FR2382744A1 - EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT - Google Patents
EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUITInfo
- Publication number
- FR2382744A1 FR2382744A1 FR7735027A FR7735027A FR2382744A1 FR 2382744 A1 FR2382744 A1 FR 2382744A1 FR 7735027 A FR7735027 A FR 7735027A FR 7735027 A FR7735027 A FR 7735027A FR 2382744 A1 FR2382744 A1 FR 2382744A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- charging device
- extremely low
- low current
- current charging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Static Random-Access Memory (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
L'invention concerne un dispositif de charge à courant extrêmement faible pour un circuit intégré. Il comporte une jonction intrinsèque-extrinsèque formée par une matiere semi-conductrice intrinsèque pure et une diffusion d'impuretés de conductibilité extrinsèque, dans une région de la matiere semi-conductrice intrinsèque. L'invention s'applique notamment à une cellule de mémoire binaire.An extremely low current charging device for an integrated circuit is disclosed. It has an intrinsic-extrinsic junction formed by a pure intrinsic semiconductor material and a diffusion of impurities of extrinsic conductivity, in a region of the intrinsic semiconductor material. The invention applies in particular to a binary memory cell.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US74381076A | 1976-11-22 | 1976-11-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2382744A1 true FR2382744A1 (en) | 1978-09-29 |
FR2382744B1 FR2382744B1 (en) | 1984-01-06 |
Family
ID=24990283
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7735027A Granted FR2382744A1 (en) | 1976-11-22 | 1977-11-22 | EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT |
FR7818586A Granted FR2382771A1 (en) | 1976-11-22 | 1978-06-21 | SEMICONDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7818586A Granted FR2382771A1 (en) | 1976-11-22 | 1978-06-21 | SEMICONDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT |
Country Status (5)
Country | Link |
---|---|
JP (6) | JPS5389382A (en) |
DE (1) | DE2751481C2 (en) |
FR (2) | FR2382744A1 (en) |
GB (2) | GB1597725A (en) |
IT (1) | IT1090938B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4453175A (en) * | 1979-09-19 | 1984-06-05 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Static RAM layout with polysilicon resistors over FET gates |
EP0032608A1 (en) * | 1980-01-22 | 1981-07-29 | Mostek Corporation | Column line powered static ram cell |
JPS57130461A (en) * | 1981-02-06 | 1982-08-12 | Hitachi Ltd | Semiconductor memory storage |
US4446613A (en) * | 1981-10-19 | 1984-05-08 | Intel Corporation | Integrated circuit resistor and method of fabrication |
JPS61134054A (en) * | 1984-12-04 | 1986-06-21 | Nec Corp | Semiconductor device |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
GB1318856A (en) * | 1971-03-18 | 1973-05-31 | Ferranti Ltd | Semiconductor devices |
GB1391959A (en) * | 1972-07-20 | 1975-04-23 | Ferranti Ltd | Semiconductor devices |
FR2269199A1 (en) * | 1974-04-25 | 1975-11-21 | Rca Corp | |
DE2537564A1 (en) * | 1974-08-29 | 1976-03-11 | Centre Electron Horloger | INTEGRATED CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5710578B2 (en) * | 1972-06-20 | 1982-02-26 | ||
JPS584459B2 (en) | 1973-06-01 | 1983-01-26 | 株式会社日立製作所 | flip-flop circuit device |
DE2733514A1 (en) * | 1976-07-26 | 1978-02-09 | Hitachi Ltd | MISFET control electrode produced on semiconductor substrate - is formed on top of insulator layer overlapping source and drain areas |
-
1977
- 1977-11-18 DE DE2751481A patent/DE2751481C2/en not_active Expired
