JPS5750384A - Semiconductor storage circuit device - Google Patents

Semiconductor storage circuit device

Info

Publication number
JPS5750384A
JPS5750384A JP55125473A JP12547380A JPS5750384A JP S5750384 A JPS5750384 A JP S5750384A JP 55125473 A JP55125473 A JP 55125473A JP 12547380 A JP12547380 A JP 12547380A JP S5750384 A JPS5750384 A JP S5750384A
Authority
JP
Japan
Prior art keywords
layer
circuit device
storage circuit
semiconductor storage
row line
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55125473A
Other languages
Japanese (ja)
Inventor
Toru Tsujiide
Noboru Hirakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP55125473A priority Critical patent/JPS5750384A/en
Publication of JPS5750384A publication Critical patent/JPS5750384A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To realize a high-speed operation of a semiconductor storage circuit device, by reducing the delay of a conduction wire with a contact secured between a polysilicone layer forming a row line, etc. and a low resistance molybdenum metallic layer which is parallel to the polysilicone layer. CONSTITUTION:Memory cell parts 203 and 204, etc. contain memory cells arrayed by a polysilicone layer 204 that form a continuous gate transistor with a low level of threshold voltage and high stability of properties. A row line is driven by these memory cell parts. An ohmic contact is secured between the layer 204 and a low resistance molybdenum metallic layer 208 which is prallel to the layer 204 via aperture parts 205, 206, 207... which are provided to an insulated layer at the space part of the parts 203, 204.... In such constitution, the delay of propagation due to the resistance of a conduction wire such as a row line is reduced. Thus the speed of operation can be increased for a semiconductor storage circuit device.
JP55125473A 1980-09-10 1980-09-10 Semiconductor storage circuit device Pending JPS5750384A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55125473A JPS5750384A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55125473A JPS5750384A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit device

Publications (1)

Publication Number Publication Date
JPS5750384A true JPS5750384A (en) 1982-03-24

Family

ID=14910953

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55125473A Pending JPS5750384A (en) 1980-09-10 1980-09-10 Semiconductor storage circuit device

Country Status (1)

Country Link
JP (1) JPS5750384A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
WO1985004732A1 (en) * 1984-04-11 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5871652A (en) * 1981-10-26 1983-04-28 Hitachi Ltd Semiconductor memory device
WO1985004731A1 (en) * 1984-04-09 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
WO1985004732A1 (en) * 1984-04-11 1985-10-24 Hosiden Electronics Co., Ltd. Liquid crystal display element and a method of producing the same
US4687298A (en) * 1984-04-11 1987-08-18 Hosiden Electronics, Ltd. Forming an opaque metal layer in a liquid crystal display

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