FR2382771A1 - Structure semi-conductrice pour circuit integre - Google Patents
Structure semi-conductrice pour circuit integreInfo
- Publication number
- FR2382771A1 FR2382771A1 FR7818586A FR7818586A FR2382771A1 FR 2382771 A1 FR2382771 A1 FR 2382771A1 FR 7818586 A FR7818586 A FR 7818586A FR 7818586 A FR7818586 A FR 7818586A FR 2382771 A1 FR2382771 A1 FR 2382771A1
- Authority
- FR
- France
- Prior art keywords
- semiconductor structure
- integrated circuit
- semiconductor material
- defining
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000463 material Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 2
- 239000007858 starting material Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
Structure semi-conductrice, caractérisée en ce qu'elle comprend, un substrat semi-conducteur monocrystallin en un matériau de départ d'un premier type de conductivité, un corps de matériau semi-conducteur polycrystallin disposé au-dessus du substrat, le corps polycrystallin comportant une région en un matériau semi-conducteur intrinsèque définissant un premier trajet conducteur et une région en un matériau semi-conducteur extrinsèque définissant un second trajet conducteur, les premier et second trajets conducteurs définissant un trajet électrique en série pour le passage d'un courant à travers le corps polycrystallin, une jonction intrinsèque-extrinsèque étant définie à l'interface des premier et second trajets conducteurs.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74381076A | 1976-11-22 | 1976-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2382771A1 true FR2382771A1 (fr) | 1978-09-29 |
FR2382771B1 FR2382771B1 (fr) | 1985-04-19 |
Family
ID=24990283
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7735027A Granted FR2382744A1 (fr) | 1976-11-22 | 1977-11-22 | Dispositif de charge a courant extremement faible pour un circuit integre |
FR7818586A Granted FR2382771A1 (fr) | 1976-11-22 | 1978-06-21 | Structure semi-conductrice pour circuit integre |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7735027A Granted FR2382744A1 (fr) | 1976-11-22 | 1977-11-22 | Dispositif de charge a courant extremement faible pour un circuit integre |
Country Status (5)
Country | Link |
---|---|
JP (6) | JPS5389382A (fr) |
DE (1) | DE2751481C2 (fr) |
FR (2) | FR2382744A1 (fr) |
GB (2) | GB1597725A (fr) |
IT (1) | IT1090938B (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4453175A (en) * | 1979-09-19 | 1984-06-05 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Static RAM layout with polysilicon resistors over FET gates |
EP0032608A1 (fr) * | 1980-01-22 | 1981-07-29 | Mostek Corporation | Circuit de mémoire vive statique alimentée par les conducteurs de colonne |
JPS57130461A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor memory storage |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
JPS61134054A (ja) * | 1984-12-04 | 1986-06-21 | Nec Corp | 半導体装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
GB1391959A (en) * | 1972-07-20 | 1975-04-23 | Ferranti Ltd | Semiconductor devices |
FR2269199A1 (fr) * | 1974-04-25 | 1975-11-21 | Rca Corp | |
DE2537564A1 (de) * | 1974-08-29 | 1976-03-11 | Centre Electron Horloger | Integrierte schaltung mit komplementaeren feldeffekt-transistoren |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1318856A (en) * | 1971-03-18 | 1973-05-31 | Ferranti Ltd | Semiconductor devices |
JPS5710578B2 (fr) * | 1972-06-20 | 1982-02-26 | ||
JPS584459B2 (ja) | 1973-06-01 | 1983-01-26 | 株式会社日立製作所 | フリツプフロツプ回路装置 |
DE2733514A1 (de) * | 1976-07-26 | 1978-02-09 | Hitachi Ltd | Halbleiter-vorrichtungen |
-
1977
- 1977-11-18 DE DE2751481A patent/DE2751481C2/de not_active Expired
- 1977-11-21 JP JP13978177A patent/JPS5389382A/ja active Pending
- 1977-11-21 IT IT51886/77A patent/IT1090938B/it active
- 1977-11-21 GB GB48383/77A patent/GB1597725A/en not_active Expired
- 1977-11-21 GB GB39787/78A patent/GB1597726A/en not_active Expired
- 1977-11-22 FR FR7735027A patent/FR2382744A1/fr active Granted
-
1978
- 1978-06-21 FR FR7818586A patent/FR2382771A1/fr active Granted
-
1982
- 1982-10-18 JP JP57182678A patent/JPS5886763A/ja active Pending
-
1985
- 1985-04-22 JP JP1985060174U patent/JPS60181055U/ja active Pending
- 1985-07-01 JP JP1985100415U patent/JPS6159360U/ja active Pending
-
1991
- 1991-08-09 JP JP3200909A patent/JP2696110B2/ja not_active Expired - Lifetime
- 1991-08-09 JP JP3200925A patent/JP2692439B2/ja not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
GB1391959A (en) * | 1972-07-20 | 1975-04-23 | Ferranti Ltd | Semiconductor devices |
FR2269199A1 (fr) * | 1974-04-25 | 1975-11-21 | Rca Corp | |
DE2537564A1 (de) * | 1974-08-29 | 1976-03-11 | Centre Electron Horloger | Integrierte schaltung mit komplementaeren feldeffekt-transistoren |
Non-Patent Citations (1)
Title |
---|
EXBK/73 * |
Also Published As
Publication number | Publication date |
---|---|
JPS5886763A (ja) | 1983-05-24 |
GB1597726A (en) | 1981-09-09 |
JPS5389382A (en) | 1978-08-05 |
JPS6159360U (fr) | 1986-04-21 |
IT1090938B (it) | 1985-06-26 |
JP2696110B2 (ja) | 1998-01-14 |
GB1597725A (en) | 1981-09-09 |
JPS60181055U (ja) | 1985-12-02 |
JPH0613577A (ja) | 1994-01-21 |
FR2382771B1 (fr) | 1985-04-19 |
JPH06188389A (ja) | 1994-07-08 |
DE2751481C2 (de) | 1986-10-23 |
FR2382744B1 (fr) | 1984-01-06 |
FR2382744A1 (fr) | 1978-09-29 |
JP2692439B2 (ja) | 1997-12-17 |
DE2751481A1 (de) | 1978-06-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address | ||
CD | Change of name or company name | ||
TP | Transmission of property |