JPS5389382A - Ic memory and method of producing same - Google Patents

Ic memory and method of producing same

Info

Publication number
JPS5389382A
JPS5389382A JP13978177A JP13978177A JPS5389382A JP S5389382 A JPS5389382 A JP S5389382A JP 13978177 A JP13978177 A JP 13978177A JP 13978177 A JP13978177 A JP 13978177A JP S5389382 A JPS5389382 A JP S5389382A
Authority
JP
Japan
Prior art keywords
memory
producing same
producing
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13978177A
Other languages
English (en)
Inventor
Jiyooji Matsukenii Baanon
Chiu Chiyan Tsuiu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of JPS5389382A publication Critical patent/JPS5389382A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP13978177A 1976-11-22 1977-11-21 Ic memory and method of producing same Pending JPS5389382A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74381076A 1976-11-22 1976-11-22

Publications (1)

Publication Number Publication Date
JPS5389382A true JPS5389382A (en) 1978-08-05

Family

ID=24990283

Family Applications (6)

Application Number Title Priority Date Filing Date
JP13978177A Pending JPS5389382A (en) 1976-11-22 1977-11-21 Ic memory and method of producing same
JP57182678A Pending JPS5886763A (ja) 1976-11-22 1982-10-18 半導体インピ−ダンス構造とその製作方法
JP1985060174U Pending JPS60181055U (ja) 1976-11-22 1985-04-22 半導体インピーダンス構造
JP1985100415U Pending JPS6159360U (ja) 1976-11-22 1985-07-01
JP3200925A Expired - Lifetime JP2692439B2 (ja) 1976-11-22 1991-08-09 集積回路２進メモリセル
JP3200909A Expired - Lifetime JP2696110B2 (ja) 1976-11-22 1991-08-09 半導体インピーダンス装置

Family Applications After (5)

Application Number Title Priority Date Filing Date
JP57182678A Pending JPS5886763A (ja) 1976-11-22 1982-10-18 半導体インピ−ダンス構造とその製作方法
JP1985060174U Pending JPS60181055U (ja) 1976-11-22 1985-04-22 半導体インピーダンス構造
JP1985100415U Pending JPS6159360U (ja) 1976-11-22 1985-07-01
JP3200925A Expired - Lifetime JP2692439B2 (ja) 1976-11-22 1991-08-09 集積回路２進メモリセル
JP3200909A Expired - Lifetime JP2696110B2 (ja) 1976-11-22 1991-08-09 半導体インピーダンス装置

Country Status (5)

Country Link
JP (6) JPS5389382A (ja)
DE (1) DE2751481C2 (ja)
FR (2) FR2382744A1 (ja)
GB (2) GB1597726A (ja)
IT (1) IT1090938B (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5877253A (ja) * 1981-10-19 1983-05-10 インテル・コーポレーシヨン 集積回路抵抗の作成方法
JPS61134054A (ja) * 1984-12-04 1986-06-21 Nec Corp 半導体装置
US4907057A (en) * 1979-09-19 1990-03-06 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0032608A1 (en) * 1980-01-22 1981-07-29 Mostek Corporation Column line powered static ram cell
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
JPS5710578B2 (ja) * 1972-06-20 1982-02-26
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
JPS584459B2 (ja) 1973-06-01 1983-01-26 株式会社日立製作所 フリツプフロツプ回路装置
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
CH581904A5 (ja) * 1974-08-29 1976-11-15 Centre Electron Horloger
DE2760086C2 (ja) * 1976-07-26 1988-02-18 Hitachi, Ltd., Tokio/Tokyo, Jp

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4907057A (en) * 1979-09-19 1990-03-06 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor device
JPS5877253A (ja) * 1981-10-19 1983-05-10 インテル・コーポレーシヨン 集積回路抵抗の作成方法
JPH0468786B2 (ja) * 1981-10-19 1992-11-04 Intel Corp
JPS61134054A (ja) * 1984-12-04 1986-06-21 Nec Corp 半導体装置

Also Published As

Publication number Publication date
FR2382771B1 (ja) 1985-04-19
GB1597725A (en) 1981-09-09
DE2751481C2 (de) 1986-10-23
GB1597726A (en) 1981-09-09
FR2382744A1 (fr) 1978-09-29
JPS5886763A (ja) 1983-05-24
JPH06188389A (ja) 1994-07-08
JP2696110B2 (ja) 1998-01-14
FR2382744B1 (ja) 1984-01-06
JP2692439B2 (ja) 1997-12-17
FR2382771A1 (fr) 1978-09-29
JPS6159360U (ja) 1986-04-21
IT1090938B (it) 1985-06-26
JPS60181055U (ja) 1985-12-02
JPH0613577A (ja) 1994-01-21
DE2751481A1 (de) 1978-06-08

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