NL194688C - Instelspanningsbron. - Google Patents
Instelspanningsbron. Download PDFInfo
- Publication number
- NL194688C NL194688C NL8801058A NL8801058A NL194688C NL 194688 C NL194688 C NL 194688C NL 8801058 A NL8801058 A NL 8801058A NL 8801058 A NL8801058 A NL 8801058A NL 194688 C NL194688 C NL 194688C
- Authority
- NL
- Netherlands
- Prior art keywords
- voltage
- node
- bias voltage
- output
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
- H03K5/01—Shaping pulses
- H03K5/08—Shaping pulses by limiting; by thresholding; by slicing, i.e. combined limiting and thresholding
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019870004241A KR890005159B1 (ko) | 1987-04-30 | 1987-04-30 | 백 바이어스 전압 발생기 |
KR870004241 | 1987-04-30 |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8801058A NL8801058A (nl) | 1988-11-16 |
NL194688B NL194688B (nl) | 2002-07-01 |
NL194688C true NL194688C (nl) | 2002-11-04 |
Family
ID=19261097
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8801058A NL194688C (nl) | 1987-04-30 | 1988-04-22 | Instelspanningsbron. |
Country Status (7)
Country | Link |
---|---|
US (1) | US4920280A (fr) |
JP (1) | JPH01165090A (fr) |
KR (1) | KR890005159B1 (fr) |
DE (1) | DE3814667A1 (fr) |
FR (1) | FR2614724B1 (fr) |
GB (1) | GB2204456B (fr) |
NL (1) | NL194688C (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0289357A (ja) * | 1988-09-27 | 1990-03-29 | Nec Corp | 半導体回路 |
JPH02215154A (ja) * | 1989-02-16 | 1990-08-28 | Toshiba Corp | 電圧制御回路 |
KR920010749B1 (ko) * | 1989-06-10 | 1992-12-14 | 삼성전자 주식회사 | 반도체 집적소자의 내부전압 변환회로 |
US5267201A (en) * | 1990-04-06 | 1993-11-30 | Mosaid, Inc. | High voltage boosted word line supply charge pump regulator for DRAM |
GB9007790D0 (en) | 1990-04-06 | 1990-06-06 | Lines Valerie L | Dynamic memory wordline driver scheme |
GB9007791D0 (en) | 1990-04-06 | 1990-06-06 | Foss Richard C | High voltage boosted wordline supply charge pump and regulator for dram |
JP2805991B2 (ja) * | 1990-06-25 | 1998-09-30 | ソニー株式会社 | 基板バイアス発生回路 |
ATE137872T1 (de) * | 1991-02-21 | 1996-05-15 | Siemens Ag | Regelschaltung für einen substratvorspannungsgenerator |
KR940003153B1 (ko) * | 1991-04-12 | 1994-04-15 | 금성일렉트론 주식회사 | 백바이어스 발생회로 |
DE4130191C2 (de) * | 1991-09-30 | 1993-10-21 | Samsung Electronics Co Ltd | Konstantspannungsgenerator für eine Halbleitereinrichtung mit kaskadierter Auflade- bzw. Entladeschaltung |
DE69232211T2 (de) * | 1991-12-09 | 2002-06-27 | Fujitsu Ltd | Flash-Speicher mit besserer Löschbarkeit und dessen Schaltung |
US5260646A (en) * | 1991-12-23 | 1993-11-09 | Micron Technology, Inc. | Low power regulator for a voltage generator circuit |
JP2632112B2 (ja) * | 1992-07-27 | 1997-07-23 | 三菱電機株式会社 | 電圧発生回路 |
EP0582125B1 (fr) * | 1992-08-04 | 1998-01-28 | Siemens Aktiengesellschaft | Circuit de commande pour un MOSFET de puissance ayant une charge connectée à la source |
US5355028A (en) * | 1992-10-23 | 1994-10-11 | Micron Technology, Inc. | Lower power CMOS buffer amplifier for use in integrated circuit substrate bias generators |
US5629843A (en) * | 1993-10-15 | 1997-05-13 | Micron Technology, Inc. | Self compensating clamp circuit and method for limiting a potential at a pump circuit node |
US5811990A (en) * | 1993-10-15 | 1998-09-22 | Micron Technology, Inc. | Voltage pump and a level translator circuit |
EP0655669B1 (fr) * | 1993-11-30 | 2000-05-10 | STMicroelectronics S.r.l. | Circuit de génération de tension de référence stable |
