FR2371042A1 - Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite - Google Patents
Memoire dynamique a acces direct, avec des cellules de memoire de grande capaciteInfo
- Publication number
- FR2371042A1 FR2371042A1 FR7733903A FR7733903A FR2371042A1 FR 2371042 A1 FR2371042 A1 FR 2371042A1 FR 7733903 A FR7733903 A FR 7733903A FR 7733903 A FR7733903 A FR 7733903A FR 2371042 A1 FR2371042 A1 FR 2371042A1
- Authority
- FR
- France
- Prior art keywords
- direct access
- large capacity
- memory cells
- point
- dynamic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015654 memory Effects 0.000 title abstract 4
- 239000003990 capacitor Substances 0.000 abstract 3
- 239000004020 conductor Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Abstract
L'invention concerne une mémoire dynamique à accès direct comportant une matrice de cellules de grande capacité. Chaque cellule comporte un transistor dont la source est connectée à un conducteur binaire, une grille connectée à une ligne de mots et un drain connecté à un point N. Le point N est relié en parallèle à un condensateur à diélectrique et à un condensateur à appauvrissement. Ces deux condensateurs sont réalisés de manière que leur capacité soit la même. L'invention s'applique à des mémoires de grande capacité intégrées sur des pastilles semi-conductrices, pour des calculateurs numériques.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US05/740,528 US4164751A (en) | 1976-11-10 | 1976-11-10 | High capacity dynamic ram cell |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2371042A1 true FR2371042A1 (fr) | 1978-06-09 |
FR2371042B1 FR2371042B1 (fr) | 1984-09-21 |
Family
ID=24976890
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7733903A Granted FR2371042A1 (fr) | 1976-11-10 | 1977-11-10 | Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite |
Country Status (6)
Country | Link |
---|---|
US (1) | US4164751A (fr) |
JP (1) | JPS5368043A (fr) |
DE (1) | DE2750395A1 (fr) |
FR (1) | FR2371042A1 (fr) |
GB (1) | GB1591428A (fr) |
NL (1) | NL7712341A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2435106A1 (fr) * | 1978-08-30 | 1980-03-28 | Siemens Ag | Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication |
Families Citing this family (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4112575A (en) * | 1976-12-20 | 1978-09-12 | Texas Instruments Incorporated | Fabrication methods for the high capacity ram cell |
US4392210A (en) * | 1978-08-28 | 1983-07-05 | Mostek Corporation | One transistor-one capacitor memory cell |
US4492973A (en) * | 1978-12-25 | 1985-01-08 | Tokyo Shibaura Denki Kabushiki Kaisha | MOS Dynamic memory cells and method of fabricating the same |
EP0014388B1 (fr) * | 1979-01-25 | 1983-12-21 | Nec Corporation | Dispositif semiconducteur à mémoire |
JPS55107255A (en) * | 1979-02-12 | 1980-08-16 | Mitsubishi Electric Corp | Substrate potential generating circuit device |
US4903097A (en) * | 1979-03-26 | 1990-02-20 | Hughes Aircraft Company | CCD read only memory |
US4592130A (en) * | 1979-03-26 | 1986-06-03 | Hughes Aircraft Company | Method of fabricating a CCD read only memory utilizing dual-level junction formation |
DE2926416A1 (de) * | 1979-06-29 | 1981-01-22 | Siemens Ag | Dynamische halbleiter-speicherzelle und verfahren zu ihrer herstellung |
US4313253A (en) * | 1979-07-30 | 1982-02-02 | Burroughs Corporation | Method of fabricating a charge transfer channel covered by a stepped insulating layer |
US4482908A (en) * | 1979-07-30 | 1984-11-13 | Burroughs Corporation | High capacity memory cell having a charge transfer channel covered by a stepped insulating layer |
JPS5623771A (en) * | 1979-08-01 | 1981-03-06 | Hitachi Ltd | Semiconductor memory |
JPS5826829B2 (ja) * | 1979-08-30 | 1983-06-06 | 富士通株式会社 | ダイナミックメモリセルの製造方法 |
US4597805A (en) * | 1979-10-11 | 1986-07-01 | Texas Instruments Incorporated | Making guard ring for reducing pattern sensitivity in MOS/LSI dynamic RAM |
JPS5696854A (en) * | 1979-12-29 | 1981-08-05 | Fujitsu Ltd | Semiconductor memory device |
