FR2452789A1 - Transistor a effet de champ - Google Patents

Transistor a effet de champ

Info

Publication number
FR2452789A1
FR2452789A1 FR8007109A FR8007109A FR2452789A1 FR 2452789 A1 FR2452789 A1 FR 2452789A1 FR 8007109 A FR8007109 A FR 8007109A FR 8007109 A FR8007109 A FR 8007109A FR 2452789 A1 FR2452789 A1 FR 2452789A1
Authority
FR
France
Prior art keywords
effect transistor
source
drain regions
field effect
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR8007109A
Other languages
English (en)
French (fr)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Honeywell Inc
Original Assignee
Honeywell Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Inc filed Critical Honeywell Inc
Publication of FR2452789A1 publication Critical patent/FR2452789A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/765—Making of isolation regions between components by field effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having significant overlap between the lightly-doped extensions and the gate electrode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
FR8007109A 1979-03-28 1980-03-28 Transistor a effet de champ Withdrawn FR2452789A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2484079A 1979-03-28 1979-03-28

Publications (1)

Publication Number Publication Date
FR2452789A1 true FR2452789A1 (fr) 1980-10-24

Family

ID=21822678

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8007109A Withdrawn FR2452789A1 (fr) 1979-03-28 1980-03-28 Transistor a effet de champ

Country Status (5)

Country Link
JP (1) JPS55132054A (enrdf_load_stackoverflow)
CA (1) CA1142271A (enrdf_load_stackoverflow)
DE (1) DE3011778A1 (enrdf_load_stackoverflow)
FR (1) FR2452789A1 (enrdf_load_stackoverflow)
GB (1) GB2045525A (enrdf_load_stackoverflow)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4429237A (en) 1981-03-20 1984-01-31 International Business Machines Corp. High voltage on chip FET driver
JPS57204172A (en) * 1981-06-08 1982-12-14 Ibm Field effect transistor
DE3382294D1 (de) * 1982-02-22 1991-07-04 Toshiba Kawasaki Kk Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen.
JPS5984572A (ja) * 1982-11-08 1984-05-16 Nec Corp 半導体装置
US5087591A (en) * 1985-01-22 1992-02-11 Texas Instruments Incorporated Contact etch process
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
EP0242540A1 (en) * 1986-04-21 1987-10-28 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits
JPS63104466A (ja) * 1986-10-22 1988-05-09 Mitsubishi Electric Corp Ｍｏｓ型ダイナミツクｒａｍ
US5047820A (en) * 1988-09-14 1991-09-10 Micrel, Inc. Semi self-aligned high voltage P channel FET
US4885627A (en) * 1988-10-18 1989-12-05 International Business Machines Corporation Method and structure for reducing resistance in integrated circuits
JP2720624B2 (ja) * 1991-04-26 1998-03-04 日本電気株式会社 Ｍｏｓ集積回路
JP2690244B2 (ja) * 1992-08-20 1997-12-10 松下電子工業株式会社 Ｍｉｓ型高耐圧トランジスタおよびその製造方法
US6552389B2 (en) 2000-12-14 2003-04-22 Kabushiki Kaisha Toshiba Offset-gate-type semiconductor device
JP2007214398A (ja) * 2006-02-10 2007-08-23 Nec Corp 半導体集積回路
JP2009212110A (ja) * 2008-02-29 2009-09-17 Renesas Technology Corp トランジスタおよびその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5435757B2 (enrdf_load_stackoverflow) * 1974-02-15 1979-11-05

Also Published As

Publication number Publication date
JPH0332234B2 (enrdf_load_stackoverflow) 1991-05-10
GB2045525A (en) 1980-10-29
DE3011778A1 (de) 1980-10-09
CA1142271A (en) 1983-03-01
JPS55132054A (en) 1980-10-14

Similar Documents

Publication Publication Date Title
FR2452789A1 (fr) Transistor a effet de champ
KR950012770A (ko) 반도체장치 및 그 제조방법
FR2433240A1 (fr) Transistor a effet de champ mos pour des tensions assez elevees
JPS53980A (en) Field-effect transistor of high dielectric strength
CA2009068A1 (en) Trench jfet integrated circuit elements
KR910010731A (ko) 반도체장치 및 그 제조방법
JPS57204171A (en) Semiconductor device
JPS54101680A (en) Semiconductor device
KR930009127A (ko) Mos형 트랜지스터 반도체 장치 및 그 제조방법
KR960030429A (ko) 박막트랜지스터 액정 디스플레이 소자 및 그 제조방법
GB2254187A (en) Positive control of the source/drain-gate overlap in self-aligned tfts via a top hat gate electrode configuration
JPS55130170A (en) Semiconductor device and method of fabricating the same
JPS56126977A (en) Junction type field effect transistor
JPS54137286A (en) Semiconductor device
JPS6450470A (en) Field-effect transistor
JPS5772386A (en) Junction type field-effect semiconductor device
KR890001197A (ko) 반도체 장치 제조방법
JPS5718364A (en) Mis field-effect transistor
JPS57199268A (en) Junction type field effect transistor
JPS6437058A (en) Insulated-gate field-effect transistor
JPS6450568A (en) Semiconductor device
JPS57106078A (en) Mos semiconductor device
JPS57154875A (en) Mos semiconductor device
JPS57114287A (en) Semiconductor device
JPS5712560A (en) Semiconductor device

Legal Events

Date Code Title Description
ST Notification of lapse
RE Withdrawal of published application