KR100307514B1 (ko) * | 1994-07-30 | 2001-12-01 | 김영환 | 차지펌프회로 |
JP3102833B2 (ja) * | 1994-09-06 | 2000-10-23 | 株式会社 沖マイクロデザイン | 昇圧回路 |
US5627458A (en) * | 1995-07-14 | 1997-05-06 | Nevin; Larry J. | Integrated negative D-C bias circuit |
US6064250A (en) | 1996-07-29 | 2000-05-16 | Townsend And Townsend And Crew Llp | Various embodiments for a low power adaptive charge pump circuit |
EP1028363B1 (fr) * | 1996-07-29 | 2003-02-12 | Townsend and Townsend and Crew LLP | Pompage de charges pour un substrat semi-conducteur |
KR100560665B1 (ko) | 2003-07-02 | 2006-03-16 | 삼성전자주식회사 | 독출 방지 기능을 갖는 반도체 메모리 장치 |
KR100649973B1 (ko) * | 2005-09-14 | 2006-11-27 | 주식회사 하이닉스반도체 | 내부 전압 발생 장치 |
TWI407694B (zh) * | 2010-01-27 | 2013-09-01 | Novatek Microelectronics Corp | 可抑制電壓過衝之輸出緩衝電路及方法 |
US10678287B2 (en) | 2018-10-15 | 2020-06-09 | Globalfoundries Inc. | Positive and negative full-range back-bias generator circuit structure |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6044752B2 (ja) * | 1978-04-24 | 1985-10-05 | 日本電気株式会社 | ダイナミツクメモリ |
US4307307A (en) * | 1979-08-09 | 1981-12-22 | Parekh Rajesh H | Bias control for transistor circuits incorporating substrate bias generators |
JPS56110252A (en) * | 1980-02-05 | 1981-09-01 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
JPS57199335A (en) * | 1981-06-02 | 1982-12-07 | Toshiba Corp | Generating circuit for substrate bias |
US4438346A (en) * | 1981-10-15 | 1984-03-20 | Advanced Micro Devices, Inc. | Regulated substrate bias generator for random access memory |
US4439692A (en) * | 1981-12-07 | 1984-03-27 | Signetics Corporation | Feedback-controlled substrate bias generator |
US4433253A (en) * | 1981-12-10 | 1984-02-21 | Standard Microsystems Corporation | Three-phase regulated high-voltage charge pump |
JPS60261099A (ja) * | 1984-06-07 | 1985-12-24 | Mitsubishi Electric Corp | 半導体記憶装置 |
US4631421A (en) * | 1984-08-14 | 1986-12-23 | Texas Instruments | CMOS substrate bias generator |
JPS61217991A (ja) * | 1985-03-25 | 1986-09-27 | Hitachi Ltd | 半導体メモリ |
US4794278A (en) * | 1987-12-30 | 1988-12-27 | Intel Corporation | Stable substrate bias generator for MOS circuits |
-
1987
- 1987-04-30 KR KR1019870004241A patent/KR890005159B1/ko not_active IP Right Cessation
-
1988
- 1988-04-21 JP JP63099289A patent/JPH01165090A/ja active Pending
- 1988-04-22 NL NL8801058A patent/NL194688C/nl not_active IP Right Cessation
- 1988-04-28 DE DE3814667A patent/DE3814667A1/de active Granted
- 1988-04-28 FR FR8805669A patent/FR2614724B1/fr not_active Expired - Lifetime
- 1988-04-29 US US07/187,930 patent/US4920280A/en not_active Expired - Lifetime
- 1988-05-03 GB GB8810391A patent/GB2204456B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2614724B1 (fr) | 1992-12-31 |
US4920280A (en) | 1990-04-24 |
DE3814667C2 (fr) | 1993-09-16 |
NL194688B (nl) | 2002-07-01 |
KR890005159B1 (ko) | 1989-12-14 |
GB8810391D0 (en) | 1988-06-08 |
GB2204456B (en) | 1991-08-14 |
NL8801058A (nl) | 1988-11-16 |
KR880013166A (ko) | 1988-11-30 |
JPH01165090A (ja) | 1989-06-29 |
DE3814667A1 (de) | 1988-11-17 |
FR2614724A1 (fr) | 1988-11-04 |
GB2204456A (en) | 1988-11-09 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A1A | A request for search or an international-type search has been filed | ||
CNR | Transfer of rights (patent application after its laying open for public inspection) |
Free format text: SAMSUNG ELECTRONICS CO., LTD. |
|
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20080422 |