US4433257A (en) * | 1980-03-03 | 1984-02-21 | Tokyo Shibaura Denki Kabushiki Kaisha | Voltage supply for operating a plurality of changing transistors in a manner which reduces minority carrier disruption of adjacent memory cells |
US5109258A (en) * | 1980-05-07 | 1992-04-28 | Texas Instruments Incorporated | Memory cell made by selective oxidation of polysilicon |
DE3027175A1 (de) * | 1980-07-17 | 1982-02-11 | Siemens AG, 1000 Berlin und 8000 München | Anordnung zur verringerung der strahlungsempfindlichkeit von in integrierter mos-schaltkreistechnik ausgefuehrten speicherzellen |
US4457066A (en) * | 1980-10-15 | 1984-07-03 | Texas Instruments Incorporated | Method of making single-level polysilicon dynamic memory array |
US4511911A (en) * | 1981-07-22 | 1985-04-16 | International Business Machines Corporation | Dense dynamic memory cell structure and process |
US4352236A (en) * | 1981-07-24 | 1982-10-05 | Intel Corporation | Double field oxidation process |
US4535349A (en) * | 1981-12-31 | 1985-08-13 | International Business Machines Corporation | Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing |
US4887135A (en) * | 1982-02-09 | 1989-12-12 | American Telephone And Telegraph Company, At&T Bell Laboratories | Dual level polysilicon single transistor-capacitor memory array |
JPS58137245A (ja) * | 1982-02-10 | 1983-08-15 | Hitachi Ltd | 大規模半導体メモリ |
US4641165A (en) * | 1982-04-28 | 1987-02-03 | Tokyo Shibaura Denki Kabushiki Kaisha | Dynamic memory device with an RC circuit for inhibiting the effects of alpha particle radiation |
US4542481A (en) * | 1983-01-31 | 1985-09-17 | International Business Machines Corporation | One-device random access memory cell having enhanced capacitance |
USRE33261E (en) * | 1984-07-03 | 1990-07-10 | Texas Instruments, Incorporated | Trench capacitor for high density dynamic RAM |
US5170234A (en) * | 1984-07-03 | 1992-12-08 | Texas Instruments Incorporated | High density dynamic RAM with trench capacitor |
US5208657A (en) * | 1984-08-31 | 1993-05-04 | Texas Instruments Incorporated | DRAM Cell with trench capacitor and vertical channel in substrate |
US4824793A (en) * | 1984-09-27 | 1989-04-25 | Texas Instruments Incorporated | Method of making DRAM cell with trench capacitor |
US5102817A (en) * | 1985-03-21 | 1992-04-07 | Texas Instruments Incorporated | Vertical DRAM cell and method |
JPS62141756A (ja) * | 1985-12-16 | 1987-06-25 | Mitsubishi Electric Corp | 半導体記憶装置 |
KR890001957B1 (ko) * | 1986-08-22 | 1989-06-03 | 삼성전자 주식회사 | 디램셀의 제조방법 |
US4829017A (en) * | 1986-09-25 | 1989-05-09 | Texas Instruments Incorporated | Method for lubricating a high capacity dram cell |
US4873664A (en) * | 1987-02-12 | 1989-10-10 | Ramtron Corporation | Self restoring ferroelectric memory |
CA1340340C (fr) | 1987-06-02 | 1999-01-26 | Joseph T. Evans, Jr. | Circuit de memoire permanente utilisant un element de stockage de type condensateur ferroelectrique |
US4914627A (en) * | 1987-07-02 | 1990-04-03 | Ramtron Corporation | One transistor memory cell with programmable capacitance divider |
US4910708A (en) * | 1987-07-02 | 1990-03-20 | Ramtron Corporation | Dram with programmable capacitance divider |
US4918654A (en) * | 1987-07-02 | 1990-04-17 | Ramtron Corporation | SRAM with programmable capacitance divider |
US4853893A (en) * | 1987-07-02 | 1989-08-01 | Ramtron Corporation | Data storage device and method of using a ferroelectric capacitance divider |
US5109259A (en) * | 1987-09-22 | 1992-04-28 | Texas Instruments Incorporated | Multiple DRAM cells in a trench |
US5046043A (en) * | 1987-10-08 | 1991-09-03 | National Semiconductor Corporation | Ferroelectric capacitor and memory cell including barrier and isolation layers |
US6124625A (en) * | 1988-05-31 | 2000-09-26 | Micron Technology, Inc. | Chip decoupling capacitor |
US5687109A (en) | 1988-05-31 | 1997-11-11 | Micron Technology, Inc. | Integrated circuit module having on-chip surge capacitors |
US5266821A (en) * | 1988-05-31 | 1993-11-30 | Micron Technology, Inc. | Chip decoupling capacitor |
