DE3668716D1 - Halbleitersubstratvorspannungsgenerator. - Google Patents
Halbleitersubstratvorspannungsgenerator.Info
- Publication number
- DE3668716D1 DE3668716D1 DE8686101710T DE3668716T DE3668716D1 DE 3668716 D1 DE3668716 D1 DE 3668716D1 DE 8686101710 T DE8686101710 T DE 8686101710T DE 3668716 T DE3668716 T DE 3668716T DE 3668716 D1 DE3668716 D1 DE 3668716D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor substrate
- substrate bias
- bias generator
- generator
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/713,668 US4701637A (en) | 1985-03-19 | 1985-03-19 | Substrate bias generators |
Publications (1)
Publication Number | Publication Date |
---|---|
DE3668716D1 true DE3668716D1 (de) | 1990-03-08 |
Family
ID=24867016
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8686101710T Expired - Fee Related DE3668716D1 (de) | 1985-03-19 | 1986-02-11 | Halbleitersubstratvorspannungsgenerator. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4701637A (de) |
EP (1) | EP0195236B1 (de) |
JP (1) | JPS61218156A (de) |
CA (1) | CA1256950A (de) |
DE (1) | DE3668716D1 (de) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6445157A (en) * | 1987-08-13 | 1989-02-17 | Toshiba Corp | Semiconductor integrated circuit |
US5196739A (en) * | 1991-04-03 | 1993-03-23 | National Semiconductor Corporation | High voltage charge pump |
US5394026A (en) * | 1993-02-02 | 1995-02-28 | Motorola Inc. | Substrate bias generating circuit |
US6232826B1 (en) * | 1998-01-12 | 2001-05-15 | Intel Corporation | Charge pump avoiding gain degradation due to the body effect |
US6069825A (en) * | 1998-09-16 | 2000-05-30 | Turbo Ic, Inc. | Charge pump for word lines in programmable semiconductor memory array |
US6037622A (en) * | 1999-03-29 | 2000-03-14 | Winbond Electronics Corporation | Charge pump circuits for low supply voltages |
JP3910765B2 (ja) * | 1999-09-08 | 2007-04-25 | 株式会社東芝 | 電圧発生回路及びこれを用いた電圧転送回路 |
US6510062B2 (en) * | 2001-06-25 | 2003-01-21 | Switch Power, Inc. | Method and circuit to bias output-side width modulation control in an isolating voltage converter system |
JP2011205797A (ja) * | 2010-03-25 | 2011-10-13 | Toshiba Corp | 昇圧回路 |
EP3200235A1 (de) * | 2016-01-28 | 2017-08-02 | Nxp B.V. | Halbleiterschaltvorrichtung und verfahren zur herstellung einer halbleiterschaltvorrichtung |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4229667A (en) * | 1978-08-23 | 1980-10-21 | Rockwell International Corporation | Voltage boosting substrate bias generator |
JPS55162257A (en) * | 1979-06-05 | 1980-12-17 | Fujitsu Ltd | Semiconductor element having substrate bias generator circuit |
JPS5632758A (en) * | 1979-08-27 | 1981-04-02 | Fujitsu Ltd | Substrate bias generating circuit |
US4336466A (en) * | 1980-06-30 | 1982-06-22 | Inmos Corporation | Substrate bias generator |
US4322675A (en) * | 1980-11-03 | 1982-03-30 | Fairchild Camera & Instrument Corp. | Regulated MOS substrate bias voltage generator for a static random access memory |
US4403158A (en) * | 1981-05-15 | 1983-09-06 | Inmos Corporation | Two-way regulated substrate bias generator |
JPS57199335A (en) * | 1981-06-02 | 1982-12-07 | Toshiba Corp | Generating circuit for substrate bias |
JPS57204640A (en) * | 1981-06-12 | 1982-12-15 | Fujitsu Ltd | Generating circuit of substrate bias voltage |
US4438346A (en) * | 1981-10-15 | 1984-03-20 | Advanced Micro Devices, Inc. | Regulated substrate bias generator for random access memory |
US4571505A (en) * | 1983-11-16 | 1986-02-18 | Inmos Corporation | Method and apparatus of reducing latch-up susceptibility in CMOS integrated circuits |
-
1985
- 1985-03-19 US US06/713,668 patent/US4701637A/en not_active Expired - Fee Related
- 1985-06-25 CA CA000485184A patent/CA1256950A/en not_active Expired
- 1985-10-15 JP JP60227935A patent/JPS61218156A/ja active Granted
-
1986
- 1986-02-11 DE DE8686101710T patent/DE3668716D1/de not_active Expired - Fee Related
- 1986-02-11 EP EP86101710A patent/EP0195236B1/de not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US4701637A (en) | 1987-10-20 |
CA1256950A (en) | 1989-07-04 |
JPS61218156A (ja) | 1986-09-27 |
JPH0344423B2 (de) | 1991-07-05 |
EP0195236A3 (en) | 1986-11-20 |
EP0195236B1 (de) | 1990-01-31 |
EP0195236A2 (de) | 1986-09-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |