoresist 541A remains is not conductivized. Subsequently, thephotoresist 541A remaining on theactive layer 530A is stripped. - The patterning process and the conductivizing process of the
oxide semiconductor layer 530 illustrated inFIGS. 5A to 5D may be conducted by using various processes other than the process with the half-tone mask 501. For example, theoxide semiconductor layer 530 may be patterned or conductivized using two photo masks instead of the half-tone mask 501. - Then, referring to
FIG. 5E , agate insulation layer 512A is formed on theactive layer 530A, and afirst insulation layer 512B is formed on thelower electrode 521. Thegate insulation layer 512A and thefirst insulation layer 512B may be formed of the same material. And thefirst insulation layer 512B may be formed simultaneously with thegate insulation layer 512A. Thus, thefirst insulation layer 512B and gate insulation layer 512 may be referred to as a base insulation layer. - A
gate electrode 532 is formed on thegate insulation layer 512A, and anintermediate electrode 522 is formed on thefirst insulation layer 512B. In other words, thegate electrode 532 and theintermediate electrode 522 are formed on the base insulation layer. Thegate electrode 532 may be formed of the same material as theintermediate electrode 522. For example, a first conductive layer is deposited on the base insulation layer, and then, the first conductive layer is patterned to form thegate electrode 532 and theintermediate electrode 522 spaced apart from thegate electrode 532. Thegate electrode 532 overlaps with at least a part of theactive layer 530A. Theintermediate electrode 522 overlaps at least a part of thelower electrode 521. - In addition, exposed portions of the
active layer 530A are conductivized (S500). The exposed portions of theactive layer 530A mean the portions where theactive layer 530A is not overlapped with thegate electrode 532 or thegate insulation layer 512A. Herein, conductivizing the exposed portions of theactive layer 530A may be performed separately from conductivizing thelower electrode portion 530B for forming the above describedlower electrode 521. However, the process for conductivizing the exposed portions of theactive layer 530A and the process for conductivizing thelower electrode portion 530B may be performed simultaneously. - Then, referring to
FIG. 5F , anadditional insulation layer 513 is formed over thegate electrode 532 and theintermediate electrode 522. To be specific, an inter-insulation layer is formed on thegate electrode 532, and a second insulation layer is formed on theintermediate electrode 522. The second insulation layer may be formed simultaneously with inter-insulation layer. Thus, the inter-insulation layer and the second insulation layer may be referred to as theadditional insulation layer 513. - A
source electrode 533 and adrain electrode 534 are formed over theactive layer 530A. Further, an upper electrode 523 is formed over the intermediate electrode 522 (S600). Also, thesource electrode 533, thedrain electrode 534 and the upper electrode 523 are formed on theadditional insulation layer 513. The upper electrode 523 may be formed of the same material as thesource electrode 533 and thedrain electrode 534. For example, a second conductive layer is deposited on theadditional insulation layer 513. And then, the second conductive layer is patterned to form the source and drainelectrodes - The
source electrode 533 and thedrain electrode 534 are electrically connected to the conductivized regions of theactive layer 530A via contact holes in theadditional insulation layer 513, respectively. The upper electrode 523 is connected to thelower electrode 521 via a contact hole in theadditional insulation layer 513. Although thedrain electrode 534 and the upper electrode 523 are illustrated as being electrically connected to each other inFIG. 5F , the upper electrode 523 may be connected to thesource electrode 533 depending on the type of thin-film transistor. - The
lower electrode 521, theintermediate electrode 522 and thefirst insulation layer 512B therebetween form a first capacitor C1, and theintermediate electrode 522, the upper electrode 523 and theadditional insulation layer 513 therebetween forma second capacitor C2. In addition, thelower electrode 521 and the upper electrode 523 are connected to each other, and thus the first capacitor C1 and the second capacitor C2 operate in parallel. - In this specification, a substrate refers to a member that supports various elements formed thereon. The substrate may be comprised of an insulation material. For example, the substrate may be, but is not limited to, comprised of glass or plastic.