US5307309A (en) * | 1988-05-31 | 1994-04-26 | Micron Technology, Inc. | Memory module having on-chip surge capacitors |
US5032892A (en) * | 1988-05-31 | 1991-07-16 | Micron Technology, Inc. | Depletion mode chip decoupling capacitor |
US5105245A (en) * | 1988-06-28 | 1992-04-14 | Texas Instruments Incorporated | Trench capacitor DRAM cell with diffused bit lines adjacent to a trench |
US4958206A (en) * | 1988-06-28 | 1990-09-18 | Texas Instruments Incorporated | Diffused bit line trench capacitor dram cell |
US5225363A (en) * | 1988-06-28 | 1993-07-06 | Texas Instruments Incorporated | Trench capacitor DRAM cell and method of manufacture |
JP2503621B2 (ja) * | 1989-01-23 | 1996-06-05 | 日本電気株式会社 | 半導体装置の製造方法 |
US5465249A (en) * | 1991-11-26 | 1995-11-07 | Cree Research, Inc. | Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate |
US5270964A (en) * | 1992-05-19 | 1993-12-14 | Sun Microsystems, Inc. | Single in-line memory module |
US5655113A (en) * | 1994-07-05 | 1997-08-05 | Monolithic System Technology, Inc. | Resynchronization circuit for a memory system and method of operating same |
US6114756A (en) | 1998-04-01 | 2000-09-05 | Micron Technology, Inc. | Interdigitated capacitor design for integrated circuit leadframes |
US6414391B1 (en) | 1998-06-30 | 2002-07-02 | Micron Technology, Inc. | Module assembly for stacked BGA packages with a common bus bar in the assembly |
JP3678212B2 (ja) * | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
US6755700B2 (en) * | 2002-11-12 | 2004-06-29 | Modevation Enterprises Inc. | Reset speed control for watercraft |
US7274347B2 (en) * | 2003-06-27 | 2007-09-25 | Texas Instruments Incorporated | Prevention of charge accumulation in micromirror devices through bias inversion |
US7375873B2 (en) * | 2005-02-28 | 2008-05-20 | Texas Instruments Incorporated | Method of repairing micromirrors in spatial light modulators |
US20060193028A1 (en) * | 2005-02-28 | 2006-08-31 | Satyadev Patel | Method of repairing micromirrors in spatial light modulators |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3852800A (en) * | 1971-08-02 | 1974-12-03 | Texas Instruments Inc | One transistor dynamic memory cell |
US3740732A (en) * | 1971-08-12 | 1973-06-19 | Texas Instruments Inc | Dynamic data storage cell |
US3996655A (en) * | 1973-12-14 | 1976-12-14 | Texas Instruments Incorporated | Processes of forming insulated gate field effect transistors with channel lengths of one micron in integrated circuits with component isolated and product |
JPS51114079A (en) * | 1975-03-31 | 1976-10-07 | Fujitsu Ltd | Construction of semiconductor memory device |
US4012757A (en) * | 1975-05-05 | 1977-03-15 | Intel Corporation | Contactless random-access memory cell and cell pair |
US4003036A (en) * | 1975-10-23 | 1977-01-11 | American Micro-Systems, Inc. | Single IGFET memory cell with buried storage element |
US4060738A (en) * | 1976-03-03 | 1977-11-29 | Texas Instruments Incorporated | Charge coupled device random access memory |
-
1976
- 1976-11-10 US US05/740,528 patent/US4164751A/en not_active Expired - Lifetime
-
1977
- 1977-10-27 GB GB44772/77A patent/GB1591428A/en not_active Expired
- 1977-11-09 NL NL7712341A patent/NL7712341A/xx not_active Application Discontinuation
- 1977-11-09 JP JP13453177A patent/JPS5368043A/ja active Pending
- 1977-11-10 FR FR7733903A patent/FR2371042A1/fr active Granted
- 1977-11-10 DE DE19772750395 patent/DE2750395A1/de not_active Ceased
Non-Patent Citations (1)
Title |
---|
EXBK/76 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2435106A1 (fr) * | 1978-08-30 | 1980-03-28 | Siemens Ag | Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication |
Also Published As
Publication number | Publication date |
---|---|
GB1591428A (en) | 1981-06-24 |
NL7712341A (nl) | 1978-05-12 |
US4164751A (en) | 1979-08-14 |
FR2371042B1 (fr) | 1984-09-21 |
DE2750395A1 (de) | 1978-05-11 |
JPS5368043A (en) | 1978-06-17 |
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