- 1977-11-21 IT IT51886/77A patent/IT1090938B/en active
- 1977-11-21 JP JP13978177A patent/JPS5389382A/en active Pending
- 1977-11-21 GB GB48383/77A patent/GB1597725A/en not_active Expired
- 1977-11-21 GB GB39787/78A patent/GB1597726A/en not_active Expired
- 1977-11-22 FR FR7735027A patent/FR2382744A1/en active Granted
-
1978
- 1978-06-21 FR FR7818586A patent/FR2382771A1/en active Granted
-
1982
- 1982-10-18 JP JP57182678A patent/JPS5886763A/en active Pending
-
1985
- 1985-04-22 JP JP1985060174U patent/JPS60181055U/en active Pending
- 1985-07-01 JP JP1985100415U patent/JPS6159360U/ja active Pending
-
1991
- 1991-08-09 JP JP3200909A patent/JP2696110B2/en not_active Expired - Lifetime
- 1991-08-09 JP JP3200925A patent/JP2692439B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3576478A (en) * | 1969-07-22 | 1971-04-27 | Philco Ford Corp | Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode |
GB1318856A (en) * | 1971-03-18 | 1973-05-31 | Ferranti Ltd | Semiconductor devices |
GB1391959A (en) * | 1972-07-20 | 1975-04-23 | Ferranti Ltd | Semiconductor devices |
FR2269199A1 (en) * | 1974-04-25 | 1975-11-21 | Rca Corp | |
DE2537564A1 (en) * | 1974-08-29 | 1976-03-11 | Centre Electron Horloger | INTEGRATED CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS |
Non-Patent Citations (2)
Title |
---|
EXBK/71 * |
EXBK/73 * |
Also Published As
Publication number | Publication date |
---|---|
JP2692439B2 (en) | 1997-12-17 |
IT1090938B (en) | 1985-06-26 |
JPH0613577A (en) | 1994-01-21 |
GB1597725A (en) | 1981-09-09 |
JPH06188389A (en) | 1994-07-08 |
FR2382771B1 (en) | 1985-04-19 |
JPS5886763A (en) | 1983-05-24 |
FR2382771A1 (en) | 1978-09-29 |
DE2751481A1 (en) | 1978-06-08 |
JPS6159360U (en) | 1986-04-21 |
JPS60181055U (en) | 1985-12-02 |
JP2696110B2 (en) | 1998-01-14 |
GB1597726A (en) | 1981-09-09 |
FR2382744B1 (en) | 1984-01-06 |
DE2751481C2 (en) | 1986-10-23 |
JPS5389382A (en) | 1978-08-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB959667A (en) | Improvements in or relating to methods of manufacturing unitary solid state electronic circuit complexes and to said complexes | |
JPS5539619A (en) | Thyristor | |
GB1481672A (en) | Semiconductor devices | |
ES386672A1 (en) | Negative resistance avalanche diode structures | |
JPH0777262B2 (en) | Vertical field effect transistor | |
JPS5676574A (en) | Schottky injection electrode type semiconductor device | |
FR2382744A1 (en) | EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT | |
JPS5290273A (en) | Semiconductor device | |
GB849477A (en) | Improvements in or relating to semiconductor control devices | |
GB948440A (en) | Improvements in semi-conductor devices | |
JPS54144181A (en) | Integrated inverter circuit | |
GB1289739A (en) | ||
JPS5736854A (en) | Integrated circuit device | |
JPS5377476A (en) | Semiconductor integrated circuit device | |
SU139015A1 (en) | Semiconductor two-electrode tunneling device | |
JPS5775073A (en) | Solid image pickup device | |
JPS5696852A (en) | Semiconductor device | |
JPS57121271A (en) | Field effect transistor | |
KR910013587A (en) | Semiconductor Device with Avalanche Yield Junction | |
JPS57140056A (en) | Semiconductor storage device | |
JPS572577A (en) | Semiconductor device | |
JPS5728356A (en) | Semiconductor device and manufacture thereof | |
JPS57128959A (en) | Solid state image pickup element | |
GB1529562A (en) | Semiconductor devices and circuits | |
JPS52146568A (en) | Production of silicon gate mos type semiconductor integrated circuit device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
TP | Transmission of property | ||
CA | Change of address | ||
CD | Change of name or company name | ||
TP | Transmission of property |