DE3443868A1 - Regelschaltung fuer die vorspannung des substrates einer integrierten schaltung mit feldeffekttransistoren - Google Patents

Regelschaltung fuer die vorspannung des substrates einer integrierten schaltung mit feldeffekttransistoren

Info

Publication number
DE3443868A1
DE3443868A1 DE19843443868 DE3443868A DE3443868A1 DE 3443868 A1 DE3443868 A1 DE 3443868A1 DE 19843443868 DE19843443868 DE 19843443868 DE 3443868 A DE3443868 A DE 3443868A DE 3443868 A1 DE3443868 A1 DE 3443868A1
Authority
DE
Germany
Prior art keywords
substrate
voltage
circuit
oscillator
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19843443868
Other languages
German (de)
English (en)
Inventor
Paolo Dr. Monza Mailand/Milano Rosini
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of DE3443868A1 publication Critical patent/DE3443868A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Electrical Variables (AREA)
DE19843443868 1983-11-30 1984-11-30 Regelschaltung fuer die vorspannung des substrates einer integrierten schaltung mit feldeffekttransistoren Withdrawn DE3443868A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT23930/83A IT1220982B (it) 1983-11-30 1983-11-30 Circuito regolatore della tensione di polarizzazione del substrato di un circuito integrato a transistori a effetto di campo

Publications (1)

Publication Number Publication Date
DE3443868A1 true DE3443868A1 (de) 1985-06-13

Family

ID=11210957

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19843443868 Withdrawn DE3443868A1 (de) 1983-11-30 1984-11-30 Regelschaltung fuer die vorspannung des substrates einer integrierten schaltung mit feldeffekttransistoren

Country Status (6)

Country Link
JP (1) JPS60157248A (fr)
KR (1) KR850004357A (fr)
DE (1) DE3443868A1 (fr)
FR (1) FR2555774B1 (fr)
GB (1) GB2151823A (fr)
IT (1) IT1220982B (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2966592D1 (en) * 1979-03-05 1984-03-01 Motorola Inc Substrate bias regulator
JPS6033314B2 (ja) * 1979-11-22 1985-08-02 富士通株式会社 基板バイアス電圧発生回路
JPS5694654A (en) * 1979-12-27 1981-07-31 Toshiba Corp Generating circuit for substrate bias voltage
US4322675A (en) * 1980-11-03 1982-03-30 Fairchild Camera & Instrument Corp. Regulated MOS substrate bias voltage generator for a static random access memory

Also Published As

Publication number Publication date
IT1220982B (it) 1990-06-21
KR850004357A (ko) 1985-07-11
IT8323930A0 (it) 1983-11-30
GB2151823A (en) 1985-07-24
GB8430148D0 (en) 1985-01-09
JPS60157248A (ja) 1985-08-17
FR2555774A1 (fr) 1985-05-31
FR2555774B1 (fr) 1989-01-13

Similar Documents

Publication Publication Date Title
DE3220721C2 (fr)
DE3872762T2 (de) Referenzspannungsgeneratorschaltung.
DE3881850T2 (de) Schaltung zur Erzeugung einer Zwischenspannung zwischen einer Versorgungsspannung und einer Erdspannung.
DE69634711T2 (de) VBB-Referenz für spannungsgepümptes Substrat
DE69323818T2 (de) Vorrichtung zur Erzeugung einer MOS temperaturkompensierten Referenzspannung für niedrige Spannungen und grosse Betriebsspannungsbereiche
DE68912979T2 (de) CMOS-Spannungsmultiplikator.
DE69609104T2 (de) Referenzstromgenerator in CMOS-Technologie
DE4037206A1 (de) Quellspannungssteuerschaltkreis
DE1537263A1 (de) Transistortreiberschaltung mit kapazitiver Rueckkopplung
DE69420326T2 (de) Einschaltrücksetzschaltung
DE2254618A1 (de) Schaltungsanordnung zur referenzspannungserzeugung
DE2547871A1 (de) Kompensator fuer integrierte halbleiterschaltungen
DE69306195T2 (de) Schaltung zum Ziehen des Eingangs einer integrierten Schaltung auf einen definierten Zustand
DE2550107A1 (de) Schaltungsanordnung mit feldeffekttransistoren
DE2855303A1 (de) Linearer verstaerker
DE102019209071A1 (de) Spannungsgenerator
DE4017617C2 (de) Spannungserzeugungsschaltung mit geringer Leistungsaufnahme und stabiler Ausgangsspannung bei kleiner Schaltkreisfläche
DE69028230T2 (de) Integrierte Halbleiterschaltung mit einer Substratspannungsdetektorschaltung
DE3586568T2 (de) Halbleitereinrichtung.
DE69031751T2 (de) Integrierte Halbleiterschaltung mit einem intrinsischen MOS-Transistor zum Erzeugen einer Referenzspannung
EP0648019A2 (fr) Circuit CMOS à tenue en tension élevée
DE102004027298B4 (de) Auf dem Chip ausgeführter Hochpassfilter mit großer Zeitkonstanten
EP0499673A1 (fr) Circuit de commande pour un générateur de tension d'un substrat
DE2745302C2 (de) Schaltungsanordnung zur Kontrolle der Versorgungsspannung für vorzugsweise integrierte Schaltkreise
DE2749051A1 (de) Mos-eingangspuffer mit hysteresis

Legal Events

Date Code Title Description
8128 New person/name/address of the agent

Representative=s name: KLUNKER, H., DIPL.-ING. DR.RER.NAT. SCHMITT-NILSON

8139 Disposal/non-payment of the annual fee