CA1142271A - Field effect semiconductor device - Google Patents
Field effect semiconductor deviceInfo
- Publication number
- CA1142271A CA1142271A CA000347291A CA347291A CA1142271A CA 1142271 A CA1142271 A CA 1142271A CA 000347291 A CA000347291 A CA 000347291A CA 347291 A CA347291 A CA 347291A CA 1142271 A CA1142271 A CA 1142271A
- Authority
- CA
- Canada
- Prior art keywords
- region
- major surface
- surface portion
- portions
- field
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005669 field effect Effects 0.000 title claims abstract description 189
- 239000004065 semiconductor Substances 0.000 title claims abstract description 179
- 239000002019 doping agent Substances 0.000 claims abstract description 50
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 239000000463 material Substances 0.000 claims description 174
- 230000015556 catabolic process Effects 0.000 claims description 69
- 238000000034 method Methods 0.000 claims description 54
- 230000002441 reversible effect Effects 0.000 claims description 39
- 238000005468 ion implantation Methods 0.000 claims description 14
- 238000009826 distribution Methods 0.000 claims description 12
- 239000011159 matrix material Substances 0.000 claims description 12
- 150000002500 ions Chemical class 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 7
- QHGVXILFMXYDRS-UHFFFAOYSA-N pyraclofos Chemical compound C1=C(OP(=O)(OCC)SCCC)C=NN1C1=CC=C(Cl)C=C1 QHGVXILFMXYDRS-UHFFFAOYSA-N 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 93
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 56
- 229920005591 polysilicon Polymers 0.000 description 55
- 239000004020 conductor Substances 0.000 description 51
- 235000012239 silicon dioxide Nutrition 0.000 description 46
- 239000000377 silicon dioxide Substances 0.000 description 45
- 229960001866 silicon dioxide Drugs 0.000 description 45
- 230000008569 process Effects 0.000 description 34
- 230000005684 electric field Effects 0.000 description 24
- 229920002120 photoresistant polymer Polymers 0.000 description 24
- 125000004429 atom Chemical group 0.000 description 20
- 238000004519 manufacturing process Methods 0.000 description 19
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 230000001965 increasing effect Effects 0.000 description 15
- 229910052698 phosphorus Inorganic materials 0.000 description 14
- 235000014786 phosphorus Nutrition 0.000 description 14
- 239000011574 phosphorus Substances 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 12
- 238000013461 design Methods 0.000 description 11
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052796 boron Inorganic materials 0.000 description 10
- 238000009792 diffusion process Methods 0.000 description 10
- 238000002513 implantation Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 239000000243 solution Substances 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 230000006872 improvement Effects 0.000 description 5
- -1 phosphorus ions Chemical class 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 239000007943 implant Substances 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- PBAYDYUZOSNJGU-UHFFFAOYSA-N chelidonic acid Natural products OC(=O)C1=CC(=O)C=C(C(O)=O)O1 PBAYDYUZOSNJGU-UHFFFAOYSA-N 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 230000000873 masking effect Effects 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 125000004437 phosphorous atom Chemical group 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000005234 chemical deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 235000011007 phosphoric acid Nutrition 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 description 1
- SYQQWGGBOQFINV-FBWHQHKGSA-N 4-[2-[(2s,8s,9s,10r,13r,14s,17r)-10,13-dimethyl-17-[(2r)-6-methylheptan-2-yl]-3-oxo-1,2,6,7,8,9,11,12,14,15,16,17-dodecahydrocyclopenta[a]phenanthren-2-yl]ethoxy]-4-oxobutanoic acid Chemical compound C1CC2=CC(=O)[C@H](CCOC(=O)CCC(O)=O)C[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2 SYQQWGGBOQFINV-FBWHQHKGSA-N 0.000 description 1
- ODPOAESBSUKMHD-UHFFFAOYSA-L 6,7-dihydrodipyrido[1,2-b:1',2'-e]pyrazine-5,8-diium;dibromide Chemical compound [Br-].[Br-].C1=CC=[N+]2CC[N+]3=CC=CC=C3C2=C1 ODPOAESBSUKMHD-UHFFFAOYSA-L 0.000 description 1
- 101150071146 COX2 gene Proteins 0.000 description 1
- 101100114534 Caenorhabditis elegans ctc-2 gene Proteins 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- 239000005630 Diquat Substances 0.000 description 1
- 235000012571 Ficus glomerata Nutrition 0.000 description 1
- 240000000365 Ficus racemosa Species 0.000 description 1
- 101150000187 PTGS2 gene Proteins 0.000 description 1
- 235000015125 Sterculia urens Nutrition 0.000 description 1
