DE2751481C2 - Lastimpedanz für eine statische Halbleiterspeicherzelle - Google Patents

Lastimpedanz für eine statische Halbleiterspeicherzelle

Info

Publication number
DE2751481C2
DE2751481C2 DE2751481A DE2751481A DE2751481C2 DE 2751481 C2 DE2751481 C2 DE 2751481C2 DE 2751481 A DE2751481 A DE 2751481A DE 2751481 A DE2751481 A DE 2751481A DE 2751481 C2 DE2751481 C2 DE 2751481C2
Authority
DE
Germany
Prior art keywords
region
load impedance
memory cell
semiconductor memory
conducting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2751481A
Other languages
German (de)
English (en)
Other versions
DE2751481A1 (de
Inventor
Tsiu Chiu Dallas Tex. Chan
Vernon George Mc Kenny
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics lnc USA
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of DE2751481A1 publication Critical patent/DE2751481A1/de
Application granted granted Critical
Publication of DE2751481C2 publication Critical patent/DE2751481C2/de
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/817—Combinations of field-effect devices and resistors only
    • H10W20/01—
    • H10W20/20—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Static Random-Access Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2751481A 1976-11-22 1977-11-18 Lastimpedanz für eine statische Halbleiterspeicherzelle Expired DE2751481C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74381076A 1976-11-22 1976-11-22

Publications (2)

Publication Number Publication Date
DE2751481A1 DE2751481A1 (de) 1978-06-08
DE2751481C2 true DE2751481C2 (de) 1986-10-23

Family

ID=24990283

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2751481A Expired DE2751481C2 (de) 1976-11-22 1977-11-18 Lastimpedanz für eine statische Halbleiterspeicherzelle

Country Status (5)

Country Link
JP (6) JPS5389382A (cg-RX-API-DMAC10.html)
DE (1) DE2751481C2 (cg-RX-API-DMAC10.html)
FR (2) FR2382744A1 (cg-RX-API-DMAC10.html)
GB (2) GB1597726A (cg-RX-API-DMAC10.html)
IT (1) IT1090938B (cg-RX-API-DMAC10.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
EP0032608A1 (en) * 1980-01-22 1981-07-29 Mostek Corporation Column line powered static ram cell
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
US4446613A (en) * 1981-10-19 1984-05-08 Intel Corporation Integrated circuit resistor and method of fabrication
JPS61134054A (ja) * 1984-12-04 1986-06-21 Nec Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
JPS5710578B2 (cg-RX-API-DMAC10.html) * 1972-06-20 1982-02-26
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
JPS584459B2 (ja) 1973-06-01 1983-01-26 株式会社日立製作所 フリツプフロツプ回路装置
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
CH581904A5 (cg-RX-API-DMAC10.html) * 1974-08-29 1976-11-15 Centre Electron Horloger
DE2760086C2 (cg-RX-API-DMAC10.html) * 1976-07-26 1988-02-18 Hitachi, Ltd., Tokio/Tokyo, Jp

Also Published As

Publication number Publication date
FR2382744A1 (fr) 1978-09-29
JPS60181055U (ja) 1985-12-02
FR2382771A1 (fr) 1978-09-29
JPS6159360U (cg-RX-API-DMAC10.html) 1986-04-21
IT1090938B (it) 1985-06-26
DE2751481A1 (de) 1978-06-08
FR2382744B1 (cg-RX-API-DMAC10.html) 1984-01-06
FR2382771B1 (cg-RX-API-DMAC10.html) 1985-04-19
GB1597725A (en) 1981-09-09
JPH06188389A (ja) 1994-07-08
JPS5389382A (en) 1978-08-05
JP2692439B2 (ja) 1997-12-17
GB1597726A (en) 1981-09-09
JP2696110B2 (ja) 1998-01-14
JPS5886763A (ja) 1983-05-24
JPH0613577A (ja) 1994-01-21

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Legal Events

Date Code Title Description
OB Request for examination as to novelty
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: STOLBERG-WERNIGERODE, GRAF ZU, U., DIPL.-CHEM. DR.RER.NAT. SUCHANTKE, J., DIPL.-ING. HUBER, A., DIPL.-ING. KAMEKE, VON, A., DIPL.-CHEM. DR.RER.NAT., 2000 HAMBURG SCHULMEYER, K., DIPL.-CHEM. DR.RER.NAT., PAT.-ANWAELTE, 2087 HASLOH

8327 Change in the person/name/address of the patent owner

Owner name: SGS-THOMSON MICROELECTRONICS, INC. (N.D.GES.DES ST

8328 Change in the person/name/address of the agent

Free format text: DERZEIT KEIN VERTRETER BESTELLT