FR2435106A1 - Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication - Google Patents

Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication

Info

Publication number
FR2435106A1
FR2435106A1 FR7921664A FR7921664A FR2435106A1 FR 2435106 A1 FR2435106 A1 FR 2435106A1 FR 7921664 A FR7921664 A FR 7921664A FR 7921664 A FR7921664 A FR 7921664A FR 2435106 A1 FR2435106 A1 FR 2435106A1
Authority
FR
France
Prior art keywords
mos
manufacture
integrated semiconductor
semiconductor memory
memory according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7921664A
Other languages
English (en)
Other versions
FR2435106B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2435106A1 publication Critical patent/FR2435106A1/fr
Application granted granted Critical
Publication of FR2435106B1 publication Critical patent/FR2435106B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Local Oxidation Of Silicon (AREA)

Abstract

Mémoire à semi-conducteurs intégrée suivant la technique MOS et procédé pour sa fabrication. Dans cette mémoire, dans laquelle deux transistors MOS de deux cellules de mémoire sont commandés en commun par un conducteur de mots, et deux transistors MOS sont accouplés à un conducteur de bits et les grilles des transistors et une électrode de condensateurs de mémoire de cellules sont constituées par des couches respectives de polysilicium situées dans deux plans respectifs, les conducteurs de bits 37, 38 s'étendent dans un troisième plan sous la forme de voies en polysilicium, accouplées aux transistors MOS par des zones de raccordement, dans un substrat semi-conducteur contenant les cellules. Application notamment aux mémoires MOS.
FR7921664A 1978-08-30 1979-08-29 Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication Granted FR2435106A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782837877 DE2837877A1 (de) 1978-08-30 1978-08-30 Mos-integrierter halbleiterspeicher sowie verfahren zu seiner herstellung

Publications (2)

Publication Number Publication Date
FR2435106A1 true FR2435106A1 (fr) 1980-03-28
FR2435106B1 FR2435106B1 (fr) 1984-05-04

Family

ID=6048279

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7921664A Granted FR2435106A1 (fr) 1978-08-30 1979-08-29 Memoire a semi-conducteurs integree selon la technique mos et procede pour sa fabrication

Country Status (5)

Country Link
US (1) US4334236A (fr)
JP (1) JPS5534500A (fr)
DE (1) DE2837877A1 (fr)
FR (1) FR2435106A1 (fr)
GB (1) GB2029103B (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4240195A (en) * 1978-09-15 1980-12-23 Bell Telephone Laboratories, Incorporated Dynamic random access memory
EP0154685B1 (fr) * 1980-01-25 1990-04-18 Kabushiki Kaisha Toshiba Dispositif de mémoire semi-conductrice
US4536941A (en) * 1980-03-21 1985-08-27 Kuo Chang Kiang Method of making high density dynamic memory cell
US4883543A (en) * 1980-06-05 1989-11-28 Texas Instruments Incroporated Shielding for implant in manufacture of dynamic memory
JPS5718356A (en) * 1980-07-07 1982-01-30 Mitsubishi Electric Corp Semiconductor memory storage
JPS5793572A (en) * 1980-12-03 1982-06-10 Nec Corp Manufacture of semiconductor device
DE3046218C2 (de) * 1980-12-08 1982-09-02 Siemens AG, 1000 Berlin und 8000 München Verfahren zur Erzeugung einer Eintransistor-Speicherzelle in Doppelsilizium-Technik
US4403394A (en) * 1980-12-17 1983-09-13 International Business Machines Corporation Formation of bit lines for ram device
JPS5831568A (ja) * 1981-08-18 1983-02-24 Nec Corp 半導体メモリ
US4453176A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation LSI Chip carrier with buried repairable capacitor with low inductance leads
US4887135A (en) * 1982-02-09 1989-12-12 American Telephone And Telegraph Company, At&T Bell Laboratories Dual level polysilicon single transistor-capacitor memory array
US4574465A (en) * 1982-04-13 1986-03-11 Texas Instruments Incorporated Differing field oxide thicknesses in dynamic memory device
US4652898A (en) * 1984-07-19 1987-03-24 International Business Machines Corporation High speed merged charge memory
US4774203A (en) * 1985-10-25 1988-09-27 Hitachi, Ltd. Method for making static random-access memory device
JPH0831565B2 (ja) * 1986-08-05 1996-03-27 三菱電機株式会社 ランダムアクセスメモリ
US5087951A (en) * 1988-05-02 1992-02-11 Micron Technology Semiconductor memory device transistor and cell structure
US10707296B2 (en) * 2018-10-10 2020-07-07 Texas Instruments Incorporated LOCOS with sidewall spacer for different capacitance density capacitors

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2310609A1 (fr) * 1975-05-05 1976-12-03 Intel Corp Cellule et paire de cellules de memoire a acces direct sans contact
FR2371042A1 (fr) * 1976-11-10 1978-06-09 Texas Instruments Inc Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite
DE2756855A1 (de) * 1976-12-20 1978-07-06 Texas Instruments Inc Verfahren zum herstellen einer matrix aus speicherzellen mit hoher speicherkapazitaet

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2431079C3 (de) * 1974-06-28 1979-12-13 Ibm Deutschland Gmbh, 7000 Stuttgart Dynamischer Halbleiterspeicher mit Zwei-Transistor-Speicherelementen
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
JPS5390888A (en) 1977-01-21 1978-08-10 Nec Corp Integrated circuit device
US4240195A (en) * 1978-09-15 1980-12-23 Bell Telephone Laboratories, Incorporated Dynamic random access memory

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2310609A1 (fr) * 1975-05-05 1976-12-03 Intel Corp Cellule et paire de cellules de memoire a acces direct sans contact
FR2371042A1 (fr) * 1976-11-10 1978-06-09 Texas Instruments Inc Memoire dynamique a acces direct, avec des cellules de memoire de grande capacite
DE2756855A1 (de) * 1976-12-20 1978-07-06 Texas Instruments Inc Verfahren zum herstellen einer matrix aus speicherzellen mit hoher speicherkapazitaet

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
EXBK/79 *

Also Published As

Publication number Publication date
US4334236A (en) 1982-06-08
GB2029103B (en) 1983-03-09
DE2837877C2 (fr) 1987-04-23
DE2837877A1 (de) 1980-03-06
JPS5534500A (en) 1980-03-11
FR2435106B1 (fr) 1984-05-04
GB2029103A (en) 1980-03-12

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Legal Events

Date Code Title Description
ST Notification of lapse