ES449176A1 - Un dispositivo semiconductor perfeccionado. - Google Patents

Un dispositivo semiconductor perfeccionado.

Info

Publication number
ES449176A1
ES449176A1 ES449176A ES449176A ES449176A1 ES 449176 A1 ES449176 A1 ES 449176A1 ES 449176 A ES449176 A ES 449176A ES 449176 A ES449176 A ES 449176A ES 449176 A1 ES449176 A1 ES 449176A1
Authority
ES
Spain
Prior art keywords
carriers
storage location
layer
transistor
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES449176A
Other languages
English (en)
Spanish (es)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES449176A1 publication Critical patent/ES449176A1/es
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Semiconductor Memories (AREA)
ES449176A 1975-06-26 1976-06-23 Un dispositivo semiconductor perfeccionado. Expired ES449176A1 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB27093/75A GB1548877A (en) 1975-06-26 1975-06-26 Semiconductor devices
GB4889475 1975-11-27

Publications (1)

Publication Number Publication Date
ES449176A1 true ES449176A1 (es) 1977-12-01

Family

ID=26258625

Family Applications (1)

Application Number Title Priority Date Filing Date
ES449176A Expired ES449176A1 (es) 1975-06-26 1976-06-23 Un dispositivo semiconductor perfeccionado.

Country Status (12)

