NL7700880A - Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. - Google Patents
Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren.Info
- Publication number
- NL7700880A NL7700880A NL7700880A NL7700880A NL7700880A NL 7700880 A NL7700880 A NL 7700880A NL 7700880 A NL7700880 A NL 7700880A NL 7700880 A NL7700880 A NL 7700880A NL 7700880 A NL7700880 A NL 7700880A
- Authority
- NL
- Netherlands
- Prior art keywords
- junction field
- accessible memory
- field defect
- transistors
- defect transistors
- Prior art date
Links
- 230000007547 defect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/39—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using thyristors or the avalanche or negative resistance type, e.g. PNPN, SCR, SCS, UJT
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Priority Applications (13)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7700880A NL7700880A (nl) | 1976-12-17 | 1977-01-28 | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
US05/814,648 US4126899A (en) | 1976-12-17 | 1977-07-11 | Junction field effect transistor random access memory |
AU31487/77A AU509810B2 (en) | 1976-12-17 | 1977-12-13 | Junction field effect transistor random access memory |
IT30711/77A IT1088593B (it) | 1976-12-17 | 1977-12-14 | Memoria ad accesso casuale,del tipo a transistori ed effeto di campo,a giunzione |
SE7714156A SE7714156L (sv) | 1976-12-17 | 1977-12-14 | Ram-minne med diffunderade felteffekttransistorer |
GB51999/77A GB1593435A (en) | 1976-12-17 | 1977-12-14 | Semiconductor devices |
PL1977202981A PL115339B1 (en) | 1976-12-17 | 1977-12-15 | Random access memory on a junction field-effect transistor(jfet) |
ES465088A ES465088A1 (es) | 1976-12-17 | 1977-12-15 | Un dispositivo semiconductor perfeccionado para una memoria de acceso aleatorio |
BR7708370A BR7708370A (pt) | 1976-12-17 | 1977-12-15 | Aperfeicoamento em disitivo semicondutor para memoria de acesso aleatorio |
FR7737830A FR2374726A1 (fr) | 1976-12-17 | 1977-12-15 | Memoire a acces aleatoire muni de transistor a effet de champ a jonction |
DE2755953A DE2755953C2 (de) | 1976-12-17 | 1977-12-15 | Halbleiteranordnung in Form eines Speichers mit beliebigem Zugriff |
JP52150760A JPS5814748B2 (ja) | 1976-12-17 | 1977-12-16 | ランダムアクセスメモリ用半導体装置 |
CA293,775A CA1114503A (en) | 1977-01-28 | 1977-12-22 | Junction field effect transistor random access memory |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7613999A NL7613999A (nl) | 1976-12-17 | 1976-12-17 | Naar willekeur toegankelijk geheugen met grenslaagveldeffekt transistoren. |
NL7700880A NL7700880A (nl) | 1976-12-17 | 1977-01-28 | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7700880A true NL7700880A (nl) | 1978-08-01 |
Family
ID=26645268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7700880A NL7700880A (nl) | 1976-12-17 | 1977-01-28 | Naar willekeur toegankelijk geheugen met junctieveldeffekttransistoren. |
Country Status (12)
Country | Link |
---|---|
US (1) | US4126899A (nl) |
JP (1) | JPS5814748B2 (nl) |
AU (1) | AU509810B2 (nl) |
BR (1) | BR7708370A (nl) |
DE (1) | DE2755953C2 (nl) |
ES (1) | ES465088A1 (nl) |
FR (1) | FR2374726A1 (nl) |
GB (1) | GB1593435A (nl) |
IT (1) | IT1088593B (nl) |
NL (1) | NL7700880A (nl) |
PL (1) | PL115339B1 (nl) |
SE (1) | SE7714156L (nl) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2726014A1 (de) * | 1977-06-08 | 1978-12-21 | Siemens Ag | Dynamisches speicherelement |
US5298787A (en) * | 1979-08-10 | 1994-03-29 | Massachusetts Institute Of Technology | Semiconductor embedded layer technology including permeable base transistor |
US4328511A (en) * | 1979-12-10 | 1982-05-04 | Texas Instruments Incorporated | Taper isolated ram cell without gate oxide |