- In this specification, an oxide semiconductor layer may include various oxides that can be made conductivized. For example, in addition to the above-mentioned indium-gallium-zinc-oxide (InGaZnO), the oxide semiconductor may include: quaternary metal oxide such as indium-tin-gallium-zinc-oxide (InSnGaZnO) based material; ternary metal oxide such as indium-tin-zinc-oxide (InSnZnO) based material, indium-aluminum-zinc-oxide (InAlZnO) based material, indium-hafnium-zinc-oxide (InHfZnO) based material, tin-gallium-zinc-oxide (SnGaZnO) based material, aluminum-gallium-zinc-oxide (AlGaZnO) based material, and tin-aluminum-zinc-oxide based (SnAlZnO) material; binary metal oxide such as indium-zinc-oxide (InZnO) based material, tin-zinc-oxide (SnZnO) based material, aluminum-zinc-oxide (AlZnO) based material, zinc-magnesium-oxide (ZnMgO) based material, tin-magnesium-oxide (SnMgO) based material, indium-magnesium-oxide (InMgO) based material, and indium-gallium-oxide (InGaO) based material; mono metal oxide such as indium-oxide (InO) based material, tin-oxide (SnO) material, and zinc-oxide (ZnO) based material. The composition ratios between the elements in the above materials of the oxide semiconductor are not particularly limited but may be variously determined.
- In this specification, the conductive electrodes, i.e., the gate electrode, the source electrode, the drain electrode, the intermediate electrode, the upper electrode and the additional electrode may be comprised of, but are not limited to, molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof. In addition, the conductive electrodes, that is, the gate electrode, the source electrode, the drain electrode, the intermediate electrode, the upper electrode and the additional electrode may be multiple layers comprised of a material selected from a group consisting of molybdenum (Mo), aluminum (Al), chrome (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or an alloy thereof.
- Hereinafter, various embodiments of the organic light-emitting display device according to the present invention will be described.
- In some embodiments, the lower electrode, the first insulation layer and the intermediate electrode form a first capacitor, and the intermediate electrode, the second insulation layer and the upper electrode forma second capacitor, wherein the first capacitor and the second capacitor are connected to each other in parallel to forma storage capacitor.
- In some embodiments, capacitance of the first capacitor is larger than capacitance of the second capacitor.
- In some embodiments, the first insulation layer is thinner than the second insulation layer.
- In some embodiments, the display device further comprises an additional electrode on the upper electrode, at least a part of the additional electrode overlapping the upper electrode.
- In some embodiments, the additional electrode is connected to the intermediate electrode.
- In some embodiments, the coplanar thin-film transistor further comprises a gate insulation layer between the active layer and the gate electrode, wherein the first insulation layer is thinner than the gate insulation layer.
- In some embodiments, the coplanar thin-film transistor further comprises an inter-insulation layer between the gate electrode and the source electrode or the drain electrode, wherein the second insulation layer is thinner than the inter-insulation layer.
- In some embodiments, the intermediate electrode is connected to the gate electrode of the coplanar TFT.
- In some embodiments, the upper electrode is electrically connected to one of the source electrode or the drain electrode of the coplanar TFT.
- In some embodiments, the display device further comprises an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode.
- In some embodiments, the display device further comprises an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode, and a connection part interposed between the anode and one of the source electrode or drain electrode, the connection part being comprised of the same material as the additional electrode.
- In some embodiments, the display device further comprises a plurality of sub-pixels including a light-emitting region and a light-transmissive region, respectively, wherein the storage capacitor is positioned in the light-emitting region.
- In some embodiments, the storage capacitor in at least one of the plurality of sub-pixels has a size that is different from the size of the storage capacitor in another sub-pixel.
- According to an exemplary embodiment of the present disclosure, there is provided a method of manufacturing a displace device. The method of manufacturing a displace device comprises forming an oxide semiconductor layer on a substrate, patterning the oxide semiconductor layer to form an active layer and a lower electrode portion spaced apart from the active layer, conductivizing the lower electrode portion to form a lower electrode, forming a base insulation layer on the active layer and the lower electrode, forming a gate electrode and an intermediate electrode on the base insulation layer, forming an additional insulation layer over the gate electrode and the intermediate electrode, the additional insulation layer having a contact hole, and forming a source electrode, a drain electrode and an upper electrode, wherein the upper electrode connected to the lower electrode via the contact hole in the additional insulation layer.
- In some embodiments, the step of forming the gate electrode and the intermediate electrode comprises depositing a first conductive layer on the base insulation layer, and patterning the first conductive layer to form the gate electrode and the intermediate electrode spaced apart from the gate electrode.
- In some embodiments, the step of forming the source electrode, the drain electrode and the upper electrode comprises depositing a second conductive layer on the additional insulation layer, and patterning the second conductive layer to form the source and drain electrodes and the upper electrode.
- The present invention has been described in more detail with reference to the exemplary embodiments, but the present invention is not limited to the exemplary embodiments. It will be apparent to those skilled in the art that various modifications can be made without departing from the technical sprit of the invention. Accordingly, the exemplary embodiments disclosed in the present invention are used not to limit but to describe the technical spirit of the present invention, and the technical spirit of the present invention is not limited to the exemplary embodiments. Therefore, the exemplary embodiments described above are considered in all respects to be illustrative and not restrictive. The protection scope of the present invention must be interpreted by the appended claims and it should be interpreted that all technical spirits within a scope equivalent thereto are included in the appended claims of the present invention.