Country Link
US (1) US4074302A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JPS5217772A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
AU (1) AU504261B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1078516A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CH (1) CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2628532C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
ES (1) ES449176A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2334172B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1548877A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1063691B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7606746A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE410911B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5462462U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1977-10-11 1979-05-01
US4166223A (en) * 1978-02-06 1979-08-28 Westinghouse Electric Corp. Dual field effect transistor structure for compensating effects of threshold voltage
US4223329A (en) * 1978-06-30 1980-09-16 International Business Machines Corporation Bipolar dual-channel charge-coupled device
US4559638A (en) * 1978-10-23 1985-12-17 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4672645A (en) * 1978-10-23 1987-06-09 Westinghouse Electric Corp. Charge transfer device having an improved read-out portion
US4227201A (en) * 1979-01-22 1980-10-07 Hughes Aircraft Company CCD Readout structure for display applications
CA1164562A (en) * 1980-10-08 1984-03-27 Manabu Itsumi Semiconductor memory device
US4693561A (en) * 1985-12-23 1987-09-15 The United States Of America As Represented By The Secretary Of The Army Amorphous silicon spatial light modulator
JPH04133336A (ja) * 1990-09-25 1992-05-07 Mitsubishi Electric Corp 電荷転送装置
JPH04148536A (ja) * 1990-10-12 1992-05-21 Sony Corp 転送電荷増幅装置
JP3036175B2 (ja) * 1991-11-11 2000-04-24 日本電気株式会社 電荷転送装置
JP2780564B2 (ja) * 1992-05-20 1998-07-30 日本電気株式会社 電荷転送装置
US5331165A (en) * 1992-12-01 1994-07-19 Ball Corporation Split event reduced x-ray imager
US5436476A (en) * 1993-04-14 1995-07-25 Texas Instruments Incorporated CCD image sensor with active transistor pixel
JP2696057B2 (ja) * 1993-05-11 1998-01-14 ニチモウ株式会社 穀類を原料とした生成物の製造方法
US5369047A (en) * 1993-07-01 1994-11-29 Texas Instruments Incorporated Method of making a BCD low noise high sensitivity charge detection amplifier for high performance image sensors
US5357128A (en) * 1993-08-27 1994-10-18 Goldstar Electron Co., Ltd. Charge detecting device
JP3031815B2 (ja) * 1994-04-01 2000-04-10 シャープ株式会社 電荷検出素子及びその製造方法並びに電荷転送検出装置
EP0719456B1 (en) * 1994-06-23 1999-09-29 Koninklijke Philips Electronics N.V. Charge coupled device, and imaging device comprising such a charge coupled device
JP2816824B2 (ja) * 1995-09-11 1998-10-27 エルジイ・セミコン・カンパニイ・リミテッド Ｃｃｄ固体撮像素子
WO1997012402A1 (en) * 1995-09-29 1997-04-03 Analog Devices, Inc. Semiconductor charge potential wells with integrated diffusions
US5838034A (en) * 1996-12-10 1998-11-17 National Science Council Infrared optical bulk channel field effect transistor for greater effectiveness
DE19941148B4 (de) * 1999-08-30 2006-08-10 Infineon Technologies Ag Speicher mit Grabenkondensator und Auswahltransistor und Verfahren zu seiner Herstellung
DE60331060D1 (de) * 2003-09-02 2010-03-11 Univ Bruxelles Ein durch einen Strom aus Majoritätsträgern unterstützter Detektor für elektromagnetische Strahlung
US8906563B2 (en) 2011-11-04 2014-12-09 Fluidic, Inc. Internal convection cell
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
JP6544667B2 (ja) * 2015-10-02 2019-07-17 国立研究開発法人産業技術総合研究所 マルチプレクサ及びこれを用いた集積回路
BR112019000713B1 (pt) 2016-07-22 2023-04-25 Nantenergy, Inc Célula eletroquímica e método de conservar umidade dentro de uma célula eletroquímica
AU2017298995B2 (en) 2016-07-22 2019-08-29 Form Energy, Inc. Mist elimination system for electrochemical cells
MA53027A (fr) 2018-06-29 2021-05-05 Form Energy Inc Joint à membrane roulante
WO2020006419A1 (en) 2018-06-29 2020-01-02 Form Energy Inc. Metal air electrochemical cell architecture
CN109728020A (zh) * 2018-12-29 2019-05-07 中国电子科技集团公司第四十四研究所 一种三相驱动结构ccd的水平区结构及其驱动电路
EP3991234A4 (en) 2019-06-28 2024-01-17 Form Energy, Inc. DEVICE ARCHITECTURES FOR METAL-AIR BATTERIES
EP4147296A4 (en) 2020-05-06 2025-08-13 Form Energy Inc ELECTROCHEMICAL ENERGY STORAGE SYSTEM WITH DECOUPLED ELECTRODE
CN112420808A (zh) * 2020-11-10 2021-02-26 浙江大学杭州国际科创中心 石墨烯/硅基体沟道电子倍增电荷耦合器件及其读出方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3739240A (en) * 1971-04-06 1973-06-12 Bell Telephone Labor Inc Buried channel charge coupled devices
NL176406C (nl) * 1971-10-27 1985-04-01 Philips Nv Ladingsgekoppelde halfgeleiderinrichting met een halfgeleiderlichaam bevattende een aan een oppervlak grenzende halfgeleiderlaag en middelen om informatie in de vorm van pakketten meerderheidsladingsdragers in te voeren in de halfgeleiderlaag.
DE2316612A1 (de) * 1972-04-03 1973-10-18 Hitachi Ltd Ladungsuebertragungs-halbleitervorrichtungen
GB1457253A (en) * 1972-12-01 1976-12-01 Mullard Ltd Semiconductor charge transfer devices
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
JPS5028281A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1973-07-13 1975-03-22
US3987475A (en) * 1975-11-10 1976-10-19 Northern Electric Company Limited Nondestructive charge sensing in a charge coupled device

Also Published As

Publication number Publication date
JPS5711506B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-03-04
GB1548877A (en) 1979-07-18
FR2334172B1 (fr) 1984-03-23
NL7606746A (nl) 1976-12-28
DE2628532A1 (de) 1977-02-10
FR2334172A1 (fr) 1977-07-01
SE410911B (sv) 1979-11-12
JPS5217772A (en) 1977-02-09
IT1063691B (it) 1985-02-11
JPS56162870A (en) 1981-12-15
AU504261B2 (en) 1979-10-11
US4074302A (en) 1978-02-14
DE2628532C2 (de) 1985-03-07
CH613308A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1979-09-14
AU1511876A (en) 1978-01-05
CA1078516A (en) 1980-05-27
SE7607216L (sv) 1976-12-27

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