US4706107A (en) * | 1981-06-04 | 1987-11-10 | Nippon Electric Co., Ltd. | IC memory cells with reduced alpha particle influence |
FR2566162B1 (fr) * | 1984-06-13 | 1986-08-29 | Thomson Csf | Dispositif memoire d'image analogique utilisant le transfert de charge |
AT380897B (de) * | 1984-12-10 | 1986-07-25 | Koller Anton | Mischung zur pflege und reinigung von kontaktlinsen |
JPH02504335A (ja) * | 1987-05-04 | 1990-12-06 | ユニバーシティ・オブ・ウォータールー | Vlsiチップ |
TW289168B (nl) * | 1991-12-16 | 1996-10-21 | Philips Nv | |
JP2004235475A (ja) * | 2003-01-30 | 2004-08-19 | Nec Electronics Corp | 半導体装置 |
US8014199B2 (en) * | 2006-05-22 | 2011-09-06 | Spansion Llc | Memory system with switch element |
US8547756B2 (en) | 2010-10-04 | 2013-10-01 | Zeno Semiconductor, Inc. | Semiconductor memory device having an electrically floating body transistor |
US7729149B2 (en) * | 2007-05-01 | 2010-06-01 | Suvolta, Inc. | Content addressable memory cell including a junction field effect transistor |
US20080273409A1 (en) * | 2007-05-01 | 2008-11-06 | Thummalapally Damodar R | Junction field effect dynamic random access memory cell and applications therefor |
US7692220B2 (en) * | 2007-05-01 | 2010-04-06 | Suvolta, Inc. | Semiconductor device storage cell structure, method of operation, and method of manufacture |
US8035139B2 (en) * | 2007-09-02 | 2011-10-11 | Suvolta, Inc. | Dynamic random access memory having junction field effect transistor cell access device |
US8130547B2 (en) | 2007-11-29 | 2012-03-06 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
WO2011097592A1 (en) | 2010-02-07 | 2011-08-11 | Zeno Semiconductor , Inc. | Semiconductor memory device having electrically floating body transistor, and having both volatile and non-volatile functionality and method |
US10340276B2 (en) | 2010-03-02 | 2019-07-02 | Zeno Semiconductor, Inc. | Method of maintaining the state of semiconductor memory having electrically floating body transistor |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7208026A (nl) * | 1972-06-13 | 1973-12-17 | ||
US3836992A (en) * | 1973-03-16 | 1974-09-17 | Ibm | Electrically erasable floating gate fet memory cell |
US3893152A (en) * | 1973-07-25 | 1975-07-01 | Hung Chang Lin | Metal nitride oxide semiconductor integrated circuit structure |
-
1977
- 1977-01-28 NL NL7700880A patent/NL7700880A/nl not_active Application Discontinuation
- 1977-07-11 US US05/814,648 patent/US4126899A/en not_active Expired - Lifetime
- 1977-12-13 AU AU31487/77A patent/AU509810B2/en not_active Expired
- 1977-12-14 GB GB51999/77A patent/GB1593435A/en not_active Expired
- 1977-12-14 SE SE7714156A patent/SE7714156L/xx not_active Application Discontinuation
- 1977-12-14 IT IT30711/77A patent/IT1088593B/it active
- 1977-12-15 ES ES465088A patent/ES465088A1/es not_active Expired
- 1977-12-15 DE DE2755953A patent/DE2755953C2/de not_active Expired
- 1977-12-15 PL PL1977202981A patent/PL115339B1/pl unknown
- 1977-12-15 FR FR7737830A patent/FR2374726A1/fr active Granted
- 1977-12-15 BR BR7708370A patent/BR7708370A/pt unknown
- 1977-12-16 JP JP52150760A patent/JPS5814748B2/ja not_active Expired
Also Published As
Publication number | Publication date |
---|---|
AU509810B2 (en) | 1980-05-22 |
DE2755953C2 (de) | 1984-07-05 |
ES465088A1 (es) | 1979-01-01 |
US4126899A (en) | 1978-11-21 |
SE7714156L (sv) | 1978-06-18 |
FR2374726B1 (nl) | 1982-05-21 |
JPS5386590A (en) | 1978-07-31 |
DE2755953A1 (de) | 1978-06-22 |
PL115339B1 (en) | 1981-03-31 |
IT1088593B (it) | 1985-06-10 |
GB1593435A (en) | 1981-07-15 |
BR7708370A (pt) | 1979-07-17 |
FR2374726A1 (fr) | 1978-07-13 |
AU3148777A (en) | 1979-06-21 |
PL202981A1 (pl) | 1978-09-11 |
JPS5814748B2 (ja) | 1983-03-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BV | The patent application has lapsed |