NL7613999A - RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn. - Google Patents

RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn.

Info

Publication number
NL7613999A
NL7613999A NL7613999A NL7613999A NL7613999A NL 7613999 A NL7613999 A NL 7613999A NL 7613999 A NL7613999 A NL 7613999A NL 7613999 A NL7613999 A NL 7613999A NL 7613999 A NL7613999 A NL 7613999A
Authority
NL
Netherlands
Prior art keywords
semiconductor device
conductor pattern
per cell
redn
channel
Prior art date
Application number
NL7613999A
Other languages
Dutch (nl)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NL7613999A priority Critical patent/NL7613999A/en
Priority to NL7700880A priority patent/NL7700880A/en
Priority to US05/814,648 priority patent/US4126899A/en
Priority to AU31487/77A priority patent/AU509810B2/en
Priority to GB51999/77A priority patent/GB1593435A/en
Priority to IT30711/77A priority patent/IT1088593B/en
Priority to SE7714156A priority patent/SE7714156L/en
Priority to DE2755953A priority patent/DE2755953C2/en
Priority to ES465088A priority patent/ES465088A1/en
Priority to FR7737830A priority patent/FR2374726A1/en
Priority to PL1977202981A priority patent/PL115339B1/en
Priority to BR7708370A priority patent/BR7708370A/en
Priority to JP52150760A priority patent/JPS5814748B2/en
Publication of NL7613999A publication Critical patent/NL7613999A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
    • H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Memories (AREA)

Abstract

R.a.m. semiconductor device has memory cells with only one FET per cell in a common body of the type in which a channel is connected to a main electrode (a source and a drain electrode) at each end, whilst the conductivity of the channel can be controlled by two gate electrodes connected to the channel and forming a rectifying junction with it. It also has selectors, in the form of a conductor pattern the first main electrode of a memory cell transistor bring connected with a common bit conductor of a colour of transistors and the first gate electrode with a common word conductor of a row of transistors, whilst the second gate electrode is at a floating potential, which represents information with regulation of the potential occurring on selection of a certain memory cell transistor.
NL7613999A 1976-12-17 1976-12-17 RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn. NL7613999A (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
NL7613999A NL7613999A (en) 1976-12-17 1976-12-17 RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn.
NL7700880A NL7700880A (en) 1976-12-17 1977-01-28 ACCESSIBLE MEMORY WITH JUNCTION FIELD DEFECT TRANSISTORS.
US05/814,648 US4126899A (en) 1976-12-17 1977-07-11 Junction field effect transistor random access memory
AU31487/77A AU509810B2 (en) 1976-12-17 1977-12-13 Junction field effect transistor random access memory
GB51999/77A GB1593435A (en) 1976-12-17 1977-12-14 Semiconductor devices
IT30711/77A IT1088593B (en) 1976-12-17 1977-12-14 TRANSISTOR TYPE AND RANGE EFFECT, JUNCTION
SE7714156A SE7714156L (en) 1976-12-17 1977-12-14 RAM MEMORY WITH DIFFERENT FIELD POWER TRANSISTORS
DE2755953A DE2755953C2 (en) 1976-12-17 1977-12-15 Semiconductor arrangement in the form of a memory with any access
ES465088A ES465088A1 (en) 1976-12-17 1977-12-15 Junction field effect transistor random access memory
FR7737830A FR2374726A1 (en) 1976-12-17 1977-12-15 RANDOM ACCESS MEMORY EQUIPPED WITH JUNCTION FIELD-EFFECT TRANSISTOR
PL1977202981A PL115339B1 (en) 1976-12-17 1977-12-15 Random access memory on a junction field-effect transistor(jfet)
BR7708370A BR7708370A (en) 1976-12-17 1977-12-15 PERFECTING A SEMICONDUCTOR DEVICE FOR RANDOM ACCESS MEMORY
JP52150760A JPS5814748B2 (en) 1976-12-17 1977-12-16 Semiconductor device for random access memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7613999A NL7613999A (en) 1976-12-17 1976-12-17 RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn.

Publications (1)

Publication Number Publication Date
NL7613999A true NL7613999A (en) 1978-06-20

Family

ID=19827391

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7613999A NL7613999A (en) 1976-12-17 1976-12-17 RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn.

Country Status (1)

Country Link
NL (1) NL7613999A (en)

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Legal Events

Date Code Title Description
BV The patent application has lapsed