KR870003573A - 기판전위 생성회로 - Google Patents

기판전위 생성회로

Info

Publication number
KR870003573A
KR870003573A KR1019860007816A KR860007816A KR870003573A KR 870003573 A KR870003573 A KR 870003573A KR 1019860007816 A KR1019860007816 A KR 1019860007816A KR 860007816 A KR860007816 A KR 860007816A KR 870003573 A KR870003573 A KR 870003573A
Authority
KR
South Korea
Prior art keywords
generation circuit
substrate potential
potential generation
substrate
circuit
Prior art date
Application number
KR1019860007816A
Other languages
English (en)
Other versions
KR900002911B1 (ko
Inventor
요시오 오카다
Original Assignee
가부시끼가이샤 도오시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도오시바 filed Critical 가부시끼가이샤 도오시바
Publication of KR870003573A publication Critical patent/KR870003573A/ko
Application granted granted Critical
Publication of KR900002911B1 publication Critical patent/KR900002911B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205—Substrate bias-voltage generators

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Electromagnetism (AREA)
  • Nonlinear Science (AREA)
  • Automation & Control Theory (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dram (AREA)
KR1019860007816A 1985-09-19 1986-09-17 기판전위 생성회로 KR900002911B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60-206981 1985-09-19
JP60206981A JPS6266656A (ja) 1985-09-19 1985-09-19 基板電位生成回路

Publications (2)

Publication Number Publication Date
KR870003573A true KR870003573A (ko) 1987-04-18
KR900002911B1 KR900002911B1 (ko) 1990-05-03

Family

ID=16532197

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019860007816A KR900002911B1 (ko) 1985-09-19 1986-09-17 기판전위 생성회로

Country Status (5)

Country Link
US (1) US4740715A (ko)
EP (1) EP0215429B1 (ko)
JP (1) JPS6266656A (ko)
KR (1) KR900002911B1 (ko)
DE (1) DE3664170D1 (ko)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3743930A1 (de) * 1987-12-23 1989-07-06 Siemens Ag Integrierte schaltung mit "latch-up"-schutzschaltung in komplementaerer mos-schaltungstechnik
NL8702734A (nl) * 1987-11-17 1989-06-16 Philips Nv Spanningsvermenigvuldigschakeling en gelijkrichtelement.
JPH07105472B2 (ja) * 1988-07-29 1995-11-13 株式会社東芝 入力保護回路
JP2780365B2 (ja) * 1989-08-14 1998-07-30 日本電気株式会社 基板電位発生回路
WO1991016728A1 (en) * 1990-04-13 1991-10-31 Kabushiki Kaisha Toshiba Substrate structure of a semiconductor device
JP2805991B2 (ja) * 1990-06-25 1998-09-30 ソニー株式会社 基板バイアス発生回路
JP2575956B2 (ja) * 1991-01-29 1997-01-29 株式会社東芝 基板バイアス回路
US5126590A (en) * 1991-06-17 1992-06-30 Micron Technology, Inc. High efficiency charge pump
KR940003301B1 (ko) * 1991-12-20 1994-04-20 주식회사 금성사 Ce버스 심볼 엔코딩 처리회로
KR950002726B1 (ko) * 1992-03-30 1995-03-24 삼성전자주식회사 기판전압 발생기의 전하 펌프 회로
DE69408665T2 (de) * 1994-08-12 1998-10-15 Cons Ric Microelettronica Spannungserhöher vom Ladungspumpentype
JP3244601B2 (ja) * 1994-12-09 2002-01-07 富士通株式会社 半導体集積回路
US5801579A (en) * 1997-02-28 1998-09-01 Advanced Micro Devices, Inc. High voltage NMOS pass gate for integrated circuit with high voltage generator
DE19924568B4 (de) * 1999-05-28 2014-05-22 Qimonda Ag Ladungspumpe

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2812378C2 (de) * 1978-03-21 1982-04-29 Siemens AG, 1000 Berlin und 8000 München Substratvorspannungsgenerator für integrierte MIS-Schaltkreise
US4283642A (en) * 1979-09-10 1981-08-11 National Semiconductor Corporation Regulation of current through depletion devices in a MOS integrated circuit
US4307333A (en) * 1980-07-29 1981-12-22 Sperry Corporation Two way regulating circuit
US4559548A (en) * 1981-04-07 1985-12-17 Tokyo Shibaura Denki Kabushiki Kaisha CMOS Charge pump free of parasitic injection
JPS58122766A (ja) * 1982-01-14 1983-07-21 Toshiba Corp 半導体装置
US4591738A (en) * 1983-10-27 1986-05-27 International Business Machines Corporation Charge pumping circuit

Also Published As

Publication number Publication date
JPS6266656A (ja) 1987-03-26
EP0215429A1 (en) 1987-03-25
EP0215429B1 (en) 1989-06-28
KR900002911B1 (ko) 1990-05-03
DE3664170D1 (en) 1989-08-03
US4740715A (en) 1988-04-26
JPH035064B2 (ko) 1991-01-24

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Legal Events

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