- 101150068246 V-MOS gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000002939 deleterious effect Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000013178 mathematical model Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229910021339 platinum silicide Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000001131 transforming effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/111—Field plates
- H10D64/112—Field plates comprising multiple field plate segments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/765—Making of isolation regions between components by field effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs
- H10D30/605—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs having significant overlap between the lightly-doped extensions and the gate electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/611—Insulated-gate field-effect transistors [IGFET] having multiple independently-addressable gate electrodes influencing the same channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
- H10D64/311—Gate electrodes for field-effect devices
- H10D64/411—Gate electrodes for field-effect devices for FETs
- H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
- H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
- H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Element Separation (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Local Oxidation Of Silicon (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CA000405052A CA1151774A (en) | 1979-03-28 | 1982-06-11 | Field effect semiconductor device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US2484079A | 1979-03-28 | 1979-03-28 | |
| US024,840 | 1979-03-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CA1142271A true CA1142271A (en) | 1983-03-01 |
Family
ID=21822678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CA000347291A Expired CA1142271A (en) | 1979-03-28 | 1980-03-07 | Field effect semiconductor device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS55132054A (enrdf_load_stackoverflow) |
| CA (1) | CA1142271A (enrdf_load_stackoverflow) |
| DE (1) | DE3011778A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2452789A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2045525A (enrdf_load_stackoverflow) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4429237A (en) | 1981-03-20 | 1984-01-31 | International Business Machines Corp. | High voltage on chip FET driver |
| JPS57204172A (en) * | 1981-06-08 | 1982-12-14 | Ibm | Field effect transistor |
| DE3382294D1 (de) * | 1982-02-22 | 1991-07-04 | Toshiba Kawasaki Kk | Mittel zum verhindern des durchbruchs einer isolierschicht in halbleiteranordnungen. |
| JPS5984572A (ja) * | 1982-11-08 | 1984-05-16 | Nec Corp | 半導体装置 |
| US5087591A (en) * | 1985-01-22 | 1992-02-11 | Texas Instruments Incorporated | Contact etch process |
| US4734752A (en) * | 1985-09-27 | 1988-03-29 | Advanced Micro Devices, Inc. | Electrostatic discharge protection device for CMOS integrated circuit outputs |
| EP0242540A1 (en) * | 1986-04-21 | 1987-10-28 | International Business Machines Corporation | Method and structure for reducing resistance in integrated circuits |
| JPS63104466A (ja) * | 1986-10-22 | 1988-05-09 | Mitsubishi Electric Corp | Ｍｏｓ型ダイナミツクｒａｍ |
| US5047820A (en) * | 1988-09-14 | 1991-09-10 | Micrel, Inc. | Semi self-aligned high voltage P channel FET |
| US4885627A (en) * | 1988-10-18 | 1989-12-05 | International Business Machines Corporation | Method and structure for reducing resistance in integrated circuits |
| JP2720624B2 (ja) * | 1991-04-26 | 1998-03-04 | 日本電気株式会社 | Ｍｏｓ集積回路 |
| JP2690244B2 (ja) * | 1992-08-20 | 1997-12-10 | 松下電子工業株式会社 | Ｍｉｓ型高耐圧トランジスタおよびその製造方法 |
| US6552389B2 (en) | 2000-12-14 | 2003-04-22 | Kabushiki Kaisha Toshiba | Offset-gate-type semiconductor device |
| JP2007214398A (ja) * | 2006-02-10 | 2007-08-23 | Nec Corp | 半導体集積回路 |
| JP2009212110A (ja) * | 2008-02-29 | 2009-09-17 | Renesas Technology Corp | トランジスタおよびその製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5435757B2 (enrdf_load_stackoverflow) * | 1974-02-15 | 1979-11-05 |
-
1980
- 1980-03-07 CA CA000347291A patent/CA1142271A/en not_active Expired
- 1980-03-26 GB GB8010180A patent/GB2045525A/en not_active Withdrawn
- 1980-03-27 DE DE19803011778 patent/DE3011778A1/de not_active Withdrawn
- 1980-03-28 JP JP4112580A patent/JPS55132054A/ja active Granted
- 1980-03-28 FR FR8007109A patent/FR2452789A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0332234B2 (enrdf_load_stackoverflow) | 1991-05-10 |
| GB2045525A (en) | 1980-10-29 |
| FR2452789A1 (fr) | 1980-10-24 |
| DE3011778A1 (de) | 1980-10-09 |
| JPS55132054A (en) | 1980-10-14 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MKEX | Expiry |