FR2614724B1 - Circuit de generation de tension de polarisation de substrat - Google Patents

Circuit de generation de tension de polarisation de substrat

Info

Publication number
FR2614724B1
FR2614724B1 FR8805669A FR8805669A FR2614724B1 FR 2614724 B1 FR2614724 B1 FR 2614724B1 FR 8805669 A FR8805669 A FR 8805669A FR 8805669 A FR8805669 A FR 8805669A FR 2614724 B1 FR2614724 B1 FR 2614724B1
Authority
FR
France
Prior art keywords
generating circuit
voltage generating
polarization voltage
substrate polarization
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR8805669A
Other languages
English (en)
Other versions
FR2614724A1 (fr
Inventor
Su-In Cho
Dong-Sun Min
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor and Telecomunications Co Ltd
Original Assignee
Samsung Semiconductor and Telecomunications Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor and Telecomunications Co Ltd filed Critical Samsung Semiconductor and Telecomunications Co Ltd
Publication of FR2614724A1 publication Critical patent/FR2614724A1/fr
Application granted granted Critical
Publication of FR2614724B1 publication Critical patent/FR2614724B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G11C5/146—Substrate bias generators
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
FR8805669A 1987-04-30 1988-04-28 Circuit de generation de tension de polarisation de substrat Expired - Lifetime FR2614724B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019870004241A KR890005159B1 (ko) 1987-04-30 1987-04-30 백 바이어스 전압 발생기

Publications (2)

Publication Number Publication Date
FR2614724A1 FR2614724A1 (fr) 1988-11-04
FR2614724B1 true FR2614724B1 (fr) 1992-12-31

Family

ID=19261097

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8805669A Expired - Lifetime FR2614724B1 (fr) 1987-04-30 1988-04-28 Circuit de generation de tension de polarisation de substrat

Country Status (7)

Country Link
US (1) US4920280A (fr)
JP (1) JPH01165090A (fr)
KR (1) KR890005159B1 (fr)
DE (1) DE3814667A1 (fr)
FR (1) FR2614724B1 (fr)
GB (1) GB2204456B (fr)
NL (1) NL194688C (fr)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0289357A (ja) * 1988-09-27 1990-03-29 Nec Corp 半導体回路
JPH02215154A (ja) * 1989-02-16 1990-08-28 Toshiba Corp 電圧制御回路
KR920010749B1 (ko) * 1989-06-10 1992-12-14 삼성전자 주식회사 반도체 집적소자의 내부전압 변환회로
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
US5267201A (en) * 1990-04-06 1993-11-30 Mosaid, Inc. High voltage boosted word line supply charge pump regulator for DRAM
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
ATE137872T1 (de) * 1991-02-21 1996-05-15 Siemens Ag Regelschaltung für einen substratvorspannungsgenerator
KR940003153B1 (ko) * 1991-04-12 1994-04-15 금성일렉트론 주식회사 백바이어스 발생회로
DE4130191C2 (de) * 1991-09-30 1993-10-21 Samsung Electronics Co Ltd Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung
WO1993012525A1 (fr) * 1991-12-09 1993-06-24 Fujitsu Limited Memoire flash aux caracteristiques d'effacement ameliorees et circuit pour une telle memoire
US5260646A (en) * 1991-12-23 1993-11-09 Micron Technology, Inc. Low power regulator for a voltage generator circuit
JP2632112B2 (ja) * 1992-07-27 1997-07-23 三菱電機株式会社 電圧発生回路
EP0582125B1 (fr) * 1992-08-04 1998-01-28 Siemens Aktiengesellschaft Circuit de commande pour un MOSFET de puissance ayant une charge connectée à la source
US5355028A (en) * 1992-10-23 1994-10-11 Micron Technology, Inc. Lower power CMOS buffer amplifier for use in integrated circuit substrate bias generators
US5811990A (en) * 1993-10-15 1998-09-22 Micron Technology, Inc. Voltage pump and a level translator circuit
US5629843A (en) * 1993-10-15 1997-05-13 Micron Technology, Inc. Self compensating clamp circuit and method for limiting a potential at a pump circuit node
DE69328623T2 (de) * 1993-11-30 2001-02-08 St Microelectronics Srl Stabile Referenzspannungsgeneratorschaltung
KR100307514B1 (ko) * 1994-07-30 2001-12-01 김영환 차지펌프회로
JP3102833B2 (ja) * 1994-09-06 2000-10-23 株式会社 沖マイクロデザイン 昇圧回路
US5627458A (en) * 1995-07-14 1997-05-06 Nevin; Larry J. Integrated negative D-C bias circuit
US6064250A (en) 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
EP1028363B1 (fr) * 1996-07-29 2003-02-12 Townsend and Townsend and Crew LLP Pompage de charges pour un substrat semi-conducteur
KR100560665B1 (ko) 2003-07-02 2006-03-16 삼성전자주식회사 독출 방지 기능을 갖는 반도체 메모리 장치
KR100649973B1 (ko) * 2005-09-14 2006-11-27 주식회사 하이닉스반도체 내부 전압 발생 장치
TWI407694B (zh) * 2010-01-27 2013-09-01 Novatek Microelectronics Corp 可抑制電壓過衝之輸出緩衝電路及方法
US10678287B2 (en) 2018-10-15 2020-06-09 Globalfoundries Inc. Positive and negative full-range back-bias generator circuit structure

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6044752B2 (ja) * 1978-04-24 1985-10-05 日本電気株式会社 ダイナミツクメモリ
US4307307A (en) * 1979-08-09 1981-12-22 Parekh Rajesh H Bias control for transistor circuits incorporating substrate bias generators
JPS56110252A (en) * 1980-02-05 1981-09-01 Nippon Telegr & Teleph Corp <Ntt> Semiconductor memory device
JPS57199335A (en) * 1981-06-02 1982-12-07 Toshiba Corp Generating circuit for substrate bias
US4438346A (en) * 1981-10-15 1984-03-20 Advanced Micro Devices, Inc. Regulated substrate bias generator for random access memory
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
US4433253A (en) * 1981-12-10 1984-02-21 Standard Microsystems Corporation Three-phase regulated high-voltage charge pump
JPS60261099A (ja) * 1984-06-07 1985-12-24 Mitsubishi Electric Corp 半導体記憶装置
US4631421A (en) * 1984-08-14 1986-12-23 Texas Instruments CMOS substrate bias generator
JPS61217991A (ja) * 1985-03-25 1986-09-27 Hitachi Ltd 半導体メモリ
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits

Also Published As

Publication number Publication date
DE3814667A1 (de) 1988-11-17
DE3814667C2 (fr) 1993-09-16
NL8801058A (nl) 1988-11-16
KR880013166A (ko) 1988-11-30
GB2204456A (en) 1988-11-09
GB8810391D0 (en) 1988-06-08
GB2204456B (en) 1991-08-14
JPH01165090A (ja) 1989-06-29
FR2614724A1 (fr) 1988-11-04
NL194688C (nl) 2002-11-04
NL194688B (nl) 2002-07-01
KR890005159B1 (ko) 1989-12-14
US4920280A (en) 1990-04-24

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