FR2364541A1 - Cellule de memoire a acces direct avec une region de condensateur implantee, et son procede d'obtention - Google Patents
Cellule de memoire a acces direct avec une region de condensateur implantee, et son procede d'obtentionInfo
- Publication number
- FR2364541A1 FR2364541A1 FR7727612A FR7727612A FR2364541A1 FR 2364541 A1 FR2364541 A1 FR 2364541A1 FR 7727612 A FR7727612 A FR 7727612A FR 7727612 A FR7727612 A FR 7727612A FR 2364541 A1 FR2364541 A1 FR 2364541A1
- Authority
- FR
- France
- Prior art keywords
- memory cell
- access memory
- direct access
- region implanted
- condenser region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Abstract
L'invention concerne une cellule de mémoire à accès direct avec une région de condensateur implantée. Une région implantée au-dessous du diélectrique du condensateur permet de réduire les tensions de polarisation. Deux niveaux de silicium polycristallin peuvent être utilisés, l'un du côté de polarisation du condensateur et l'autre pour la grille du transistor MOS ainsi que pour connecter cette grille au conducteur de sélection. L'invention s'applique à la réalisation de mémoires MOS en circuits intégrés, de grande capacité.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/722,841 US4240092A (en) | 1976-09-13 | 1976-09-13 | Random access memory cell with different capacitor and transistor oxide thickness |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2364541A1 true FR2364541A1 (fr) | 1978-04-07 |
FR2364541B3 FR2364541B3 (fr) | 1980-06-27 |
Family
ID=24903624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7727612A Granted FR2364541A1 (fr) | 1976-09-13 | 1977-09-13 | Cellule de memoire a acces direct avec une region de condensateur implantee, et son procede d'obtention |
Country Status (4)
Country | Link |
---|---|
US (1) | US4240092A (fr) |
JP (3) | JPS6050065B2 (fr) |
DE (1) | DE2741152A1 (fr) |
FR (1) | FR2364541A1 (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2437674A1 (fr) * | 1978-09-29 | 1980-04-25 | Siemens Ag | Memoire a semi-conducteurs comportant des varactors a appauvrissement servant de condensateurs de memoire |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4827448A (en) * | 1976-09-13 | 1989-05-02 | Texas Instruments Incorporated | Random access memory cell with implanted capacitor region |
JPS5376687A (en) * | 1976-12-17 | 1978-07-07 | Nec Corp | Semiconductor memory device |
DE2858815C2 (de) * | 1977-01-26 | 1996-01-18 | Sgs Thomson Microelectronics | Verfahren zur Ausbildung eines Feldeffekttransistors in einer Halbleitervorrichtung |
IT1089299B (it) | 1977-01-26 | 1985-06-18 | Mostek Corp | Procedimento per fabbricare un dispositivo semiconduttore |
US4219834A (en) * | 1977-11-11 | 1980-08-26 | International Business Machines Corporation | One-device monolithic random access memory and method of fabricating same |
JPS5565458A (en) * | 1978-11-10 | 1980-05-16 | Nec Corp | Memory cell |
JPS55153368A (en) * | 1979-05-18 | 1980-11-29 | Fujitsu Ltd | Semiconductor memory device |
DE2926417A1 (de) * | 1979-06-29 | 1981-01-22 | Siemens Ag | Dynamische halbleiterspeicherzelle und verfahren zu ihrer herstellung |
JPS5662319A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Impurity dispersion method |
US4380863A (en) * | 1979-12-10 | 1983-04-26 | Texas Instruments Incorporated | Method of making double level polysilicon series transistor devices |
JPS5927102B2 (ja) * | 1979-12-24 | 1984-07-03 | 富士通株式会社 | 半導体記憶装置 |
JPS6023504B2 (ja) * | 1980-01-24 | 1985-06-07 | 富士通株式会社 | 半導体メモリ装置 |
DE3173413D1 (en) * | 1980-01-25 | 1986-02-20 | Toshiba Kk | Semiconductor memory device |
