ES459971A1 - Un metodo para la produccion de silicio cristalino. - Google Patents

Un metodo para la produccion de silicio cristalino.

Info

Publication number
ES459971A1
ES459971A1 ES459971A ES459971A ES459971A1 ES 459971 A1 ES459971 A1 ES 459971A1 ES 459971 A ES459971 A ES 459971A ES 459971 A ES459971 A ES 459971A ES 459971 A1 ES459971 A1 ES 459971A1
Authority
ES
Spain
Prior art keywords
silicon
mother liquor
iron concentration
crystalline
mold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES459971A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Interlake Inc
Original Assignee
Interlake Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Interlake Inc filed Critical Interlake Inc
Publication of ES459971A1 publication Critical patent/ES459971A1/es
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/037—Purification
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/4998—Combined manufacture including applying or shaping of fluent material
    • Y10T29/49988—Metal casting
    • Y10T29/49989—Followed by cutting or removing material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Un método para la producción de silicio cristalino que tiene una concentración de hierro menor que la concentración de hierro de las aguas madres, dicho método se caracteriza porque se introducen las aguas madres de silicio fundido contaminando con hierro a una temperatura superior que el punto de fusión de silicio puro en un molde manteniendo el molde a una temperatura suficiente como para hacer que los cristales de silicio crezcan allí,
ES459971A 1976-06-21 1977-06-21 Un metodo para la produccion de silicio cristalino. Expired ES459971A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/697,865 US4094731A (en) 1976-06-21 1976-06-21 Method of purifying silicon

Publications (1)

Publication Number Publication Date
ES459971A1 true ES459971A1 (es) 1978-05-01

Family

ID=24802907

Family Applications (1)

Application Number Title Priority Date Filing Date
ES459971A Expired ES459971A1 (es) 1976-06-21 1977-06-21 Un metodo para la produccion de silicio cristalino.

Country Status (15)

Country Link
US (1) US4094731A (es)
JP (1) JPS6028761B2 (es)
BR (1) BR7703980A (es)
CA (1) CA1076461A (es)
CH (1) CH621316A5 (es)
DE (1) DE2728158A1 (es)
ES (1) ES459971A1 (es)
FR (1) FR2355776A1 (es)
GB (1) GB1528897A (es)
IT (1) IT1079704B (es)
NO (1) NO151082C (es)
PT (1) PT66685B (es)
SE (1) SE426231B (es)
YU (1) YU39805B (es)
ZA (1) ZA773397B (es)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4246249A (en) * 1979-05-24 1981-01-20 Aluminum Company Of America Silicon purification process
US4312847A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Silicon purification system
US4312848A (en) * 1979-05-24 1982-01-26 Aluminum Company Of America Boron removal in silicon purification
DE3332447A1 (de) * 1983-09-08 1985-03-21 Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen Verfahren zur befreiung von siliciumbruchstuecken von verunreinigungen
JPS6193614A (ja) * 1984-10-15 1986-05-12 Nec Corp 半導体単結晶基板
US4761202A (en) * 1986-05-30 1988-08-02 U.S. Philips Corporation Process for crystal growth of KTiOPO4 from solution
WO1990003952A1 (en) * 1988-10-07 1990-04-19 Crystal Systems, Inc. Method of growing silicon ingots using a rotating melt
JP3823160B2 (ja) * 1997-04-03 2006-09-20 野村マイクロ・サイエンス株式会社 半導体基板内部の洗浄方法
TWI429794B (zh) * 2006-04-04 2014-03-11 Silicor Materials Inc 矽之純化方法
WO2009012583A1 (en) * 2007-07-23 2009-01-29 6N Silicon Inc. Use of acid washing to provide purified silicon crystals
ES2530720T3 (es) * 2007-09-13 2015-03-04 Silicio Ferrosolar S L U Proceso para la producción de silicio de pureza media y elevada a partir de silicio de calidad metalúrgica
TWI443237B (zh) 2007-10-03 2014-07-01 Silicor Materials Inc 加工矽粉以獲得矽結晶之方法
JP4748187B2 (ja) * 2007-12-27 2011-08-17 国立大学法人東北大学 Ｓｉ結晶インゴットの製造方法
US9567691B2 (en) * 2008-06-20 2017-02-14 Varian Semiconductor Equipment Associates, Inc. Melt purification and delivery system
US8545624B2 (en) * 2008-06-20 2013-10-01 Varian Semiconductor Equipment Associates, Inc. Method for continuous formation of a purified sheet from a melt
US8329133B2 (en) * 2008-11-03 2012-12-11 Gt Crystal Systems, Llc Method and apparatus for refining metallurgical grade silicon to produce solar grade silicon
US8460629B2 (en) * 2008-12-01 2013-06-11 Inductotherm Corp. Purification of materials non-electrically conductive in the solid state and electrically conductive in the molten state with electric induction power
US8562932B2 (en) 2009-08-21 2013-10-22 Silicor Materials Inc. Method of purifying silicon utilizing cascading process
JP2013512188A (ja) * 2009-12-01 2013-04-11 ダウ コーニング コーポレーション 回転成型プロセス
EP4082966A1 (en) 2021-04-26 2022-11-02 Ferroglobe Innovation, S.L. Method for obtaining purified silicon metal

