FR2555774B1 - Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ - Google Patents

Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ

Info

Publication number
FR2555774B1
FR2555774B1 FR8418097A FR8418097A FR2555774B1 FR 2555774 B1 FR2555774 B1 FR 2555774B1 FR 8418097 A FR8418097 A FR 8418097A FR 8418097 A FR8418097 A FR 8418097A FR 2555774 B1 FR2555774 B1 FR 2555774B1
Authority
FR
France
Prior art keywords
circuit
substrate
field effect
effect transistors
polarization voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8418097A
Other languages
English (en)
Other versions
FR2555774A1 (fr
Inventor
Paolo Rosini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of FR2555774A1 publication Critical patent/FR2555774A1/fr
Application granted granted Critical
Publication of FR2555774B1 publication Critical patent/FR2555774B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Automation & Control Theory (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
FR8418097A 1983-11-30 1984-11-28 Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ Expired FR2555774B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (it) 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo

Publications (2)

Publication Number Publication Date
FR2555774A1 FR2555774A1 (fr) 1985-05-31
FR2555774B1 true FR2555774B1 (fr) 1989-01-13

Family

ID=11210957

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8418097A Expired FR2555774B1 (fr) 1983-11-30 1984-11-28 Circuit regulateur de la tension de polarisation du substrat d'un circuit integre a transistors a effet de champ

Country Status (6)

Country Link
JP (1) JPS60157248A (fr)
KR (1) KR850004357A (fr)
DE (1) DE3443868A1 (fr)
FR (1) FR2555774B1 (fr)
GB (1) GB2151823A (fr)
IT (1) IT1220982B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS6033314B2 (ja) * 1979-11-22 1985-08-02 富士通株式会社 基板バイアス電圧発生回路
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Also Published As

Publication number Publication date
FR2555774A1 (fr) 1985-05-31
KR850004357A (ko) 1985-07-11
GB8430148D0 (en) 1985-01-09
IT8323930A0 (it) 1983-11-30
GB2151823A (en) 1985-07-24
IT1220982B (it) 1990-06-21
JPS60157248A (ja) 1985-08-17
DE3443868A1 (de) 1985-06-13

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Legal Events

Date Code Title Description
CD Change of name or company name
D6 Patent endorsed licences of rights
ST Notification of lapse