US4388121A (en) * | 1980-03-21 | 1983-06-14 | Texas Instruments Incorporated | Reduced field implant for dynamic memory cell array |
JPS5948477B2 (ja) * | 1980-03-31 | 1984-11-27 | 富士通株式会社 | 半導体記憶装置 |
US4345364A (en) * | 1980-04-07 | 1982-08-24 | Texas Instruments Incorporated | Method of making a dynamic memory array |
US4608751A (en) * | 1980-04-07 | 1986-09-02 | Texas Instruments Incorporated | Method of making dynamic memory array |
US4883543A (en) * | 1980-06-05 | 1989-11-28 | Texas Instruments Incroporated | Shielding for implant in manufacture of dynamic memory |
JPS5718356A (en) * | 1980-07-07 | 1982-01-30 | Mitsubishi Electric Corp | Semiconductor memory storage |
DE3032632A1 (de) * | 1980-08-29 | 1982-04-08 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung integrierter dynamischer ram-eintransistor-speicherzellen |
US4457066A (en) * | 1980-10-15 | 1984-07-03 | Texas Instruments Incorporated | Method of making single-level polysilicon dynamic memory array |
JPS5771580A (en) * | 1980-10-22 | 1982-05-04 | Fujitsu Ltd | Semiconductor memory device |
NL186886C (nl) * | 1980-11-28 | 1992-03-16 | Philips Nv | Halfgeleiderinrichting. |
US4403394A (en) * | 1980-12-17 | 1983-09-13 | International Business Machines Corporation | Formation of bit lines for ram device |
JPS57113264A (en) * | 1980-12-29 | 1982-07-14 | Fujitsu Ltd | Manufacture of mis type capacitor |
FR2499766A1 (en) * | 1981-02-11 | 1982-08-13 | Texas Instruments France | NMOS integrated circuit capacitors using poly-silicon gates - uses auxiliary ion implant for capacitors and auto alignment diffusion for telephone analogue=to=digital converter |
JPS57133589A (en) * | 1981-02-12 | 1982-08-18 | Fujitsu Ltd | Semiconductor circuit |
US4459609A (en) * | 1981-09-14 | 1984-07-10 | International Business Machines Corporation | Charge-stabilized memory |
US4472873A (en) * | 1981-10-22 | 1984-09-25 | Fairchild Camera And Instrument Corporation | Method for forming submicron bipolar transistors without epitaxial growth and the resulting structure |
US4543597A (en) * | 1982-06-30 | 1985-09-24 | Tokyo Shibaura Denki Kabushiki Kaisha | Dynamic semiconductor memory and manufacturing method thereof |
US4419812A (en) * | 1982-08-23 | 1983-12-13 | Ncr Corporation | Method of fabricating an integrated circuit voltage multiplier containing a parallel plate capacitor |
JPH0612619B2 (ja) * | 1982-09-22 | 1994-02-16 | 株式会社日立製作所 | 半導体メモリ装置 |
JPS5994454A (ja) * | 1982-11-19 | 1984-05-31 | Nec Kyushu Ltd | 半導体装置とその製造方法 |
JPS59121691A (ja) * | 1982-12-01 | 1984-07-13 | Fujitsu Ltd | ダイナミツク型半導体記憶装置 |
US4542481A (en) * | 1983-01-31 | 1985-09-17 | International Business Machines Corporation | One-device random access memory cell having enhanced capacitance |
US4466177A (en) * | 1983-06-30 | 1984-08-21 | International Business Machines Corporation | Storage capacitor optimization for one device FET dynamic RAM cell |
JPS6012752A (ja) * | 1983-07-01 | 1985-01-23 | Nippon Telegr & Teleph Corp <Ntt> | 半導体記憶装置およびその製造方法 |
JPH0782753B2 (ja) * | 1984-08-31 | 1995-09-06 | 三菱電機株式会社 | ダイナミックメモリ装置 |
CN1012310B (zh) * | 1985-05-01 | 1991-04-03 | 得克萨斯仪器公司 | 超大规模集成电路的局部互连方法及其结构 |
JPS62251260A (ja) * | 1986-04-24 | 1987-11-02 | Nissan Motor Co Ltd | 車両用ウインドシ−ルドガラス洗浄装置 |
KR890003217B1 (ko) * | 1987-02-24 | 1989-08-26 | 삼성전자 주식회사 | 디램 쎌의 제조방법 |
US4916524A (en) * | 1987-03-16 | 1990-04-10 | Texas Instruments Incorporated | Dram cell and method |
US5051995A (en) * | 1988-03-14 | 1991-09-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having a test mode setting circuit |
