DE69028230T2 - Integrierte Halbleiterschaltung mit einer Substratspannungsdetektorschaltung - Google Patents

Integrierte Halbleiterschaltung mit einer Substratspannungsdetektorschaltung

Info

Publication number
DE69028230T2
DE69028230T2 DE69028230T DE69028230T DE69028230T2 DE 69028230 T2 DE69028230 T2 DE 69028230T2 DE 69028230 T DE69028230 T DE 69028230T DE 69028230 T DE69028230 T DE 69028230T DE 69028230 T2 DE69028230 T2 DE 69028230T2
Authority
DE
Germany
Prior art keywords
circuit
voltage detector
integrated semiconductor
substrate voltage
detector circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69028230T
Other languages
English (en)
Other versions
DE69028230D1 (de
Inventor
Masaru Koyanagi
Minoru Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Device Solutions Corp
Original Assignee
Toshiba Corp
Toshiba Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Microelectronics Corp filed Critical Toshiba Corp
Publication of DE69028230D1 publication Critical patent/DE69028230D1/de
Application granted granted Critical
Publication of DE69028230T2 publication Critical patent/DE69028230T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators
DE69028230T 1989-03-22 1990-03-21 Integrierte Halbleiterschaltung mit einer Substratspannungsdetektorschaltung Expired - Fee Related DE69028230T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1069826A JPH0783254B2 (ja) 1989-03-22 1989-03-22 半導体集積回路

Publications (2)

Publication Number Publication Date
DE69028230D1 DE69028230D1 (de) 1996-10-02
DE69028230T2 true DE69028230T2 (de) 1997-02-06

Family

ID=13413952

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69028230T Expired - Fee Related DE69028230T2 (de) 1989-03-22 1990-03-21 Integrierte Halbleiterschaltung mit einer Substratspannungsdetektorschaltung

Country Status (5)

Country Link
US (1) US5057704A (de)
EP (1) EP0388918B1 (de)
JP (1) JPH0783254B2 (de)
KR (1) KR930009027B1 (de)
DE (1) DE69028230T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2585450B2 (ja) * 1990-04-18 1997-02-26 東芝マイクロエレクトロニクス株式会社 半導体回路装置
US5341035A (en) * 1990-06-04 1994-08-23 Matsushita Electric Industrial Co., Ltd. Substrate potential generator
JP2841917B2 (ja) * 1991-05-23 1998-12-24 松下電器産業株式会社 基板電位発生回路
FR2677771A1 (fr) * 1991-06-17 1992-12-18 Samsung Electronics Co Ltd Circuit de detection de niveau de polarisation inverse dans un dispositif de memoire a semiconducteurs.
JP2876854B2 (ja) * 1991-10-25 1999-03-31 日本電気株式会社 電位検出回路
JP2982591B2 (ja) * 1993-12-17 1999-11-22 日本電気株式会社 基板電位検知回路
KR0127318B1 (ko) * 1994-04-13 1998-04-02 문정환 백바이어스전압 발생기
US5642272A (en) * 1994-10-21 1997-06-24 Texas Instruments Incorporated Apparatus and method for device power-up using counter-enabled drivers
JPH09205153A (ja) * 1996-01-26 1997-08-05 Toshiba Corp 基板電位検出回路
JP3533306B2 (ja) * 1996-04-02 2004-05-31 株式会社東芝 半導体集積回路装置
US6064250A (en) * 1996-07-29 2000-05-16 Townsend And Townsend And Crew Llp Various embodiments for a low power adaptive charge pump circuit
US6466082B1 (en) * 2000-05-17 2002-10-15 Advanced Micro Devices, Inc. Circuit technique to deal with floating body effects
US7061049B2 (en) * 2001-06-12 2006-06-13 Kabushiki Kaisha Toshiba Semiconductor device using SOI device and semiconductor integrated circuit using the semiconductor device
US20060119382A1 (en) * 2004-12-07 2006-06-08 Shumarayev Sergey Y Apparatus and methods for adjusting performance characteristics of programmable logic devices
US7330049B2 (en) * 2006-03-06 2008-02-12 Altera Corporation Adjustable transistor body bias generation circuitry with latch-up prevention
JP2008118098A (ja) * 2006-10-11 2008-05-22 Matsushita Electric Ind Co Ltd 半導体集積回路の動作解析方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4322679A (en) * 1980-04-07 1982-03-30 Canadian Patents & Dev. Limited Alternating current comparator bridge for resistance measurement
US4439692A (en) * 1981-12-07 1984-03-27 Signetics Corporation Feedback-controlled substrate bias generator
US4473758A (en) * 1983-02-07 1984-09-25 Motorola Inc. Substrate bias control circuit and method
NL8402764A (nl) * 1984-09-11 1986-04-01 Philips Nv Schakeling voor het opwekken van een substraatvoorspanning.
DE3681540D1 (de) * 1985-08-26 1991-10-24 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator.
JPH0691457B2 (ja) * 1986-02-17 1994-11-14 三洋電機株式会社 基板バイアス発生回路
DE3777938D1 (de) * 1986-09-30 1992-05-07 Siemens Ag Integrierte schaltung in komplementaerer schaltungstechnik mit einem substratvorspannungs-generator.
NL8701278A (nl) * 1987-05-29 1988-12-16 Philips Nv Geintegreerde cmos-schakeling met een substraatvoorspanningsgenerator.
US4794278A (en) * 1987-12-30 1988-12-27 Intel Corporation Stable substrate bias generator for MOS circuits
JPH0817033B2 (ja) * 1988-12-08 1996-02-21 三菱電機株式会社 基板バイアス電位発生回路

Also Published As

Publication number Publication date
EP0388918A1 (de) 1990-09-26
JPH02249262A (ja) 1990-10-05
US5057704A (en) 1991-10-15
DE69028230D1 (de) 1996-10-02
JPH0783254B2 (ja) 1995-09-06
EP0388918B1 (de) 1996-08-28
KR900015314A (ko) 1990-10-26
KR930009027B1 (ko) 1993-09-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee