ES8602535A1 - Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste. - Google Patents

Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste.

Info

Publication number
ES8602535A1
ES8602535A1 ES528415A ES528415A ES8602535A1 ES 8602535 A1 ES8602535 A1 ES 8602535A1 ES 528415 A ES528415 A ES 528415A ES 528415 A ES528415 A ES 528415A ES 8602535 A1 ES8602535 A1 ES 8602535A1
Authority
ES
Spain
Prior art keywords
naf
fluosilicic acid
sif4
obtaining silicon
compartment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES528415A
Other languages
English (en)
Other versions
ES528415A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SRI International Inc
Original Assignee
SRI International Inc
Stanford Research Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SRI International Inc, Stanford Research Institute filed Critical SRI International Inc
Publication of ES8602535A1 publication Critical patent/ES8602535A1/es
Publication of ES528415A0 publication Critical patent/ES528415A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/91—Downward pulling
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)

Abstract

PROCEDIMIENTO Y SU CORRESPONDIENTE SISTEMA PARA PRODUCIR SILICIO DE CALIDAD SOLAR, ALTA PUREZA Y BAJO COSTE. COMPRENDE: A) INTRODUCIR SODIO EN UN PRIMER COMPARTIMENTO SITUADO EN EL INTERIOR DE UNA SECCION DEL REACTOR, QUE TIENE PASOS A SU TRAVES Y ESTOS PASOS TIENEN UN TAMAÑO QUE PERMITE EL TRANSPORTE DE VAPOR A SU TRAVES; B) INTRODUCIR FLUORSILICATO DE SODIO (12) EN UN SEGUNDO COMPARTIMENTO SITUADO EN EL INTERIOR DE DICHA SECCION DEL REACTOR Y EN POSICION ADYACENTE A LOS PASOS DEL PRIMER COMPARTIMENTO; Y C) CALENTAR EL FLUORSILICATO DE SODIO (12) PARA DESCOMPONERLO TERMICAMENTE Y FORMAR FLUORURO DE SODIO (30) Y VAPOR DE TETRAFLUORURO DE SILICIO (10).
ES528415A 1982-12-27 1983-12-26 Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste. Granted ES528415A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/453,734 US4590043A (en) 1982-12-27 1982-12-27 Apparatus for obtaining silicon from fluosilicic acid

Publications (2)

Publication Number Publication Date
ES8602535A1 true ES8602535A1 (es) 1985-12-01
ES528415A0 ES528415A0 (es) 1985-12-01

Family

ID=23801845

Family Applications (1)

Application Number Title Priority Date Filing Date
ES528415A Granted ES528415A0 (es) 1982-12-27 1983-12-26 Un procedimiento y su correspondiente sistema para producir silicio de calidad solar, alta pureza y bajo coste.

Country Status (13)

Country Link
US (2) US4590043A (es)
EP (2) EP0424981A1 (es)
JP (1) JPS60500172A (es)
CA (2) CA1222124A (es)
CH (1) CH670624A5 (es)
DE (1) DE3390374T1 (es)
ES (1) ES528415A0 (es)
GB (2) GB2142916B (es)
GR (1) GR79108B (es)
IT (1) IT1172392B (es)
NL (1) NL8320390A (es)
PT (1) PT77854B (es)
WO (1) WO1984002539A1 (es)

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US9050070B2 (en) * 2008-10-31 2015-06-09 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
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US8725420B2 (en) * 2008-10-31 2014-05-13 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
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US8793075B2 (en) * 2008-10-31 2014-07-29 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
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US9060934B2 (en) * 2008-10-31 2015-06-23 The Invention Science Fund I, Llc Compositions and methods for surface abrasion with frozen particles
US8551505B2 (en) * 2008-10-31 2013-10-08 The Invention Science Fund I, Llc Compositions and methods for therapeutic delivery with frozen particles
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Also Published As

Publication number Publication date
NL8320390A (nl) 1984-11-01
JPS60500172A (ja) 1985-02-07
PT77854B (en) 1986-03-25
IT1172392B (it) 1987-06-18
PT77854A (en) 1984-01-01
GR79108B (es) 1984-10-02
US4753783A (en) 1988-06-28
CH670624A5 (es) 1989-06-30
EP0424981A1 (en) 1991-05-02
GB2178420B (en) 1987-12-23
GB2178420A (en) 1987-02-11
US4590043A (en) 1986-05-20
WO1984002539A1 (en) 1984-07-05
EP0131586A1 (en) 1985-01-23
EP0131586A4 (en) 1988-03-22
GB8417387D0 (en) 1984-08-08
CA1222124A (en) 1987-05-26
GB8619455D0 (en) 1986-09-17
GB2142916B (en) 1987-03-18
DE3390374T1 (de) 1985-01-24
ES528415A0 (es) 1985-12-01
GB2142916A (en) 1985-01-30
EP0131586B1 (en) 1991-07-31
CA1241895A (en) 1988-09-13
IT8349586A0 (it) 1983-12-27

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