GB956985A - Improvements in or relating to electric circuits including singlecrystal semiconductor resistors - Google Patents
Improvements in or relating to electric circuits including singlecrystal semiconductor resistorsInfo
- Publication number
- GB956985A GB956985A GB30690/61A GB3069061A GB956985A GB 956985 A GB956985 A GB 956985A GB 30690/61 A GB30690/61 A GB 30690/61A GB 3069061 A GB3069061 A GB 3069061A GB 956985 A GB956985 A GB 956985A
- Authority
- GB
- United Kingdom
- Prior art keywords
- temperature
- resistor
- resistance
- semi
- operating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910000967 As alloy Inorganic materials 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 238000005275 alloying Methods 0.000 abstract 1
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 230000001419 dependent effect Effects 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
- H01C7/001—Mass resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
Abstract
956,985. Semi-conductor devices; ohmic resistors. TELEGRAPH CONDENSER CO. Ltd. Aug. 25, 1961 [Sept. 19, 1960], No. 30690/61. Headings K1K and K1S. An ohmic resistor consists of a monocrystalline semi-conductor body containing impurity atoms which are fully ionised in the operating temperature range and yield a carrier concentration greatly exceeding the intrinsic carrier concentration within said temperature range, the impurity concentration being selected so that in the operating range the rate of change with temperature of the lattice scattering contribution to the mobility is balanced by the rate of change in the opposite sense of the carrier scattering contribution. Since the electronic charge is constant and the dimensional changes of the body with temperature are small the resistance of the resistor is substantially independent of temperature within the operating range. Outside the operating temperature range the resistance is temperature dependent. A typical resistor for use at room temperature consists of germanium doped with 10<SP>18</SP> atoms/cc. of phosphorus, arsenic or antimony. Ohmic contacts to the crystal, which is shaped to give the required value of resistance, are made by alloying using lead-arsenic alloy. The contacts to an indium doped germanium resistor are similarly made but using indium as contact material. The use of silicon as semi-conductor material is also mentioned.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US56953A US3181097A (en) | 1960-09-19 | 1960-09-19 | Single crystal semiconductor resistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB956985A true GB956985A (en) | 1964-04-29 |
Family
ID=22007597
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB30690/61A Expired GB956985A (en) | 1960-09-19 | 1961-08-25 | Improvements in or relating to electric circuits including singlecrystal semiconductor resistors |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US3181097A (en) |
| GB (1) | GB956985A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140615A (en) * | 1983-03-22 | 1984-11-28 | Standard Telephones Cables Ltd | Thermistor composite |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3270309A (en) * | 1964-01-29 | 1966-08-30 | Grace W R & Co | Temperature sensitive device |
| US3406366A (en) * | 1966-01-13 | 1968-10-15 | Ibm | Electrical temperature sensor device |
| US3440883A (en) * | 1966-12-01 | 1969-04-29 | Monsanto Co | Electronic semiconductor thermometer |
| US3491325A (en) * | 1967-02-15 | 1970-01-20 | Ibm | Temperature compensation for semiconductor devices |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2631356A (en) * | 1953-03-17 | Method of making p-n junctions | ||
| US2657345A (en) * | 1949-10-06 | 1953-10-27 | Otmar M Stuetzer | Transconductor employing line type field controlled semiconductor |
| US2953759A (en) * | 1953-07-01 | 1960-09-20 | Sprague Electric Co | Semi-conductor resistors |
| BE555459A (en) * | 1956-03-02 | |||
| US2953486A (en) * | 1959-06-01 | 1960-09-20 | Bell Telephone Labor Inc | Junction formation by thermal oxidation of semiconductive material |
-
1960
- 1960-09-19 US US56953A patent/US3181097A/en not_active Expired - Lifetime
-
1961
- 1961-08-25 GB GB30690/61A patent/GB956985A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2140615A (en) * | 1983-03-22 | 1984-11-28 | Standard Telephones Cables Ltd | Thermistor composite |
| US4702619A (en) * | 1983-03-22 | 1987-10-27 | Standard Telephones And Cables Public Limited Company | Temperature sensors |
Also Published As
| Publication number | Publication date |
|---|---|
| US3181097A (en) | 1965-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| ES8405556A1 (en) | Magnetic field sensor and the use thereof. | |
| GB1021756A (en) | Thermoelectric device | |
| GB1514180A (en) | Integrated circuits | |
| GB883906A (en) | Improvements in semi-conductive arrangements | |
| GB956985A (en) | Improvements in or relating to electric circuits including singlecrystal semiconductor resistors | |
| KR890016686A (en) | Semiconductor devices with regions doped to levels above the solubility limit | |
| GB1209543A (en) | Improvements in or relating to semiconductor devices | |
| GB971261A (en) | Improvements in semiconductor devices | |
| GB1143907A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
| JPS52154383A (en) | Semiconductor integrated circuit device | |
| GB1250020A (en) | Semiconductor device | |
| GB1313915A (en) | Resistors for integrated circuits | |
| GB1306970A (en) | Semiconductor circuit | |
| GB921037A (en) | Improvements in or relating to the preparation of single crystals of silicon | |
| GB967588A (en) | Improvements relating to semiconductor devices | |
| GB944870A (en) | Improvements in semiconductive devices | |
| JPS52120780A (en) | Semiconductor device | |
| GB1073131A (en) | Improvements relating to low-temperature semi-conductor devices | |
| GB1289739A (en) | ||
| GB1534338A (en) | Integrated circuits | |
| GB977680A (en) | A drift transistor | |
| JPS539484A (en) | Integrated circuit device | |
| GB998939A (en) | Improvements in and relating to semiconductor devices | |
| GB1064253A (en) | Extremely low temperature variable negative-resistance device | |
| GB996152A (en) | Semiconductor devices |