FR2382744A1 - EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT - Google Patents

EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT

Info

Publication number
FR2382744A1
FR2382744A1 FR7735027A FR7735027A FR2382744A1 FR 2382744 A1 FR2382744 A1 FR 2382744A1 FR 7735027 A FR7735027 A FR 7735027A FR 7735027 A FR7735027 A FR 7735027A FR 2382744 A1 FR2382744 A1 FR 2382744A1
Authority
FR
France
Prior art keywords
integrated circuit
charging device
extremely low
low current
current charging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7735027A
Other languages
French (fr)
Other versions
FR2382744B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CTU of Delaware Inc
Original Assignee
Mostek Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mostek Corp filed Critical Mostek Corp
Publication of FR2382744A1 publication Critical patent/FR2382744A1/en
Application granted granted Critical
Publication of FR2382744B1 publication Critical patent/FR2382744B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance

Abstract

L'invention concerne un dispositif de charge à courant extrêmement faible pour un circuit intégré. Il comporte une jonction intrinsèque-extrinsèque formée par une matiere semi-conductrice intrinsèque pure et une diffusion d'impuretés de conductibilité extrinsèque, dans une région de la matiere semi-conductrice intrinsèque. L'invention s'applique notamment à une cellule de mémoire binaire.An extremely low current charging device for an integrated circuit is disclosed. It has an intrinsic-extrinsic junction formed by a pure intrinsic semiconductor material and a diffusion of impurities of extrinsic conductivity, in a region of the intrinsic semiconductor material. The invention applies in particular to a binary memory cell.

FR7735027A 1976-11-22 1977-11-22 EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT Granted FR2382744A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74381076A 1976-11-22 1976-11-22

Publications (2)

Publication Number Publication Date
FR2382744A1 true FR2382744A1 (en) 1978-09-29
FR2382744B1 FR2382744B1 (en) 1984-01-06

Family

ID=24990283

Family Applications (2)

Application Number Title Priority Date Filing Date
FR7735027A Granted FR2382744A1 (en) 1976-11-22 1977-11-22 EXTREMELY LOW CURRENT CHARGING DEVICE FOR AN INTEGRATED CIRCUIT
FR7818586A Granted FR2382771A1 (en) 1976-11-22 1978-06-21 SEMICONDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT

Family Applications After (1)

Application Number Title Priority Date Filing Date
FR7818586A Granted FR2382771A1 (en) 1976-11-22 1978-06-21 SEMICONDUCTOR STRUCTURE FOR INTEGRATED CIRCUIT

Country Status (5)

Country Link
JP (6) JPS5389382A (en)
DE (1) DE2751481C2 (en)
FR (2) FR2382744A1 (en)
GB (2) GB1597725A (en)
IT (1) IT1090938B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453175A (en) * 1979-09-19 1984-06-05 Tokyo Shibaura Denki Kabushiki Kaisha MOS Static RAM layout with polysilicon resistors over FET gates
EP0032608A1 (en) * 1980-01-22 1981-07-29 Mostek Corporation Column line powered static ram cell
JPS57130461A (en) * 1981-02-06 1982-08-12 Hitachi Ltd Semiconductor memory storage
US4446613A (en) * 1981-10-19 1984-05-08 Intel Corporation Integrated circuit resistor and method of fabrication
JPS61134054A (en) * 1984-12-04 1986-06-21 Nec Corp Semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
FR2269199A1 (en) * 1974-04-25 1975-11-21 Rca Corp
DE2537564A1 (en) * 1974-08-29 1976-03-11 Centre Electron Horloger INTEGRATED CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5710578B2 (en) * 1972-06-20 1982-02-26
JPS584459B2 (en) 1973-06-01 1983-01-26 株式会社日立製作所 flip-flop circuit device
DE2733514A1 (en) * 1976-07-26 1978-02-09 Hitachi Ltd MISFET control electrode produced on semiconductor substrate - is formed on top of insulator layer overlapping source and drain areas

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3576478A (en) * 1969-07-22 1971-04-27 Philco Ford Corp Igfet comprising n-type silicon substrate, silicon oxide gate insulator and p-type polycrystalline silicon gate electrode
GB1318856A (en) * 1971-03-18 1973-05-31 Ferranti Ltd Semiconductor devices
GB1391959A (en) * 1972-07-20 1975-04-23 Ferranti Ltd Semiconductor devices
FR2269199A1 (en) * 1974-04-25 1975-11-21 Rca Corp
DE2537564A1 (en) * 1974-08-29 1976-03-11 Centre Electron Horloger INTEGRATED CIRCUIT WITH COMPLEMENTARY FIELD EFFECT TRANSISTORS

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
EXBK/71 *
EXBK/73 *

Also Published As

Publication number Publication date
JPH0613577A (en) 1994-01-21
JP2692439B2 (en) 1997-12-17
GB1597725A (en) 1981-09-09
DE2751481C2 (en) 1986-10-23
JPS5389382A (en) 1978-08-05
FR2382771B1 (en) 1985-04-19
FR2382771A1 (en) 1978-09-29
DE2751481A1 (en) 1978-06-08
IT1090938B (en) 1985-06-26
JPS60181055U (en) 1985-12-02
JPH06188389A (en) 1994-07-08
JP2696110B2 (en) 1998-01-14
JPS5886763A (en) 1983-05-24
FR2382744B1 (en) 1984-01-06
JPS6159360U (en) 1986-04-21
GB1597726A (en) 1981-09-09

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