WO1990005377A1 (fr) * | 1988-10-31 | 1990-05-17 | Micron Technology, Inc. | Reduction localisee de l'invasion par l'oxyde de champ |
US5013692A (en) * | 1988-12-08 | 1991-05-07 | Sharp Kabushiki Kaisha | Process for preparing a silicon nitride insulating film for semiconductor memory device |
JPH0346188A (ja) * | 1989-07-13 | 1991-02-27 | Mitsubishi Electric Corp | 半導体記憶回路 |
US5332682A (en) * | 1990-08-31 | 1994-07-26 | Micron Semiconductor, Inc. | Local encroachment reduction |
JPH04218959A (ja) * | 1990-10-18 | 1992-08-10 | Mitsubishi Electric Corp | 半導体装置およびその制御方法 |
JPH05136363A (ja) * | 1991-11-15 | 1993-06-01 | Sharp Corp | 半導体記憶装置 |
US20050036363A1 (en) * | 1996-05-24 | 2005-02-17 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
US5748547A (en) * | 1996-05-24 | 1998-05-05 | Shau; Jeng-Jye | High performance semiconductor memory devices having multiple dimension bit lines |
US7064376B2 (en) * | 1996-05-24 | 2006-06-20 | Jeng-Jye Shau | High performance embedded semiconductor memory devices with multiple dimension first-level bit-lines |
US6133077A (en) * | 1998-01-13 | 2000-10-17 | Lsi Logic Corporation | Formation of high-voltage and low-voltage devices on a semiconductor substrate |
US6093585A (en) * | 1998-05-08 | 2000-07-25 | Lsi Logic Corporation | High voltage tolerant thin film transistor |
US6235590B1 (en) | 1998-12-18 | 2001-05-22 | Lsi Logic Corporation | Fabrication of differential gate oxide thicknesses on a single integrated circuit chip |
JP2004233526A (ja) * | 2003-01-29 | 2004-08-19 | Mitsubishi Electric Corp | 液晶表示装置 |
US6900097B2 (en) * | 2003-05-12 | 2005-05-31 | United Microelectronics Corp. | Method for forming single-level electrically erasable and programmable read only memory operated in environment with high/low-voltage |
US20050269614A1 (en) * | 2004-06-08 | 2005-12-08 | Chung-Cheng Tsou | Non-junction-leakage 1T-RAM cell |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
GB1357515A (en) * | 1972-03-10 | 1974-06-26 | Matsushita Electronics Corp | Method for manufacturing an mos integrated circuit |
JPS50125684A (fr) * | 1974-03-20 | 1975-10-02 | ||
JPS525224A (en) * | 1975-07-02 | 1977-01-14 | Hitachi Ltd | 1trs-type memory cell |
JPS5853512B2 (ja) * | 1976-02-13 | 1983-11-29 | 株式会社東芝 | 半導体記憶装置の製造方法 |
JPS6053470B2 (ja) * | 1976-06-09 | 1985-11-26 | 株式会社日立製作所 | 半導体メモリの製造方法 |
DE2723254A1 (de) * | 1976-07-02 | 1978-01-12 | Ibm | Halbleiterstruktur mit vom halbleitermaterial isolierten polysiliciumelektroden und verfahren zu ihrer herstellung |
-
1976
- 1976-09-13 US US05/722,841 patent/US4240092A/en not_active Expired - Lifetime
-
1977
- 1977-09-12 JP JP52109753A patent/JPS6050065B2/ja not_active Expired
- 1977-09-13 FR FR7727612A patent/FR2364541A1/fr active Granted
- 1977-09-13 DE DE19772741152 patent/DE2741152A1/de not_active Withdrawn
-
1985
- 1985-06-26 JP JP60140091A patent/JPS6150361A/ja active Pending
-
1986
- 1986-11-21 JP JP61278513A patent/JPS62162354A/ja active Granted
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2437674A1 (fr) * | 1978-09-29 | 1980-04-25 | Siemens Ag | Memoire a semi-conducteurs comportant des varactors a appauvrissement servant de condensateurs de memoire |
Also Published As
Publication number | Publication date |
---|---|
JPS5359384A (en) | 1978-05-29 |
JPS6150361A (ja) | 1986-03-12 |
JPS62162354A (ja) | 1987-07-18 |
FR2364541B3 (fr) | 1980-06-27 |
US4240092A (en) | 1980-12-16 |
JPS6050065B2 (ja) | 1985-11-06 |
JPH0351314B2 (fr) | 1991-08-06 |
DE2741152A1 (de) | 1978-03-16 |
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