FR2641116A1 - - Google Patents

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Publication number
FR2641116A1
FR2641116A1 FR8906481A FR8906481A FR2641116A1 FR 2641116 A1 FR2641116 A1 FR 2641116A1 FR 8906481 A FR8906481 A FR 8906481A FR 8906481 A FR8906481 A FR 8906481A FR 2641116 A1 FR2641116 A1 FR 2641116A1
Authority
FR
France
Prior art keywords
line
memory
transistor
floating gate
transistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR8906481A
Other languages
English (en)
French (fr)
Other versions
FR2641116B1 (OSRAM
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2641116A1 publication Critical patent/FR2641116A1/fr
Application granted granted Critical
Publication of FR2641116B1 publication Critical patent/FR2641116B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/40—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region
    • H10B41/41—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the peripheral circuit region of a memory region comprising a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/43—Layouts of interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
FR898906481A 1988-12-27 1989-05-18 Expired - Lifetime FR2641116B1 (OSRAM)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019880017566A KR910004166B1 (ko) 1988-12-27 1988-12-27 낸드쎌들을 가지는 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치

Publications (2)

Publication Number Publication Date
FR2641116A1 true FR2641116A1 (OSRAM) 1990-06-29
FR2641116B1 FR2641116B1 (OSRAM) 1994-09-02

Family

ID=19280720

Family Applications (1)

Application Number Title Priority Date Filing Date
FR898906481A Expired - Lifetime FR2641116B1 (OSRAM) 1988-12-27 1989-05-18

Country Status (6)

Country Link
US (1) US4962481A (OSRAM)
JP (1) JPH0632227B2 (OSRAM)
KR (1) KR910004166B1 (OSRAM)
DE (1) DE3908677A1 (OSRAM)
FR (1) FR2641116B1 (OSRAM)
GB (1) GB2226697B (OSRAM)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
EP0640982A3 (en) * 1993-08-27 1997-10-15 Toshiba Kk Non-volatile semiconductor memory device and data programming method.
US6304489B1 (en) 1993-08-27 2001-10-16 Hiroshi Iwahashi Non-volatile semiconductor memory device and data programming method

Families Citing this family (42)

