ES465088A1 - Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio - Google Patents

Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio

Info

Publication number
ES465088A1
ES465088A1 ES465088A ES465088A ES465088A1 ES 465088 A1 ES465088 A1 ES 465088A1 ES 465088 A ES465088 A ES 465088A ES 465088 A ES465088 A ES 465088A ES 465088 A1 ES465088 A1 ES 465088A1
Authority
ES
Spain
Prior art keywords
random access
access memory
field effect
effect transistor
junction field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES465088A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from NL7613999A external-priority patent/NL7613999A/xx
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES465088A1 publication Critical patent/ES465088A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Bipolar Transistors (AREA)
  • Static Random-Access Memory (AREA)

Abstract

Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio, que comprende una pluralidad de celdas de memoria, cada una de las cuales incluye un transistor de efecto de campo de unión que tiene como electrodos principales electrodos de entrada y salida conectados a extremos opuestos de un canal y dos electrodos de control contiguos al canal y que forman una unión rectificadora con el mismo para controlar la conductividad del canal; medios de selección que comprenden líneas de selección, que incluyen una línea de bitio y una línea de palabra para cada celda de memoria, estando conectado un primer electrodo principal de un transistor de celda de memoria a una línea de bitio respectiva común a una columna de transistores, y estando conectado un primer electrodo de control a una línea de palabra común a una fila de transistores, estando a un potencial flotante un segundo electrodo de control de tal transistor de celda de memoria, cuyo potencial representa información bajo el control de las tensiones utilizadas para selección de dichos transistores de celda de memoria; y medios de control para suministrar tensiones de selección a las líneas de palabra y líneas de bitio para seleccionar dichos transistores de celda de memoria de tal modo que puede borrarse la información si está presente en tal transistor, o puede inscribirse nueva información, o puede ser leída información, estando conectado dicho segundo electrodo principal de dicho transistor a un electrodo común a los transistores de celda de memoria.
ES465088A 1976-12-17 1977-12-15 Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio Expired ES465088A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7613999A NL7613999A (en) 1976-12-17 1976-12-17 RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn.
NL7700880A NL7700880A (nl) 1976-12-17 1977-01-28 Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren.

Publications (1)

Publication Number Publication Date
ES465088A1 true ES465088A1 (es) 1979-01-01

Family

ID=26645268

Family Applications (1)

Application Number Title Priority Date Filing Date
ES465088A Expired ES465088A1 (es) 1976-12-17 1977-12-15 Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio

Country Status (12)

Country Link
US (1) US4126899A (es)
JP (1) JPS5814748B2 (es)
AU (1) AU509810B2 (es)
BR (1) BR7708370A (es)
DE (1) DE2755953C2 (es)
ES (1) ES465088A1 (es)
FR (1) FR2374726A1 (es)
GB (1) GB1593435A (es)
IT (1) IT1088593B (es)
NL (1) NL7700880A (es)
PL (1) PL115339B1 (es)
SE (1) SE7714156L (es)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2726014A1 (de) * 1977-06-08 1978-12-21 Siemens Ag Dynamisches speicherelement
US5298787A (en) * 1979-08-10 1994-03-29 Massachusetts Institute Of Technology Semiconductor embedded layer technology including permeable base transistor
US4328511A (en) * 1979-12-10 1982-05-04 Texas Instruments Incorporated Taper isolated ram cell without gate oxide
US4706107A (en) * 1981-06-04 1987-11-10 Nippon Electric Co., Ltd. IC memory cells with reduced alpha particle influence
FR2566162B1 (fr) * 1984-06-13 1986-08-29 Thomson Csf Dispositif memoire d'image analogique utilisant le transfert de charge
AT380897B (de) * 1984-12-10 1986-07-25 Koller Anton Mischung zur pflege und reinigung von kontaktlinsen
JPH02504335A (ja) * 1987-05-04 1990-12-06 ユニバーシティ・オブ・ウォータールー Ｖｌｓｉチップ
TW289168B (es) * 1991-12-16 1996-10-21 Philips Nv
JP2004235475A (ja) * 2003-01-30 2004-08-19 Nec Electronics Corp 半導体装置
US8014199B2 (en) * 2006-05-22 2011-09-06 Spansion Llc Memory system with switch element
US8547756B2 (en) 2010-10-04 2013-10-01 Zeno Semiconductor, Inc. Semiconductor memory device having an electrically floating body transistor
US20080273409A1 (en) * 2007-05-01 2008-11-06 Thummalapally Damodar R Junction field effect dynamic random access memory cell and applications therefor
US7729149B2 (en) * 2007-05-01 2010-06-01 Suvolta, Inc. Content addressable memory cell including a junction field effect transistor
US7692220B2 (en) * 2007-05-01 2010-04-06 Suvolta, Inc. Semiconductor device storage cell structure, method of operation, and method of manufacture
US8035139B2 (en) * 2007-09-02 2011-10-11 Suvolta, Inc. Dynamic random access memory having junction field effect transistor cell access device
US8130547B2 (en) 2007-11-29 2012-03-06 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor
CN107293322B (zh) 2010-02-07 2021-09-21 芝诺半导体有限公司 含导通浮体晶体管、并具有永久性和非永久性功能的半导体存储元件及操作方法
US10340276B2 (en) 2010-03-02 2019-07-02 Zeno Semiconductor, Inc. Method of maintaining the state of semiconductor memory having electrically floating body transistor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7208026A (es) * 1972-06-13 1973-12-17
US3836992A (en) * 1973-03-16 1974-09-17 Ibm Electrically erasable floating gate fet memory cell
US3893152A (en) * 1973-07-25 1975-07-01 Hung Chang Lin Metal nitride oxide semiconductor integrated circuit structure

Also Published As

Publication number Publication date
SE7714156L (sv) 1978-06-18
JPS5814748B2 (ja) 1983-03-22
DE2755953A1 (de) 1978-06-22
FR2374726B1 (es) 1982-05-21
NL7700880A (nl) 1978-08-01
GB1593435A (en) 1981-07-15
AU509810B2 (en) 1980-05-22
BR7708370A (pt) 1979-07-17
PL115339B1 (en) 1981-03-31
PL202981A1 (pl) 1978-09-11
AU3148777A (en) 1979-06-21
DE2755953C2 (de) 1984-07-05
IT1088593B (it) 1985-06-10
US4126899A (en) 1978-11-21
JPS5386590A (en) 1978-07-31
FR2374726A1 (fr) 1978-07-13

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