GB1289739A - - Google Patents
Info
- Publication number
- GB1289739A GB1289739A GB1289739DA GB1289739A GB 1289739 A GB1289739 A GB 1289739A GB 1289739D A GB1289739D A GB 1289739DA GB 1289739 A GB1289739 A GB 1289739A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- regions
- path
- main current
- flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 3
- 229910001128 Sn alloy Inorganic materials 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- 229910001245 Sb alloy Inorganic materials 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052749 magnesium Inorganic materials 0.000 abstract 1
- 230000004048 modification Effects 0.000 abstract 1
- 238000012986 modification Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052697 platinum Inorganic materials 0.000 abstract 1
- 239000011347 resin Substances 0.000 abstract 1
- 229920005989 resin Polymers 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
1289739 Semi-conductor devices SONY CORP 24 Dec 1969 [28 Dec 1968] 62902/69 Heading H1K In a magnetic field detecting device comprising a semi-conductor substrate 11a, Fig. 3, of intrinsic or low conductivity material provided on one major surface 12a with two electrodebearing regions 13a, 14a, Fig. 2, between which a main current I M flows, and at least a third electrode-bearing region 15a towards or away from which the main current path I M is deflected in the presence of a magnetic field H so that an output signal measured between regions 14a and 15a is dependent upon the field H, an additional region 25 is provided on the other major surface 12b to restrict the depth of the main current flow-path I M and thereby to increase the sensitivity of the device. The region 25 may, in a Si, Ge or intermetallic semiconductor, contain deep-level impurities such as Au, Cu, Ni, Ag, Zn, Mg, Fe or Pt introduced by diffusion or ion-implantation, and the region 25 may be of polycrystalline material to facilitate such introduction. In a modification the flow-path restricting region (29b), Fig. 6 (not shown), is of P+ or N+ type material formed by local diffusion into only a central area of the surface (12b), and a corresponding region (29a) may be formed similarly in the surface (12a) to cause further flow-path restriction. In this case the two regions (12a, 12b) may carry electrodes for the provision of a suitable bias voltage. The regions 13a, 15a, Fig. 2, are diffused or alloyed P type regions formed with In/Sn alloy, and the region 14a and a further optional output region 21 connected to the region 15a are diffused or alloyed N type regions formed with Sb/Sn alloy. The entire device may be encased in a moulded resin.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP85869 | 1968-12-28 | ||
| JP85868 | 1968-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1289739A true GB1289739A (en) | 1972-09-20 |
Family
ID=26333959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1289739D Expired GB1289739A (en) | 1968-12-28 | 1969-12-24 |
Country Status (4)
| Country | Link |
|---|---|
| DE (1) | DE1964589A1 (en) |
| FR (1) | FR2033217A6 (en) |
| GB (1) | GB1289739A (en) |
| NL (1) | NL6919469A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2611051A1 (en) * | 1987-02-12 | 1988-08-19 | Suditec France Sud Innovation | Device for measuring the intensity of an alternating electric current using a Hall probe |
| EP0402271A2 (en) * | 1989-06-08 | 1990-12-12 | Mitsubishi Petrochemical Co., Ltd. | Magnetic field sensitive semiconductor device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216147A1 (en) * | 1982-04-30 | 1983-11-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Magnetic field sensor |
| DE3443377A1 (en) * | 1984-11-28 | 1986-05-28 | Eberhard 7981 Grünkraut Tittel | HIGH ROOF RACK ELEMENT FOR A MOTOR VEHICLE |
-
1969
- 1969-12-23 DE DE19691964589 patent/DE1964589A1/en active Pending
- 1969-12-24 GB GB1289739D patent/GB1289739A/en not_active Expired
- 1969-12-29 FR FR6945296A patent/FR2033217A6/fr not_active Expired
- 1969-12-29 NL NL6919469A patent/NL6919469A/xx unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2611051A1 (en) * | 1987-02-12 | 1988-08-19 | Suditec France Sud Innovation | Device for measuring the intensity of an alternating electric current using a Hall probe |
| EP0402271A2 (en) * | 1989-06-08 | 1990-12-12 | Mitsubishi Petrochemical Co., Ltd. | Magnetic field sensitive semiconductor device |
| EP0402271A3 (en) * | 1989-06-08 | 1991-12-11 | Mitsubishi Petrochemical Co., Ltd. | Magnetic field sensitive semiconductor device |
| US5099298A (en) * | 1989-06-08 | 1992-03-24 | Mitsubishi Petrochemical Company Ltd. | Magnetically sensitive semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2033217A6 (en) | 1970-12-04 |
| NL6919469A (en) | 1970-06-30 |
| DE1964589A1 (en) | 1970-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PCNP | Patent ceased through non-payment of renewal fee |