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US5295096A (en) * 1988-07-11 1994-03-15 Mitsubishi Denki Kabushiki Kaisha NAND type EEPROM and operating method therefor
JP2718716B2 (ja) * 1988-09-30 1998-02-25 株式会社東芝 不揮発性半導体メモリ装置およびそのデータ書替え方法
KR940008228B1 (ko) * 1988-10-21 1994-09-08 가부시키가이샤 도시바 불휘발성 반도체 메모리 및 그 제조방법
KR910007434B1 (ko) * 1988-12-15 1991-09-26 삼성전자 주식회사 전기적으로 소거 및 프로그램 가능한 반도체 메모리장치 및 그 소거 및 프로그램 방법
US5066992A (en) * 1989-06-23 1991-11-19 Atmel Corporation Programmable and erasable MOS memory device
US5227652A (en) * 1990-08-21 1993-07-13 U.S. Philips Corp. Electrically programmable and erasable semiconductor memory and method of operating same
US5222040A (en) * 1990-12-11 1993-06-22 Nexcom Technology, Inc. Single transistor eeprom memory cell
US5345418A (en) * 1991-01-24 1994-09-06 Nexcom Technology, Inc. Single transistor EEPROM architecture
US5197027A (en) * 1991-01-24 1993-03-23 Nexcom Technology, Inc. Single transistor eeprom architecture
KR940008204B1 (ko) * 1991-08-14 1994-09-08 삼성전자 주식회사 낸드형 플래쉬 메모리의 과도소거 방지장치 및 방법
JP3083923B2 (ja) * 1992-10-23 2000-09-04 三星電子株式会社 メモリ素子のスタンバイ電流不良救済装置
JP3207592B2 (ja) * 1993-03-19 2001-09-10 株式会社東芝 不揮発性半導体記憶装置
JPH06290591A (ja) * 1993-03-31 1994-10-18 Sony Corp 半導体不揮発性記憶装置
KR960006748B1 (ko) * 1993-03-31 1996-05-23 삼성전자주식회사 고속동작 및 저전원공급전압에 적합한 쎌구조를 가지는 불휘발성 반도체 집적회로
KR100303061B1 (ko) * 1993-10-15 2001-11-22 이데이 노부유끼 비휘발성메모리장치와그제조방법
JP3450467B2 (ja) * 1993-12-27 2003-09-22 株式会社東芝 不揮発性半導体記憶装置及びその製造方法
KR100210985B1 (ko) * 1994-06-29 1999-07-15 니시무로 타이죠 불휘발성 반도체 기억장치
JP3238576B2 (ja) * 1994-08-19 2001-12-17 株式会社東芝 不揮発性半導体記憶装置
US5506816A (en) * 1994-09-06 1996-04-09 Nvx Corporation Memory cell array having compact word line arrangement
KR0170714B1 (ko) * 1995-12-20 1999-03-30 김광호 낸드형 플래쉬 메모리 소자 및 그 구동방법
KR970051170A (ko) * 1995-12-29 1997-07-29 김주용 메모리 셀 어레이 및 그를 이용한 프로그램 방법
KR100190089B1 (ko) * 1996-08-30 1999-06-01 윤종용 플래쉬 메모리장치 및 그 구동방법
KR100206709B1 (ko) * 1996-09-21 1999-07-01 윤종용 멀티비트 불휘발성 반도체 메모리의 셀 어레이의 구조 및 그의 구동방법
KR100242723B1 (ko) * 1997-08-12 2000-02-01 윤종용 불휘발성 반도체 메모리 장치의 셀 어레이 구조 및 그 제조방법
US6366501B1 (en) * 2000-02-29 2002-04-02 Advanced Micro Devices, Inc. Selective erasure of a non-volatile memory cell of a flash memory device
DE60122412T2 (de) * 2000-03-22 2007-05-03 Microchip Technology Inc., Chandler Verbessertes Programmierungsverfahren für eine Speicherzelle
US6771536B2 (en) * 2002-02-27 2004-08-03 Sandisk Corporation Operating techniques for reducing program and read disturbs of a non-volatile memory
US6906376B1 (en) * 2002-06-13 2005-06-14 A Plus Flash Technology, Inc. EEPROM cell structure and array architecture
JP4537680B2 (ja) * 2003-08-04 2010-09-01 株式会社東芝 不揮発性半導体記憶装置及びその動作方法、製造方法、半導体集積回路及びシステム
JP2006041174A (ja) * 2004-07-27 2006-02-09 Toshiba Corp 不揮発性半導体記憶装置
US7317116B2 (en) * 2004-12-10 2008-01-08 Archer-Daniels-Midland-Company Processes for the preparation and purification of hydroxymethylfuraldehyde and derivatives
KR100632953B1 (ko) * 2005-03-07 2006-10-12 삼성전자주식회사 메모리 소자, 상기 메모리 소자를 위한 메모리 배열 및 상기 메모리 배열의 구동 방법
KR100735753B1 (ko) 2005-10-04 2007-07-06 삼성전자주식회사 공유된 비트라인을 갖는 플래쉬 메모리 소자 및 그의제조방법
EP1814123A1 (en) * 2006-01-26 2007-08-01 Samsung Electronics Co.,Ltd. Nand-type nonvolatile memory device having common bit lines and methods of operating the same
US7554854B2 (en) * 2006-03-31 2009-06-30 Semiconductor Energy Laboratory Co., Ltd. Method for deleting data from NAND type nonvolatile memory
JP4866652B2 (ja) * 2006-05-10 2012-02-01 ルネサスエレクトロニクス株式会社 半導体記憶装置
KR100790493B1 (ko) * 2007-01-10 2008-01-03 삼성전자주식회사 비휘발성 메모리 소자 및 그 형성방법
TW200908301A (en) * 2007-08-08 2009-02-16 Nanya Technology Corp Flash memory
US8059458B2 (en) * 2007-12-31 2011-11-15 Cypress Semiconductor Corporation 3T high density nvDRAM cell
US8064255B2 (en) * 2007-12-31 2011-11-22 Cypress Semiconductor Corporation Architecture of a nvDRAM array and its sense regime
US20090302472A1 (en) * 2008-06-05 2009-12-10 Samsung Electronics Co., Ltd. Non-volatile memory devices including shared bit lines and methods of fabricating the same
KR102551350B1 (ko) * 2016-01-28 2023-07-04 삼성전자 주식회사 수직형 메모리 소자를 구비한 집적회로 소자 및 그 제조 방법

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US4233526A (en) * 1977-04-08 1980-11-11 Nippon Electric Co., Ltd. Semiconductor memory device having multi-gate transistors
JPS62219296A (ja) * 1986-03-20 1987-09-26 Hitachi Ltd 半導体集積回路装置

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
EP0640982A3 (en) * 1993-08-27 1997-10-15 Toshiba Kk Non-volatile semiconductor memory device and data programming method.
US6169690B1 (en) 1993-08-27 2001-01-02 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device
US6304489B1 (en) 1993-08-27 2001-10-16 Hiroshi Iwahashi Non-volatile semiconductor memory device and data programming method
US6353557B2 (en) 1993-08-27 2002-03-05 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6577539B2 (en) 1993-08-27 2003-06-10 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device with programming voltage generating system and data programming method
US6738293B1 (en) 1993-08-27 2004-05-18 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method
US6785166B2 (en) 1993-08-27 2004-08-31 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and data programming method

Also Published As

Publication number Publication date
KR910004166B1 (ko) 1991-06-22
GB2226697B (en) 1993-02-10
US4962481A (en) 1990-10-09
GB8921422D0 (en) 1989-11-08
JPH02177199A (ja) 1990-07-10
GB2226697A (en) 1990-07-04
DE3908677A1 (de) 1990-07-05
JPH0632227B2 (ja) 1994-04-27
KR900011009A (ko) 1990-07-11
FR2641116B1 (OSRAM) 1994-09-02

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