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1386227A (en) * 1919-09-26 1921-08-02 Electro Metallurg Co Process of refining crude electric-furnace silicon
US2087347A (en) * 1934-12-21 1937-07-20 United States Steel Corp Method of solidifying molten metals
US2402662A (en) * 1941-05-27 1946-06-25 Bell Telephone Labor Inc Light-sensitive electric device
US2872299A (en) * 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
FR1194484A (fr) * 1958-01-24 1959-11-10 Electro Chimie Soc D Procédé d'obtention de silicium pur par cristallisation fractionnée
DE1219903B (de) * 1964-04-16 1966-06-30 Bayer Ag Vorrichtung zur kontinuierlichen Trennung von Stoffgemischen durch fraktionierte Kristallisation
US3249425A (en) * 1964-08-17 1966-05-03 Joseph R Mares Process for freeze-refining a metal
US3543531A (en) * 1967-05-08 1970-12-01 Clyde C Adams Freeze refining apparatus
US3536123A (en) * 1968-05-14 1970-10-27 Izumi Automotive Ind Co Method of making internal combustion engine cylinder made of an aluminum alloy enriched with a wear-resistant component on the inside surface
US3871872A (en) * 1973-05-30 1975-03-18 Union Carbide Corp Method for promoting metallurgical reactions in molten metal

Also Published As

Publication number Publication date
PT66685B (en) 1978-11-17
CA1076461A (en) 1980-04-29
JPS5319922A (en) 1978-02-23
IT1079704B (it) 1985-05-13
FR2355776A1 (fr) 1978-01-20
FR2355776B1 (es) 1984-03-30
YU146877A (en) 1982-08-31
US4094731A (en) 1978-06-13
BR7703980A (pt) 1978-04-11
DE2728158A1 (de) 1977-12-29
SE7707100L (sv) 1977-12-22
SE426231B (sv) 1982-12-20
DE2728158C2 (es) 1987-07-16
NO151082C (no) 1985-02-13
CH621316A5 (es) 1981-01-30
NO151082B (no) 1984-10-29
ZA773397B (en) 1978-04-26
JPS6028761B2 (ja) 1985-07-06
YU39805B (en) 1985-04-30
NO772176L (no) 1977-12-22
PT66685A (en) 1977-07-01
GB1528897A (en) 1978-10-18

Similar Documents

Publication Publication Date Title
ES459971A1 (es) Un metodo para la produccion de silicio cristalino.
UA7080A1 (uk) Спосіб одержання кристалічного торасеміду
ATE4386T1 (de) Laktitol-monohydrat und verfahren zur herstellung von kristallinem laktitol.
EP0390672A3 (en) Method for heat process of silicon
JPS5580798A (en) Ribbon crystal growing method by lateral pulling
JPS5534115A (en) Crystallization method
RO89118A (ro) Procedeu de cristalizare a azotatului de calciu tetrahidrat
JPS6424098A (en) Heat treatment of compound semiconductor single crystal
ES8600405A1 (es) Procedimiento de producir dextrosa cristalizada monohidrato e instalacion correspondiente
JPS60191094A (ja) Ｂνルツボの前処理方法
JPS55109300A (en) Evaluation of insb single crystal
JPS5250164A (en) Process for production of semiconductor single crystal
JPS55167200A (en) Crystal growing method
JPS5413477A (en) Continuous growing apparatus for single crystal
ES2006991A6 (es) Procedimiento de cristalizacion por enfriamiento para fabricar azucar de calidad comercial.
JPS6433089A (en) Single crystal growing method for compound semiconductor
JPS61136987A (ja) 単結晶成長容器
JPS55113693A (en) Semiconductor single crystal producing device
JPS5722199A (en) Method for growing single crystal
JPS5519055A (en) Separation of micophenolic acid
JPS6461381A (en) Method for growing single crystal
JPS52149273A (en) Production of plate-shaped crystal
JPS5717496A (en) Liquid phase growing method for single crystal of compound semiconductor
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS54141388A (en) Production of compound semiconductor single crystal