FR2382744A1 - Dispositif de charge a courant extremement faible pour un circuit integre - Google Patents

Dispositif de charge a courant extremement faible pour un circuit integre

Info

Publication number
FR2382744A1
FR2382744A1 FR7735027A FR7735027A FR2382744A1 FR 2382744 A1 FR2382744 A1 FR 2382744A1 FR 7735027 A FR7735027 A FR 7735027A FR 7735027 A FR7735027 A FR 7735027A FR 2382744 A1 FR2382744 A1 FR 2382744A1
Authority
FR
France
Prior art keywords
integrated circuit
charging device
extremely low
low current
current charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735027A
Other languages
English (en)
French (fr)
Other versions
FR2382744B1 (cg-RX-API-DMAC10.html
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of FR2382744A1 publication Critical patent/FR2382744A1/fr
Application granted granted Critical
Publication of FR2382744B1 publication Critical patent/FR2382744B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H10W20/01—
    • H10W20/20—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
FR7735027A 1976-11-22 1977-11-22 Dispositif de charge a courant extremement faible pour un circuit integre Granted FR2382744A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74381076A 1976-11-22 1976-11-22

Publications (2)

Publication Number Publication Date
FR2382744A1 true FR2382744A1 (fr) 1978-09-29
FR2382744B1 FR2382744B1 (cg-RX-API-DMAC10.html) 1984-01-06

Family

ID=24990283

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7735027A Granted FR2382744A1 (fr) 1976-11-22 1977-11-22 Dispositif de charge a courant extremement faible pour un circuit integre
FR7818586A Granted FR2382771A1 (fr) 1976-11-22 1978-06-21 Structure semi-conductrice pour circuit integre

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7818586A Granted FR2382771A1 (fr) 1976-11-22 1978-06-21 Structure semi-conductrice pour circuit integre

Country Status (5)

Country Link
JP (6) JPS5389382A (cg-RX-API-DMAC10.html)
DE (1) DE2751481C2 (cg-RX-API-DMAC10.html)
FR (2) FR2382744A1 (cg-RX-API-DMAC10.html)
GB (2) GB1597725A (cg-RX-API-DMAC10.html)
IT (1) IT1090938B (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
EP0032608A1 (en) * 1980-01-22 1981-07-29 Mostek Corporation Column line powered static ram cell
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
US4446613A (en) * 1981-10-19 1984-05-08 Intel Corporation Integrated circuit resistor and method of fabrication
JPS61134054A (ja) * 1984-12-04 1986-06-21 Nec Corp 半導体装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
FR2269199A1 (cg-RX-API-DMAC10.html) * 1974-04-25 1975-11-21 Rca Corp
DE2537564A1 (de) * 1974-08-29 1976-03-11 Centre Electron Horloger Integrierte schaltung mit komplementaeren feldeffekt-transistoren

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710578B2 (cg-RX-API-DMAC10.html) * 1972-06-20 1982-02-26
JPS584459B2 (ja) 1973-06-01 1983-01-26 株式会社日立製作所 フリツプフロツプ回路装置
DE2733514A1 (de) * 1976-07-26 1978-02-09 Hitachi Ltd Halbleiter-vorrichtungen

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
FR2269199A1 (cg-RX-API-DMAC10.html) * 1974-04-25 1975-11-21 Rca Corp
DE2537564A1 (de) * 1974-08-29 1976-03-11 Centre Electron Horloger Integrierte schaltung mit komplementaeren feldeffekt-transistoren

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/73 *

Also Published As

Publication number Publication date
GB1597726A (en) 1981-09-09
JPS5886763A (ja) 1983-05-24
IT1090938B (it) 1985-06-26
JP2692439B2 (ja) 1997-12-17
JPS5389382A (en) 1978-08-05
DE2751481A1 (de) 1978-06-08
FR2382744B1 (cg-RX-API-DMAC10.html) 1984-01-06
JPH06188389A (ja) 1994-07-08
DE2751481C2 (de) 1986-10-23
FR2382771A1 (fr) 1978-09-29
JP2696110B2 (ja) 1998-01-14
FR2382771B1 (cg-RX-API-DMAC10.html) 1985-04-19
JPS6159360U (cg-RX-API-DMAC10.html) 1986-04-21
JPH0613577A (ja) 1994-01-21
GB1597725A (en) 1981-09-09
JPS60181055U (ja) 1985-12-02

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Legal Events

Date Code Title Description
TP Transmission of property
CA Change of address
CD Change of name or company name
TP Transmission of property