Claims (17)
1. A display device, comprising:
a coplanar thin-film transistor (TFT) on a substrate, the coplanar thin-film transistor comprising a gate electrode, an active layer including an oxide semiconductor, a source electrode and a drain electrode;
a lower electrode comprised of the same material as the active layer on the substrate, the lower electrode being conductivized;
a first insulation layer on the lower electrode;
an intermediate electrode comprised of the same material as the gate electrode, the intermediate electrode positioned on the first insulation layer and having at least a part overlapping with the lower electrode;
a second insulation layer on the intermediate electrode; and
an upper electrode comprised of the same material as the source electrode or as the drain electrode, the upper electrode positioned on the second insulation layer and having at least a part overlapping with the intermediate electrode, wherein the upper electrode is connected to the lower electrode.
2. The display device according to claim 1 , wherein the lower electrode, the first insulation layer and the intermediate electrode form a first capacitor, and the intermediate electrode, the second insulation layer and the upper electrode form a second capacitor, wherein the first capacitor and the second capacitor are connected to each other in parallel to form a storage capacitor.
3. The display device according to claim 2 , wherein capacitance of the first capacitor is larger than capacitance of the second capacitor.
4. The display device according to claim 3 , wherein the first insulation layer is thinner than the second insulation layer.
5. The display device according to claim 2 , further comprising:
an additional electrode on the upper electrode, at least a part of the additional electrode overlapping the upper electrode.
6. The display device according to claim 5 , wherein the additional electrode is connected to the intermediate electrode.
7. The display device according to claim 1 , wherein the coplanar thin-film transistor further comprises a gate insulation layer between the active layer and the gate electrode, wherein the first insulation layer is thinner than the gate insulation layer.
8. The display device according to claim 1 , wherein the coplanar thin-film transistor further comprises an inter-insulation layer between the gate electrode and the source electrode or the drain electrode, wherein the second insulation layer is thinner than the inter-insulation layer.
9. The display device according to claim 1 , wherein the intermediate electrode is connected to the gate electrode of the coplanar TFT.
10. The display device according to claim 1 , wherein the upper electrode is electrically connected to one of the source electrode or the drain electrode of the coplanar TFT.
11. The display device according to claim 10 , further comprising an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode.
12. The display device according to claim 6 , further comprising:
an organic light-emitting element including an anode that is electrically connected to the source or drain electrode connected to the upper electrode; and
a connection part interposed between the anode and one of the source electrode or drain electrode, the connection part being comprised of the same material as the additional electrode.
13. The display device according to claim 2 , further comprising a plurality of sub-pixels including a light-emitting region and a light-transmissive region, respectively, wherein the storage capacitor is positioned in the light-emitting region.
14. The device according to claim 2 , wherein the storage capacitor in at least one of the plurality of sub-pixels has a size that is different from the size of the storage capacitor in another sub-pixel.
15. A method of manufacturing a displace device comprising:
forming an oxide semiconductor layer on a substrate;
patterning the oxide semiconductor layer to form an active layer and a lower electrode portion spaced apart from the active layer;
conductivizing the lower electrode portion to form a lower electrode;
forming a base insulation layer on the active layer and the lower electrode;
forming a gate electrode and an intermediate electrode on the base insulation layer;
forming an additional insulation layer over the gate electrode and the intermediate electrode, the additional insulation layer having a contact hole; and
forming a source electrode, a drain electrode and an upper electrode, wherein the upper electrode connected to the lower electrode via the contact hole in the additional insulation layer.
16. The method according to claim 15 , wherein the step of forming the gate electrode and the intermediate electrode comprises:
depositing a first conductive layer on the base insulation layer; and
patterning the first conductive layer to form the gate electrode and the intermediate electrode spaced apart from the gate electrode.
17. The method according to claim 15 , wherein the step of forming the source electrode, the drain electrode and the upper electrode comprises:
depositing a second conductive layer on the additional insulation layer; and
patterning the second conductive layer to form the source and drain electrodes and the upper electrode.
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Also Published As
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CN104517996B (en) | 2018-02-13 |
KR20150041511A (en) | 2015-04-16 |
KR102137392B1 (en) | 2020-07-24 |
US9935163B2 (en) | 2018-04-03 |
CN104517996A (en) | 2015-04-15 |
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