IT1088593B - Memoria ad accesso casuale,del tipo a transistori ed effeto di campo,a giunzione - Google Patents
Memoria ad accesso casuale,del tipo a transistori ed effeto di campo,a giunzioneInfo
- Publication number
- IT1088593B IT1088593B IT30711/77A IT3071177A IT1088593B IT 1088593 B IT1088593 B IT 1088593B IT 30711/77 A IT30711/77 A IT 30711/77A IT 3071177 A IT3071177 A IT 3071177A IT 1088593 B IT1088593 B IT 1088593B
- Authority
- IT
- Italy
- Prior art keywords
- junction
- transistor type
- range effect
- range
- effect
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7613999A NL7613999A (en) | 1976-12-17 | 1976-12-17 | RAM semiconductor device with conductor pattern selectors - has only two address conductors per cell allowing size redn. |
NL7700880A NL7700880A (nl) | 1976-12-17 | 1977-01-28 | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1088593B true IT1088593B (it) | 1985-06-10 |
Family
ID=26645268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT30711/77A IT1088593B (it) | 1976-12-17 | 1977-12-14 | Memoria ad accesso casuale,del tipo a transistori ed effeto di campo,a giunzione |
Country Status (12)
Country | Link |
---|---|
US (1) | US4126899A (it) |
JP (1) | JPS5814748B2 (it) |
AU (1) | AU509810B2 (it) |
BR (1) | BR7708370A (it) |
DE (1) | DE2755953C2 (it) |
ES (1) | ES465088A1 (it) |
FR (1) | FR2374726A1 (it) |
GB (1) | GB1593435A (it) |
IT (1) | IT1088593B (it) |
NL (1) | NL7700880A (it) |
PL (1) | PL115339B1 (it) |
SE (1) | SE7714156L (it) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4328511A (en) * | 1979-12-10 | 1982-05-04 | Texas Instruments Incorporated | Taper isolated ram cell without gate oxide |
US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
FR2566162B1 (fr) * | 1984-06-13 | 1986-08-29 | Thomson Csf | Dispositif memoire d'image analogique utilisant le transfert de charge |
AT380897B (de) * | 1984-12-10 | 1986-07-25 | Koller Anton | Mischung zur pflege und reinigung von kontaktlinsen |
EP0358668A1 (en) * | 1987-05-04 | 1990-03-21 | University Of Waterloo | Vlsi chip |
TW289168B (it) * | 1991-12-16 | 1996-10-21 | Philips Nv | |
JP2004235475A (ja) * | 2003-01-30 | 2004-08-19 | Nec Electronics Corp | 半導体装置 |
US8014199B2 (en) * | 2006-05-22 | 2011-09-06 | Spansion Llc | Memory system with switch element |
US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
US20080273409A1 (en) * | 2007-05-01 | 2008-11-06 | Thummalapally Damodar R | Junction field effect dynamic random access memory cell and applications therefor |
US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
US8130547B2 (en) | 2007-11-29 | 2012-03-06 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
SG10201700467UA (en) | 2010-02-07 | 2017-02-27 | Zeno Semiconductor Inc | Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method |
US10340276B2 (en) | 2010-03-02 | 2019-07-02 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7208026A (it) * | 1972-06-13 | 1973-12-17 | ||
US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
US3893152A (en) * | 1973-07-25 | 1975-07-01 | Hung Chang Lin | Metal nitride oxide semiconductor integrated circuit structure |
-
1977
- 1977-01-28 NL NL7700880A patent/NL7700880A/xx not_active Application Discontinuation
- 1977-07-11 US US05/814,648 patent/US4126899A/en not_active Expired - Lifetime
- 1977-12-13 AU AU31487/77A patent/AU509810B2/en not_active Expired
- 1977-12-14 IT IT30711/77A patent/IT1088593B/it active
- 1977-12-14 SE SE7714156A patent/SE7714156L/xx not_active Application Discontinuation
- 1977-12-14 GB GB51999/77A patent/GB1593435A/en not_active Expired
- 1977-12-15 FR FR7737830A patent/FR2374726A1/fr active Granted
- 1977-12-15 ES ES465088A patent/ES465088A1/es not_active Expired
- 1977-12-15 DE DE2755953A patent/DE2755953C2/de not_active Expired
- 1977-12-15 BR BR7708370A patent/BR7708370A/pt unknown
- 1977-12-15 PL PL1977202981A patent/PL115339B1/pl unknown
- 1977-12-16 JP JP52150760A patent/JPS5814748B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR2374726A1 (fr) | 1978-07-13 |
AU3148777A (en) | 1979-06-21 |
DE2755953A1 (de) | 1978-06-22 |
AU509810B2 (en) | 1980-05-22 |
SE7714156L (sv) | 1978-06-18 |
US4126899A (en) | 1978-11-21 |
PL115339B1 (en) | 1981-03-31 |
NL7700880A (nl) | 1978-08-01 |
DE2755953C2 (de) | 1984-07-05 |
BR7708370A (pt) | 1979-07-17 |
JPS5814748B2 (ja) | 1983-03-22 |
ES465088A1 (es) | 1979-01-01 |
GB1593435A (en) | 1981-07-15 |
PL202981A1 (pl) | 1978-09-11 |
FR2374726B1 (it) | 1982-05-21 |
JPS5386590A (en) | 1978-07-31 |
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